Organic light-emitting Diode (OLED) emits light itself. It owns many advantages of optical-electronic characteristics as compared with Thin Films Transistor-Liquid Crystal Display (TFT-LCD). In order to achieve the requirement for full color flat panel display, the three primary colors which are red, green, blue (R,G,B) with high luminance¡Bhigh current efficiency¡Band high color purity are important study of research and development for OLED. In our experiment, the major materials are NPB¡BDPVBi¡BAlq3¡BLiF¡BPBD¡BDCJTB¡FThe materials of NPB¡BDPVBi¡BAlq3,LiF is used as hole transporting layer¡Bblue emission layer¡Belectron transporting layer, and electron injection layer, respectively. PBD is hole-blocking layer and DCJTB is red emission layer which is intended to indirectly demonstrate the hole-blocking effect in the interface between NPB and DPVBi layer. The blue light emission with short wavelength plays an important role in color conversion method (CCM) of full color technology. In the study, we improve and research on color purity of blue OLED by various thicknesses of organic layer. In addition, we research the influence of the device with different thicknesses of PBD layer as hole-blocking layer. In order to improve the color mixing phenomenon, we add extra DPVBi layer to the device with PBD layer. It can improve the blue color purity and obtain narrower full width at half maximum (FWHM).

A standard procedure for P3HT:PCBM bulk-heterojunction solar cells has been developed. Fabrication conditions, such as environment; solution concentration, thickness of active layer or post-treatment methods are systematically optimized. The best device performance is obtained by slow-drying spin-coated P3HT:PCBM (1:0.8) blend layer with DCB as solvent. C60:LiF composite films with up to 80% LiF concentration as hole blocking layer have been developed to significantly increase power conversion efficiencies of OPV devices. The short-circuit current density is greatly enhanced, without sacrificing open-circuit voltage and fill factor. Due to its superior oxygen diffusion blocking effect, the C60:LiF composite layer also can provide a more effective passivation film than a thin LiF layer, resulting in an impressive enhancement in air stability of devices.

A standard procedure for P3HT:PCBM bulk-heterojunction solar cells has been developed. Fabrication conditions, such as environment; solution concentration, thickness of active layer or post-treatment methods are systematically optimized. The best device performance is obtained by slow-drying spin-coated P3HT:PCBM (1:0.8) blend layer with DCB as solvent. C60:LiF composite films with up to 80% LiF concentration as hole blocking layer have been developed to significantly increase power conversion efficiencies of OPV devices. The short-circuit current density is greatly enhanced, without sacrificing open-circuit voltage and fill factor. Due to its superior oxygen diffusion blocking effect, the C60:LiF composite layer also can provide a more effective passivation film than a thin LiF layer, resulting in an impressive enhancement in air stability of devices.

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Considering biocompatibility, the Dye Sensitized Solar Cell (DSC) based on titanium dioxide should play a major role in the future of solar energy. In this ongoing study, different components and ambient process conditions for the fabrication of were investigated. Titanium dioxide substrate thickness and morphology was found to have a direct impact on the cell efficiency. Scanning Electron Microscopy (SEM) was used to investigate the TiO2 nanostructure. Different chemical treatments and electrolytes were also explored towards optimizing the cell performance. A group of porphyrin based organic dyes were synthesized and evaluated. Standard solar cell characterization techniques such as current-voltage and spectral response measurements were employed to evaluate the cell performance.

