The absence of long-range order in glassy chalcogenides provides the convenience of changing the elemental ratios and hence the properties over a wide range. The interesting properties exhibited by chalcogenide glasses make them suitable materials for Phase Change Memories (PCM) and other applications such as infrared optical devices, photo-receptors, sensors, waveguides, etc. One of the most remarkable properties of chalcogenides is their electrical switching behavior. Reversible (threshold type) or irreversible (memory type) switching from a high resistance OFF state to a low resistance ON state in glassy chalcogenides occurs at a critical voltage called the threshold/switching voltage (VT). Investigations on the switching behavior and its composition dependence throw light on the local structural effects of amorphous chalcogenide semiconductors and also help us in identifying suitable samples for PCM applications. Thermal analysis by Differential Scanning Calorimetry (DSC) has been extensively used in glass science, particularly for measurements of thermal parameters such as enthalpy of relaxation, specific heat change, etc., near glass transition. Quite recently, the conventional DSC has been sophisticated by employing a composite temperature profile for heating, resulting in the Temperature Modulated DSC (TMDSC) or Alternating DSC (ADSC). Measurements made using ADSC reveal thermal details with enhanced accuracy and resolution, and this has lead to a better understanding of the nature of glass transition. The thermal parameters obtained using DSC/ADSC are also vital for understanding the electrical switching behavior of glassy chalcogenides. The motivation of this thesis was twofold: The first was to develop a novel, high voltage programmable power supply for electrical switching analysis of samples exhibiting high VT, and second to investigate the thermal and electrical switching behavior of certain Se-Te based glasses with Ge and Sb additives. The thesis contains seven chapters: Chapter 1: This chapter provides an overview of amorphous semiconductors (a-SC) with an emphasis on preparation and properties of glassy chalcogenides. The various structural models and topological thresholds of a-SC are discussed with relations to the glass forming ability of materials. The electronic band models and defect states are also dealt with. The essentials of electrical switching behavior of chalcogenides are discussed suggesting the electronic nature of switching and the role of thermal properties on switching. Chapter 2: The second chapter essentially deals with theory and practice of the experimental techniques adopted in the thesis work. The details of the melt-quenching method of synthesizing glassy samples are provided. Considering the importance, the theory of thermal analysis by DSC & ADSC, are discussed in detail, highlighting the advantages of the latter method adopted in the thesis work. The instrumentation and electronics, developed and used for electrical switching analysis are also introduced at a block diagram level. Finally, the methods used for structural analysis are briefed. Chapter 3: This chapter is dedicated to the design and development details of the programmable High Voltage dc Power Supply (HVPS: 1750 V, 45 mA) undertaken in the thesis work. The guidelines used for power supply topology selection, the specifications and block diagram of the HVPS are provided in that sequence. The operation of the HVPS is discussed using the circuit diagram approach. The details of software control are also given. The performance validations of the HVPS, undertaken through voltage & current regulation tests, step & frequency response tests are discussed. Finally, the sample-test results on the electrical switching behavior of representative Al20As16Te64 and Ge25Te65Se10 samples, obtained using both the current & voltage sweep options of the HVPS developed are illustrated. Chapter 4: Results of the thermally induced transitions governed by structural changes which are driven by network connectivity in the GexSe35-xTe65 (17 ≤ x ≤ 25) glasses, as revealed by ADSC experiments, are discussed in this chapter. It is found that the GexSe35-xTe65 glasses with x ≤ 20 exhibit two crystallization exotherms (Tc1 & Tc2), whereas those with x ≥ 20.5, show a single crystallization reaction upon heating (Tc). The glass transition temperature of GexSe35-xTe65 glasses is found to show a linear, but not-steep increase, indicating a progressive and not an appreciable build-up in network connectivity with Ge addition. The exothermic reaction at Tc1 has been found to correspond to the partial crystallization of the glass