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Microstructures of group III-nitrides after implantation with galliumKench, P. J. January 2001 (has links)
No description available.
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Experimental Modal Analysis Of A Steel Grid FrameKaya, Huseyin 01 February 2004 (has links) (PDF)
In this study, experimental modal analysis was studied. Experimental modal analysis includes modal testing, modal parameter estimation and calibration. For this purpose a 4 span skewed steel frame was constructed in Structural Mechanics Laboratory of Civil Engineering Department of METU. The model was transported to Vibration and Acoustic Laboratory of Mechanical Engineering Department of METU. The tests were conducted by cooperation with Vibration and Acoustics Laboratory. Due to lack of experimental modal analysis software in Structural Mechanics Laboratory, modal parameter estimation and finite element updating softwares were written in Matlab platform. The written softwares were executed on the data obtained from modal testing.
15 reasonable modes are extracted from the FRFs that are obtained from modal testing. 59.23 percent consistency is found for the nominal modal comparison. At the end of calibration process 76.14 percent consistency is achieved between the experimental results and analytical results.
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Optimal Design Of Truss Structures With ActuatorsAkgoz, Asli 01 December 2003 (has links) (PDF)
Smart structures become highly popular with the developing technology. The aim of this study is to develop a basic model, which can be also used in the design of more complex systems by performing simultaneous optimization of a structure and associated controller with respect to some design parameters and feedback gains.
In this thesis work, two smart structures are used as case studies and their results are compared with the available results in the literature. The first case study is simple twobar
truss problem controlled by either one or two actuators. This problem is solved both numerically and analytically. The latter is a twenty-element parabolic truss, which is controlled by four actuators. This problem is solved numerically only.
In the optimization process, the design parameters are taken as the cross sectional areas of bar elements, positions and/or number of actuators, and the elements of closed loop gain matrix. In the second case study, in addition to these parameters, shape design parameters are also optimized.
A coordinate transformation is applied in both cases from the displacement space to the modal space. The modal model reduction method is used in the design of second problem.
The optimization goal in both cases studies is to minimize the system energy while satisfying some frequency and mass constraints. In the second case study, in addition
to the original objective function, system controllability and stability robustness are also maximized.
In the solution of design problem, two optimization algorithms are used one embedded within the other. In the outer loop, a hide and seek simulated annealing algorithm optimizes structural design parameters, and positions and/or number of
actuators. In order to generate a candidate design family for this level, optimal closed loop gain matrices are calculated by using MATLAB® / .
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Optimum Design Of Pin-jointed 3-d Dome Structures Using Global Optimization TechniquesSarac, Yavuz 01 November 2005 (has links) (PDF)
Difficult gradient calculations, converging to a local optimum without exploring the design space adequately, too much dependency on the starting solution, lacking capabilities to treat discrete and mixed design variables are the main drawbacks of conventional optimization techniques. So evolutionary optimization methods received significant interest amongst researchers in the optimization area. Genetic
algorithms (GAs) and simulated annealing (SA) are the main representatives of evolutionary optimization methods. These techniques emerged as powerful and modern strategies to efficiently deal with the difficulties encountered in conventional techniques, and therefore rightly attracted a substantial interest and popularity. The underlying concepts of these techniques and thus their algorithmic models have been devised by establishing between the optimization task and events occurring in nature. While, Darwin& / #8217 / s survival of the fittest theory is mimicked by GAs, annealing process of physical systems are employed to SA.
On the other hand, dome structures are among the most preferred types of structures for large unobstructed areas. Domes have been of a special interest in the sense that
they enclose a maximum amount of space with a minimum surface. This feature provides economy in terms of consumption of constructional materials. So merging these two concepts make it possible to obtain optimum designs of dome structures.
This thesis is concerned with the use of GAs and SA in optimum structural design of dome structures, which range from some relatively simple problems to the problems of increased complexity. In this thesis, firstly both techniques are
investigated in terms of their practicality and applicability to the problems of interest. Then numerous test problems taken from real life conditions are studied for comparing the success of the proposed GA and SA techniques with other discrete
and continuous optimization methods. The results are discussed in detail to reach certain recommendations contributing to a more efficient use of the techniques in
optimum structural design of pin-jointed 3-D dome structures.
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Efficient terahertz photoconductive sourceKim, Joong Hyun 17 November 2008 (has links)
The photoconductive method is one of the oldest methods for the generation of THz room temperature operated THz electromagnetic waves. The THz photoconductive source has operated at a lower power level in the order of hundreds of nW. In addition, the energy conversion of optical to THz efficiency has remained extremely low.
One of the most efficient THz photoconductive sources is a trap-enhanced field (TEF) effect source. The field is measured to contain more than 90% of the total DC bias within the first 5 µm of an 80 µm gap between the electrodes reaching kV/cm with only a modest bias. The overall THz power, however, has remained low, due to its rapid saturation. To date, there has been a limited understanding of the TEF effect. In this thesis, a more detailed experimental investigation of TEF effect current transport and field distribution based on annealing is presented to explain some of the underlining physics of TEF effect.
