L'objectif de cette thèse est de développer des approximations pour décrire les effets à N-corps dans l'absorption et la photoémission des matériaux avec électrons localisés. Le traitement complet par la mécanique quantique de ce problème difficile repose sur la résolution de l'équation de Schrödinger pour la fonction d'onde à N-corps, ce qui en pratique nécessite des approximations. Pour simplifier, la Théorie de le Fonctionnelle de la Densité (DFT) introduit le système de particules indépendantes de Kohn et Sham. Cependant, il s'avère difficile d'obtenir des propriétés autres que la densité et l'énergie totale. Dans cette thèse, nous travaillons avec des fonctions de Green. Le niveau de complexité de ce cadre, en principe exact, se situe entre la DFT et les méthodes de fonctions d'onde, et de nombreux problèmes restent à résoudre.Quand on décrit l'excitation d'un électron localisé, certaines approximations introduisent une auto-interaction ou auto-écrantage. Ce problème est naturellement évité lorsque l'on utilise une interaction coulombienne généralisée (Chap. 3). De plus, quand l'électron localisé a peu de recouvrement avec les autres électrons, on peut penser que leur interaction est classique. Dans ce cas, l'effet principal à N-corps est la réaction des autres électrons : ils écrantent l'excitation. Dans les approximations habituelles telles que le GW ou la “cumulant expansion”, l'écrantage est traité seulement en réponse linéaire. Cependant, l'excitation d'un électron localisé devrait représenter une forte perturbation. Par conséquent, il se pourrait que les contributions non-linéaires à l'écrantage soient importantes. Comment peut-on vérifier quand cela est vrai ? Et comment peut-on inclure ces effets ? D'autre part, même en réponse linéaire, on pourrait faire mieux que les approximations habituelles, parce que l'écrantage en réponse linéaire est souvent calculé dans l'approximation de la phase aléatoire (RPA). De combien peut-on améliorer les résultats, même en restent en réponse linéaire, si on va au-delà de RPA? Ces points seront abordés dans la thèse.En ce qui concerne l'écrantage, au Chap. 5 on utilise un modèle zéro-dimensionel pour étudier, d'un côté, les effets au-delà de RPA en réponse linéaire, et de l'autre côté, les effets au-delà de la réponse linéaire mais restant en RPA. Fait intéressant, on constate qu'on doit traiter les deux en même temps afin d'obtenir des améliorations significatives. On doit donc trouver des approximations pour aller au-delà de RPA qui sont suffisamment simples pour être utilisées même dans un régime non-linéaire. Dans cette thèse, on développe des approximations basées sur la théorie des perturbations, et on en teste d'autres, déjà existantes, le modèle.L'écrantage est décrit par la fonction diélectrique. Cette fonction permet aussi de calculer les spectres d'absorption. Au Chap.6 on étudie la fonction diélectrique d'un solide modèle à l'aide des fonctions de Wannier localisées. Cela nous permet de mettre en évidence les annulations entre la self-énergie et les effets excitoniques dans le cadre des fonctions de Green et, à partir des résultats, de dériver un potentiel d'échange et corrélation de Kohn-Sham, et un noyau d'échange et corrélation pour la DFT dépendante du temps (TDDFT).Le Chap. 7 aborde la question de comment faire apparaître l'écrantage non-linéaire explicitement dans la formulation ab initio. On propose une réponse possible, en utilisant la localisation de l'électron pour dériver une fonction de Green 'cumulant' au-delà de la réponse linéaire habituelle. On suggère deux niveaux d'approximations pour calculer les expressions en pratique, et on montre quelques résultats préliminaires. Dans les deux cas, la TDDFT est utilisée pour décrire l'écrantage.Etant donné qu'une combinaison de fonctions de Green et de TDDFT semble être une bonne stratégie pour simplifier le problème à N-corps, le Chap. 8 conclut avec quelques idées supplémentaires. / The aim of this thesis is to develop approximations to describe many-body effects in photoemission and optical properties of materials containing localized electrons. This is a tough problem. The full quantum-mechanical treatment is based on the solution of the Schrödinger equation for the many-body wavefunction, which is cumbersome and requires in practice some approximations. One simplified