published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

Spintronics in metallic multilayers, composed of ferromagnetic (F) and non-magnetic (N) metals, grew out of two complementary discoveries. The first, Giant Magnetoresistance (GMR), refers to a change in multilayer resistance when the relative orientation of magnetic moments in adjacent F-layers is altered by an applied magnetic field. The second, Spin-Transfer-Torque (STT), involves a change in the relative orientation of F-layer moments by an electrical current. This novel physical phenomenon offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous potential in a broad range of technologies, including magnetic memory and recording. Because of its small size (<10nm), point contact is a very efficient probe of electrical transport properties in extremely small sample volumes yet inaccessible with other techniques. We have observed the point-contact excitations in magnetic multilayers at room temperature and extended the capabilities of our point-contact technique to include the sensitivity to wavelengths of the current-induced spin waves. Recently MacDonald and coworkers have predicted that similar to ferromagnetic multilayers, the magnetic state of an antiferromagnetic (AFM) system can affect its transport properties and result in antiferromagnetic analogue of giant magnetoresistance (GMR) = AGMR; while high enough electrical current density can affect the magnetic state of the system via spin-transfer-torque effect. We show that a high density dc current injected from a point contact into an exchange-biased spin valve (EBSV) can systematically change the exchange bias, increasing or decreasing it depending on the current direction. This is the first evidence for current-induced effects on magnetic moments in antiferromagnetic (FeMn or IrMn) metals. We searched for AGMR in multilayers containing different combinations of AFM=FeMn and F=CoFe layers. At low currents, no magnetoresistance (MR) was observed in any samples suggesting that no AGMR is present in these samples. In samples containing F-layers, high current densities sometimes produced a small positive MR – largest resistance at high fields. For a given contact resistance, this MR was usually larger for thicker F-layers, and for a given current, it was usually larger for larger contact resistances (smaller contacts). We tentatively attribute this positive MR to suppression at high currents of spin accumulation induced around and within the F-layers. / text

Fabrication of molecular spin devices with ferromagnetic electrodes coupled with a high spin molecule is an important challenge. This doctoral study concentrated on realizing a novel molecular spin device by the bridging of magnetic molecules between two ferromagnetic metal layers of a ferromagnetic-insulator-ferromagnetic tunnel junction on its exposed pattern edges. At the exposed sides, distance between the two metal electrodes is equal to the insulator film thickness; insulator film thickness can be precisely controlled to match the length of a target molecule. Photolithography and thin-film deposition were utilized to produce a series of tunnel junctions based on molecular electrodes of multilayer edge molecular electrodes (MEME) for the first time. In order to make a microscopic tunnel junction with low leakage current to observe the effect of ~10,000 molecules bridged on the exposed edge of a MEME tunnel barrier, growth conditions were optimized; stability of a ~2nm alumina insulator depended on its ability to withstand process-induced mechanical stresses. The conduction mechanism was primarily 1) tunneling from metal electrode to oranometalic core by tunneling through alkane tether that acts as a tunnel barrier 2) rapid electron transfer within the oranometalic Ni-CN-Fe cube and 3) tunneling through alkane tether to the other electrode. Well defined spin-states in the oranometalic Ni-CN-Fe cube would determine electron spin-conduction and possibly provide a mechanism for coupling. MEME with Co/NiFe/AlOx/NiFe configurations exhibited dramatic changes in the transport and magnetic properties after the bridging of oranometalic molecular clusters with S=6 spin state. The molecular cluster produced a strong antiferromagnetic coupling between two ferromagnetic electrodes to the extent, with a lower bound of 20 erg/cm,2 that properties of individual magnetic layers changed significantly at RT. Magnetization, ferromagnetic resonance and magnetic force microscopy studies were performed. Transport studies of this configuration of MEME exhibited molecule-induced current suppression by ~6 orders by blocking both molecular channels and tunneling between metal leads in the planar 25μm2 tunnel junction area. A variety of control experiments were performed to validate the current suppression observation, especially critical due to observed corrosion in electrochemical functionalization step. The spin devices were found to be sensitive to light radiation, temperature and magnetic fields. Along with the study of molecular spin devices, several interesting ideas such as ~9% energy efficient ultrathin TaOx based photocell, simplified version of MEME fabrication, and chemical switching were realized. This doctoral study heralds a novel molecular spin device fabrication scheme; these molecular electrodes allow the reliable study of molecular components in molecular transport.