A spatially extended line excitation is introduced to effectively reduce the screening effect while still exploiting the TEF region to maintain high efficiency and reach the µW regime. The record efficiency reached by this method is demonstrated. An experimental demonstration with a numerical analysis of the line excitation is presented. The spectral analysis of both a point and a line excitation demonstrate that the line excitation spectrum is not only comparable to that of the point excitation, but also extends the range of useful lower frequency content. To further improve the THz efficiency, the line excitation THz array is investigated.
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Yield Optimization of Nitrogen Vacancy Centers in DiamondChen, Jeson 2011 August 1900 (has links)
To fully exploit the capability of NV centers in diamond as magnetic sensors and
quantum bits, the optimum production recipe as well as the method to enhance its optical
performance has been studied in this work. The NV centers in bulk diamond were
prepared by ion implantation and electron irradiation, and the optimum dose and
temperature are found by comparing its optical and magnetic performance both
experimentally and theoretically. In addition, the enhancement of optical performance
and size characterization of NV centers in nanodiamonds will be discussed in this work.
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Optimisation Heuristics for CryptologyClark, Andrew J. January 1998 (has links)
The aim of the research presented in this thesis is to investigate the use of various optimisation heuristics in the fields of automated cryptanalysis and automated cryptographic function generation. These techniques were found to provide a successful method of automated cryptanalysis of a variety of the classical ciphers. Also, they were found to enhance existing fast correlation attacks on certain stream ciphers. A previously proposed attack of the knapsack cipher is shown to be flawed due to the absence of a suitable solution evaluation mechanism. Finally, a new approach for finding highly nonlinear Boolean functions is introduced.
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Nitrogen doped zinc oxide thin filmLi, Sonny X. January 2003 (has links)
Thesis (M.S.); Submitted to the University of California, Berkeley, 210 Hearst Mining Memorial Bldg., Berkeley, CA 94720 (US); 15 Dec 2003. / Published through the Information Bridge: DOE Scientific and Technical Information. "LBNL--54116" Li, Sonny X. USDOE Director. Office of Science. Basic Energy Sciences (US) 12/15/2003. Report is also available in paper and microfiche from NTIS.
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Etude de l’auto-organisation du copolymère dibloc biosourcé hautement incompatible : Maltoheptaose-b-Polystyrène / Study of the self-assembly process of the high incompatible sugar-based diblock copolymer : Maltoheptaose-b-PolystyreneTallegas, Salomé 03 April 2015 (has links)
Dans un contexte de miniaturisation à l’extrème des composants électroniques, les copolymères àblocs apportent une réponse technologique alternative aux procédés conventionnels destructuration des matériaux par lithographie. Parmi les défis à relever, l’obtention de systèmes decopolymères suffisamment résolus demeure un élément essentiel pour que cette technique puisseoffrir une réelle alternative pour la lithographie sub-20 nm. Nous montrons au travers del’exemple du maltoheptaose-b-polystyène (MH-b-PS) que les copolymères biosourcés ont lacapacité d’atteindre une résolution sub-10 nm grâce à l’association d’un bloc hydrophile(l’oligosaccharide) et d’un bloc hydrophobe (le polystyrène). Les études par AFM, SAXS etGISAXS réalisées sur les films de MH-b-PS ont permis de montrer que le recuit sous vapeur desolvant est plus efficace que le recuit thermique pour organiser ce type de copolymère, composéd’un bloc sensible à la dégradation thermique. Ensuite, une étude inédite du recuit sous vapeur desolvant par QCM-D (Micro-balance à quartz avec mesure de dissipation) a été présentée et adémontré la capacité de cette technique à caractériser la quantité de solvant absorbée par le filmau cours du traitement ainsi que l’évolution de la viscoélasticité du film permettant ainsi d’obtenirdes informations indispensables à la compréhension du mode d’action du recuit sous vapeur desolvant. Finalement, l’étude en solution de ce copolymère ainsi que l’impact de la longueur deschaines des deux blocs sur la morphologie des films auto-organisés permettra de mieuxcomprendre à l’échelle de la chaine de polymère le comportement spécifique du MH-b-PS. / The constant desire of size reduction in nanoelectronic leads to develop processes, able to patternmaterials at the sub-10 nm scale. In this context, self-assembling block copolymers are promisingmaterials offering an alternative method to conventional lithography techniques. Currently, one ofthe major challenges in this field is to find copolymers that could address sub-10 nm pattern sizein order to provide a competitive process. In this thesis, we studied the maltoheptaose-bpolystyrene(MH-b-PS) and we showed that these kinds of sugar-based copolymers are able toself-assemble on a sub-10 nm scale thanks to the combination of a hydrophilic block (sugar) and ahydrophobic block (polystyrene). The AFM, SAXS and GISAXS studies realized on the MH-b-PS films showed that for this kind of copolymer whose one of the block is easily degraded withtemperature, the solvent annealing is more efficient than the thermal annealing to self-assemblethe copolymer. Then, an original study of the solvent annealing by QCM-D (Quartz crystalmicrobalance with dissipation monitoring) evidenced that this technique is able to characterize theviscoelasticity of the film and the amount of solvent absorbed by the copolymer during the solventtreatment. These useful measurements allowed to improve our understanding of the poorly knownsolvent annealing mechanism. To finish, we performed a study of the copolymer in solution and astudy of the impact of the chain length on the morphology of the film and were able to highlightthe specific behavior of this copolymer at the level of the polymer chain.
