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There has been a huge rise in interest in the design of energy efficient wireless sensor networks (WSN) and body area networks (BAN) with the advent of many new applications over the last few decades. The number of sensor nodes in these applications has also increased tremendously in the order of few hundreds in recent years. A typical sensor node in a WSN consists of circuits like RF transceivers, micro-controllers or DSP, ADCs, sensors, and power supply circuits. The RF transmitter and receiver circuits mainly the frequency synthesizers(synthesis of RF carrier and local oscillator signals in transceivers) consume a significant percentage of its total power due to its high frequency of operation. A charge-pump phase locked loop (CP-PLL) is the most commonly used frequency synthesizer architecture in these applications. The growing demands of WSN applications, such as low power consumption larger number of sensor nodes, single chip solution, and longer duration operation presents several design challenges for these transmitter and frequency synthesizer circuits in these applications and a few are listed below, Low power frequency synthesizer and transmitter designs with better spectral performance is essential for an energy efficient operation of these applications. The spurious tones in the frequency synthesizer output will mix the interference signals from nearby sensor nodes and from other interference sources present nearby ,to degrade the wireless transmitter and receiver performance[1]. With the increased density of sensor nodes (more number of in-band interference sources) and degraded performance of analog circuits in the nano-meter CMOS process technologies, the spur reduction techniques are essential to improve the performance of frequency synthesizers in these applications. A single chip solution of sensor nodes with its analog and digital circuits integrated on the same die is preferred for its low power, low cost, and reduced size implementation. However, the parasitic interactions between these analog and digital sub-systems integrated on a common substrate, degrade the spectral performance of frequency synthesizers in these implementations[2]. Therefore, techniques to improve the mixed signal integration performance of these circuits are in great demand. In this thesis, we present a custom designed energy efficient 2.4 GHz BFSK/ASK transmitter architecture using a low power frequency synthesizer design technique taking advantage of the CMOS technology scaling benefits. Furthermore, a few design guidelinesandsolutionstoimprovethespectralperformanceoffrequency synthesizer circuits and in-turn the performance of transmitters are also presented. The target application being short distance, low power, and battery operated wireless communication applications. The contributions in this thesis are, Spectral performance improvement techniques The CP mismatch current is a dominant source of reference spurs in the nano-meter CMOS PLL implementations due to its worsened channel length modulation effect [3]. In this work, we present a CP mismatch current calibration technique using an adaptive body bias tuning of its PMOS transistors. Chip prototype of 2.4 GHzCP-PLLwith the proposed CP calibration technique was fabricated in UMC 0.13 µm CMOS process. Measurements show a CP mismatch current of less than 0.3 µA(0.55 %) using the proposed calibration technique over the VCO control voltage range 0.3 to 1 V. The closed loop PLL measurements using the proposed technique exhibited a 9dB reduction in the reference spur levels across the PLL output frequency range 2.4 -2.5 GHz. The parasitic interactions between analog and digital circuits through the common substrate severely affects the performance of CP-PLLs. In this work, we experimentally demonstrate the effect of periodic switching noise generated from the digital buffers on the performance of charge-pump PLLs. The sensitivity of PLL performance metrics such as output spur level, phase noise, and output jitter are monitored against the variations in the properties of a noise injector digital signal. Measurements from a 500 MHz CP-PLL shows that the pulsed noise injection with the duty cycle of noise injector signal reduced from 50% to 20%, resulted in a 12.53 dB reduction in its output spur level and a 107 ps reduction in its Pk-Pk deterministic period jitter performance. Low power circuit techniques A low power frequency synthesizer design using a digital frequency multiplication technique is presented. The proposed frequency multiply by 3 digital edge combiner design having a very few logic gates, demonstrated a significant reduction in the power consumption of frequency synthesizer circuits, with an acceptable spectral performance suitable for these relaxed performance applications. A few design guidelines and techniques to further improve its spectral performance are also discussed and validated through simulations. Chip prototypes of 2.4 GHz CP-PLLs with and without digital frequency multiplier circuits are fabricated in UMC 0.13 µm CMOS process. The 2.4 GHz CP-PLL using the proposed digital frequency multiplication technique (10.7 mW) consumed a much reduced power compared to a conventional implementation(20.3 mW). A custom designed, energy efficient 2.4 GHz BFSK/ASK transmitter architecture using the proposed low power frequency synthesizer design technique is presented. The transmitter uses a class-D power amplifier to drive the 50Ω antenna load. Spur reduction techniques in frequency synthesizers are also used to improve the spectral performance of the transmitter. A chip prototype of the proposed transmitter architecture was implemented in UMC0.13 µm CMOS process. The transmitter consume14 mA current from a 1.3V supply voltage and achieve improved energy efficiencies of 0.91 nJ/bit and 6.1 nJ/bit for ASK and BFSK modulations with data rates 20Mb/s & 3Mb/s respectively.