Orientador: José Roberto Ribeiro Bortoleto / Resumo: O presente trabalho apresenta o estudo da interface de filmes finos de óxido de zinco (ZnO) e óxido de estanho (SnO2). Foram investigadas propriedades morfológicas e elétricas a respeito desta heterojunção. A deposição dos filmes foi realizada através da técnica de magnetron sputtering RF. A morfologia de superfície foi investigada e caracterizada através de técnicas de perfilometria e microscopia eletrônica de varredura com emissão de campo. O objetivo central desta pesquisa consiste em avaliar a interação SnO2/ZnO, uma vez que esse composto possui potencial para aplicações em células fotovoltaicas. Nessas aplicações o SnO2 atua como camada transportadora de elétrons, que apresenta como principal efeito o aumento no tempo de recombinação do par elétron-buraco, gerado quando a célula fotovoltaica é submetida à incidência luminosa. Para a investigação foram depositados filmes de SnO2 com diferentes espessuras sobre ZnO. Além disso, foram estudadas as propriedades eletrônicas do ZnO para garantir que este se comporta no trabalho como um óxido transparente condutivo (TCO do inglês Transparent Conductive Oxide), o que possibilita sua aplicação nas células fotovoltaicas. O sistema produzido apresentou características que indicam ser um material promissor para as aplicações citadas. / Abstract: This work presents the analysis of the interface between thin films of zinc oxide (ZnO) and tin oxide (SnO2). Morphological and electrical properties were investigated regarding this heterojunction. The deposition of the films was performed using the RF magnetron sputtering technique. The surface morphology was investigated and characterized by profiling and Scanning Electron Microscopy with Field Emission Gun Techniques. The main objective of this research is to evaluate the SnO2/ZnO interaction, since this compound has potential for applications in photovoltaic cells. In these applications the SnO2 acts as a electron transport layer presenting as a main effect the increase in the recombination time of the electron-hole pair, generated when the photovoltaic cell is submitted to incidence of light. For this investigation SnO2 films of different thicknesses were deposited on a reference ZnO film. In addition, the electronic properties of ZnO were evaluated to ensure that it behaves as a transparent conducting oxide (TCO), which enables its application in photovoltaic cells. The system produced presented characteristics that suggests it is a promising material for the aforementioned applications. / Doutor

Designs for deep ultraviolet (DUV) edge emitting laser diodes (LDs) based on the wurtzite III-nitride (III-N) material system are presented. A combination of proprietary and commercial advanced semiconductor LD simulation software is used to study the operation of III-N based DUV LDs theoretically. Critical factors limiting device performance are identified based on an extensive literature survey. A comprehensive design parameter space is investigated thoroughly with the help of advanced scripting capabilities. Several design strategies are proposed to eliminate the critical problems completely or partially. A DUV LD design is proposed based exclusively on AlInN active layers grown epitaxially on bulk AlN substrates because AlInN offers a promising alternative to AlGaN for the realization of LDs and LEDs operating in the DUV regime. The proposed AlInN-based design also features a tapered electron blocking layer (EBL) instead of a homogeneous one. Tapered EBLs redistribute the interfacial polarization charge volumetrically throughout the entire EBL thickness via compositional grading, and eliminate the parasitic inversion layer charge. AlGaN based DUV LD designs are explored also because at present, it may be difficult to grow AlInN epitaxially with superior crystalline quality. Polarization charge matching is proposed to improve electron and hole wavefunction overlap within the active region. Although the strategy of polarization charge matching has already been proposed in the literature to enhance performance of visible wavelength LEDs and LDs, the proposed design presents the first demonstration that polarization charge matching is also feasible for DUV LDs operating at sub-300 nm wavelengths. A lateral current injection (LCI) LD design is proposed featuring polarization-charge-matched barriers and regrown Ohmic contacts to avoid a group of issues related to the highly inefficient p-type doping of wide bandgap III-N materials in vertical injection designs. The proposed design partially decouples the problem of electrical injection from that of optical confinement. Although the idea of an LCI LD design has been proposed in the literature in the 90s to be used as longer wavelength active sources in optoelectronic integrated circuits using GaInAsP/InP and related material systems, the proposed design is the first theoretical demonstration that this concept can be applied to DUV LDs based on III-N material system. To solve the problem of hole transport in vertical injection designs, a DUV LD design based exclusively on AlGaN material system is presented, featuring an inverse-tapered p-waveguide layer instead of an EBL. Several EBL designs are investigated, and compared with conventionally-tapered EBL design. Through judicious volumetric redistribution of fixed negative polarization charge, inverse tapering may be exploited to achieve nearly flat valence band profiles free from barriers to hole injection into the active region, in contrast to conventional designs. Numerical simulations demonstrate that the inverse tapered strategy is a viable solution for efficient hole injection in vertical injection DUV LDs operating at shorter wavelengths (< 290 nm).