approach is given by Density Functional Theory (DFT) with the Kohn-Sham system of independent particles, but it is difficult to access properties other than the density and total energy. In this thesis we start from an in principle exact framework, the Green's functions. They are intermediate in complexity between DFT and the full wavefunction methods.For the removal or excitation of a localized electron one important point is to avoid self-interaction and self-screening. This is naturally achieved when one uses a generalized Coulomb interaction (Chap.3). Moreover, supposing that the localized electron has little overlap with the others, we can think that their interaction is classical. Then the main many-body effect is the reaction of the other electrons to the removal or excitation of the localized electron: this is screening of the hole or electron-hole pair by the other electrons. However, in many standard approximations in the Green's functions framework, such as GW or the cumulant expansion, screening appears in the linear response approximation. Instead, we can expect that the removal or excitation of a localized electron is a strong perturbation to the other electrons. Therefore, it could be that non-linear contributions to screening are important. How can we verify when this is true? And how can we include these effects? On the other hand, even in linear response one could do better than standard approximations, because the linear response screening itself is often calculated in the Random Phase Approximation (RPA). How much do things improve when one goes beyond the RPA but stays in linear response? We address these points in the thesis.Concerning the screening, in Chap.5 we first use a simple zero-dimensional model to study on one side, effects beyond the RPA within linear reponse and, on the other side, effects beyond linear response but staying within the RPA. Interestingly, we find that we have to treat both at the same time in order to find significant improvement. This means that we have to find promising ways to go beyond the RPA that are simple enough to allow us to go to the non-linear regime. Therefore we develop approximations based on perturbation theory and test some already existent ones in the model.Screening is expressed through the dielectric function, which gives us also directly absorption. This is another reason to study it. In order to be more realistic than the zero-dimensional model, in Chap.6 we study the dielectric function of a simple solid using localized Wannier functions. This allows us to highlight cancellations between self-energy and excitonic effects in the framework of Green's functions and from this derive a simple Kohn Sham exchange-correlation potential and kernel for Time-Dependent DFT (TDDFT).In Chap.7 we go back to the problem of non-linear screening and address the question: how can we make it appear explicitly in the full formulation? We show how to do this,and how to use the approximation of a localized electron in order to derive a cumulant Green's function beyond the standard linear response one. We propose two levels of approximations to evaluate the resulting expression in practice, and show some preliminary results. In both cases, TDDFT is used to describe screening.Since a combination of Green's functions and TDDFT seems to be a good strategy to simplify the many-body problem, Chap.8 contains some more considerations about possible combinations.

An internal eight-band LTE/WWAN handset antenna integrated with a USB connector is presented. The proposed antenna comprises an antenna ground which faces a protruded ground extended from the main ground of the handset to accommodate a USB connector. The antenna ground is used as a shorting portion to short-circuit the antenna to ground such that the coupling between the antenna ground and the protruded ground is effectively suppressed. In this case, the proposed antenna can be integrated with a USB connector mounted on the protruded ground, leading to compact integration of the antenna inside the handset. Good radiation characteristics of the antenna are also obtained, and the proposed antenna occupies 60 ¡Ñ 12 ¡Ñ 4.8 mm3 (about 3.4 cm3) only. Effects of the user¡¦s head and hand on the proposed antenna are studied, and the simulated SAR and HAC results are also analyzed in this thesis.

