No description available.

The purpose of this investigation was the determination of the thermal conduction properties of a single crystal of bismuth at liquid-helium temperatures in magnetic fields up to eighteen kilogauss.

To obtain information on the band structure of bismuth, galvanomagnetic potentials were measured in a single crystal at liquid-helium and liquid-nitrogen temperatures. These measurements were analyzed for information on the different carriers, particularly for the existence of a high-mobility band of holes.

No description available.

No description available.

No description available.

The (1-x)SrBi2Ta2O9-xBi3TaTiO9 thin films fabricated by modified metalorganic solution deposition technique showed much improved properties compared to SrBi2Ta2O9: a leading candidate material for memory applications. A pyrochlore free crystalline phase was obtained at a low annealing temperature of 600 oC and grain size was found to be considerably increased for the (1-x)SrBi2Ta2O9-xBi3TaTiO9 compositions. The film properties were found to be strongly dependent on the composition and annealing temperatures. The measured dielectric constant of the thin films was in the range 180-225 for films with 10-50 mol % of Bi3TaTiO9 content in the solid solution. Ferroelectric properties of (1-x)SrBi2Ta2O9-xBi3TaTiO9 thin films were significantly improved compared to SrBi2Ta2O9. For example, the observed 2Pr and Ec values for films with 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 composition, annealed at 650 oC, were 12.4 micro C/cm2 and 80 kV/cm, respectively. The solid solution thin films showed less than 5 % decay of the polarization charge after 10^10 switching cycles and good memory retention characteristics after about 10^6 s of memory retention. The size and temperature effect of 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 thin films were studied by determining how the ferroelectric properties vary with film thickness and temperature. It was found that the ferroelectric properties were determined by the grain size, and not by the thickness of the film in our studied thickness range of 80-350 nm. A 80 nm thick film showed good ferroelectric properties similar to the 350 nm thick film. Thermal stability of the 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 thin film was found to be much better compared to the SrBi2Ta2O9 and Pb(Zr,Ti)O9 thin films due to its higher Curie temperature and lower Schottky activation energy according to temperature changes. Also, 0.7SrBi2Ta2O9-0.3Bi3TaTiO9 thin films has shown good ferroelectric properties on multilayer system such as PtRh/PtRhOx/poly-Si suggest their suitability for high density FRAM applications. / Ph. D.

The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor that can be used to store digital information. In a high density memory the capacitor is placed on the top of a poly-silicon plug which is connected to the drain of a transistor. Such a configuration poses constraints on the processing conditions of the ferroelectric capacitor in addition to the already existing reliability issues of a ferroelectric capacitor. The current research is an attempt to integrate the ferroelectric capacitor directly into a high density memory structure. Pb_1.1Zr_0.53Ti_0.47O₃ (PZT) and SrBi₂Ta₂O₉ (SBT) are two most promising materials for ferroelectric memory applications. PZT has excellent ferroelectric properties with wide operating temperature range. However, PZT exhibits a considerable loss of switchable polarization with cumulative switching cycles. This phenomenon is known as fatigue and is one of the critical problems affecting the life time of ferroelectric memories. In this research, Ir based electrodes are shown to improve fatigue characteristics of PZT based capacitors not only by enhancing a homogenous growth of perovskite phase of PZT but also by lowering the entrapment of oxygen vacancies at the interface. These Ir electrodes also acted as diffusion barriers for silicon, oxygen and lead. Additionally, Ir electrodes were found to be chemically stable at the processing temperatures of PZT capacitors. These features of Ir based electrodes could help in realization of a practical PZT based high density non volatile random access memories. SBT is an another promising ferroelectric material for ferroelectric memory applications. While SBT has a fatigue free nature, it has a very high processing temperature (>800 °C). Such a high processing temperature limits the choice of electrodes that could be used to integrate the ferroelectric capacitor into the high density memory structure. In this research, an attempt is made to lower the processing temperature and suitable electrodes are chosen accordingly, to enable the integration of SBT based capacitors into high density memories. Lowering the processing temperature was obtained by growing a-b oriented SBT crystallites rather than c-axis oriented crystallites. Additionally, reliability (degradation) and yield of SBT thin film capacitors was found to be correlated to the amount of segregated bismuth oxide in the films. Elimination of secondary phase bismuth oxide was found to result in dramatic improvement in the reproducibility of SBT thin films with a processing temperature close to 750 °C. PtRh based electrodes were found to be quite suitable for integrating SBT capacitors into high density memory structures. These electrodes could withstand a processing temperature of 750 °C while preventing the interdiffusion of silicon, oxygen and bismuth. A solid solution of SBT and Bi₃TiNbO₉ (BTN) is made which reduced the processing temperature of the capacitor material from 750 °C to 650 °C while retaining the excellent fatigue and retention characteristics of SBT. / Ph. D.

Recently, multiferroics-defined as materials with coexistence of at least two of the ferroelectric, ferroelastic and ferromagnetic effects-have attracted enormous research activities. In this thesis, the structure and properties of multiferrioic BiFeO3-x%PbTiO3 and Fe-x%Ga crystalline solutions were investigated. First, the results show that modified BiFeO3-PbTiO3 based ceramics have significantly enhanced multiferroic properties, relative to BiFeO3 single crystals. The data reveal: (i) a dramatic increase in the induced polarization; and (ii) the establishment of a remnant magnetization by a breaking of the translational invariance of a long-period cycloidal spin structure, via substituent effects. In addition, temperature dependent magnetic permeability investigations of BiFeO3-xPbTiO3 crystalline solutions have shown that aliovalent La substitution results in a significant increase in the permeability. Second, room temperature high-resolution neutron and x-ray diffraction studies have been performed on Fe-x%Ga crystals for 12<x<25at%. It has been observed that the structures of both Fe-12%Ga and Fe-25%Ga are tetragonal; however, near the phase boundary between them, an averaged-cubic structure was identified. In addition, an unusual splitting along the transverse direction indicates that the crystals are structurally inhomogeneous. / Master of Science

It has been known for some time that the experimentally determined energies of the excited states of donors in silicon agree favorably with the values predicted by the effective mass theory due to Kohn (3). However, the experimentally determined energies of the ground states in silicon differ from the predicted value by at least 3.5 mev (2). This has been attributed to the neglect of effects near the impurity ion. By making corrections to the potential for small distances from the impurity ion and using symmetry argument, it has been shown (4) that the ground state in reality splits into a non-degenerate level, is 1s (A₁), which is the ground state, and doubly and triply degenerate 1s levels, 1s(E) and 1s(T₁) respectively. Recent work in this area has shown evidence of the 1s state split in antimony-, arsenic-, and phosphorus-doped silicon (1). At liquid helium temperature the ground state is the only state significantly populated so that, by using infrared radiation, for example, transitions may be induced from the ground state to the excited states and continuum. Thus the energies of the excited states relative to the ground state may be determined. Our data shows evidence that the 1s state split occurs for bismuth-doped silicon with the upper 1s levels having energies of-31.4 mev and -36.5 mev relative to the bottom of the conduction band. This shows that the lowest-lying upper 1s level is separated from the ground state by 34.1 mev and the two upper 1s levels are separated by 5.1 mev. The latter agrees very favorably with the data of Aggarwal (1), however, we are unable to determine the ordering of these states from our data. That the former is larger than the values found Aggarwal is to be expected because of the larger donor ionization energy of bismuth in silicon. / M.S.