into hexagonal Te and the reaction at Tc2 is associated with the additional crystallization of rhombohedral Ge-Te phase. It is also found that the first crystallization temperature Tc1 of GexSe35-xTe65 glasses of lower Ge concentrations (with x ≤ 20), increases progressively with Ge content and eventually merges with Tc2 at x = 20.5 (<r> = 2.41); this behavior has been understood on the basis of the reduction in Te-Te bonds of lower energy and an increase in Ge-Te bonds of higher energy, with increasing Ge content. Chapter 5: This chapter deals with the electrical switching studies on GexSe35-xTe65 (17 ≤ x ≤ 25) glasses, with an emphasis on the role of network connectivity/rigidity on the switching behavior. It is found that the switching voltage (VT) increases with Ge content, exhibiting a sudden jump at x=20, the Rigidity Percolation Threshold (RPT) of the system. In addition, the switching behavior changes from memory to threshold type at the RPT and the threshold switching is found to be repetitive for more than 1500 cycles. Chapter 6: In this chapter, the results of thermal analysis (by ADSC) and electrical switching investigations on SbxSe55-xTe45 (2 ≤ x ≤ 9) are discussed. It is found that the addition of trivalent Sb contributes very meagerly to network growth but directly affects the structural relaxation effects at Tg. Further, SbxSe55-xTe45 glasses exhibit memory type electrical switching, which is understood on the basis of poor thermal stability of the samples. The metallicity factor is observed to outweigh the network factor in the composition dependence of VT of SbxSe55-xTe45 glasses. Chapter 7: The chapter 7 summarizes the results obtained in the thesis work and provides the scope for future work. The references are cited in the text along with the first author’s name and year of publication, and are listed at the end of each chapter in alphabetical order.

La thèse de Giovanni BETTI BENEVENTI portes sur la caractérisation électrique et la modélisationphysique de dispositifs de mémoire non-volatile à changement de phase. Cette thèse a été effectuée dans le cadre d’une cotutelle avec l’Università degli Studi di Modena e Reggio Emilia (Italie).Le manuscrit en anglais comporte quatre chapitres précédés d’une introduction et terminés par uneconclusion générale.Le premier chapitre présent un résumé concernant l’état de l’art des mémoires a changement de phase. Le deuxième chapitre est consacré aux résultats de caractérisation matériau et électrique obtenus sur déposition blanket et dispositifs de mémoire à changement de phase (PCM) basées sur le nouveau matériau GeTe dopé carbone (GeTeC).Le chapitre trois s’intéresse à l’implémentation et à la caractérisation expérimentale d’un setup demesure de bruit a basse fréquence sur dispositifs électroniques a deux terminaux développé auxlaboratoires de l’Università degli Studi di Modena e Reggio Emilia en Italie.Enfin, dans le dernier chapitre est présentée une analyse rigoureuse de l’effet d’auto-chauffage Joulesur la caractéristique I-V des mémoires a changement de phase intégrant le matériau dans la phase polycristalline. / Within this Ph.D. thesis work new topics in the field of Non-Volatile Memories technologies have been investigated, with special emphasis on the study of novel materials to be integrated in Phase-Change Memory (PCM) devices, namely:(a) Investigation of new phase-change materialsWe have fabricated PCM devices integrating a novel chalcogenide material: Carbon-doped GeTe (or simply, GeTeC). We have shown that C doping leads to very good data retention performances: PCM cells integrating GeTeC10% can guarantee a 10 years fail temperature of about 127°C, compared to the 85°C of GST. Furthermore, C doping reduces also fail time dispersion. Then our analysis has pointed out the reduction of both RESET current and power for increasing carbon content. In particular, GeTeC10% PCM devices yield about a 30% of RESET current reduction in comparison to GST and GeTe ones, corresponding to about 50% of RESET energy decrease.Then, resistance window and programming time of GeTeC devices are comparable to those of GST.(b) Advanced electrical characterization techniquesWe have implemented, characterized and modeled a measurement setup for low-frequency noise characterization on two-terminal semiconductor devices.(c) Modeling for comprehension of physical phenomenaWe have studied the impact of Self-induced Joule-Heating (SJH) effect on the I-V characteristics of fcc polycrystalline-GST-based PCM cells in the memory readout region. The investigation has been carried out by means of electrical characterization and electro-thermal simulations.

