Neste trabalho, investigou-se capacitores MOS fabricados sobre superfícies irregulares contendo formas retangulares periódicas com 100 nm de altura, obtidas a partir de corrosão por plasma localizadas. Os óxidos de porta com 4,5 nm de espessura foram crescidos em ambientes ultrapuros de O2 ou pirogênico a fim de comparar a uniformidade de cobertura sobre os degraus verticais dos perfis retangulares. Foi mostrado que a oxidação pirogênica ou convencional na temperatura de 850 ºC permite obter óxidos de porta sobre degraus com altura de 100nm com baixa corrente de fuga e alto campo de ruptura. Esse comportamento pode ser interpretado como óxidos de porta perfeitamente amoldados sobre os degraus de 100nm de altura. O impacto deste resultado é agora a possibilidade de implementar óxidos de porta para transistores de porta envolvente e FinFETs. / In this work, it was investigated MOS capacitors fabricated onto periodic rectangular shapes, 100 nm in height, obtained by localized plasma etching onto silicon wafer surfaces. 4.5-nm gate oxide growth was performed in ultrapure dry O2 or pyrogenic environments in order to compare the coverage uniformity at the step edges of rectangular shapes defined onto the silicon surfaces. It was shown that pyrogenic and conventional oxidation at 850 ºC allows one to obtain gate oxides on 100nm-stepped silicon surfaces with low leakage current and high dielectric breakdown field. This behavior can be understood as highly conformal gate oxides over silicon steps with height of 100 nm. The impact of this result is now the feasibility of implementing gate oxides for surrounding gate transistors (SGT\'s) and FinFETs.

Neste trabalho estudamos o processo de deposição do filme de silício policristalino dopado com oxigênio (SIPOS) depositado por LPCVD, a partir da mistura entre a silana (SiH4) e o óxido nitroso (N2O); para a sua aplicação como camada de passivação superficial em dispositivos de potência. As características físicas e elétricas do filme SIPOS foram analisadas em função dos seguintes parâmetros de deposição: pressão, razão gasosa entre (N2O/SiH4), espaçamento entre as lâminas de processo, tempo para a formação de uma camada de pré-oxidação entre SIPOS-Si e tempo de processo. Observamos que o espaçamento entre as lâminas de processo é um importante parâmetro de processo, pois este influi diretamente na uniformidade em espessura e na concentração de oxigênio presente nos filmes depositados. A caracterização elétrica dos filmes SIPOS foi realizada através de capacitores MSS. Verificamos a validade do modelo sobre o comportamento da condutividade elétrica em função da proporção gasosa (N2O/SiH4) proposto por Ni e Arnold. Uma vez determinado as melhores condições de processo, os filmes SIPOS foram depositados sobre diodos de potência pré processados fornecidos pela AEGIS Semicondutores Ltda. Estes diodos foram então caracterizados quanto a sua tensão de ruptura reversa e a sua corrente de fuga reversa. Os histogramas dos dados experimentais mostraram que diminuindo-se o tempo para a formação de uma camada de pré-oxidação entre a interface SIPOS-Si, temos uma diminuição da corrente reversa que flui pelo filme SIPOS. Os diodos de potência fornecidos pela Aegis Semicondutores Ltda foram projetados para suportarem uma tensão de ruptura reversa de 650 V. Os diodos passivados com SIPOS suportaram tensões de ruptura de até 1.200 V. / In this work, the SIPOS (Semi-Insulating Polycrystalline Silicon) LPCVD deposition process was studied to be applied as passivation layer in power devices. It was used a mixture of silane and nitrous oxide to promote the deposition process. The physical and electrical characteristics were analyzed in function of the follow process parameters: total pressure, gas ratio (N2O/SiH4), distance between samples in the LPCVD wafer holder; pre oxidation time and total process time. It was observed that the distance between samples in the LPCVD wafer holder is direct related to the thickness uniformity and in the oxygen concentration present in the SIPOS thin films. MSS capacitors were fabricated to perform the electrical characterization of the deposited SIPOS films. The validity of the model proposed by Ni and Arnold, to the behavior of the electrical conductivity in function of gas ratio (N2O/SiH4), was confirmed. The SIPOS thin film was deposited over pre processed diodes samples, supplied by AEGIS Semicondutores Ltda, in the best process conditions obtained in the previous experiments. The behavior of the leakage current and the breakdown voltage were analyzed. The histograms of the breakdown voltage data showed that decreasing the pre oxidation time of the SIPOS-Si interface, the leakage current through the SIPOS films decreases. The power diodes supplied by Aegis Semicondutores Ltda was designed to support a breakdown voltage of 650 V. The power diodes passivated with SIPOS films supported a breakdown voltage up to 1200 V.

The thesis deals with implementation of information system in a real company, according to the IPMA standard. The realized project ensures rationalization and automation of client enquiry processing in the company. A long-term benefit is in providing business contingency.