O objetivo deste trabalho é examinar os efeitos causados pela interação elétron-fônon em pontos quânticos semicondutores polares. Primeiramente, nós apresentamos cálculos detalhados da taxa de espalhamento e do tempo de relaxação eletrônico em pontos quânticos simples (Single Quantum Dot - SQD) e em dois pontos quânticos acoplados (Coupled Quantum Dots - CQDs) devido à interação entre o elétron e os fônons longitudinais acústicos (LA) na presença e na ausência de campos externos, magnético ou elétrico. O regime de energia usado no cálculo do espalhamento eletrônico foi escolhido de forma que os fônons LA dominam o processo de espalhamento. Nós verificamos que na ausência de campo externo, a taxa de espalhamento do elétron por fônons LA entre dois níveis específicos é essencialmente determinada pela diferença de energia entre estes dois níveis. Observamos que um campo magnético modula fortemente a taxa de espalhamento. Verificamos que o processo de relaxação via multicanais desempenha um papel essencial no mecanismo de relaxação do elétron de estados excitados para o estado fundamental. Um campo magnético externo aumenta ainda mais a relaxação através de transições indiretas. Também fizemos um estudo teórico dos efeitos da interação elétron-fônons longitudinais ópticos (LO) em dois pontos quânticos acoplados compostos de InAs/AlInAs. Fizemos cálculos para o polaron ressonante num regime onde a energia de confinamento do elétron é comparável a energia do fônon L0 utilizando o formalismo da função de Green e teoria de perturbação considerando temperatura zero e finita. Observamos uma renormalização do estado fundamental obtida devido a absorção de fônons virtuais para uma temperatura T > O. Discutimos os efeitos do tunelamento entre os pontos quânticos e a sua influência nas propriedades eletrônicas e analisamos o espectro de absorção óptica neste sistema. Verificamos modificações nos orbitais eletrônicos como resultado direto do tunelamento assistido por fônons. Finalmente, avaliamos os efeitos da interação elétron-fônons L0 na densidade de estados do elétron confinado em pontos quânticos utilizando dois modelos distintos: Um modelo não-perturbativo e o formalismo da função de Green. Estudamos cada método separadamente e avaliamos a densidade de estados como função da temperatura e do confinamento lateral. Consideramos um sistema com apenas dois níveis eletrônicos de energia e comparamos os dois métodos avaliando as suas diferenças básicas. Utilizando o método não-perturbativo fizemos cálculos da densidade de estados para um regime de acoplamento forte entre o elétron e os fônons LO / The purpose of this work is to study effects of electron-phonons interactions in polar semiconductor quantum dots. Firstly, we present a detailed calculation on the electron-LA-phonon scattering rates and electron relaxation processes in single and coupled quantum dots in the absence and in the presence of external magnetic or electric fields. In the absence of external field, interplay among the effective confinement lengths in different directions as well as the phonon wavelength leads to a strong oscillation of the LA-phonon scattering rate between two levels. In other words, the scattering depends strongly on the geometry and confinement potential of the quantum dot. An external magnetic field also strongly modulates the scattering rate in severa1 orders of magnitude. The magnetic field induced effects are very similar in single quantum dot (SQD) and coupled quantum dots (CQDs) where the effective confinement strength in the x-direction affects strongly the scattering rate. However, we find that the multiple relaxation process plays an essential role for electron relaxing from the excited states to ground state both in single and coupled quantum dots. Including all possible relaxation channels, an external magnetic field enhances the relaxation through indirect transitions. Secondly, we present a theoretical study on the effects of electron-LO-phonon interaction in two coupled stacked InAs/InAIAs quantum dots. The contribution of resonant and nonresonant electron-LO-phonon coupling to the polaron states are obtained in the framework of t he Green function formalism and the perturbation approach at zero and finite temperatures. Ground state renormalization is found due to virtual phonon absorption at T > O. Tunneling effects between the dots have been addressed and their influente on the electronic properties and optical absorption are analyzed. Topological modifications of electronic orbitals are found as a result of phonon-assisted tunneling. Finally, we investigate the effects of electron-LO-phonon interaction on the electron density of states in quantum dots using two distinct models. A non-perturbative model and the Green function formalism. Within the non-perturbative model, we consider only two electronic levels in a quantum dot interacting to LO-phonons. An exact solution is obtained for the polaron states and spectral function. We evaluate the density of states in the regime at zero and finite temperature for severa1 values of the lateral confinement. We compare the density of states obtained within the two models. Furthermore, we study the polaron effects in strong electron-LO-phonon coupling regime based on the non-perturbative model

Bandwidth enhancement of the LTE/WWAN handset antenna achieved by improving the excited surface current distribution in the system ground plane is presented. To achieve this goal, the system ground plane is shaped to be of a C-shape in this thesis. In this case, the longitudinal excited surface current in the system ground plane can have a smooth distribution. The proposed antenna is disposed at one edge of the C-shaped system ground plane, and the antenna comprises a driven monopole strip, a shorted monopole strip and a distributed parallel resonance (PR) circuit. By controlling the resonant frequency of the distributed PR circuit, it can result in dual-resonance excitation of the lowest resonant mode contributed by the shorted monopole strip to cover the LTE700/GSM850/900 operation. The antenna also occupies a small volume of 44 ¡Ñ 10 ¡Ñ 5 mm3 (about 2.2 cm3). Good radiation characteristics of the antenna are also obtained. For practical applications, effects of the electrical connection between the system ground plane and the surrounding metal elements such as the battery¡¦s metal casing and the handset metal midplate are studied. The simulated SAR (Specific Absorption Rate) and HAC (Hearing Aid Compatibility) results are also analyzed.

