Thesis (Ph.D.)--McMaster University (Canada), 1987. / Source: Dissertation Abstracts International, Volume: 49-07, Section: B, page: 2799. Supervisors: D. A. Thompson; W. W. Smeltzer; J. A. Davies.

Thesis (Ph. D.)--University of Sydney, 2004. / Title from title screen (viewed 5 May 2008). Submitted in fulfilment of the requirements for the degree of Doctor of Philosophy to the School of Physics, Faculty of Science. Degree awarded 2004; thesis submitted 2003. Includes bibliographical references. Also available in print form.

Thesis--University of California, Berkeley, 1959. / "Chemistry-General" -t.p. Includes bibliographical references (p. 75-79).

Orientadores: Peter Jurgen Tatsch, Stanislav A. Moshkalyov / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-05T15:04:36Z (GMT). No. of bitstreams: 1 Nunes_AlcineiMoura_M.pdf: 4164375 bytes, checksum: 7cc7a3a84a2aa99efc455551e270bc57 (MD5) Previous issue date: 2005 / Resumo: Este trabalho apresenta os resultados e as discussões dos mecanismos de corrosão por plasma de filmes de silício policristalino e nitreto de silício para aplicações em dispositivos MEMS e CMOS. A corrosão foi feita em um reator convencional de corrosão por plasma em modo RIE (Reactive Ion Etching). Para aplicação em MEMS, corrosões de silício policristalino com perfis anisotrópicos e seletividade maior que 10 para óxido de silício foram obtidos. As misturas gasosas utilizadas na corrosão foram: SF6/CF4/CHF3 e SF6/CF4/N2. Processos híbridos, utilizando duas etapas de corrosão em condições diferentes, num mesmo processo, foram feitos para possibilitar a obtenção de perfis altamente anisotrópicos, com seletividade elevada. Para avaliar melhor a evolução do perfil de corrosão, foram utilizadas amostras com filmes espessos de silício policristalino (>3mm). Para aplicação em eletrodo de transistores CMOS, afinamento de linhas de 5mm para 1mm de largura foram obtidos com perfil anisotrópico (A~0,95) em processos híbridos, utilizando uma primeira etapa de corrosão com condições de maior bombardeio iônico e menor seletividade, e uma segunda etapa com menor bombardeio iônico e maiores seletividades para o óxido e fotorresiste. Corrosões de nitreto de silício (SiNx), com seletividade elevada são imprescindíveis para aplicação em tecnologia LOCOS. Resultados de corrosões e filmes de nitreto de silício para esta aplicação foram feitas utilizando as seguintes misturas gasosas: CF4/O2/N2, CF4/H2, SF6/CF4/N2 e CHF3/O2. As Maiores seletividades obtidas foram de aproximadamente 10 para óxido e aproximadamente 7 para o substrato de silício. Os filmes foram caracterizados com vários equipamentos. Um Perfilômetro foi utilizado para medir a profundidade das corrosões, e por conseguinte, calcular a taxa de corrosão através da divisão pelo tempo. Um Elipsômetro foi utilizado para medir as espessuras e índices de refração dos filmes utilizados. O FTIR (Fourier Transform Infrared Spectrocopy) foi utilizado para caracterizar a composição do filme de nitreto de silício após o tratamento térmico. Imagens SEM (Scanning Electron Microscopy) dos filmes corroídos foram feitas para analisar o perfil e mecanismo de corrosão para cada mistura / Abstract: This work presents the results and the discussion about mechanisms of plasma etching of polysilicon and silicon nitride films for applications in MEMS and CMOS devices. The etching was performed in a conventional reactor of plasma etching in a RIE mode (Reactive Ion Etching). For application in MEMS, polysilicon etching with anisotropic profile and high selectivity (>10) for silicon oxide was obtained. The mixtures used in etching were SF6/CF4/CHF3 and SF6/CF4/N2. Hybrid processes, using two etching stages in different conditions, in the same etching process, were done as possible solutions for highly anisotropic profiles with elevated selectivity. The evolution of the etching profile is better evaluated using polysilicon thick films (>3mm). For application in CMOS transistors electrode, 5mm to 1mm thinning was obtained with anisotropic profile (A~0,95) in hybrids processes, using the first stage in conditions with elevated ionic bombardment and reduction selectivity, and the second stage with reduction ionic bombardment and elevated selectivity to the oxide and photorresist. Highly selective silicon nitride etching (SiNx) is necessary for application in LOCOS technology. Results of the etching and silicon nitride films for this application was performed using the following mixtures: CF4/O2/N2, CF4/H2, SF6/CF4/N2 and CHF3/O2. High selectivity was obtained for silicon oxide (>10) and silicon substrate (~7). The films were characterized by various equipment. The Profiler was used to measure the etching depth, and herewith, the etching rate was evaluated. The Elipsometer was used to measure the refractive index and width of the films. FTIR (Fourier Transform Infrared Spectroscopy) was used to characterize the composition of the nitride film after the thermal treatment. SEM (Scanning Electron Microscopy) images of the etched films were done to analyse the profile and the etching mechanism for each mixture / Mestrado / Microeletronica / Mestre em Engenharia Elétrica

