Due to the important role of advertising in marketing practice, its effects have been the research focus since 1920. Among relevant research fields, the issue that has been paid close attention in the economic field is its impact on consumer welfare. Issues focused in the marketing field are its impacts on consumer perception, feelings, attitudes, behaviors, and competitive interaction among firms. However, in these two fields the integrated channel is the focused scenario where the advertising works in vast majority of literatures. Only very few of them investigate effects of advertising in other channel structure context. However, in practice indirect channels are very common. There may be interactions between advertising and channel structure due to the existence of the independent retailer and the specific degree of competition. Since advertising is an important strategic instrument, it deserves to pay more efforts to relate the advertising and channel structure. This dissertation use game-theoretical approach to target three issues relating the advertising and channel structure. The first issue focuses on discussing the differential of choices between informative and persuasive advertising across three channel structure contexts for two competing manufacturers. This dissertation argues that the use of advertising strategy crucially depends on the channel structure. Specifically, it shows that when manufacturers delegate the sales responsibility to dedicated retailers, informative advertising may yield a higher profit for the manufacturers due to its pro-competitive nature. On the contrary, persuasive advertising should be used more extensively when either the manufacturers sell directly to the end consumers or sell through a common retailer. This therefore provides a theoretical foundation for why both advertising strategies can emerge as optimal responses from the manufacturers' viewpoints and subsequently provides handy guidelines for when these advertising strategies should be used in various scenarios. The second issue is about the choice between direct and indirect channels. The introduction of independent retailers has long been recognized as a buffer that alleviates the price competition between channels. If the sales responsibility is delegated to the retailers, the retail prices are driven upwards, thereby allowing the manufacturers to avoid the head-to-head competition. In this dissertation, we argue that this effect may be counter-balanced if the manufacturers are privileged with sufficiently large loyal segments. It shows that, selling directly to the consumers (through the direct channel) may be more beneficial for the manufacturers than delegation with the presence of competition, because the low prices due to the intense competition may help the manufacturers to extract more revenue from loyal consumers. Furthermore, if the manufacturers compete along dimensions that differ from prices, they may be further in favor of the direct channel and less concerned about price competition. In particular, this dissertation shows that if the manufacturers also compete on their advertising strategies, delegating to the retailers may force them to invest on the wasteful advertising, which could be prevented had the manufacturers sold the products themselves. The third issue discusses the combativeness of the persuasive advertising in the common retailer channel. The existing marketing literature suggests that persuasive advertising elicits counteractions from competing manufacturers and consequently leads to wasteful cancellation of the advertising effects. However, recent empirical studies document a surprisingly negative result against this conventional wisdom. To provide a theoretical ground for this empirical puzzle, we propose a novel way to model the advertising effect on the consumers' preference that incorporates two critical driving forces: on one hand, advertising shifts the consumers' preferences towards the advertised product (the "absolute effect"); on the other hand, it also makes the rival product a less desirable substitute from the consumers' viewpoints (the "relative effect"). Through our alternative interpretation of persuasive advertising, we show that channel conflict can be alleviated if a manufacturer adopts persuasive advertising that wisely "targets" appropriate consumers. In stark contrast with the established work, this advertising strategy may give rise to profit increases for every channel member, including the rival manufacturer and the retailer that were previously believed to always counteract/ resist to such persuasive advertising. We further identify the detailed operating regimes within which such a manufacturer-initiated persuasive advertising strategy is no more harmful for other channel members.

Thesis (Ph.D.)--Indiana University, 2010. / Title from screen (viewed on April 1, 2010). Department of Pharmacology and Toxicology, Indiana University-Purdue University Indianapolis (IUPUI). Advisor(s): Theodore R. Cummins, Grant D. Nicol, Gerry S. Oxford, Andy Hudmon, John H. Schild. Includes vitae. Includes bibliographical references (leaves 232-266).

Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. Si1-xGex ρMOSFETs with an Al2O3/HfAlOx/Al2O3nano-laminate gate dielectric prepared by means ofAtomic Layer Deposition (ALD) exhibit a great-than-30% increasein current drive and peak transconductance compared toreference Si ρMOSFETs with the same gate dielectric. Apoor high-κ/Si interface leading to carrier mobilitydegradation has often been reported in the literature, but thisdoes not seem to be the case for our Si ρMOSFETs whoseeffective mobility coincides with the universal hole mobilitycurve for Si. For the Si1-xGexρMOSFETs, however, a high density ofinterface states giving riseto reduced carrier mobility isobserved. A method to extract the correct mobility in thepresence of high-density traps is presented. Coulomb scatteringfrom the charged traps or trapped charges at the interface isfound to play a dominant role in the observed mobilitydegradation in the Si1-xGexρMOSFETs. Studying contacts with metal silicides constitutes a majorpart of this thesis. With the conventional device fabrication,the Si1-xGexincorporated for channel applications inevitablyextends to the source-drain areas. Measurement and modelingshow that the presence of Ge in the source/drain areaspositively affects the contact resistivity in such a way thatit is decreased by an order of magnitude for the contact of TiWto p-type Si1-xGex/Si when the Ge content is increased from 0 to 30at. %. Modeling and extraction of contact resistivity are firstcarried out for the traditional TiSi2-Si contact but with an emphasis on the influenceof a Nb interlayer for the silicide formation. Atwo-dimensional numerical model is employed to account foreffects due to current crowding. For more advanced contacts toultra-shallow junctions, Ni-based metallization scheme is used.NiSi1-xGex is found to form on selectively grown p-typeSi1-xGexused as low-resistivity source/drain. Since theformed NiSi1-xGex with a specific resistivity of 20 mWcmreplaces a significant fraction of the shallow junction, athree-dimensional numerical model is employed in order to takethe complex interface geometry and morphology into account. Thelowest contact resistivity obtained for our NiSi1-xGex/p-type Si1-xGexcontacts is 5´10-8Ωcm2, which satisfies the requirement for the 45-nmtechnology node in 2010. When the Si1-xGexchannel is incorporated in a MOSFET, it usuallyforms a retrograde channel with an undoped surface region on amoderately doped substrate. Charge sheet models are used tostudy the effects of a Si retrograde channel on surfacepotential, drain current, intrinsic charges and intrinsiccapacitances. Closed-form solutions are found for an abruptretrograde channel and results implicative for circuitdesigners are obtained. The model can be extended to include aSi1-xGexretrograde channel. Although the analytical modeldeveloped in this thesis is one-dimensional for long-channeltransistors with the retrograde channel profile varying alongthe depth of the transistor, it should also be applicable forshort-channel transistors provided that the short channeleffects are perfectly controlled. Key Words:MOSFET, SiGe, high-k dielectric, metal gate,mobility, charge sheet model, retrograde channel structure,intrinsic charge, intrinsic capacitance, contactresistivity.