While in conventional superconductors coupling between electrons and phonons is known to be responsible for the electron pairing, for the high temperature superconductors the pairing media remains under debates. Since the interactions of electrons with other degrees of freedom (phonons, magnetic excitations, etc) manifest themselves by an additional renormalization in the electronic dispersion, they can be investigated by means of Angle Resolved Photoelectron Spectroscopy. In the work renormalization in two families of high Tc cuprates have been studied. Along the diagonal of the two-dimensional BZ, the renormalization effects are represented by an unusual band dispersion that develops a so-called ‘‘kink’’. In the vicinity of the (pi, 0) point of the BZ, where the order parameter reaches its maximum, the renormalization is noticeably stronger and makes itself evident even in the shape of a single spectral line measured for a fixed momentum. It was shown that for the Bi-2212 samples substitution of Cu atoms in Cu-O plane changes renormalization features in ARPES spectra both in nodal and antinodal parts of the Brillouin zone. The smearing of the dip in the in the spectral line shape measured at (pi; 0) point can be well explained by coupling of electrons to the magnetic resonance mode. The effect of Zn and Ni substitution on the antinodal ARPES spectra was shown to be in good agreement with the influence of these impurities on magnetic resonance mode seen in inelastic neutron scattering experiments. This, in addition to the previous ARPES studies of temperature and doping dependence of peak-dip-hump structure, mass renormalization near antinodal region and a kink in the nodal part of Brillouin zone, provides further evidence that the coupling to magnetic excitations, rather than to phonons, is responsible for the observed unusual renormalization. Unlike the well studied Bi-2212 family of cuprates, photoemission on YBCO-123 turns out to be much more complicated. The observed spectra have a strong contribution from a heavily overdoped surface component with the hole doping level of about x~0.30, which is weakly dependent on the sample stochiometry. Absence of any signs of superconductivity in the spectra of the overdoped component was argued to result from the unusually high doping level. This conclusion is supported by the fact that the overdoped bands give rise to the Fermi surface and band structure consistent with the predictions of the LDA calculations, as well as, by the dependence of the photoemission matrix element on the excitation energy, which closely follows that of the superconducting bulk component. Specific experimental geometry was used to enhance the signal coming from the superconducting component. In particular, experiments with circularly polarized light bundled with simple theoretical considerations enabled better separation of the surface and the bulk components. This type of experiments also suggests that the overdoped component is mainly localized in the topmost CuO2 bilayer, while the next bilayers in the YBCO-123 structure already represent bulk properties and retain superconductivity. Using partially Ca substituted samples it was possible to obtain spectra with a suppressed overdoped component. The likely reason for the suppression is a shift of the most probable cleavage plane from the Ba–O interface to the Y layer. Spectra from the Ca substituted sample clearly reveal a sizable superconducting gap, and strong renormalization effects in the vicinity of the antinodal point. The fact that the renormalization vanishes above Tc and has strong momentum dependence, diminishing away from the (pi; 0)/(0; pi) point, strongly suggests that the reason for this renormalization in YBCO-123 is coupling of the electronic subsystem to spin resonance, similar to the case of Bi-2212.

