Global ETD Search

91	Design of a reconfigurable low-noise amplifier in a silicon-germanium process for radar applications Schmid, Robert L. 06 April 2012 (has links) This thesis describes a unique approach of turning on and off transistor cores to reconfigure low-noise amplifiers. A small footprint single-pole, single-throw switch is optimized for low insertion loss and high isolation. A narrowband (non-switchable) LNA is developed as a basis of comparison for reconfigurable designs. The optimized switch is incorporated into different switchable transistor core architectures. These architectures are investigated to determine their ability to reconfigure amplifier performance. One switchable transistor core topology is integrated into a cascode LNA design. An in depth stability analysis employing the S-probe technique is used to help improve the reliability of the cascode design. In addition, a single-pole, double-throw transmit/receive switch, as well as a deserializer are developed to help support the LNA block in a reconfigurable phased-array radar system. This type of flexible radar design is very beneficial in challenging electromagnetic environments. Phased-array radar Adaptive Reconfigurable Silicon-germanium Low-noise amplifier Stability K-factor S-probe Amplifiers (Electronics) Power amplifiers Silicon alloys Germanium alloys Low noise amplifiers
92	CMOS RF transmitter front-end module for high-power mobile applications Kim, Hyun-Woong 28 March 2012 (has links) With the explosive growth of the wireless market, the demand for low-cost and highly-integrated radio frequency (RF) transceiver has been increased. Keeping up with this trend, complimentary metal-oxide-semiconductor (CMOS) has been spotlighted by virtue of its superior characteristics. However, there are challenges in achieving this goal, especially designing the transmitter portion. The objective of this research is to demonstrate the feasibility of fully integrated CMOS transmitter module which includes power amplifier (PA) and transmit/receive (T/R) switch by compensating for the intrinsic drawbacks of CMOS technology. As an effort to overcome the challenges, the high-power handling T/R switches are introduced as the first part of this dissertation. The proposed differential switch topology and feed-forward capacitor helps reducing the voltage stress over the switch devices, enabling a linear power transmission. With the high-power T/R switches, a new transmitter front-end topology - differential PA and T/R switch topology with the multi-section PA output matching network - is also proposed. The multi-stage PA output matching network assists to relieve the voltage stress over the switch device even more, by providing a low switch operating impedance. By analyzing the power performance and efficiency of entire transmitter module, design methodology for the high-power handling and efficient transmitter module is established. Finally, the research in this dissertation provides low-cost, high-power handling, and efficient CMOS RF transmitter module for wireless applications. CMOS High-power switch Power amplifier RF switch Transmitter front-end Power amplifiers Amplifiers (Electronics) Amplifiers, Radio frequency
93	Multi-Gbit/s CMOS Transimpedance Amplifier with Integrated Photodetector for Optical Interconnects Song, Indal 24 November 2004 (has links) Trends toward increased integration and miniaturization of optical system components have created pressure to consolidate widely disparate analog and digital functions onto fewer and fewer chips with a goal of eventually built into a single mixed-signal chip. Yet, because of those performance requirements, the frontend circuit has traditionally used III-V compound semiconductor technologies, but the low-level of integration with other digital ICs limits the sustainability of such end products for short-distance applications. On the other hand, their CMOS counter parts, despite having such advantages as low power consumption, high yield that lowers the cost of fabrication, and a higher degree of integration, have not performed well enough to survive in such a noisy environment without sacrificing other important attributes. In this research, a high-speed CMOS preamplifier was designed and fabricated through TSMC 0.18/spl mu/m mixed-signal non-epi CMOS technology, and a 20/spl mu/m diameter InGaAs thin-film Inverted-MSM photodetector with a responsivity of 0.15A/W at a wavelength of 1550/spl mu/m was post-integrated onto the circuit. The circuit has a overall transimpedance gain of 60dB/spl Omega/, and bit-error-rate data and eye-diagram measurement results taken as high as 10Gbit/s are reported in this dissertation. MSM Receiver Fiber optics Noise Feedback
