Aktivitetskort som pedagoger kan använda med barn i åldrarna 5-6 år påStenby 4H-gård i Eskilstuna har tillverkats. Syftet var att försöka ge barnen positiv känsla för djur, natur och teknik. Genom konkreta upplevelserav djur och utevistelse var förhoppningen att barnen skulle få en ökadförståelse för djur och natur. Aktivitetskorten innehåller fakta, bilder,sånger, ramsor och lekar för att ge variation till barnen. Pedagogen lederbarnen genom aktiviteterna med frågor och barnen ska ha möjlighet attta upp egna tankar. Aktiviteterna provades av pedagoger och barn frånStenby förskola. Både pedagoger och barn förstod innehåll och barnenhade många egna frågor. Synpunkter på aktivitetskorten från en pedagogsamt från djuransvarig på Stenby 4H-gård medförde en revision avaktiviteterna. Att mäta resultatet av aktiviteterna efter endast ett besökvar svårt. Det krävs återkommande besök och uppföljning under enlängre tid.

Silicon carbide is known for its potential in high power, high radiation and high temperature applications. It is also one of the first materials observed with phenomenon of electroluminescence. Depending on the mechanism of recombination, carriers inside silicon carbide recombine and release photons at different wavelengths. As one of the third-generation semiconductors, many studies focus on the effects of defects on silicon carbide device stability and performance. Especially for defects like stacking faults, which can be generated either during fabrication or induced by current under forward bias, can cause severe device degradation and limits the use of silicon carbide. By testing electroluminescence of silicon carbide, one can analyses the recombination event and identify the defects that trapped carriers, as each recombination mechanism would be shown as a unique emission peak on the sample EL spectra. In addition to the as-grown and recombination-induced defects, the changes of spectrum due to stress and chemical etching indicate the influence of external factors to the defects that are either existed prior to the external forces or that were induced during the testing. Such analysis could be helpful to understand the defect generation mechanism, reduce the density of the defects and to create innovative ideas for future applications. A general introduction to silicon carbide will be given in Chapter 1 with some detailed description of silicon carbide defect generation and characterization mechanisms in Chapter 2. In Chapters 3 and 4, the focus is to analyse the external effects to the spectrum of 4H silicon carbide, like chemical etching and mechanical stress. Before giving the conclusion in Chapter 6, Chapter 5 will be focusing on analysing the effect of external forces on the silicon carbide with stacking faults existed prior to the testing. / Thesis / Master of Applied Science (MASc)

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SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (< 1015 cm-2) are consistent with the SRIM-2011 simulations. From RBS-C Si sub-lattice measurements for different fluences (1.1×1014 cm-2 to 3.2×1014 cm-2) of Si implantation in 4H-SiC, the Si vacancy density is estimated to range from 1.29×1022 cm-3 to 4.57×1022 cm-2, corresponding to average vacancy distances of 4.26 Å to 2.79 Å at the damage peak (50±5 nm). Similarly, for C implanted fluences (1.85×1014 cm-2 to 1×1015 cm-2), the Si vacancy density varies from 1.37×1022 cm-3 to 4.22×1022 cm-3 with the average vacancy distances from 4.17 Å to 2.87 Å at the damage peak (110±10 nm). From the Raman spectroscopy, the implantation-induced lattice disorders calculated along the c-axis (LO mode) and perpendicular to c-axis (TO mode) in 4H-SiC are found to be similar. Furthermore, the results obtained from SQUID measurements in C implanted n-type 4H-SiC sample with fluences ranging from 1×1012 to 1.7×1016 ions/cm2 have been discussed. The implanted samples showed diamagnetism similar to the unimplanted sample. To date, to our best of knowledge, no experimental work has been reported on investigating defect induced magnetism for self-ion implantation in n-type 4H-SiC. These first reports of experimental results can provide useful information in future studies for a better understanding of self-ion implantation in SiC-based DMS.

