Diese Arbeit präsentiert die Ergebnisse einer Rastertunnelmikroskopiestudie an dem stöchiometrischen Supraleiter Lithium-Eisenarsenid (LiFeAs). Topographie- sowie Spektroskopieuntersuchungen an defektfreien Bereichen der Oberfläche zeigen eine Variation der Atompositionen in Abhängigkeit von der Tunnelspannung. Weiterhin wurde die Temperaturabhängigkeit der supraleitenden Energielücke untersucht. Dabei konnte die Signatur einer bosonischen Mode und damit eine Kopplung von Quasiteilchen beobachtet werden. Neben der Untersuchung defektfreier Oberflächen wurden auch Defekte und deren Einfluss auf die supraleitenden Eigenschaften analysiert. Es wurde dabei festgestellt, dass Defekte die supraleitende Energielücke ortsabhängig verändern. Die Defekte lassen sich aufgrund ihrer Symmetrie einer möglichen Gitterposition zuordnen. Eine detaillierte spektroskopische Untersuchung verschiedener Defekte zeigt deren Einfluss auf die Zustandsdichte der supraleitenden Quasiteilchen. Dabei stellt sich heraus, dass As-Defekte die supraleitende Energielücke erheblich beeinflussen. Fe-Defekte zeigen hingegen nur einen geringen Effekt. Für die Bestimmung der Ginzburg-Landau-Kohärenzlänge wurden Messungen im Magnetfeld durchgeführt. Hierfür wird in dieser Arbeit eine geeignete Näherungsfunktion hergeleitet. Die Näherung der differentiellen Leitfähigkeit bei U=0 V in einem Flussschlauch erlaubt die Bestimmung einer Kohärenzlänge von 3,9 nm. Dies entspricht einem oberen kritischen Feld von 21 Tesla. Neben der Bestimmung der Ginzburg-Landau-Kohärenzlänge wird auch eine Analyse des Flussschlauch-Gitters durchgeführt. Dabei zeigt sich, dass der Flussschlauch-Gitterabstand dem eines tetragonalen Gitters entspricht. Allerdings zeigt sich für Magnetfelder größer als 6 Tesla eine zunehmende Unordnung des Flussschlauch-Gitters, was auf eine stärker werdende Flussschlauch-Flussschlauch-Wechselwirkung hindeutet. / This work presents scanning tunneling microscopy and spectroscopy investigations on the stoichiometric superconductor lithium iron arsenide (LiFeAs). To reveal the electronic properties, measurements on defect-free surfaces as well as near defects have been performed. The former shows a shift of atomic position with respect to the applied bias voltage. Furthermore, temperature dependent spectroscopic measurements indicate the coupling of quasiparticles in the vicinity of the superconducting coherence peaks. LiFeAs surfaces influenced by atomic defects show a spacial variation of the superconducting gap. The defects can be characterized by their symmetry and thus can be assigned to a position in the atomic lattice. Detailed spectroscopic investigations of defects reveal their influence on the quasiparticle density of states. In particular, Fe-defects show a small effect on the superconductivity while As-defects strongly disturb the superconducting gap. Measurements in magnetic field have been performed for the determination of the Ginzburg-Landau coherence length . For this purpose, a suitable fit-function has been developed in this work. This function allows to fit the differential conductance of a magnetic vortex at U=0 V. The fit results in a coherence length of 3,9 nm which corresponds to an upper critical field of 21 Tesla. Besides measurements on a single vortex, investigation on the vortex lattice have been performed. The vortex lattice constant follows thereby the predicted behavior of a trigonal vortex lattice. However, for magnetic fields larger than 6 Tesla an increasing lattice disorder sets in, presumably due to vortex-vortex-interactions.

Since its inception, the field of nonlinear optics has only increased in importance as a result of a growing number of applications. The efficiency of all parametric nonlinear optical processes is limited by challenges associated with phase-matching requirements. To address this constraint, a variety of approaches, such as quasi-phase-matching, birefringent phase matching, and higher-order-mode phase matching have historically been used to phase-match interactions. However, the methods demonstrated to date suffer from the inconvenience of only being phase-matched for one specific arrangement of beams, typically co-propagating along the same axis. This stringency of the phase-matching requirement results in cumbersome optical configurations and large footprints for integrated devices. In this thesis, we show that phase-matching requirements in parametric nonlinear optical processes may be satisfied for all orientations of input and output beams when using zero-index media: a condition of omnidirectional phase matching. To validate this theory, we perform experimental demonstrations of phase matching for five separate FWM beam configurations to confirm this phenomenon. Our measurements constitute the first experimental observation of the simultaneous generation of a forward- and backward-propagating signal with respect to the pump beams in a medium longer than a free-space optical wavelength, allowing us to determine the coherence length of our four-wave-mixing process. Our demonstration includes nonlinear signal generation from spectrally distinct counter-propagating pump and probe beams, as well as the excitation of a parametric process with the probe beam's wave vector orthogonal to the wave vector of the pump beam. By sampling all of these beam configurations, our results explicitly demonstrate that the unique properties of zero-index media relax traditional phase-matching constraints, and provide strong experimental evidence for the existence of omnidirectional phase matching in zero-index media. This property can be exploited to facilitate nonlinear interactions and miniaturize nonlinear devices, and adds to the established exceptional properties of low-index materials.

In astronomy, interferometry by ground-based telescopes offers the greatest angular resolution. However, the Earth´s atmosphere distorts the incident wavefront from a celestial object, leading to blurring and signal loss. It also restricts the transmission of specific wavelengths within the electromagnetic spectrum. Space-based interferometers would mitigate atmospheric obstruction and potentially enable even higher angular resolutions. The main challenge of implementing space-based interferometry is the necessity of matching the light´s optical path differences at the telescopes within the coherence length of the light utilizing physical delay lines. This thesis explores the potential realization of digital delay lines via heterodyne interferometry. The technique generates a heterodyne beat note at the frequency difference between the incident stellar light and a reference laser in the radio regime, permitting digitization of the delay line while preserving the phase information for image reconstruction. The primary objective of the thesis is to advance the field of astronomy by constructing a testbed environment for investigating future space-based heterodyne interferometry in the NIR light range. It requires the achievement of two main tasks. Firstly, a laboratory starlight simulator is developed to simulate a distant star´s wavefront appearance as it reaches telescopes on or around Earth. The consequent starlight simulator contains an optical assembly that manifests a point source in NIR light, aligned with a mirror collimator’s focal point, transforming the wavefront from spherical to planar. Secondly, a fiber optical circuit with interference capability is constructed, consisting of a free-space optical delay line and a polarization-controlled custom-sized fiber. The delay line matches the optical paths within the light's coherence length, while the polarization controller optimizes interference visibility. The completion of the tasks establishes the foundation to investigate space-based heterodyne interferometry in the NIR light with the potential implementation of delay line digitization.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.