94	Analysis and Design of Low-Noise Amplifiers in Silicon-Germanium Hetrojunction Bipolar Technology for Radar and Communication Systems Thrivikraman, Tushar 15 November 2007 (has links) This thesis presents an overview of the simulation, design, and measurement of state-of-the-art Silicon-Germanium Hetro-Junction Bipolar Transistor (SiGe HBT) low-noise amplifiers (LNAs). The LNA design trade-off space is presented and methods for achieving an optimized design are discussed. In Chapter 1, we review the importance of LNAs and the benefits of SiGe HBT technology in high frequency amplifier design. Chapter 2 introduces LNA design and basic noise theory. A graphical LNA design approach is presented to aid in understanding of the high-frequency LNA design process. Chapter 3 presents an LNA design optimization method for power constrained applications. Measured results using this design technique are highlighted and shown to have record performance. Lastly, in Chapter 4, we highlight cryogenic noise performance and present measured results from cryogenic operation of SiGe HBT LNAs. We demonstrate in this thesis that SiGe HBT LNAs have the capability to meet the demanding needs for next generation wireless systems. The aim of the analysis presented herein is to provide designers with the fundamentals of designing SiGe HBT LNAs through relevant design examples and measured results. Low Noise Amplifier (LNA) LNA Silicon-Germanium SiGe Hetrojunction bipolar technology HBT Radio-Frequency Integrated Circuit RFIC Bipolar transistors Heterojunctions Amplifiers (Electronics)
95	Development and integration of silicon-germanium front-end electronics for active phased-array antennas Coen, Christopher T. 05 July 2012 (has links) The research presented in this thesis leverages silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology to develop microwave front-end electronics for active phased-array antennas. The highly integrated electronics will reduce costs and improve the feasibility of snow measurements from airborne and space-borne platforms. Chapter 1 presents the motivation of this research, focusing on the technological needs of snow measurement missions. The fundamentals and benefits of SiGe HBTs and phased-array antennas for these missions are discussed as well. Chapter 2 discusses SiGe power amplifier design considerations for radar systems. Basic power amplifier design concepts, power limitations in SiGe HBTs, and techniques for increasing the output power of SiGe HBT PAs are reviewed. Chapter 3 presents the design and characterization of a robust medium power X-band SiGe power amplifier for integration into a SiGe transmit/receive module. The PA design process applies the concepts presented in Chapter 2. A detailed investigation into measurement-to-simulation discrepancies is outlined as well. Chapter 4 discusses the development and characterization of a single-chip X-band SiGe T/R module for integration into a very thin, lightweight active phased array antenna panel. The system-on-package antenna combines the high performance and integration potential of SiGe technologies with advanced substrates and packaging techniques to develop a high performance scalable antenna panel using relatively low-cost materials and silicon-based electronics. The antenna panel presented in this chapter will enable airborne SCLP measurements and advance the technology towards an eventual space-based SCLP measurement instrument that will satisfy a critical Earth science need. Finally, Chapter 5 provides concluding remarks and discusses future research directions. Microwave circuits Phased array antenna SiGe Bipolar transistors Power amplifier (PA) T/R module RF circuits Phased array antennas Radio frequency integrated circuits Power amplifiers Amplifiers (Electronics)
96	A 5 GHz BiCMOS I/Q VCO with 360° variable phase outputs using the vector sum method Opperman, Tjaart Adriaan Kruger. January 2009 (has links) Thesis (M.Eng.(Microelectronic Engineering))--University of Pretoria, 2009. / Includes summaries in Afrikaans and English. Includes bibliographical references (leaves [74]-78). Mode of access: World Wide Web.