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Submitted by Mayara de Souza Siqueira null (maricota.siqueira@hotmail.com) on 2017-05-15T22:39:40Z No. of bitstreams: 1 Dissertação - Mayara .pdf: 4267966 bytes, checksum: c9c56ca420c6aa8059d2932c68048368 (MD5) / Approved for entry into archive by Luiz Galeffi (luizgaleffi@gmail.com) on 2017-05-16T14:52:27Z (GMT) No. of bitstreams: 1 siqueira_ms_me_bauru.pdf: 4267966 bytes, checksum: c9c56ca420c6aa8059d2932c68048368 (MD5) / Made available in DSpace on 2017-05-16T14:52:27Z (GMT). No. of bitstreams: 1 siqueira_ms_me_bauru.pdf: 4267966 bytes, checksum: c9c56ca420c6aa8059d2932c68048368 (MD5) Previous issue date: 2017-03-24 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Compostos heterocíclicos constituem a maior e mais variada família de compostos orgânicos. Dentre esses compostos temos os derivados de 4H-piranos e 1,4-di-hidropiridinas (1,4-DHPs), que são importantes classes de moléculas bioativas. O interesse em sua química se dá por conta dos inúmeros efeitos biológicos e farmacêuticos que estes derivados apresentam, assim como sua utilização como intermediários reacionais nas sínteses de inúmeros produtos naturais. Existem diversas metodologias para a síntese de derivados dessas moléculas. O objetivo deste trabalho foi investigar a utilização do NbCl5 como ácido de Lewis na síntese de derivados de 4H-piranos e 1,4-di-hidropiridinas através de reações multicomponentes, via metodologia de Hantzsch. Reações entre acetoacetato de metila e diferentes aldeídos aromáticos foram realizados na presença de NbCl5. As reações mostraram que o NbCl5 é um bom ácido de Lewis para a síntese de derivados de 4H-piranos, em uma única etapa e com rendimentos satisfatórios (77 a 91%). Foi realizado um estudo detalhado verificando o efeito do solvente, da concentração molar de NbCl5 e o efeito dos substituintes presentes nos aldeídos aromáticos nessas reações, com relação ao tempo reacional e rendimento das reações. Observamos que quando as reações foram realizadas em EtOH e MeOH como solventes, não ocorre a formação dos derivados de 4H-piranos. Também foi observado que não houve diferença nos rendimentos e tempos reacionais quando utilizado diferentes substituintes presentes nos aldeídos aromáticos. Foi realizado um estudo detalhado sobre a otimização das reações entre formaldeído, acetato de amônio e acetato de etila na presença de NbCl5 para a síntese de derivados de 1,4-di-hidropiridinas verificando o efeito da concentração molar de NbCl5 e o efeito dos solventes nessas reações. / Heterocyclic compounds constitute the largest and most varied family of organic compounds. Among these compounds are derivatives of 4H-pyrans and 1,4-dihydropyridines (1,4-DHPs), which are an important class of bioactive molecules and interest in their chemical occurs due to the numerous biological and pharmaceutical effects, as well as their use as intermediates in the total syntheses of many natural products. There are various methodologies for the synthesis of derivatives of these molecules. The objective of this work was to investigate the use of NbCl5 as Lewis acid in the synthesis of derivatives of 4H-pyrans and 1,4-dihydropyridines through multicomponent reactions, using Hantzsch's methodology. Reactions between methyl acetoacetate and different aromatic aldehydes were performed in the presence of NbCl5. The reactions showed that NbCl5 is a good Lewis acid for the synthesis of 4H-pyran derivatives in a single step and in satisfactory yields (77 to 91%). A detailed study was carried out verifying the solvent effect, the molar concentration of NbCl5 and the effect of the substituents present on the aromatic aldehydes in these reactions, with respect to the reaction time and yield of the reactions. We note that when the reactions were carried out in EtOH and MeOH as solvents, the formation of 4H-pyran derivatives does not occur. It was also observed that there was no difference in yields and reaction times when different substituents were used in the aromatic aldehydes. A detailed study was carried out on the optimization of reactions between formaldehyde, ammonium acetate and ethyl acetate in the presence of NbCl5 for the synthesis of 1,4-dihydropyridines derivatives by verifying the effect of the molar concentration of NbCl5 and the effect of solvents In these reactions.