Fe chalcogenides : The discovery of superconductivity in Fe based compounds trig- gered an intense research activity in this field with significant importance given to material synthesis. As a result, numerous materials falling into four major classes and sharing similarities in physical properties were synthesized and investigated. In spite of subtle differences, all of them share many common features like crystal symmetry, magnetic ground state, close resemblance in phase diagram etc. Fe super- conductors are broadly classified into Fe pnictides (with Fe − pnictogen layer) and Fe chalcogenides (with Fe − chalcogen layer) in which the binary Fe chalcogenides possess the simplest crystal structure. The distinct magnetic and superconducting properties make them interesting candidates for research. Detailed study on such systems demand high quality single crystals. This thesis discusses single crystal growth and properties of Fe1+yTe1−xSex. Struc- tural, magnetic, superconducting and thermal properties of pristine and substituted compounds are explored. A characteristic feature associated with binary chalco- genides is the presence of excess Fe in the interstitial sites represented by y in the chemical formula. By fine tuning the composition, the effect of interstitial Fe on various physical properties can be analyzed. The current work deals with the influence of interstitial excess Fe on the structural, magnetic and superconducting properties of the parent compound Fe1+yTe and Se substituted Fe1+yTe1−xSex. The results are organized into eight chapters; an outline of each chapter is given below. Chapter 1 gives an introduction to the broad field of Fe superconductors. A de- tailed literature review providing comparison of Fe pnictides with chalcogenides is included. The background of the current work is discussed with reference to the im- portant aspects of crystal structure and its relation to the ordered ground states. An overview of the important theories on magnetic ordering and superconducting pair- ing is provided. In the later part, a generic phase diagram along with the individual phase diagrams of important systems are discussed. This is followed by a discus- sion of the characteristic properties of iron chalcogenides and different methods of bulk synthesis. The chapter is concluded with a note on the motivation behind the present work. Chapter 2 discusses the crystal growth techniques and experimental methods used in the present work. The basic working principles are briefly explained. Chapter 3 provides a detailed discussion of the single crystal growth procedure, its customization and basic characterization. Single crystals of all compositions un- der discussion are grown by a modified horizontal Bridgman method. Material preparation, growth parameters and overall temperature profile of crystal growth process are described. Single crystalline nature of the as-grown crystals is con- firmed with Laue scattering technique. All crystals show tetragonal symmetry at room temperature. The approximate crystal orientation is deduced by indexing the X-ray diffraction pattern of the cleaved crystals. The diffraction patterns exhibit a set of (00l) peaks. A detailed composition analysis is performed on the samples. The sample properties are very sensitive to composition and careful estimation is per- formed by conducting repeated measurements at multiple points on the samples under study. Chapter 4 deals with superconducting and magnetic properties of Fe1+yTe0.5Se0.5. Single crystals of two different Fe concentration, y=0.04 and 0.09 are grown in which the concentration of Se and Te are maintained close to 0.5. Among binary Fe chalcogenides, half substituted iron telluride shows the highest TC (15 K) at ambient pressure. Accordingly, this composition is chosen to evaluate the role of Fe concentration in modulating the superconducting behavior. Two different batches of both the samples are grown, one set containing small amounts of impurity phases and the other, representing a pure primary phase. Resistivity measurements performed on both compositions, y=0.04 and 0.09, show onset of superconductivity near 15 K. In the normal state above TC, the temperature derivative of resistivity dρ/dT changes from positive to negative as the excess Fe concentration rises. At higher Fe concentrations, a log 1/T divergence is discernible in the normal state. The contribution of interstitial Fe to superconductivity has been analyzed using magnetization measurement techniques. An increase in the width of superconducting transition is seen in all