97	Highly efficient linear CMOS power amplifiers for wireless communications Jeon, Ham Hee 20 February 2012 (has links) The rapidly expanding wireless market requires low cost, high integration and high performance of wireless communication systems. CMOS technology provides benefits of cost effectiveness and higher levels of integration. However, the design of highly efficient linear CMOS power amplifier that meets the requirement of advanced communication standards is a challenging task because of the inherent difficulties in CMOS technology. The objective of this research is to realize PAs for wireless communication systems that overcoming the drawbacks of CMOS process, and to develop design approaches that satisfying the demands of the industry. In this dissertation, a cascode bias technique is proposed for improving linearity and reliability of the multi-stage cascode CMOS PA. In addition, to achieve load variation immunity characteristic and to enhance matching and stability, a fully-integrated balanced PA is implemented in a 0.18-m CMOS process. A triple-mode balanced PA using switched quadrature coupler is also proposed, and this work saved a large amount of quiescent current and further improved the efficiency in the back-off power. For the low losses and a high quality factor of passive output combining, a transformer-based quadrature coupler was implemented using integrated passive device (IPD) process. Various practical approaches for linear CMOS PA are suggested with the verified results, and they demonstrate the potential PA design approach for WCDMA applications using a standard CMOS technology. Power amplifier Quadrature coupler Switch Efficiency Load immunity IPD CMOS Cascode Balanced topology AM-PM Reliability Linearity Multi-mode Feedback WCDMA Amplifiers (Electronics) Power amplifiers Wireless communication systems Semiconductors
98	Ring amplification for switched capacitor circuits Hershberg, Benjamin Poris 19 July 2013 (has links) A comprehensive and scalable solution for high-performance switched capacitor amplification is presented. Central to this discussion is the concept of ring amplification. A ring amplifier is a small modular amplifier derived from a ring oscillator that naturally embodies all the essential elements of scalability. It can amplify with accurate rail-to-rail output swing, drive large capacitive loads with extreme efficiency using slew-based charging, naturally scale in performance according to process trends, and is simple enough to be quickly constructed from only a handful of inverters, capacitors, and switches. In addition, the gain-enhancement technique of Split-CLS is introduced, and used to extend the efficacy of ring amplifiers in specific and other amplifiers in general. Four different pipelined ADC designs are presented which explore the practical implementation options and design considerations relevant to ring amplification and Split-CLS, and are used to establish ring amplification as a new paradigm for scalable amplification. / Graduation date: 2012 / Access restricted to the OSU Community, at author's request, from July 19, 2012 - July 19, 2013 ring amplification ring amplifier ring amp ringamp RAMP Split-CLS CLS correlated level shifting switched-capacitor scaled CMOS scaling scalability analog to digital conversion A/D analog to digital converter ADC low power rail-to-rail slew-based stabilized ring oscillator high resolution Switched capacitor circuits
99	Improved frequency domain measurement techniques for characterizing power amplifier and multipath environments McKinley, Michael Dean 19 August 2008 (has links) This work focuses on fixing measurement inaccuracies to which models and figures of merit are susceptible in two wireless communication environments: power amplifier and multipath. To emulate or rate the performance of these environments, models and figures of merit, respectively, are often used. The usefulness of a model depends on how accurately and efficiently it emulates its real-world counterpart. The usefulness of a figure of merit depends on how accurately it represents system behavior. Most discussions on the challenges and trade-offs faced in modeling nearly always focus on the complexity of the device or channel of interest and the resultant difficulty in describing it. Similarly, figures of merit are meant only to summarize the performance of the device or channel. At some point, either in generation or verification of a model or figure of merit, there is a dependence on measured data. Though the complexity and performance of the device or channel are challenges by themselves, there are other significant sources of distortion that must be minimized to avoid errors in the measured data. For this work, the unique distortion of power amplifier and multipath environments is considered, and then errors in measurement which would obscure these distortions are eliminated. Specifically, three measurement issues are addressed: 1) identifying measurement setup artifacts, 2) achieving consistent measurement results and 3) reducing variations in the environment. This work contributes to increasing the accuracy of microwave measurements used in the modeling of nonlinear high-power amplifiers and used in figures of merit for power amplifiers and multipath channels. CDMA Code division multiple access Multisine error vector magnitude Multisine OFDM Wiener Parallel Wiener Memory Class AB Two tone measurement Asymmetry IMD Intermodulation distortion Spectral leakage VSA Vector signal analyzer Rayleigh Rice Gauss Power amplifier Multipath Measurement Microwave Error vector magnitude Wireless communication systems Microwave measurements Amplifiers (Electronics) Simulation methods

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