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The proposed tension measurement method focuses on measurement of tension in a single belt span of the multi-pulley Front End Accessory Drive (FEAD) system. The mean belt span tension is calculated from the measured belt span natural vibration frequency. The oscillation belt span tension is calculated from the measured belt span transverse displacement. The dynamic belt span tension is calculated using the mean and oscillation tensions, belt span support pulley rotations, and belt slip, where the slip equation is based on Euler's equation. The proposed tension measurement method is validated using an experimental testing FEAD system which consists of a five pulley system and an automatic tensioner arm. Non-contact sensors are used to prevent disruption of the typical system behaviour. Testing conditions simulate typical engine crankshaft rotation input. Results from experimental testing consistently produce results with percent error less than 10 % for mean and maximum belt span dynamic tension.

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A dissertation submitted in partial compliance with the requirements for the Master's Degree in Technology: Chiropractic, Durban Institute of Technology, 2002. / Headaches have been described as the most common medical complaint in society (Dalessia 1987:3), and Tension-type headaches constitute approximately 80% of these (Martin 1993:22). Although Episodic tension-type headache is more prevalent than Chronic tension-type headache and may have a greater societal impact, Chronic tension-type headache has by far a greater individual impact (Schwartz et aI, 1998) on the patient. The exact causes of Chronic tension-type headaches are not known and, as a result, treatment is commonly symptomatic in nature and aimed at reducing pain. To date, treatment commonly involves the use of drugs and with it comes the threat of drug-induced side-effects (Bendtsen et aI, 1996). The purpose of this study was to investigate two non-pharmacological treatments in the management of Chronic tension-type headaches, namely the relative effectiveness of Spinal Manipulative Therapy (SMT) in conjunction with Trans-cutaneous Electrical Nerve Stimulation (TENS), as compared with SMT and placebo TENS. ABSTRACT It was hypothesized that SMT in conjunction with TENS would provide a greater immediate and short-term benefit in comparison to SMT and placebo TENS in the treatment of mild / M

Pendant le développement d’un embryon, le remodelage des tissus amène un changement de forme: les tissu peuvent s’allonger, s’envaginer, s’étirer etc. Différentes voies de signalisation règlent ces comportements dans le temps et l’espace à travers le contrôle du cytosquelette d’actine et des tensions produites par ce dernier en interaction avec le moteur moléculaire Myosine-II.Quelle est la distribution des forces subcellulaires qui contrôlent la morphogenèse des tissus? Quelle est la nature des forces engendrée set pour finir, quelle est l’origine de ces forces? Voici les questions pour lesquelles ma thèse cherche des réponses. J’utilise l’élongation de la bande germinale de l’embryon de Drosophile comme système modèle afin d’investiguer la mécanique de la morphogenèse des tissus / During embryonic development tissue remodeling leads to shape changes: for example, tissues can elongate, invaginate, and stretch. Distinct signaling pathways regulate in space and time these behaviors through the control ofthe actin cytoskeleton and of myosin-based tension required for cell shapechange. What is the spatiotemporal pattern of subcellular forcesthat orient tissue morphogenesis? What is the nature of the generated forces and finally, what lies at the origin of such forces? These are the main questions that my thesis tries to illuminate. I use the germbandelongation of the Drosophila embryo as a model system to investigate themechanics of tissue morphogenesis

Pour les applications électroniques analogiques, des composants fonctionnant en hautes fréquences avec un faible niveau de bruit sont nécessaires. Pour le développement de circuits numériques hauts débits de type DCFL, il faut utiliser des transistors à effet de champ à tensions de seuil positives. De plus, la tenue en tension est aussi une contrainte. La structure HEMT métamorphique à enrichissement AlInAs/GaInAs sur GaAs développée par la société OMMIC en 2007 répond à ces exigences et constitue le point de départ de cette étude. Le but de cette thèse est en effet de fournir une structure de HEMTs à enrichissement (E-HEMTs) de la filière AlInAs/InGaAs pour applications faible bruit sur substrat InP, afin de tirer profit de sa forte mobilité électronique, tout en maintenant de bonnes caractéristiques statiques et dynamiques. Notre travail d’optimisation, de réalisation et de caractérisation de structures permet d’atteindre des fréquences de coupure FT, FMAX de respectivement 204 GHz et 327 GHz, pour un NFmin de 0.96 dB et un gain associé de 13.2 dB à 30 GHz, pour des structures présentant d’excellentes performances statiques : tension de seuil positive de 30 mV, tension de claquage grille - drain de –7 V, transconductance de 1040 mS/mm. Ces résultats placent ce HEMT sur InP à l’état de l’art des transistors HEMTs à enrichissement, et en font un concurrent des transistors HEMTs à déplétion pour les applications faible bruit. / The increasing needs of high frequency electronic systems combined with constant efforts in miniaturization require low noise and high frequency Field Effect Transistor with high operation voltage. For digital applications, enhancement mode HEMT is needed. The enhancement-mode metamorphic AlInAs/GaInAs HEMT on GaAs substrate developed in OMMIC in 2007 meet these requirements and it represents the starting point of our study. The aim of our work is to provide AlInAs/InGaAs E-HEMTs for low noise applications, on InP substrate in order to take advantage of its high electronic mobility, while maintaining high static and dynamic performances. We first optimized the structure, then we realized and characterized E-HEMTs which reach high cutoff frequencies, such as 204 GHz for FT and 327 GHz for FMAX, combined with a low noise figure of 0.96 dB and an associated gain of 13.2 dB at 30 GHz. These structures also show high static performances such as a 30 mV threshold voltage, a gate-to-drain breakdown voltage of –7 V, and a high transconductance of 1040 mS/mm. These results make this pseudomorphic E-HEMT on InP substrate at the state of the art of the enhancement mode HEMTs, and it even competes with the best low noise applications depletion mode HEMTs.