Mesoscopic devices, such as nano-wires, are of interest for the next step in creating spintronic devices. With the ability to manipulate electrons and their spin, spintronic devices may be realised. To that end the different effects found in low-dimensional devices must be studied and understood. In this thesis  the influence that lateral spin-orbit coupling (LSOC) has on a nanowire, with asymmetrical confinement potential, is studied. The nanowire is studied through a numerical approach, using the Hartree-Fock method with Dirac interactions to solve the eigenvalue problem of an idealised infinite nanowire. The nanowire has a split-gate that generates the electrostatic asymmetrical confinement potential. It is found that the lateral spin-orbit coupling has little to no effect without any longitudinal effects in the wire, such as source-drain bias. The electrons will spontaneously create spin-rows in the device due to spin polarization. The spin polarization is triggered by using LSOC, numerical noise or from a weak magnetic field. / Mesoskopiska anordningar, som nano-trådar, tros vara ett viktigt steg för att skapa spinnelektronik. För att kunna skapa spinnelektronik behövs kunskap om hur elektroner kan manipuleras. Generellt måste därför existerande fenomen i nanoelektronik studeras. I denna avhandling studeras hur ''lateral spin-orbit koppling'' (LSOC) influerar en nanotråd som har en asymmetrisk potentialbarriär. Hartree-Fock metoden, med Dirac potential för elektron-elektron interaktioner, användes för att beräkna energinivåerna för en idealisk, oändligt lång nanotråd. Nanotråden har en split-gate som alstrar den elektrostatiska, asymmetriska potentialbarriären. "Lateral spin-orbit koppling" visar sig ha minimal effekt då longitudinella effekter, exempelvis spänning, saknas. Elektronerna placerar sig spontant i spinn-rader i tråden vid spontan spinn polarisation. Spinn polarisationen sätts igång av LSOC, numeriska störningar eller från svagt pålagt magnetfält.

Thermoelectricity can directly convert a temperature difference into a voltage or charge current. Recently, the development of spin caloritronics has introduced spin as another degree of freedom in traditional thermoelectrics. This discovery bodes a new generation of magnetic random access memories (MRAMs), where thermal spin-transfer torque (TSTT) rather than voltage driven spin-transfer torque (STT) is used to switch the magnetization in magnetic tunnel junctions (MTJs). To advance the rising trend of spin caloritronics, the coupling of charge, spin, and heat flow during electron transport in MTJs was systematically studied in this thesis. To begin with, the static transport properties of MTJs were studied by observing current dependent tunnel magnetic resistance (TMR). The observed decrease of TMR with a biased current is attributed to the change in spin polarization of the free ferromagnetic layer. A phenomenological model has been built based on the current dependent polarization, which agrees with our experimental results. Next, the Seebeck rectification effect in MTJs was studied. By applying microwave currents to MTJs, an intrinsic thermoelectric coupling effect in the linear response regime of MTJs was discovered. This intrinsic thermoelectric coupling contributes a nonlinear correction to Ohm's law. In addition, this effect can be controlled magnetically since the Seebeck coefficient is related to magnetization configuration. Finally, TSTT in MTJs was systematically studied. A laser heating technique was employed to apply a temperature difference across the tunnel barrier and ferromagnetic resonance (FMR) spectra were measured electrically through spin rectification. By analyzing the FMR spectra, TSTT in MTJs was observed and the angular dependence of TSTT was found to be different from dc-biased STT. By solving the Landau-Lifshitz-Gilbert equation including STT, the experimental observations were well explained. The discovery of Seebeck rectification refines the previous understanding of magneto-transport and microwave rectification in MTJs and provides a new possibility for utilizing spin caloritronics in high-frequency applications. The study of TSTT in MTJs shows clear experimental evidence of TSTT in MTJs. Further optimization of the design of MTJs may succeed in decreasing the necessary switching fields strength or even achieve a switching by only TSTT in MTJs. / February 2017