measurements as the Fe content increases. The superconducting volume fraction estimated from susceptibility data demonstrates that high concentration of Fe is not favorable to superconductivity. The upper and lower critical field are esti- mated from electric resistivity data (in applied magnetic field) and magnetization isotherms respectively. Comparison of the lower critical field between two compo- sitions strengthens the argument that higher excess Fe leads to suppression of super- conductivity. The second set of crystals with impurity phases reveals an anomalous magnetization peak near 125 K. The results from resistivity, DC magnetization and ac susceptibility are compared. Chapter 5 addresses the influence of excess Fe on the ordered ground state. The antiferromagnetic parent compound, Fe1+yTe single crystals, are also grown using the same procedure. It is proposed that excess Fe occupying the interstitial sites possess local moments which could interact with the magnetic phases. In an at- tempt to understand their magnetic properties in detail, single crystals are grown with y=0.06, 0.09, 0.11, 0.12, 0.13 and 0.15. Fe1+yTe undergoes magnetostructural transition at TN=67 K. As the concentration of Fe varies from 0.06 to 0.13, a marked suppression of TN occurs from 67 K to 56 K. Moreover, a single first order transi- tion is seen to split into two at the critical concentration, y=0.12. The derivative plot of magnetization and specific heat data clearly illustrate two well-separated peaks. The two transitions are denoted as TN=57 K and TS=46 K. TN here is identified as a second order transition and TS as a first order transition. The second order transi- tion is evident from the λ-like nature of the peak in the specific heat measurement. The first order transition is associated with a large thermal hysteresis in the heat- ing and cooling cycle. Raw data from the heat capacity calorimeter gives a clear hint towards the first order nature of TS. As the composition of Fe rises further, the multiple transitions subside and disappear. For higher concentration, y=0.15, a sin- gle continuous phase transition is observed. Impurity free, pure phase is noticed in most of the samples as evident in powder X-ray diffraction and bulk magneti- zation measurements. The thermal data of various compositions are analyzed and compared. Electrical resistivity data clearly reveals the shift in phase transition and the presence of multiple transitions. Unlike Fe1+yTe1−xSex, all compositions here display similar behavior above TN, irrespective of the concentration of excess Fe. Chapter 6 devotes special emphasis to the evolution of structural and magnetic properties of the critical composition, Fe1.12Te where multiple transitions are ob- served. The low temperature structure of the crystal is studied in detail using syn- chrotron powder X-ray diffraction. The data in the vicinity of the two transitions, TN and TS are carefully analyzed. The room temperature crystal structure belongs to tetragonal symmetry with P4/nmm space group, where it is paramagnetic. As the sample is cooled to just below TN, a magnetostructural transition occurs from tetragonal to orthorhombic space group Pmmn. Below TN, the XRD pattern of the tetragonal (200) peak splits into (200) and (020) representing an orthorhombic distortion. The second transition is observed at TS where the orthorhombic struc- ture undergoes a monoclinic distortion, to P21/m. Below TS, a mixed phase of or thorhombic and monoclinic structures are present. The powder diffraction studies are supplemented with thermodynamic measurements. From specific heat analy- sis, the different contributions and the change in entropy across the transitions are estimated. Linear thermal expansion study has confirmed the two structural transi- tions. The changes occurring in lattice parameters, bond distances, bond angles and unit cell volume as a function of temperature are calculated using powder pattern refinement. Synchrotron data, linear thermal expansion and thermodynamic mea- surement results all point to strong magnetostructural coupling in this material. A temperature-composition phase diagram is formulated using results obtained from different Fe compositions. Transition temperature is plotted as a function of excess Fe content, highlighting its role in determining the structural and magnetic phases in Fe1+yTe. Chapter 7 deals with the magnetic and superconducting properties of Se substi- tuted Fe1+yTe1−xSex. Single crystals are grown by carefully varying the concen- tration of Se from x=0.02 to 0.25 while