O objetivo deste trabalho é examinar os efeitos causados pela interação elétron-fônon em pontos quânticos semicondutores polares. Primeiramente, nós apresentamos cálculos detalhados da taxa de espalhamento e do tempo de relaxação eletrônico em pontos quânticos simples (Single Quantum Dot - SQD) e em dois pontos quânticos acoplados (Coupled Quantum Dots - CQDs) devido à interação entre o elétron e os fônons longitudinais acústicos (LA) na presença e na ausência de campos externos, magnético ou elétrico. O regime de energia usado no cálculo do espalhamento eletrônico foi escolhido de forma que os fônons LA dominam o processo de espalhamento. Nós verificamos que na ausência de campo externo, a taxa de espalhamento do elétron por fônons LA entre dois níveis específicos é essencialmente determinada pela diferença de energia entre estes dois níveis. Observamos que um campo magnético modula fortemente a taxa de espalhamento. Verificamos que o processo de relaxação via multicanais desempenha um papel essencial no mecanismo de relaxação do elétron de estados excitados para o estado fundamental. Um campo magnético externo aumenta ainda mais a relaxação através de transições indiretas. Também fizemos um estudo teórico dos efeitos da interação elétron-fônons longitudinais ópticos (LO) em dois pontos quânticos acoplados compostos de InAs/AlInAs. Fizemos cálculos para o polaron ressonante num regime onde a energia de confinamento do elétron é comparável a energia do fônon L0 utilizando o formalismo da função de Green e teoria de perturbação considerando temperatura zero e finita. Observamos uma renormalização do estado fundamental obtida devido a absorção de fônons virtuais para uma temperatura T > O. Discutimos os efeitos do tunelamento entre os pontos quânticos e a sua influência nas propriedades eletrônicas e analisamos o espectro de absorção óptica neste sistema. Verificamos modificações nos orbitais eletrônicos como resultado direto do tunelamento assistido por fônons. Finalmente, avaliamos os efeitos da interação elétron-fônons L0 na densidade de estados do elétron confinado em pontos quânticos utilizando dois modelos distintos: Um modelo não-perturbativo e o formalismo da função de Green. Estudamos cada método separadamente e avaliamos a densidade de estados como função da temperatura e do confinamento lateral. Consideramos um sistema com apenas dois níveis eletrônicos de energia e comparamos os dois métodos avaliando as suas diferenças básicas. Utilizando o método não-perturbativo fizemos cálculos da densidade de estados para um regime de acoplamento forte entre o elétron e os fônons LO / The purpose of this work is to study effects of electron-phonons interactions in polar semiconductor quantum dots. Firstly, we present a detailed calculation on the electron-LA-phonon scattering rates and electron relaxation processes in single and coupled quantum dots in the absence and in the presence of external magnetic or electric fields. In the absence of external field, interplay among the effective confinement lengths in different directions as well as the phonon wavelength leads to a strong oscillation of the LA-phonon scattering rate between two levels. In other words, the scattering depends strongly on the geometry and confinement potential of the quantum dot. An external magnetic field also strongly modulates the scattering rate in severa1 orders of magnitude. The magnetic field induced effects are very similar in single quantum dot (SQD) and coupled quantum dots (CQDs) where the effective confinement strength in the x-direction affects strongly the scattering rate. However, we find that the multiple relaxation process plays an essential role for electron relaxing from the excited states to ground state both in single and coupled quantum dots. Including all possible relaxation channels, an external magnetic field enhances the relaxation through indirect transitions. Secondly, we present a theoretical study on the effects of electron-LO-phonon interaction in two coupled stacked InAs/InAIAs quantum dots. The contribution of resonant and nonresonant electron-LO-phonon coupling to the polaron states are obtained in the framework of t he Green function formalism and the perturbation approach at zero and finite temperatures. Ground state renormalization is found due to virtual phonon absorption at T > O. Tunneling effects between the dots have been addressed and their influente on the electronic properties and optical absorption are analyzed. Topological modifications of electronic orbitals are found as a result of phonon-assisted tunneling. Finally, we investigate the effects of electron-LO-phonon interaction on the electron density of states in quantum dots using two distinct models. A non-perturbative model and the Green function formalism. Within the non-perturbative model, we consider only two electronic levels in a quantum dot interacting to LO-phonons. An exact solution is obtained for the polaron states and spectral function. We evaluate the density of states in the regime at zero and finite temperature for severa1 values of the lateral confinement. We compare the density of states obtained within the two models. Furthermore, we study the polaron effects in strong electron-LO-phonon coupling regime based on the non-perturbative model

