No description available.

Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs are discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation.

Thesis (M.S.)--State University of New York at Binghamton, Department of Electrical and Computer Engineering, 2006. / Includes bibliographical references.

An analysis that accounts for the effect of standard electrostatic discharge (ESD) structures on critical LNA specifications of noise figure, input matching and gain is presented. It is shown that the ESD structures degrade LNA performance particularly for higher frequency applications. Two LNAs, one with ESD protection and one without, which operate at 2.4 GHz have been fabricated in a 0.l5��m CMOS process. The LNAs feature one of the best reported performances for CMOS LNAs to date. The LNA with ESD protection achieves a gain of 12dB, a NF of 2.77dB and an IIP3 of 2.4dBm with a power consumption of 4.65mW. The LNA without ESD protection achieves a gain of 14dB, a NF of 2.36dB and an 11P3 of -2.2dBm with a power consumption of 4.65mW. / Graduation date: 2002

Thesis (Ph. D.)--University of Washington, 2006. / Vita. Includes bibliographical references (p. 97-101).

No description available.

No description available.

No description available.

Thesis (M.S.)--University of Hawaii at Manoa, 2005. / Includes bibliographical references (leaves 95-98). / xii, 98 leaves, bound ill. 29 cm

Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1992. / Vita. Abstract. Includes bibliographical references (leaves 77-79). Also available via the Internet.