keeping the nominal composition of excess Fe more or less same. In this work, focus is given to Fe-rich, selenium substituted compositions. The intention is to explore how Se substitution affects the multiple transitions observed in Fe1.12Te. At 2% Se substitution, the split peaks are evident with a slight shift in temperature. The temperature interval between the two tran- sitions decreases in comparison to the pristine compound. For further increases in Se concentration, instead of two well separated peaks, a weak broad hump is ob- served. For compositions with x >0.10, long range magnetic ordering is suppressed. As x increases above 0.15 the electrical resistivity drops indicating the onset of su- perconductivity. However, in the composition range 0.15 ≤ x ≤ 0.25, neither long range magnetic order nor bulk superconductivity is present. Alternately, weak magnetic transitions above the superconducting transition are visible. The transport and magnetic properties are similar to that observed in Fe1.09Te0.5Se0.5. By tuning the Se composition in Fe-rich samples, the magnetic and structural transitions, originally seen in the parent compound are suppressed. The emergence of superconductivity is also discussed. The last section of the chapter provides the modified phase diagram as a function of Se concentration, combining all compositions discussed in the thesis. This gives a detailed description of Fe chalcogenides in the composition range, x=0 to 0.5 with special emphasis on Fe rich samples. The different regions in the phases diagram describe the peculiar properties of Fe chalcogenides. Chapter 8 concludes the thesis with general conclusions pertaining to various observations made in the different chapters. Prospects for future work are briefly outlined.

<p>  </p> <p>Magnetism plays a vital role in the technologies of today, and materials used for magnetic applications largely consist of solid state phases. Intermetallic chalcogenides are one such material which have exhibited a full range of properties useful for a variety of applications requiring soft magnets, superconductors, magnetocalorics, and even rarer magnetic phenomenon such as 1D Heisenburg magnetic chains. Solid state chemists continue to develop new synthesis methods for chalcogenides as they produce both new phases and modifications of existing phases, usually with the express intent of improving their physical and chemical properties. Low dimensional chalcogenides often have predictable structure-property relationships which when understood aids in these efforts of optimizing existing materials.</p> <p>In this work, we have synthesized novel, low-dimensional Tl1-xAxFe3Te3 (A = K, Na)-based magnetocalorics for magnetic refrigeration technologies utilizing a variety of synthetic methods. Doping of alkali metals into the thallium site simultaneously reduces the toxicity and cost of the material, and also modifies their crystal structures leading to changes in their magnetic properties including ordering temperature, magnetic anisotropy, magnetic hysteresis, coercivity, and magnetic entropies. Most notably, the magnetic ordering temperature has been boosted from 220 K of the prior known TlFe3Te3 phase up to 233 K in the new Tl0.68Na0.32Fe2.76Te3.32 phase, further towards room temperature which is required for the commercialization of magnetic refrigerants for home appliances. There exist strong magnetostructural correlations for most of the alterations in the magnetic properties, and relationships have been modelled where trends exist to match the magnetism to the changes in the unit cell of the structure.</p> <p>New synthetic methods were also developed for the ternary TBi4S7 (T = transition metal) phase which exhibits a pseudo-1D structure of Heisenberg antiferromagnetic chains. These synthetic techniques resulted in more consistent high purity of phases than methods reported previously in literature. Attempts at synthesizing new phases were made, and crystallographic and composition analysis methods suggested the synthesis of a new Mn1-xCoxBi4S7 phase, though magnetic impurities prevented characterization of this new material’s magnetic properties. </p>