The innovative design of flat panel volume computed tomography (CT) systems has recently led to the emergence of a wide spectrum of new applications for both diagnostic and interventional purposes, such as ultra-high resolution bone imaging, image guided interventions, dynamic CT angiography, and interventional neuroradiology. Most of these applications require low X-ray dose to limit potential harm to the patient. One of the main challenges of low dose imaging is to maintain a quantum noise limited system to achieve the highest possible signal to noise ratio (SNR) at a given dose. One potential method to achieve a quantum noise limited system is to employ a high gain detector. Current flat panel CT technology is based on indirect conversion detectors that contain a scintillator and hydrogenated amorphous silicon (a-Si:H) p-i-n photodetectors which have a gain below unity and require a specialized p-layer. In this thesis, an alternative detector to the p-i-n photodetector, which can achieve gain above unity and thus aid in achieving quantum noise limited systems is investigated for large area flat panel imaging. The proposed detector is based on amorphous selenium (a-Se). Amorphous selenium is the most highly developed photoconductor for large area direct conversion X-ray imaging and is still the only commercially available large area direct conversion flat panel X-ray detector. However, the use of a-Se for indirect conversion imaging has not been significantly explored. Amorphous selenium has field dependent mobility and conversion efficiency, which increase with increasing electric field. It is also the only large area compatible avalanche-capable material; a property that was discovered more than 30 years ago. This unique property could be leveraged to provide the gain necessary for low dose medical imaging applications. The only current commercial avalanche capable a-Se optical detector uses electron beam readout in vacuum, which is not large area compatible and makes integration with pixelated readout electronics challenging. The detector structure proposed in this research seeks to address the challenges associated with integration of an avalanche capable a-Se detector with large area X-ray imager. One important aspect in the development of a-Se avalanche detectors is reducing the dark current and preventing a-Se breakdown as the electric field across the device is increased. A high dark current reduces the dynamic range of the detector, it increases the noise level, and it can lead to crystallization of the detector due to joule heating. To overcome the dark current problem, different blocking layers that allow for integration with large area flat panel imagers were investigated. Experimental results from fabricated devices provided the basis for the choice of the most suitable blocking layer. Two device structures are proposed using the selected blocking layer, a vertical structure and a lateral structure, each having associated benefits and drawbacks. It was shown that introducing a polyimide blocking layer brought down the dark current more than four orders of magnitude at high electric fields and does not deteriorate the charge transport properties of the detectors. The polyimide blocking layer also greatly minimizes physical stress related crystallization in a-Se improving reliability. Gain above unity was observed in the vertical structure and the initiation of impact ionization was verified by performing time-of-flight experiments. Although impact ionization was not verified in the lateral structure, this device structure was found to be highly sensitive to ultraviolet light due to the absence of a top contact layer. Devices were fabricated on several different substrates, including a CMOS substrate, to demonstrate their integration compatibility with large area readout electronics. The exhibited performance of the vertical device structure demonstrates that it is a suitable alternative to the p-i-n photodetector for low dose imaging applications.

General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due to high lighting efficiency, long lifetime, and Hg-free nature. Incandescent and fluorescent light sources are used for general lighting almost everywhere. But their lighting efficiency is very limited: only 20-30 lm/W for incandescent lighting bulb, approximately 100 lm/W for fluorescent lighting. State-of-the-art InGaN LEDs with a luminous efficacy of over 200 lm/W at room temperature have been reported. However, the goal of replacing the incandescent and fluorescent lights with InGaN LEDs is still elusive since their lighting efficiency decreases substantially when the injection current increases beyond certain values (typically 10-50 Acm-2). In order to improve the electroluminescence (EL) performance at high currents for InGaN LEDs, two approaches have been undertaken in this thesis. First, we explored the preparation and characterization of non-polar and semi-polar GaN substrates (including a-plane, m-plane and semi-polar planes). These substrates serve as promising alternatives to the commonly used c-plane, with the benefit of a reduced polarization-induced electric field and therefore higher quantum efficiency. It is demonstrated that LEDs on m-plane GaN substrates have inherently higher EL quantum efficiency and better efficiency retention ability at high injection currents than their c-plane counterparts. Secondly, from a device structure level, we explored the possible origins of the EL efficiency degradation at high currents in InGaN LEDs and investigated the effect of hot electrons on EL of LEDs by varying the barrier height of electron blocking layer. A first-order theoretical model is proposed to explain the effect of electron overflow caused by hot electron transport across the LED active region on LED EL performance. The calculation results are in agreement with experimental observations. Furthermore, a novel structure called a “staircase electron injector” (SEI) is demonstrated to effectively thermalize hot electrons, thereby reducing the reduction of EL efficiency due to electron overflow. The SEI features several InyGa1-yN layers, with their In fraction (y) increasing in a stepwise manner, starting with a low value at the first step near the junction with n-GaN.