Neste trabalho, investigou-se capacitores MOS fabricados sobre superfícies irregulares contendo formas retangulares periódicas com 100 nm de altura, obtidas a partir de corrosão por plasma localizadas. Os óxidos de porta com 4,5 nm de espessura foram crescidos em ambientes ultrapuros de O2 ou pirogênico a fim de comparar a uniformidade de cobertura sobre os degraus verticais dos perfis retangulares. Foi mostrado que a oxidação pirogênica ou convencional na temperatura de 850 ºC permite obter óxidos de porta sobre degraus com altura de 100nm com baixa corrente de fuga e alto campo de ruptura. Esse comportamento pode ser interpretado como óxidos de porta perfeitamente amoldados sobre os degraus de 100nm de altura. O impacto deste resultado é agora a possibilidade de implementar óxidos de porta para transistores de porta envolvente e FinFETs. / In this work, it was investigated MOS capacitors fabricated onto periodic rectangular shapes, 100 nm in height, obtained by localized plasma etching onto silicon wafer surfaces. 4.5-nm gate oxide growth was performed in ultrapure dry O2 or pyrogenic environments in order to compare the coverage uniformity at the step edges of rectangular shapes defined onto the silicon surfaces. It was shown that pyrogenic and conventional oxidation at 850 ºC allows one to obtain gate oxides on 100nm-stepped silicon surfaces with low leakage current and high dielectric breakdown field. This behavior can be understood as highly conformal gate oxides over silicon steps with height of 100 nm. The impact of this result is now the feasibility of implementing gate oxides for surrounding gate transistors (SGT\'s) and FinFETs.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第22447号 / 工博第4708号 / 新制||工||1735(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 山田 啓文, 准教授 船戸 充 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Design systems have gained traction in the last few years. They have been primarily used by big tech companies to improve collaboration between designers and developers and to speed up the development process of their digital products. There is no formal definition of what a design system is and what it should entail as of the time of writing. It is believed that communication breakdown during the creation of design systems occurs because designers and developers do not understand each other’s fields of expertise. The purpose of this study is to explore common aspects that cause communication breakdown between developers and designers when creating a design system. The method of choice for this study is semi- structured interviews conducted with frontend/web developers, exploring their views and experiences. The results of this study indicate that there are both similarities and differences between peoples’ views on design systems and that the lack of understanding of a developer's field of work can be seen as an aspect that can cause a communication breakdown. Furthermore, the results imply that one of the factors which can contribute to a more successful understanding of the handoff for developers is the visualization of the design. The major limitations of this study are the lack of scientific literature on the topic of design systems as well as the limited number of participants.

This thesis deals with the design of a new maintenance system of a powder coating line at ABB. The theoretical part describes history of maintenance, used maintenance methods, and types of organizational structure. The practical part describes the current state of maintenance of the production line, analysis of the situation, and subsequently design of the new maintenance system.

The subject of this diploma thesis is the study of a sample position influence on results of an experiment in laser spectroscopy. The aim is to design an appropriate way for standardization of signal obtained at different conditions with the respect to its applicability for stand-off analysis. In the theoretical part of the diploma thesis there are the basics of LIBS method described together with the issues of stand-off experiment and both, basic and advanced approches for the processing and correction of obtained spectra. Also the experiment is designed here, which is used for the analysis of the sample inclination and distance influence on the detected signal. The choice of appropriate ways for the signal correction follows and their applicability and efficiency is then experimentally tested.

This diploma thesis deals with using laser-induced breakdown plasma spectroscopy for determining the elemental structure of unknown samples. It was necessary to design an appropriate method to qualify material by laser-induced emission spectrum. Pretreatment of data and using a variety of chemometrics methods had to be done in order to qualify the structure of elements. We achieved a required solution by projecting the data to a new PCA space, creating clusters and computing the Euclidean distance between each cluster. The experiment in the practical part was set to detect an interface of two elements. We created a data file simulating the ablation on the interface. This data set was gradually processed applying a mathematical-chemical-physical view. Several data procedures have been compiled: approximation by Lorenz, Gauss and Voigt function and also a pretreatment method such as the detection of outliers, standardization by several procedures and subsequent use of principal components analysis. A summarization of processes for input data is fully described in the thesis.

Tato diplomová práce se zabývá návrhem optomechanického modulu pro chemické mapování metodou spektroskopie laserem buzeného plazmatu (LIBS). Cílem je vyvinout modul, který bude umožňovat analýzu spektrálních čar zinku v ultrafialové (UV) oblasti. V práci jsou popsány teoretické základy metody LIBS a následně je provedena rešerše zaměřená na problematiku dálkové LIBS analýzy. V diplomové práci jsou prezentovány možné optické návrhy fokusační a sběrné optiky, z nichž jsou vybrané následně otestovány. Výsledkem práce je konstrukční návrh modulu.