The ability to control the bi-stable magnetization states of shape anisotropic single domain nanomagnets has enormous potential for spawning non-volatile and energy-efficient computing and signal processing systems. One of the most energy efficient switching methods is to adopt a system of a 2-phase multiferroic nanomagnet, where a voltage applied on the piezoelectric layer generates a strain in it and the strain is elastically transferred to the magnetostrictive nanomagnet which rotates the magnetization states of the nanomagnet at room temperature via the converse magnet-electric effect. Recently, it has been demonstrated that the magnetization of a Co nanomagnet can be switched between two stable orientations by this technique. The switching probability, however, is low due to the relatively small magnetostriction of Co. One possible way to improve the statistics is to use a better magnetostrictive material like Galfenol which has much higher magnetostriction and is therefore desirable, but it also presents unique material challenges owing to the existence of many phases. Nonetheless, there is a need to step beyond elemental ferromagnets and examine compound or alloyed ferromagnets with much higher magnetostriction to advance this field. There has not been much work in nanoscale FeGa magnets which are important for nanomagnetic logic and memory applications. Here, we have experimentally demonstrated switching of magnetization of Galfenol nanomagnets and proposed a core component of ultra-energy-efficient memory cell. We also demonstrated a bit writing scheme which completely reverses the magnetization with only strain, thus overcoming the fundamental obstacle of strain induced switching of magnetizations of nanomagnets.

Topological insulators (TIs) are recently predicted, and much studied, new quantum materials. These materials are characterised by their unique surface electronic properties; namely, behaving as band insulators within their bulk, but with spin-momentum locked surface or edge states at their interface. These surface/edge crossing states are protected by the underlying time-reversal symmetry (TRS) of the bulk band structure, leading to a robust topological surface state (TSS) that is resistant to scattering from impurities which do not break TRS. Their surface band dispersion has a characteristic crossing at time reversal invariant momenta (TRIM) called a Dirac cone. It has been predicted that the introduction of a TRS breaking effect, through ferromagnetic order for instance, will open a band-gap in this Dirac cone. It can be seen that magnetic fields are not time reversal invariant by considering a solenoid. If time is reversed, the current will also reverse in the solenoid and so the magnetic field will also be reversed. So it can be seen that magnetic fields transform as odd under time reversal, the same will be true of internal magnetisation. By manipulating this gapped surface state a wide range of new physical phenomena are predicted, or in some cases, already experimentally observed. Of particular interest is the recently observed quantum anomalous Hall effect (QAHE) as well as, e.g., topological magneto-electric effect, surface Majorana Fermions and image magnetic monopoles. Building on these novel physical effects, it is hoped to open new pathways and device applications within the emerging fields of spintronics and quantum computation. This thesis presents an investigation of the nature of magnetic doping of the chalcogenide TIs Bi₂Se₃ and Bi₂Te₃ using 3d transition-metal dopants (Mn and Cr). Samples were grown by molecular beam epitaxy (MBE), an ideal growth method for the creation of high-quality thin film TI samples with very low defect densities. The grown films were investigated using a range of complementary lab-based and synchrotron-based techniques to fully resolve their physical structure, as well as their magnetic and electronic properties. The ultimate aim being to form a ferromagnetic ground state in the insulating material, which may be expanded into device applications. Samples of bulk Mn-doped Bi₂Te₃ are presented and it is shown that a ferromagnetic ground state is formed below a measured T_C of 9-13 K as determined by a