Orientador: José Antônio Brum / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-24T13:58:03Z (GMT). No. of bitstreams: 1 Mendes_UdsonCabral_D.pdf: 12052104 bytes, checksum: 67d2d70413e86cd914ef0145b639ff5b (MD5) Previous issue date: 2014 / Resumo: Nesta tese, investigamos teoricamente as propriedades eletrônicas e ópticas de poços quânticos e pontos quânticos de semicondutores magnéticos diluídos. Este estudo é fortemente motivado por muitos resultados experimentais sobre as propriedades ópticas desse materiais. Usando a teoria do funcional da densidade dependente de spin descrevemos os estados eletrônicos como função do campo magnético externo para poços quânticos que possuem barreiras dopadas com impurezas magnéticas. Nosso modelo leva em conta os efeitos de muitos-corpos do gás de buracos e as interações entre portadores e os íons magnéticos. Comparamos nossos resultados com os dados experimentais disponíveis, que apresentam forte oscilações da luz polarizada circularmente como função do campo magnético. Nossos resultados apresentam excelente concordância qualitativa e quantitativa com os resultados experimentais. Mostramos que os efeitos de troca do gás de buraco são responsáveis pela forte oscilação observada na fotoluminescência. Também realizamos uma investigação sistemática dos parâmetros da heteroestrutura afim de aumentar a interação de troca entre portadores e íons de Mn. Com o nosso modelo entedemos os diferentes regimes de relaxação de spin do elétron em poços quânticos com barreiras dopadas com impurezas magnéticas. Nós também investigamos as propriedades eletrônicas e ópticas de pontos quânticos carregados dopados com uma única impureza magnética em seu centro. Usando métodos de diagonalização exata mostramos que os elétrons que não estão diretamente acoplados com o íon de Mn acoplam-se via uma interação indireta que é mediada pela interação elétron-elétron. Este acoplamento indireto entre elétrons e Mn pode ser tanto ferromagnético quanto antiferromagnético dependendo de ambos confinamento e número de camadas eletrônicas confinadas no ponto quântico. Demonstramos que este acoplamento indireto é um efeito importante mesmo quanto o íon de Mn não esta no centro do ponto quântico. O acoplamento indireto existe independentemente do tipo de interação direta entre portadores e a impureza magnética. Também extendemos a teoria de fotoluminescência para essa heteroestrutura. Observamos que a interação indireta entre portadores e íon magnético gera uma estrutura fina em ambos os estados iniciais e finais da emissão, o que nos permite determinar o número de camadas confinadas no ponto quântico e o spin eletrônico. Com esse método de diagonalização exata, explicamos a origem da estrutura fina do biexciton confinado em um ponto quântico dopado com uma única impureza magnética / Abstract: In this thesis, we theoretically investigate the electronic and optical properties of diluted magnetic semiconductors quantum wells and quantum dots. This is strongly motivated by many experimental results on the optical properties of these materials. Using spin-density functional theory we described the electronic states as a function of the external magnetic field for quantum wells which have barriers doped with magnetic impurities. Our model takes into account the many-body effects of the two-dimensional hole gas and the interaction between carriers and the magnetic ions. We compare our findings with the available experimental data, which shows strong oscillations in the circularly polarized light as a function of the magnetic field. Our results show excellent qualitative and quantitative agreement with the experimental data. We show that the hole gas exchange effects are responsible for the strong oscillations observed in the photoluminescence. We perform a systematic investigation of the heterostructure parameters in order to enhance the carriers-Mn exchange interaction. With our model we understand the different regime of the electron¿s spin relaxation in quantum wells with barriers doped with Mn impurities. We also investigate the electronic and optical properties of charged quantum dots doped with a single magnetic impurity in its center. Using an exact diagonalization method we show that the electrons that are not directly coupled with Mn do so via an indirect coupling mediated by electron-electron interaction. This indirect electron-Mn coupling can be either ferromagnetic or antiferromagnetic depending on both quantum dot confinement and the number of electronic confined shells. We also demonstrate that the indirect electron-Mn coupling is an important effect even when Mn is off-center. This coupling exists independently of the type of the direct interaction between carriers and Mn impurity. We also extend the theory of photoluminescence for charged quantum dots containing a single magnetic impurity. We show that the indirect interaction between carriers and magnetic ion generates a fine structure in both initial and final states of the emission, which allows us to determinate the number of confined shells in the quantum dots and the electronic spins. Whit this exact diagonalizationmethod, we explain the origin of the fine structure of a biexciton confined in quantum dot containing a single Mn impurity / Doutorado / Física / Doutor em Ciências