MEMS Sensors are widely used for sensing inertial displacements. The displacements arising out of acceleration /Coriolis effect are typically in the range of 1 nm-1 m. This work investigates the realization of high resolution MEMS inertial sensors using novel displacement sensing mechanisms. Capacitance sensing ASIC is developed as part of conventional electronics interface with MEMS sensor under the conventional CMOS-MEMS integration strategy. The capacitance sense ASIC based on Continuous Time Voltage scheme with coherent and non-coherent demodulation is prototyped on AMS 0.35 m technology. The ASIC was tested to sense C = 3.125 fF over a base of 2 pF using on-chip built-in test capacitors. Dynamic performance of this ASIC was validated by interfacing with a DaCM MEMS accelerometer. 200milli-g of acceleration (equivalent to a C = 2.8 fF) over an input frequency of 20Hz is measurable using the developed ASIC. The observed sensitivity is 90mV/g. The ASIC has several programmable features such as variation in trim capacitance (3.125 fF-12.5 pF), bandwidth selection (500 Hz-20 kHz) and variable gain options (2-100). Capacitance detection, a dominant sensing principle in MEMs sensors, experiences inherent limitation due to the role of parasitics when the displacements of interest are below 5 nm range. The capacitive equivalence ( C) for the range of displacements of the order of 5 nm and below would vary in the range atto-to-zepto farad. Hence there is a need to explore alternative sensing schemes which preferably yield higher sensitivity (than those offered by the conventional integration schemes) and are based on the principle of built-in transduction to help overcome the influence of parasitics on sensitivity. In this regard, 3 non-conventional architectures are explored which fall under the direct integration classification namely: (a) Sub-threshold based sensing (b) Fringe field based sensing and (c) Tunneling current based sensing. a) In Sub-threshold based sensing, FET with a suspended gate is used for displacement sensing. The FET is biased in the sub-threshold region of operation. The exponential modulation of drain current for a change in displacement of 1 nm is evaluated using TCAD, and the in uence of initial air-gap variation on the sensitivity factor ( ID=ID) is brought out. For 1% change in air gap displacement (i.e., TGap/TGap, the gap variation resulting due to the inertial force / mass loading) nearly 1050% change in drain current( ID=ID) is observed (considering initial air gaps of the order 100 nm). This validates the high sensitivity offered by the device in this regime of operation. A comparison of sensitivity estimate using the capacitive equivalence model and TCAD simulated model for different initial air-gaps in a FD-SOI FET is brought out. The influence of FDSOI FET device parameters on sensitivity, namely the variation of TSi, TBox, NA and TGap are explored. CMOS compatibility and fabrication feasibility of this architecture was looked into by resorting to the post processing approach used for validating the sub-threshold bias concept. The IMD layers of the Bulk FETs fabricated through AMS 0.35 technology were etched using BHF and IPA mixture to result in a free standing metal (Al) layers acting as the suspended gate. The performance estimate is carried out considering specific Equivalent Gap Thickness (EGT) of 573 nm and 235 nm, to help overcome the role of coupled electrostatics in influencing the sensitivity metric. The sensitivity observed by biasing this post processed bulk FET in sub-threshold is 114% ( ID=ID change) for a 59% ( d/d change). The equivalent C in this case is 370 aF. b) In Fringe eld based sensing approach, a JunctionLess FET (JLFET) is used as a depletion mode device and an out-of-plane gate displacement would help modulate the device pinch-o voltage due to fringe field coupling. The resulting change in the gate fringe field due to this displacement modulates the drain current of the JunctionLess FET. The displacement induced fringe field change (relative to the FET channel) brings about a distinct shift in the ID-VG characteristics of the JLFET. For displacement d = 2 nm, the JLFET with a channel doping of ND = 8X1018cm 3 and a bias point of VG = -47.7 V, 98% enhancement in sensitivity is observed in 3D TCAD simulations. The equivalent C in this case is 29 zF. The role of ground-planes in the device operation is explored. c) In the tunneling current based sensing approach, the beams fabricated using the SOI-MUMPS process are FIB milled so as to create very ne air gaps of the order of nearly 85 nm. Under high electric fields of the order > 8 MV/cm, the lateral displacement based tunneling sensor offers enhanced change in sensitivity for an induced external force at a fixed DC bias. When integrated as an array with varying electrode overlap, this technique can track displacements over a wide range. With the initial beam overlap as 1.2 m, for a lateral displacement of 1.2 m, a 100% change in sensitivity ( ID=ID) is observed. The effect of fringe field can be completely neglected here unlike its capacitive beam equivalent.