range of experimental methodologies. These samples are found to have significant inhomogeneities within the crystal, a problem that is reduced in MBE-grown crystals. Mn-doped Bi₂Se₃ thin films were grown by MBE and their magnetic properties investigated by superconducting quantum interference device (SQUID) magnetometry and x-ray magnetic circular dichroism (XMCD). These reveal a saturation magnetisation of 5.1 &mu;_B/Mn and show the formation of short-range magnetic order at 2.5 K (from XMCD) with indication of a ferromagnetic ground state forming below 1.5 K. Thin films of Cr-doped Bi₂Se₃ were grown by MBE, driven by the recent observation of the QAHE in Cr-doped (Bi_1−xSb_x)₂Te₃. Investigation by SQUID shows a ferromagnetic ground state below 8.5 K with a saturation magnetisation of 2.1 &mu;_B/Cr. Polarised neutron reflectometry shows a uniform magnetisation profile with no indication of surface enhancement or of a magnetic dead layer. Further studies by extended x-ray absorption fine structure (EXAFS) and XMCD elucidate the electronic nature of the magnetic ground state of these materials. It is found that hybridisation between the Cr d and Se p orbitals leads to the Cr being divalent when doping on the Bi^3&plus; site. This covalent character to the electronic structure runs counter to the previously held belief that divalent Cr would originate from Cr clusters within the van der Waals gap of this material. The work overall demonstrates the formation of a ferromagnetic ground state for both Cr and Mn doped material. The transition temperature, below which ferromagnetic order is achieved, is currently too low for usable device applications. However, these materials provide a promising test bed for new physics and prototype devices.

Cette thèse s’inscrit dans le domaine de la spintronique moléculaire. Elle s’intéresse plus précisément aux nouvelles opportunités de façonnage de la polarisation de spin qui découlent de l'hybridation métal ferromagnétique/molécule à l'interface : le nouveau concept de « spinterface ».Dans une première partie nous présentons l’étude de nanojonctions tunnel magnétiques à base de monocouches auto-assemblées (SAMs). Ce système est un des plus prometteur dans l’optique de moduler les propriétés des dispositifs de spintronique par ingénierie chimique, tel un LEGO moléculaire. Nous y présentons la fonctionnalisation de la manganite demi-métallique (La,Sr)MnO3 (LSMO) avec des SAMs d’acides alkylphosphoniques et la fabrication de nanojonctions LSMO/SAMs/Co avec une surface de quelque 10 nm2. Une magnétorésistance de 30% à 50% est observée dans la majorité des dispositifs avec une magnétorésistance tunnel (TMR) jusqu'à 250 % à basse température. Un point remarquable est aussi le comportement très robuste du signal avec la tension: environ 20% de TMR est encore observée au-dessus d’une tension de 1 V. L'influence de la longueur de la chaîne moléculaire a été aussi étudiée et représente un premier pas vers la modulation des dispositifs au niveau moléculaire. Dans une deuxième partie nous présentons l’étude des dispositifs organiques à base de métaux ferromagnétiques à haute TC (température de Curie) et semi-conducteurs organiques. Nous avons réalisé des vannes de spin de Co/Alq3/Co avec des sections de 50 ou 100 µm et fabriquées in-situ par « shadow mask ». Des mesures à température ambiante ont permis d’observer -4% de magnétorésistance (MR) dans une vanne de spin Co/Alq3/Co et +8% MR dans une vanne de spin de Co/MgO/Alq3/Co. Le rôle des deux interfaces sur les propriétés de polarisation de spin des dispositifs est aussi étudié et détaillé. Une forte hybridation métal/molécule dépendant du spin à l'interface inferieure de Co/Alq3, présentant un effet de spinterface (inversion de la polarisation en spin), est observée. Ces études montrent que les effets de spinterface, comme l’inversion de la polarisation de spin, peuvent persister dans un dispositif jusqu’à température ambiante. / This thesis targets the field of molecular spintronics and more particularly the new spin polarization tailoring opportunities, unachievable with inorganic materials, which arise from the ferromagnetic metal/molecule hybridization at the interface.: the new concept of Spinterface.In a first part we investigate Self-Assembled Monolayers (SAMs) based magnetic