京都大学 / 0048 / 新制・課程博士 / 博士(エネルギー科学) / 甲第21472号 / エネ博第377号 / 新制||エネ||74(附属図書館) / 京都大学大学院エネルギー科学研究科エネルギー変換科学専攻 / (主査)准教授 増田 開, 教授 長﨑 百伸, 教授 大垣 英明 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DFAM

No / The Sikhote-Alin (SA) meteorite is an example of a type IIAB octahedrite iron meteorite with ca. 0.5 wt% phosphorus (P) content principally in the form of the siderophilic mineral schreibersite (Fe,Ni)(3)P. Meteoritic in-fall to the early Earth would have added significantly to the inventory of such siderophilic P. Subsequent anaerobic corrosion in the presence of a suitable electrolyte would produce P in a form different to that normally found within endogenous geochemistry which could then be released into the environment. One environment of specific interest includes the low pH conditions found in fumaroles or volcanically heated geothermal waters in which anodic oxidation of Fe metal to ferrous (Fe2+) and ferric (Fe3+) would be coupled with cathodic reduction of a suitable electron acceptor. In the absence of aerobic dioxygen (E-o = +1.229 V), the proton would provide an effective final electron acceptor, being converted to dihydrogen gas (E-o = 0 V). Here we explore the hydrothermal modification of sectioned samples of the Sikhote-Alin meteorite in which siderophilic P-phases are exposed. We report on both, (i) simulated volcanic conditions using low pH distilled water and (ii) geothermally heated sub-glacial fluids from the northern Kverkfjoll volcanic region of the Icelandic Vatnajokull glacier. A combination of X-ray photoelectron spectroscopy (XPS) and electrochemical measurements using the scanning Kelvin probe (SKP) method reveals that schreibersite inclusions are significantly less susceptible to anodic oxidation than their surrounding Fe-Ni matrix, being some 550 mV nobler than matrix material. This results in preferential corrosion of the matrix at the matrix-inclusion boundary as confirmed using topological mapping via infinite focus microscopy and chemical mapping through Raman spectroscopy. The significance of these observations from a chemical perspective is that electrochemically noble inclusions such as schreibersite are likely to have been released into the geological environment through an undermining corrosion of the surrounding matrix, thus affording localised sources of available water-soluble, chemically reactive P in the form of H-phosphite [H2PO3-, Pi(III) as determined by P-31 NMR spectroscopy]. This compound has been shown to have considerable prebiotic chemical potential as a source of condensed P-oxyacids. Here we demonstrate that Pi(III) resulting from the hydrothermal modification of Sikhote- Alin by sub-glacial geothermal fluids can be readily dehydrated into the condensed P-oxyacid pyrophosphite [H2P2O52-, PPi(III)] by dry-heating under mild (85 degrees C) conditions. The potential significance of this latter condensed P-compound for prebiotic chemistry is discussed in the light of its modified chemical properties compared to pyrophosphate [H2P2O72-, PPi(V)].

La technique Storing Matter a pour objectif d’améliorer la sensibilité et la quantification des analyses par SIMS. Elle consiste à découpler la phase de pulvérisation de l’échantillon de la phase d’analyse. Pour cela, la matière pulvérisée par bombardement ionique est déposée en sous-monocouche sur un collecteur optimisé. Le dépôt est ensuite analysé par SIMS. La probabilité d’ionisation de la matière ne dépend plus de son environnement initial (“effet de matrice”), mais de la surface du collecteur. Le choix du collecteur permet un gain de sensibilité et la quantification des concentrations de l’échantillon initial. L’efficacité de la technique dépend du choix du collecteur et d’un facteur de collection ? caractérisant la phase de pulvérisation-dépôt. Dans ce travail, nous avons étudié la pulvérisation et l’émission de la matière sous bombardement ionique pour optimiser ce facteur ?. Nous avons mis au point un dispositif expérimental ainsi qu’un protocole d’analyse par SIMS qui nous a permis d’étudier la distribution angulaire sous un bombardement d’ions Cs+ avec une incidence oblique pour différents paramètres d’impact. L’étude menée sur quatre cibles (Si, Ge, InP et GaAs) a montré que la distribution angulaire est de forme cosn (?-?Max) pour une énergie et un angle d’impact de respectivement 2 à 10 keV et 30° à 60°. L’exposant n est ~2 tandis que la direction d’émission préférentielle ?Max varie de la normale à la surface (0°) jusqu’à un angle d’émission de 35° dans la direction spéculaire au faisceau en fonction de l’énergie d’impact et de l’angle d’incidence. Ces résultats appliqués à Storing Matter ont permis de déterminer la configuration optimum pour une collection maîtrisée en fonction du bombardement / The Storing Matter technique aims at optimising the sensitivity and quantitativeness of SIMS analysis. It consists in decoupling the sputtering of the specimen from the subsequent analysis step. The specimen is sputtered by means of an ion beam. The emitted particles are deposited at a sub-monolayer level on an optimised collector. The deposit is subsequently analysed in a SIMS instrument. The ionisation probability in SIMS does not depend anymore on the initial sample composition (“Matrix effect”), but on the collector surface chemistry. The collector is chosen in order to increase the sensitivity and to quantify the specimen. The efficiency of this new technique depends on the collector choice and on the collection factor ? characterising the sputter-deposition step. In this work, the sputtering and emission processes under ionic bombardment have been studied in order to optimise this factor ?. We developed an experimental set-up and an analysis protocol based on SIMS that allows us to study the angular distribution under Cs+ bombardment with an oblique incidence for different impact parameters. Four targets (Si, Ge, InP and GaAs) were studied. The results show that the angular distribution is shaped as a cosine function cosn (?-?Max) for impact energies between 2 and 10 keV and for incidence angles from 30 to 60°. Under these conditions, the exponent n is ~2 and the preferential direction of emission ?Max varies from the normal to the surface to 35° in the specular direction in function of the impact energy and the incidence angle. The results allowed to find the best settings for the Storing Matter technique to control the sputtered matter collection in function of the bombardment parameters