<p dir="ltr">For reliable, facile, and user-friendly, solution-based synthesis of materials, the colloidal nanocrystal route has proven to be the method of choice for so many. The tunability that this process renders its users---from choice of precursors, solvent systems, and reaction conditions including temperature, pressure, and precursor addition order---is truly second to none. In their simplest form, these nanomaterials are usually comprised of an inorganic core of the desired material and an outer layer of surface-stabilizing molecules called ligands. These ligands provide colloidal stability and allow for the solution-processing of these materials for downstream usage in devices such as light-emitting diodes and photovoltaics, for example. In this thesis, the study and use of colloidal nanomaterials of Cu(In,Ga)(S,Se)₂ (CIGSSe), IIA-IVB-S₃ (including BaZrS₃ and SrZrS₃), alkaline earth polysulfides (IIAS_x; IIA = Sr, Ba; x = 2, 3), and other materials like Cu₂GeS₃ and Cu₂BaSnS₄, for studies into the formation, colloidal stability, and fabrication into solar cells was performed.</p><p dir="ltr">More specifically, an experimental protocol was developed to fabricate high-quality CIGSSe nanoparticles with carbonaceous residues that are substantially reduced from traditional pathways. Traditional methods for synthesizing colloidal CIGS NPs often utilize heavy, long-chain organic species to serve as surface ligands which, during annealing in a Se/Ar atmosphere, leave behind an undesirable carbonaceous residue in the film. In an effort to minimize these residues, N-methyl-2-pyrrolidone (NMP) was used as an alternative surface ligand. Through the use of the NMP-based synthesis, a substantial reduction in the number of carbonaceous residues was observed in selenized films. Additionally, the fine-grain layer at the bottom of the film, a common observation of solution-processed films from organic media, was observed to exhibit a larger average grain size and increased chalcopyrite character over those of traditionally prepared films, presumably as a result of the reduced carbon content, allowing for superior growth. As a result, a gallium-free CuIn(S,Se)₂ device was shown to achieve power-conversion efficiencies of over 11% as well as possessing exceptional carrier generation capabilities with a short-circuit current density (J_SC) of 41.6 mA/cm², which is among the highest for the CIGSSe family of devices fabricated from solution-processed methods. It was shown that pre-selenized films of sulfide nanoparticles instead of selenide nanoparticles performed better as solar cells. While the exact mechanism is still under debate, it appears that the growth phase during selenization, which varies depending on the chalcogen present in the starting material plays an important role.</p><p dir="ltr">The IIA-IVB-S₃ system is just beginning to emerge as a material system shown to be capable of solution-based synthesis methods. This is primarily due to the extremely high oxophilicity of the IVB elements, Ti, Zr, and Hf, necessitating that extreme care and judicial use of inert environments be used to synthesize these materials via solution-based methods. In the IIA-IVB-S₃ system exists some of the chalcogenide perovskites, including BaZrS₃, which are expected to have similar electronic properties to the well-known, high-performing halide perovskites, albeit much more stable, making them attractive prospects as novel semiconductor materials for optoelectronic applications. This work builds upon recent studies to show a general synthesis protocol, involving the use of carbon disulfide insertion chemistry to generate highly reactive precursors, that can be used towards the colloidal synthesis of numerous nanomaterials in the IIA-IVB-S₃ system, including BaTiS₃, BaZrS₃, BaHfS₃, α-SrZrS₃ and α-SrHfS₃. Additionally, we establish a method to reliably control the formation of the BaZrS₃ perovskite, a complication seen in previous literature where BaZrS₃ appears to exist as two different phases when synthesized via colloidal methods. The utility of these nanomaterials is also assessed via the measurement of their absorption properties and in the form of highly stable colloidal inks for the fabrication of homogenous, crack-free thin films of BaZrS₃. In addition to the chalcogenide perovskites, the IIA-S system was also explored to better understand the solution-based formation of these materials and how the control of IIA polysulfides can be achieved. We show that the synthesis of these materials is strongly correlated to the reaction temperature and that the length of the S_n^2- oligomer chain is the dependent variable. We also report on the synthesis of a previously unreported polymorph of SrS₂ which appears to take on the <i>C2/c</i> space group, the same as BaS₂.</p><p dir="ltr">Finally, some discussion is also provided on the use of transmission electron microscopy (TEM) to analyze the crystal structure of materials. Some tips and techniques used throughout this thesis are summarized in this section.</p>