tunnel nanojunctions. This system appears to be a highly promising candidate to engineer the properties of spintronics devices at the molecular level since SAMs are the equivalent of a molecular LEGO building unit. We present the functionalization of the half-metallic manganite (La,Sr)MnO3 (LSMO) with alkyl phosphonic acids SAMs and the fabrication of LSMO/SAMs/Co magnetic tunnel nanojunctions with an area of few 10 nm2. MR of 30% to 50% is observed in most of the devices, while we report even up to 250% tunnel magnetoresistance (TMR) at low temperature. The most striking point is the robustness of the signal with bias voltage with still 20% TMR observed in the volt range. The influence of the molecular chain length is also investigated and represents a first step towards achieving molecular tailoring.In a second part we develop organic spintronics devices relying on high Curie temperature metallic ferromagnetic electrodes and standard organic semiconductor such as Co/Alq3/Co organic spin valves (OSVs). Junctions have a large area (section of 50 or 100 µm) and are fabricated in-situ by shadow mask. Magnetoresistance (MR) effects at room temperature are investigated with -4% MR observed in Co/Alq3/Co OSVs and +8% MR in Co/MgO/Alq3/Co OSVs. The role of the two interfaces on the spin polarization properties of the devices is also investigated. A stronger spin-dependent hybridization is found to occur at the bottom Co/Alq3 interface inverting the spin polarization on the first molecular layer. The observation of spin polarization inversion at room temperature demonstrates that spinterface effects can strive up to room temperature.

Un nouveau matériau spintronique, Mn4N, a été étudié. Les couches minces ferrimagnétiques Mn4N possèdent une aimantation spontanée Ms relativement petite et une forte anisotropie magnétique perpendiculaire (PMA) et conviennent donc aux dispositifs à mémoire à couple de rotation. De plus, Mn4N est composé uniquement d’éléments bon marché, légers et abondants, sans terres rares ni métaux nobles, et donc exempt de criticité matérielle. Dans ce travail, les propriétés magnétiques et de magnéto-transport de Mn4N développé sur un substrat de SrTiO3 (STO) ont été évaluées.Tout d'abord, les propriétés magnétiques et magnéto-transport des films minces de Mn4N sont évaluées, ce qui permet de constater leur amélioration spectaculaire en remplaçant les substrats classiques en MgO par des substrats en STO. Ce système Mn4N / STO présente des propriétés étonnantes: une structure de domaine de taille millimétrique, une aimantation totalement rémanente à champ nul et une commutation d’aimantation nette provoquée par une faible nucléation de domaine inversé et une propagation en douceur de DW. Ces propriétés, associées à un très petit Ms et à un grand PMA, soulignent son potentiel pour les applications spintroniques.Deuxièmement, l’efficacité de génération du couple de transfert de spin (STT) dans le film mince Mn4N a été mesurée en mesurant la vitesse de la paroi de domaine (DW) entraînée par des impulsions de courant. La vitesse DW atteint des valeurs record de 900 m / s pour une densité de courant de 1,3 × 10 12 A / m2. Cette valeur est la plus élevée de tous les systèmes pilotés par le STT et est comparable à la vitesse la plus élevée obtenue avec les SOT. La mobilité DW η est également très grande, la plus élevée de tous les systèmes basés sur STT. L'ajustement de nos données à l'aide d'un modèle analytique 1D permet d'extraire une polarisation de spin des électrons de conduction de 0,81, ce qui suggère que Mn4N pourrait convenir à l'obtention de grandes magnétorésistances. De plus, ces propriétés étonnantes ont été obtenues sans aucun élément de terre rare, aucune structure d’empilement, ni assistance extérieure telle que des champs magnétiques / électriques ou des contraintes mécaniques.Enfin, les propriétés magnétiques ont été ajustées par une petite quantité d'introduction de Ni dans Mn4N. L'aimantation spontanée de Mn4N sur STO a été réduite par l'introduction de Ni avec maintien d'un PMA fort et rémanence totale. Ce résultat indique que le système ferrimagnétique Mn4N pourrait être compensé en substituant des atomes de Ni. Récemment, la compensation du ferrimagnet a été activement étudiée car le ferrimagnet compensé fournit une efficacité infinie