Silicon Carbide is a wide bandgap semiconductor with excellent physical and opto-electrical properties. Among these excellent properties are its radiation hardness, high temperature operation and high electric field breakdown. SiC can therefore be used in the fabrication of electronic devices capable of operating in harsh environments, e.g. radiation detectors. Like any other semiconductor, the success of SiC in device fabrication depends on elimination of defects that are detrimental to desired devices or controlled introduction of desired energy levels. The first step in so doing is understanding the defects that are either found in as grown material, introduced during device fabrication or introduced during device operation. In this study nickel ohmic and Schottky contacts were resistively fabricated on n-type 4H-SiC with a net doping density of 4 × 1014 cm-3. Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and Laplace-DLTS measurement techniques were used to electrically characterize the fabricated Schottky diodes. The diodes were then irradiated with low energy electrons, alpha particles and protons. The characterization measurements were repeated after irradiation to evaluate the effect of irradiation on the electrical properties of SiC. It was observed from I-V measurements that electron, alpha particle and proton irradiations do not significantly affect the rectification of Ni/SiC Schottky contacts. C-V measurements indicated that the free carrier removal rate is higher for alpha particle irradiation as compared to electron irradiation. The irradiated diodes were annealed in argon ambient and significant recovery in the free carrier concentration was observed below 600 °C. The free carrier concentration of proton irradiated Schottky contacts, which was decreased to below detection levels was also partly recovered after heat treatment of up to 400 °C. DLTS and Laplace-DLTS measurements revealed the presence of four defect levels in as-grown 4H-SiC. These defects have been labelled E0.10, E0.12, E0.17 and E0.69 where the subscripts indicate the activation energies of the respective defects. Electron, alpha particle and proton irradiations were observed to induce three more defect levels with activation energies of 0.42 eV, 0.62 eV and 0.76 eV. Additionally, these irradiations were also observed to enhance the concentration of level E0.69. All the radiation induced defects were annealed out at temperatures below 600 °C. In proton irradiated diodes, another defect with activation energy of 0.31 eV was observed after annealing the irradiated diodes at 625 °C. / Dissertation (MSc)--University of Pretoria, 2014. / lk2014 / Physics / MSc / Unrestricted

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New halo-carbon precursor, CH3Cl, is used in this work to replace the traditional C3H8 gas as a carbon precursor for the homoepitaxial growth of 4H-SiC. The traditional SiH4-C3H8-H2 systems require high growth temperatures to enable the desirable steplow growth for high-quality epilayers. A well known problem of the regular-temperature growth is the homogeneous gas-phase nucleation caused by SiH4 decomposition. However, the degree of Si cluster formation in the gas phase and its influence on our low-temperature epitaxial growth was unknown prior to this work. Growth at temperatures below 1400°C was demonstrated previously only for a limited range of substrate surface orientations and with poor quality. Mirror-like epilayer surface without foreign polytype inclusions and with rare surface defects was demonstrated at temperatures down to 1280-1300°C for our halo-carbon growth. Quantitatively different growth-rate dependences on the carbon-precursor flow rate suggested different precursor decomposition kinetics and different surface reactions in CH3Cl and C3H8 systems. Photoluminescence measurement indicated the high quality of the epilayers grown at 1300°C. A mirror-like surface morphology with rare surface defects was demonstrated for the growth on low off-axis substrates at 1380°C. The most critical growth-rate limiting mechanism during the low-temperature epitaxial growth is the formation of Si clusters, which depleted the Si supply to the growth surface, in the gas phase. Presence of chlorine in the CH3Cl precursor significantly reduces but does not completely eliminate this problem. The addition of HCl during growths improved the growth rate and surface morphology drastically but also brought up some complex results, suggesting more complex mechanisms of HCl interaction with the gas-phase clusters. These complicated results were explained partly by an additional mechanism of precursor depletion enhanced in presence of HCl. Complex changes in the effective silicon to carbon ratio in the growth zone indicated that the supply of carbon species may also be enhanced at least at low HCl flow rates. This fact allowed us to suggest that the gas-phase clusters may contain a significant amount of carbon. The new model assuming coexistence of the silicon and carbon in the gas-phase clusters enabled the explanation of the complex experimental trends reported in this work.