The purpose of this research is to accurately match the calculation environment, i.e. the treatment planning system (TPS) with the measurement environment (using a 2-D diode array) for lung Stereotactic Body Radiation Therapy (SBRT) patient-specific quality assurance (QA). Furthermore, a new phantom was studied in which the 2-D array and heterogeneities were incorporated into the patient-specific QA process for lung SBRT. Dual source dual energy computerized tomography (DSCT) and single energy computerized tomography (SECT) were used to model phantoms incorporating a 2-D diode array into the TPS. A water-equivalent and a heterogeneous phantom (simulating the thoracic region of a patient) were studied. Monte Carlo and pencil beam dose distributions were compared to the measured distributions. Composite and individual fields were analyzed for normally incident and planned gantry angle deliveries. The distributions were compared using γ-analysis for criteria 3% 3mm, 2% 2mm, and 1% 1mm. The Monte Carlo calculations for the DSCT modeled phantoms (incorporating the array) showed an increase in the passing percentage magnitude for 46.4 % of the fields at 3% 3mm, 85.7% at 2% 2mm, and 92.9% at 1% 1mm. The Monte Carlo calculations gave no agreement for the same γ-analysis criteria using the SECT. Pencil beam calculations resulted in lower passing percentages when the diode array was incorporated in the TPS. The DSCT modeled phantoms (incorporating the array) exhibited decrease in the passing percentage magnitude for 85.7% of the fields at 3% 3mm, 82.1% at 2% 2mm, and 71.4% at 1% 1mm. In SECT modeled phantoms (incorporating the array), a decrease in passing percentage magnitude were found for 92.9% of the fields at 3% 3mm, 89.3% at 2% 2mm, and 82.1% at 1% 1mm. In conclusion, this study demonstrates that including the diode array in the TPS results in increased passing percentages when using a DSCT system with a Monte Carlo algorithm for patient-specific lung SBRT QA. Furthermore, as recommended by task groups (e.g. TG 65, TG 101, TG 244) of the American Association of Physicists in Medicine (AAPM), pencil beam algorithms should be avoided in the presence of heterogeneous materials, including a diode array. / Includes bibliography. / Dissertation (Ph.D.)--Florida Atlantic University, 2016. / FAU Electronic Theses and Dissertations Collection

京都大学 / 0048 / 新制・課程博士 / 博士(農学) / 甲第21821号 / 農博第2334号 / 新制||農||1067(附属図書館) / 学位論文||H31||N5193(農学部図書室) / 京都大学大学院農学研究科応用生命科学専攻 / (主査)教授 小川 順, 教授 植田 充美, 教授 栗原 達夫 / 学位規則第4条第1項該当 / Doctor of Agricultural Science / Kyoto University / DFAM

Monte Carlo (MC) and Pencil Beam (PB) calculations are compared to their measured planar dose distributions using a 2-D diode array for lung Stereotactic Body Radiation Therapy (SBRT). The planar dose distributions were studied for two different phantom types: an in-house heterogeneous phantom and a homogeneous phantom. The motivation is to mimic the human anatomy during a lung SBRT treatment and incorporate heterogeneities into the pre-treatment Quality Assurance process, where measured and calculated planar dose distributions are compared before the radiation treatment. Individual and combined field dosimetry has been performed for both fixed gantry angle (anterior to posterior) and planned gantry angle delivery. A gamma analysis has been performed for all beam arrangements. The measurements were obtained using the 2-D diode array MapCHECK 2™. / Includes bibliography. / Thesis (M.S.)--Florida Atlantic University, 2015. / FAU Electronic Theses and Dissertations Collection