The mechanical engineering department at the University of Idaho is conducting a project with the purpose of developing a complete system for investigating creep-, creep-fatigue- and fatigue properties of metallic materials at elevated temperatures up to 650 ˚C with Compact Tension (CT) specimens. Considerable efforts have been made to study and understand these phenomena, although numerous problems still exist. It is important to explore more extensively the complicated phenomena of creep, fatigue and of creep-fatigue interactions. The Direct Current Potential Drop (DCPD) method is a common method used to investigate, for example, the initiation of cracks, crack growth rates and to monitor crack growth. The technique utilizes the fact that the electrical resistance of a CT specimen changes with crack growth. By applying a constant current over the specimen and measuring the resulting voltage over the crack, the crack length can be related to the voltage, and the difference in crack length with difference in voltage. Standards from the American Society for Testing of Materials (ASTM) were used as guidance when designing the DCPD system and CT specimen. The development and implementation processes were divided into an analytical and an experimental stage. The final product consisted of a high temperature extensometer, to measure crack mouth opening displacement (CMOD), and a DCPD system, to measure crack growth, controlled by separate control units. The DCPD system consisted of a DC supply and a nano voltmeter along with Constantan wire and NiCr60 wire respectively, that were mechanically fastened. The DCPD system delivered overall satisfying results and was able to generate sufficient data to produce a crack growth curve, da/dN vs. ΔK. Although, by taking advantage of resistance welding equipment to attach the DCPD wires, along with implementing one shared control unit for the DCPD system and the extensometer, more accurate and accessible measurements and correlations could be extracted. / Mechanical engineering avdelningen på University of Idaho genomför just nu ett utvecklingsprojekt med syftet att utveckla ett komplett system för undersökning av krypnings, krypnings-utmattnings- samt utmattnings- egenskaper av metalliska material vid höga temperaturer upp till 650 ˚C med hjälp av kompakta spänningsprovstavar (CT specimens). Betydande ansträngningar har gjorts för att undersöka och förstå dessa fenomen, men flera problem kvarstår. Det är viktigt att djupare undersöka kopplingen mellan krypnings- och utmattningsegenskaper. Direct Current Potential Drop (DCPD) metoden är en vanlig metod vilken används för att undersöka, exempelvis, sprickinitiering, spricktillväxthastigheter och spricktillväxt. Tekniken utnyttjar faktumet att den elektriska resistansen i en provstav ändras med spricktillväxt. Genom att föra en konstant ström genom provstaven och sedan mäta den resulterande spänningen över sprickan, kan spricklängden relateras till uppmätt spänning. På samma sätt kan spricktillväxt relateras till spänningsförändringar. Standarder från American Society for Testing of Materials (ASTM) användes för att designa ett DCPD system samt en CT provstav. Utvecklings- och implementeringsprocessen var uppdelad i en analytisk och en experimentell del. Den slutgiltiga produkten bestod av en extensometer, för mätning av spricköppning vid höga temperaturer, och ett DCPD system, för mätning av spricktillväxt vid höga temperaturer, vilka kontrollerades av separata kontrollenheter. DCPD systemet bestod av en strömkälla och en nanovoltmeter tillsammans med Constantan kablar respektive NiCr60 kablar, vilka fastsättes mekaniskt. DCPD systemet levererade generellt sett tillfredställande resultat och hade kapacitet att generera tillräckligt precisa data för att producera en spricktillväxtkurva, da/dN vs. ΔK. Däremot, genom att utnyttja en resistanssvets, för att fastsätta DCPD-kablarna, tillsammans med en gemensam kontrollenhet för extensometern och DCPD systemet, kan det tänkas att bättre och mer tillgängliga resultat kunde åstadkommas.