In this work, thin and compact films of TiO2, Nb2O5 and WO3 nanoparticles were prepared to be used as contact/blocking layer in dye sensitized solar cells (DSCs). The films were produced by deposition of 30 bilayers of TiO2(ac)/TiO2(bas), TiO2(ac)/Nb2O5(bas) and TiO2(ac)/WO3(bas) using the layer-by-layer technique (LbL) from nanoparticle sols of TiO2 (pH = 2 and 10), Nb2O5 (pH = 10) and WO3 (pH 10) prepared by sol-gel method. The TiO2/TiO2 and TiO2/Nb2O5 underlayers resulted in an increase of 25% and 87% respectively, in the efficiency of DSCs when compared to those without the contact/blocking layers. The application of TiO2/WO3 films did not result in any improvement of DSC efficiency. Factors such as thickness, nanoparticles homogeneity, oxides concentration on the films and roughness directly influence on the efficiency of such films as contact/blocking layer. Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) images, confirmed that all films are constituted by spherical nanoparticles with homogeneous diameters smaller than 20 nm, resulting on compact and low porous surfaces. This morphology ensures a physical barrier between the electrolyte and the conductive glass used as electrode in DSCs. The TiO2/TiO2 and TiO2/Nb2O5 films also exhibited higher roughness than the surface of the conductive glass without the bilayers, which increases the interaction with the mesoporous TiO2 film. The molar ratios of the species present on the films are controlled by the pH employed during deposition, and were determined by X- ray photoelectron spectroscopy (XPS). The Ti4+/Nb5+ and Ti4+/W6+ ratios were 1.6 and 19 respectively, which evidences a higher concentration of TiO2 nanoparticles on the films. For a better understanding of the role of the bilayers on the charge transfer processes, the substrates were analyzed by Electrochemical Impedance Spectroscopy (EIS). The electronic properties of the oxides also influence the efficiency of the LbL films as contact/blocking layers. Due to its higher band gap, Nb2O5 nanoparticles impose an electronic barrier to the electrons transfer from the conductive substrate to the electrolyte, additionally to the physical barrier. / Neste trabalho foram preparados filmes finos e compactos de óxidos nanoparticulados de TiO2, Nb2O5 e WO3 para a aplicação como camada de contato/bloqueio em células solares sensibilizadas por corante (DSCs). Os filmes foram produzidos pela deposição de 30 bicamadas de TiO2(ác)/TiO2(bás), TiO2(ác/Nb2O5(bás) e TiO2(ác)/WO3(bás) utilizando a técnica de automontagem (Layer-by-Layer ou LbL), a partir dos sóis nanoparticulados de TiO2 (pH = 2 e 10), Nb2O5 (pH = 10) e WO3 (pH = 10) sintetizados pelo método sol-gel. A presença das bicamadas de TiO2/TiO2, TiO2/Nb2O5 gerou aumentos relativos na eficiência das DSCs de 25% e 87% respectivamente, quando comparadas às DSCs sem as bicamadas. Já o filme de TiO2/WO3 não gerou nenhuma melhoria na eficiência das DSCs. Fatores como a espessura, homogeneidade das nanopartículas, concentração dos óxidos nos filmes e a rugosidade influenciam diretamente na eficiência dos filmes como camada de contato/bloqueio. Imagens de Microscopia Eletrônica de Varredura com Emissão de Campo (MEV-FEG) e Microscopia de Força Atômica (MFA) confirmaram que todos os filmes apresentaram nanopartículas esféricas com diâmetros homogêneos e menores que 20 nm, o que acarreta na formação de superfícies compactas e pouco porosas. Esta morfologia garante uma barreira física entre o eletrólito e a superfície do vidro condutor utilizado como eletrodo nas DSCs. Os filmes de TiO2/TiO2 e TiO2/Nb2O5 apresentaram também rugosidades maiores que a da superfície do vidro condutor sem as bicamadas, o que aumenta a interação entre com o filme de TiO2 mesoporoso. As razões molares das espécies presentes nos filmes são controladas pelo pH empregado durante as deposições, e foram determinadas por Espectroscopia de Fotoelétrons Excitados por raios-X (XPS). As razões Ti4+/Nb5+ e Ti4+/W6+ foram de 1,6 e 19 respectivamente, o que evidencia uma maior quantidade de nanopartículas de TiO2 nos filmes. Para melhor entender o papel das bicamadas nos processos de transferência de cargas, os substratos foram analisados por Espectroscopia de Impedância Eletroquímica (EIE). As propriedades eletrônicas dos óxidos também influenciam na eficiência dos filmes automontados como camada de contato/bloqueio. Devido ao seu maior valor de band gap, as nanopartículas de Nb2O5 impõem, além de uma barreira física, uma barreira eletrônica para a transferência dos elétrons do substrato condutor para o eletrólito. / Mestre em Química