<p>    </p> <p><em>P</em>-wave Efimov physics for three equal mass fermions with different symmetries has been modeled using two-body interactions of Lennard-Jones potentials between each pair of Fermi atoms, and is predicted to modify the long range three-body interaction potential energies, but without producing a real Efimov effect. Our analysis treats the following trimer angular momenta and parities, L^Π = 0⁺,1⁺,1⁻ and 2⁻, for either three spin-up fermions (↑↑↑), or two spin-up and one spin-down fermion (↑↓↑). Our results for the long range behavior in some of those cases agree with previous work by Werner and Castin and by Blume <em>et al.</em>, namely in cases where the s-wave scattering length goes to infinity. This thesis extends those calculated interaction energies to small and intermediate hyperradii comparable to the van der Waals length, and considers additional unitarity scenarios where the p-wave scattering volume approaches infinity. The crucial role of the diagonal hyperradial adiabatic correction term is identified and characterized. For the equal mass fermionic trimers with two different spin components near the unitary limit are shown to possess a universal van der Waals bound or resonance state near s-wave unitarity, when p-wave interactions are included between the particles with equal spin. Our treatment uses a single-channel Lennard-Jones interaction with long range two-body van der Waals potentials. While it is well-known that there is no true Efimov effect that would produce an infinite number of bound states in the unitary limit for these fermionic systems, we demonstrate that another type of universality emerges for the symmetry L^Π = 1⁻. The universality is a remnant of Efimov physics that exists in this system at p-wave unitarity, and it leads to modified threshold and scaling laws in that limit. Application of our model to the system of three lithium atoms studied experimentally by Du, Zhang, and Thomas [Phys. Rev. Lett. <strong>102</strong>, 250402 (2009)] yields a detailed interpretation of their measured three-body recombination loss rates. </p>

While in conventional superconductors coupling between electrons and phonons is known to be responsible for the electron pairing, for the high temperature superconductors the pairing media remains under debates. Since the interactions of electrons with other degrees of freedom (phonons, magnetic excitations, etc) manifest themselves by an additional renormalization in the electronic dispersion, they can be investigated by means of Angle Resolved Photoelectron Spectroscopy. In the work renormalization in two families of high Tc cuprates have been studied. Along the diagonal of the two-dimensional BZ, the renormalization effects are represented by an unusual band dispersion that develops a so-called ‘‘kink’’. In the vicinity of the (pi, 0) point of the BZ, where the order parameter reaches its maximum, the renormalization is noticeably stronger and makes itself evident even in the shape of a single spectral line measured for a fixed momentum. It was shown that for the Bi-2212 samples substitution of Cu atoms in Cu-O plane changes renormalization features in ARPES spectra both in nodal and antinodal parts of the Brillouin zone. The smearing of the dip in the in the spectral line shape measured at (pi; 0) point can be well explained by coupling of electrons to the magnetic resonance mode. The effect of Zn and Ni substitution on the antinodal ARPES spectra was shown to be in good agreement with the influence of these impurities on magnetic resonance mode seen in inelastic neutron scattering experiments. This, in addition to the previous ARPES studies of temperature and doping dependence of peak-dip-hump structure, mass renormalization near antinodal region and a kink in the nodal part of Brillouin zone, provides further evidence that the coupling to magnetic excitations, rather than to phonons, is responsible for the observed unusual renormalization. Unlike the well studied Bi-2212 family of cuprates, photoemission on YBCO-123 turns out to be much more complicated. The observed spectra have a strong contribution from a heavily overdoped surface component with the hole doping level of about x~0.30, which is weakly dependent on the sample stochiometry. Absence of any signs of superconductivity in the spectra of the overdoped component was argued to result from the unusually high doping level. This conclusion is supported by the fact that the overdoped bands give rise to the Fermi surface and band structure consistent with the predictions of the LDA calculations, as well as, by the dependence of the photoemission matrix element on the excitation energy, which closely follows that of the superconducting bulk component. Specific experimental geometry was used to enhance the signal coming from the superconducting component. In particular, experiments with circularly polarized light bundled with simple theoretical considerations enabled better separation of the surface and the bulk components. This type of experiments also suggests that the overdoped component is mainly localized in the topmost CuO2 bilayer, while the next bilayers in the YBCO-123 structure already represent bulk properties and retain superconductivity. Using partially Ca substituted samples it was possible to obtain spectra with a suppressed overdoped component. The likely reason for the suppression is a shift of the most probable cleavage plane from the Ba–O interface to the Y layer. Spectra from the Ca substituted sample clearly reveal a sizable superconducting gap, and strong renormalization effects in the vicinity of the antinodal point. The fact that the renormalization vanishes above Tc and has strong momentum dependence, diminishing away from the (pi; 0)/(0; pi) point, strongly suggests that the reason for this renormalization in YBCO-123 is coupling of the electronic subsystem to spin resonance, similar to the case of Bi-2212.