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Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED / Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED displayNguyen, Thi Thu Thuy 12 November 2014 (has links)
Ce travail de thèse a pour sujet l'étude de transistors en couches minces (TFTs) à base d'Indium Gallium Zinc Oxide (IGZO). Nous nous sommes intéressés au procédé de réalisation des TFTs, et à la caractérisation des couches d'IGZO afin d'obtenir les caractéristiques au plus près de l'état de l'art. Nous avons également étudié le processus de passivation, paramètre identifié comme critique pour stabiliser les TFT et atteindre de bonnes performances.Dans un premier temps, nous avons mis au point les conditions du dépôt de la couche active, et de la réalisation des TFTs. Les analyses morphologiques et structurales ont montré l'absence de cristallites de couche, ainsi qu'une surface peu rugueuse. La densité des porteurs de charge de la couche IGZO diminue lorsque le débit d'oxygène, variable durant son dépôt, augmente. La couche active déposée à 200°C et à 4 sccm d'oxygène présente une densité de porteurs de charge de l'ordre de 1E17 cm-3, valeur adaptée au fonctionnement des TFTs.Dans un second temps, nous avons évalué l'influence d'un recuit sur les caractéristiques des TFTs. Nous avons mis en évidence que le recuit sous oxygène conduit à des TFTs opérationnels, tandis que celui sous azote ou en absence de recuit induisent une suppression de l'effet de champ. Nos études ont également montré qu'une température de recuit de 300°C est favorable aux performances des transistors. Les premiers TFTs présentent des mobilités entre 5 et 15 cm2/Vs, des rapports ION/IOFF de l'ordre de 1E7, et des pentes sous le seuil d'environ 0.3 V/décade. Les tensions de seuil (VT), quant à elles, demeurent faibles donc restent à améliorer.Pour finir, nous avons étudié l'impact d'une couche de passivation sur les TFTs, en raison de la dégradation des caractéristiques de ces derniers dans l'atmosphère ambiante. Les couches de SiO2 (déposée par PECVD) et d'Al2O3 (déposée par ALD) ont été étudiées. Nous avons mis en évidence que ces passivations peuvent dégrader les TFTs au lieu de les protéger. VT tend à se décaler dans le sens négatif lorsque l'on augmente l'épaisseur de la couche d'Al2O3 ou le débit de Silane durant le dépôt du SiO2. Une des raisons principales de ce phénomène est la présence de l'hydrogène généré lors de la passivation. Nous avons évalué les solutions pour éviter la dégradation lors du dépôt et assurer une bonne protection du TFT. / This thesis aims to study thin-film transistors (TFTs) based on Indium Gallium Zinc Oxide (IGZO) in the framework of applications in active matrix flat panel LCD and OLED display. The TFT fabrication process and the characterization of IGZO deposited film are two key studies in this thesis in order to obtain TFT electrical characteristics close to the state-of-the-art. We have also studied the passivation which is identified as crucial for stabilizing the TFT and achieving good performance.The deposition of the active layer and the fabrication process of TFT are firstly studied. Smooth surface of deposited films is demonstrated by AFM and the absence of the crystalline peak of the material is shown by X-ray diffraction. The density of charge carriers decreases with the increase of oxygen flow rate. The active layer deposited at 200°C and at 4 sccm of oxygen flow has a carrier density in the order of 1E17 cm-3 which is suitable for TFT operation. This condition is chosen to fabricate IGZO-based TFT in this thesis.In a second step, we have evaluated the influence of annealing condition on TFTs' electrical characteristics. Annealing in oxygen leads to operational TFTs while doing the same under nitrogen or the absence of annealing suppresses field-effect behavior. Our studies have also shown that annealing temperature of 300°C is suitable to obtain good performance of the transistors. From this study, we have obtained TFTs with high mobility (between 5 and 15 cm2/Vs), high ION/IOFF ratios (about 1E7), and reasonable sub threshold slope (about 0.3 V/decade). The threshold voltage (VT) however remains low (between -4 and -2 V) and needs to be improved.Finally, we have investigated the impact of a passivation layer on the performance of IGZO TFTs. SiO2 film (deposited by PECVD) and Al2O3 film (formed by ALD) were studied. We have observed that such passivation can degrade the TFTs rather than protecting them. Concretely, VT shifts in negative direction when increasing the Al2O3 layer thickness or the silane flow during SiO2 deposition. Principal reason for this shift is the presence of hydrogen which is generated during passivation. We have evaluated some solutions to reduce the degradation during deposition and ensure a good protection of the TFTs.
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