en spin-couple. Les trois évidences de la compensation ont également été démontrées, l'inversion de l'angle de Hall anormal, la chiralité de rotation de Kerr et la dépendance de l'aimantation en fonction de la température. Le point de compensation de la composition a été estimé autour de Mn3.82Ni0.18N. Nous avons suggéré le modèle de compensation de Mn4N par l'introduction de Ni, qui est compatible avec la réduction par MS, l'inversion des courbes AHE, Kerr et M-T.En résumé, un potentiel de films Mn4N et Mn4-xNixN a été démontré comme un candidat prometteur pour les applications spintroniques telles que les dispositifs de mouvement DW induits par le courant avec de grandes propriétés: nucléation de domaine et propagation DW lisse, efficacité de génération de STT ultra-haute et accordabilité de la magnétisation par Ni-introduction. Ces propriétés étonnantes ont été réalisées sans terres rares ni métaux nobles, ce qui peut constituer une étape importante dans le remplacement des matériaux à base de terres rares par des éléments abondants. / A new spintronic material Mn4N has been investigated. Ferrimagnetic Mn4N thin films possess relatively small spontaneous magnetization Ms and strong perpendicular magnetic anisotropy (PMA) and thus are suitable for spin-torque based memory devises. In addition, Mn4N is composed of only cheap, light and abundant elements without any rare-earth nor noble metals., thus free from material criticality. In this work, magnetic and magneto-transport properties of Mn4N grown on SrTiO3 (STO) substrate have been evaluated.First, the magnetic and magneto-transport properties of Mn4N thin films are evaluated, resulting in finding out dramatically improvement of them by replacing conventional MgO substrates by STO substrates. This Mn4N/STO system exhibits astonishing properties: a millimeter-sized domain structure, fully remnant magnetization at zero field and a sharp magnetization switching caused by scarce nucleation of reversed domain and smooth DW propagation. These properties, associated to a very small Ms and a large PMA, underline its potential for spintronic applications.Second, the generation efficiency of spin-transfer torque (STT) in Mn4N thin film has been measured by measuring the speed of domain wall (DW) driven by current pulses. The DW velocity reaches record values of 900 m/s for a current density of 1.3×10^12 A/m2. This value is the highest in all STT-driven systems and is comparable to the highest speed obtained using SOTs. The DW mobility η is also very large, the highest in all STT-based systems too. Fit of our data using a 1D analytical model allows extracting a spin polarization of the conduction electrons of 0.81, suggesting that Mn4N could be suitable to obtain large magnetoresistances. In addition, these amazing properties have been achieved without any rare earth elements, stack structures, nor external assistance such as magnetic/electric field or mechanical stress.At last, the magnetic properties have been tuned by a small amount of Ni-introduction to Mn4N. The spontaneous magnetization of Mn4N on STO has been reduced by Ni-introduction with keeping strong PMA and full remanence. This result indicates the ferrimagnetic Mn4N system might be compensated by substituting Ni atoms. Recently compensation of ferrimagnet has been actively studied because the compensated ferrimagnet provides infinite spin-torque efficiency. The three evidences of the compensation have also been demonstrated, the reversal of anomalous Hall angle, Kerr rotation chirality, and the temperature dependence of magnetization. The compensation point of composition has been estimated around Mn3.82Ni0.18N. We suggested the compensation model of Mn4N by Ni introduction which is consistent with the MS reduction, the reversal of AHE, Kerr and M-T curves.In summary, a potential of Mn4N and Mn4-xNixN films has been demonstrated as a promising candidate for spintronic applications such as current induced DW motion devices with great properties: scares domain nucleation and smooth DW propagation, ultrahigh STT generation efficiency, and tunability of magnetization by Ni-introduction. These amazing properties have been achieved without rare-earth nor noble metal, which can be a milestone for replacement of rare-earth-based materials by abundant elements.