Chalcogenide glasses have attracted considerable attention due to their infrared transparency, low phonon energy, and high non linear optical properties. They have been explored as promising candidate for optical memories, gratings, switching devices etc. Because of their low phonon energy and high refractive indices, now a days these are used for high efficiency fibre amplifiers. Nevertheless, the availability of amorphous semiconductors in the form of high quality multilayers provides potential applications in the field of micro and optoelectronics. Among amorphous multilayers, chalcogenide multilayers are attractive because of the prominent photoinduced effects. Studies in chalcogenide amorphous multilayer have been directed towards two phenomena. One is photoinduced interdiffusion in short period multilayer systems which finds potential applications in holographic recording and fabrication of phase gratings . The other is photo darkening or photobleaching which is also known in thick films. These multilayers exhibit prominent photoinduced effects, similar to those exhibited by uniform thin films. In spite of its practical usefulness, the mechanism of photoinduced interdiffusion is not properly understood. Since most structural transformations are related to atomic diffusion, understanding of the structural transformation must be based on the diffusion process. The main aim of this thesis is to study the photoinduced diffusion in Sb/As2S3 multilayered films and (As2S3)1-xSbx thin films. In literature, there are reports about the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films, but the mechanisms of photoinduced interdiffusion of these elements are not very clear. Raman scattering and infrared spectroscopy techniques have been used to study the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films by Malyovanik et al. (M. Malyovanik, M. Shiplyak, V. Cheresnya, T. Remeta, S. Ivan, and A. Kikineshi, J. Optoelectron. Adv. Mater. 5, 397 (2003). But many questions remain unanswered. The characteristic spectra of components in the multilayer and those of the diffused layer were rather similar. In the present thesis, photoinduced interdiffusion in Sb/As2S3 multilayered samples are studied by Fourier Transform Infrared spectroscopy (FTIR) at room and low temperature and X-ray photoelectron spectroscopy (XPS). The photoinduced effects in (As2S3)1-xSbx thin films are studied by FTIR, XPS and Raman Spectroscopy. The detailed information about the distribution of electronic states in the absorption edge, localized states and the new bonds formed between the components due to photoinduced interdiffusion elucidated from the above studies will give more insight into the mechanism and kinetics of photoinduced interdiffusion. The thesis consists of seven chapters. References are given at the end of each chapter.

The Phase Change Memories (PCM) based on chalcogenide glasses are being considered recently as a possible replacement for conventional Non Volatile Random Access Memories (NVRAM). The main advantages of chalcogenide phase change memories are their direct write/overwrite capability, lower voltages of operation, large write/erase cycles, easiness to integrate with logic, etc. The phase change random access memories work on the principle of memory switching exhibited by chalcogenide glasses during which a local structural change (between amorphous and crystalline states) occurs due to an applied electric field. The development of newer phase change materials for NVRAM applications is based on synthesizing newer glass compositions and investigating their electrical switching characteristics by applying current/voltage pulses of different waveforms. The thermal studies on chalcogenide glasses which provide information about thermal stability, glass forming ability, etc., are also important while selecting a chalcogenide glass for PCM applications. The present thesis work deals with electrical switching and thermal studies on certain silicon based ternary telluride glasses (As-Te-Si, Ge-Te-Si and Al-Te-Si). The effect of network topological thresholds on the composition dependence of switching voltages and thermal parameters such as glass transition temperature, specific heat capacity, non-reversing enthalpy, etc., of these glasses has been investigated. The first chapter of the thesis provides an introduction to various properties of chalcogenide glasses, including their applications in phase change memories. The fundamental aspects of amorphous solids such as glass formation, glass