Neste trabalho e apresentado um estudo, via teoria de massa efetiva multibanda autoconsistente de heteroestruturas de semicondutores magnéticos diluídos, generalizada para incluir parâmetros de diferentes materiais. A interacao magnética e descrita por um modelo de campo médio baseado no mecanismo de troca indireta, com a possibilidade de inclusão de diferentes íons magnéticos. As equacoes de massa efetiva são resolvidas de forma autoconsistente com o auxílio da equacao de Poisson. As interacoes de spin-órbita e de troca-correlacao, na aproximacao de densidade local, são incluídas no cálculo. O método e aplicado para o estudo das estruturas de bandas e densidades de carga com separacao por spin do portador de heteroestruturas com dopagem tipo-n e tipo-p, variando a geometria dos pocos magnéticos e também o período da super-rede, as densidades de portadores e as concentracoes de íons magnéticos. Solucoes autoconsistentes da equacao de massa efetiva são encontradas para o oxido semicondutor (Zn,Co)O. Será mostrada a separacao de portadores por spin em funcao dos parâmetros variados, simulando diversas concentracoes possíveis, utilizadas em sistemas descritos na literatura, e será analisado o comportamento dos perfis de potencial. Usando os dados obtidos, um diagrama de fases será traçado com base na polarizacao total ou parcial dos portadores, e o seu comportamento será discutido. Também serão mostradas as estruturas de bandas, os perfis de potencial e as distribuicoes de carga do semicondutor (GaMn)As, variando as densidades de portadores e a direcao do campo magnético intrínseco, gerado pela dopagem com íons magnéticos. Os resultados obtidos neste trabalho podem servir de guia para futuras experiências e para o desenvolvimento de dispositivos com semicondutores magnéticos diluídos baseados em (Zn,Co)O e (Ga,Mn)As. Os métodos aqui descritos são gerais e podem ser utilizados para outros materiais. / This work presents a self-consistent multiband effective mass theory applied to diluted magnetic semiconductor heterostructures, generalized to include parameters of different ma- terials. The magnetic interaction is described by a mean-field approximation based on indirect- exchange mecanism, with the possibility of inclusion of different magnetic ions. The effective mass equations are solved self-consistently with the help of the Poisson equation. Spin-orbit and exchange-correlation interactions are included in the simulation in the local density appro- ximation. The method is used to study band structures and charge densities separated by spin in n- and p-type heterostructures. The magnetic well\'s geometry, the superlattice period, the carrier density and the magnetic ion concentration are changed. Self-consistent solutions of the effective mass equation are found for the semiconductor oxide (Zn,Co)O. Charge separation by spin will be show in function of the variation of the simulation parameters, simulating several ion concentrations and charge densities used in systems described in literature, and the potenti- als profiles will be analised. Using the data obtained a phase diagram will be plotted, based on the carrier total or partial carrier polarization, and a model for the behavior of the phase diagram will be discussed. It will also be shown band structures, potential profiles and charge densities of the (Ga,Mn)As semiconductor, varying it carrier density and the direction of the intrinsic magnetic field, generated by the magnetic ions that doped the heterostructure. The results ob- tained in this work can be used as a guide in future experiences and development of devices with diluted magnetic semiconductors based on (Zn,Co)O and (Ga,Mn)As. The methods here described are general and can be used for other materials.