transition, etc., are presented. Further, the concepts of rigidity percolation and self organization in glassy networks and the influence of local structural effects on the properties of glassy chalcogenides are discussed. Also, a brief history of evolution of phase change memories is presented. The second chapter deals with the experimental techniques employed in this thesis work; for sample preparation and for electrical switching studies, Alternating Differential Scanning Calorimetry (ADSC), Raman spectroscopy, NMR spectroscopy, etc. The third chapter discusses the electrical switching and thermal studies on As30Te70-xSix (2 ≤ x ≤ 22) and As40Te60-xSix (2 ≤ x ≤ 17) glasses. The composition dependence of electrical switching voltage (VT) and thermal parameters such as glass transition temperature (Tg), crystallization temperature (Tc), thermal stability (Tc-Tg), etc., reveals the occurrence of extended rigidity percolation and chemical thresholds in As30Te70-xSix and As40Te60-xSix glasses. Chapter 4 presents the electrical switching and thermal studies on Ge15Te85-xSix glasses (2 ≤ x ≤ 12). These glasses have been found to exhibit memory type electrical switching. While Ge15Te85-xSix glasses with x ≤ 5 exhibit a normal electrical switching, an unstable behavior is seen in the I-V characteristics of Ge15Te85-xSix glasses with x > 5 during the transition to ON state. Further, the switching voltage (VT) and initial resistance (R) are found to increase with addition of Si, exhibiting a change in slope at the rigidity percolation threshold of the Ge15Te85-xSix system. The ADSC studies on these glasses indicate the presence of an extended stiffness transition and a thermally reversing window in Ge15Te85-xSix in the composition range of 2 ≤ x ≤ 6. The fifth chapter deals with electrical switching investigations, thermal and structural studies on Al15Te85-xSix glasses (2 ≤ x ≤ 12). These glasses have been found to exhibit two crystallization reactions (Tc1 and Tc2) for compositions with x < 8 and a single stage crystallization is seen for compositions above x = 8. Also, a trough is seen in the composition dependence of non-reversing enthalpy (ΔHNR), based on which it is proposed that there is a thermally reversing window in Al15Te85-xSix glasses in the composition range 4 ≤ x ≤ 8. Further, Al15Te85-xSix glasses are found to exhibit a threshold type electrical switching at ON state currents less than 2 mA. The start and the end of the thermally reversing window seen in the thermal studies are exemplified by a kink and saturation in the composition dependence of switching voltages respectively. 27Al Solid State NMR measurements reveal that in Al15Te85-xSix glasses, Al atoms reside in 4-fold as well as 6-fold coordinated environments. Unlike in Al-As-Te glasses, there is no correlation seen between the composition dependence of the fraction of 4-fold and 6-fold coordinated aluminum atoms and the switching behavior of Al-Te-Si samples. Chapter 6 provides a comparison of the properties of the three glassy systems studied (As-Te-Si, Ge-Te-Si and Al-Te-Si), made to identify the system better suited for phase change memory applications. It is found that the Ge-Te-Si glassy system has better electrical/thermal properties for phase change memory applications. The seventh chapter describes easily reversible SET-RESET processes in Ge15Te83Si2 glass which is a promising candidate for phase change memory applications. This sample exhibits memory switching at a comparatively low threshold electric field (Eth) of 7.3 kV/cm. The SET and RESET processes have been achieved with 1 mA triangular current pulse for the SET process and 1 mA rectangle pulse (of 10 msec width) for RESET operation respectively. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse. About 6.5x104 SET-RESET cycles have been achieved without any damage to the device. In chapter 8, results of in-situ Raman scattering studies on the structural changes occurring during the SET and RESET processes in Ge15Te83Si2 sample, are presented. It is found that the degree of disorder in the glass is reduced from OFF to SET state. The local structure of the sample under RESET condition is similar to that in the OFF state. The Raman results are found to be consistent with the switching results which indicate that the Ge15Te83Si2 glass can be SET and RESET easily. Further, Electron Microscopic studies on switched samples indicate the formation of nanometer sized particles of cSiTe2. A summary of the results obtained and the scope for future work are included in the chapter 9 of the thesis.