<p>Challenges with integrating high-κ gate dielectric,retrograde Si_1-xGe_xchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si_1-xGex surface-channel and different high-κgate dielectric are examined. Si_1-xGex ρMOSFETs with an Al₂O₃/HfAlO_x/Al₂O₃nano-laminate gate dielectric prepared by means ofAtomic Layer Deposition (ALD) exhibit a great-than-30% increasein current drive and peak transconductance compared toreference Si ρMOSFETs with the same gate dielectric. Apoor high-κ/Si interface leading to carrier mobilitydegradation has often been reported in the literature, but thisdoes not seem to be the case for our Si ρMOSFETs whoseeffective mobility coincides with the universal hole mobilitycurve for Si. For the Si_1-xGe_xρMOSFETs, however, a high density ofinterface states giving riseto reduced carrier mobility isobserved. A method to extract the correct mobility in thepresence of high-density traps is presented. Coulomb scatteringfrom the charged traps or trapped charges at the interface isfound to play a dominant role in the observed mobilitydegradation in the Si_1-xGe_xρMOSFETs.</p><p>Studying contacts with metal silicides constitutes a majorpart of this thesis. With the conventional device fabrication,the Si_1-xGe_xincorporated for channel applications inevitablyextends to the source-drain areas. Measurement and modelingshow that the presence of Ge in the source/drain areaspositively affects the contact resistivity in such a way thatit is decreased by an order of magnitude for the contact of TiWto p-type Si_1-xGe_x/Si when the Ge content is increased from 0 to 30at. %. Modeling and extraction of contact resistivity are firstcarried out for the traditional TiSi₂-Si contact but with an emphasis on the influenceof a Nb interlayer for the silicide formation. Atwo-dimensional numerical model is employed to account foreffects due to current crowding. For more advanced contacts toultra-shallow junctions, Ni-based metallization scheme is used.NiSi_1-xGex is found to form on selectively grown p-typeSi_1-xGe_xused as low-resistivity source/drain. Since theformed NiSi1-xGex with a specific resistivity of 20 mWcmreplaces a significant fraction of the shallow junction, athree-dimensional numerical model is employed in order to takethe complex interface geometry and morphology into account. Thelowest contact resistivity obtained for our NiSi_1-xGe_x/p-type Si_1-xGe_xcontacts is 5´10^-8Ωcm², which satisfies the requirement for the 45-nmtechnology node in 2010.</p><p>When the Si_1-xGe_xchannel is incorporated in a MOSFET, it usuallyforms a retrograde channel with an undoped surface region on amoderately doped substrate. Charge sheet models are used tostudy the effects of a Si retrograde channel on surfacepotential, drain current, intrinsic charges and intrinsiccapacitances. Closed-form solutions are found for an abruptretrograde channel and results implicative for circuitdesigners are obtained. The model can be extended to include aSi_1-xGe_xretrograde channel. Although the analytical modeldeveloped in this thesis is one-dimensional for long-channeltransistors with the retrograde channel profile varying alongthe depth of the transistor, it should also be applicable forshort-channel transistors provided that the short channeleffects are perfectly controlled.</p><p><b>Key Words:</b>MOSFET, SiGe, high-k dielectric, metal gate,mobility, charge sheet model, retrograde channel structure,intrinsic charge, intrinsic capacitance, contactresistivity.</p>

The aim of this study is to examine the feasibility of the multichannel strategy in a B2B complex product context through an in-depth case study on ABB control systems. Firstly, the study focused on investigating the channel strategy for the current ABB control systems. The channel structure and sales cycle have been identified. Secondly, the study identified the challenges which have existed in the channels for ABB control systems. Channel conflicts and lack of channel integration have been recognized as the major challenges. Finally, the thesis proposed improvement suggestions on how to reduce channel conflicts and increase channel integrations for ABB control systems.

本研究旨在探討台灣地區報業的通路結構及影響通路結構的相關產業結構因素。本研究以產業經濟分析架構中有關市場結構與市場行為互動關係(Scherer, 1990)切入，探討報業市場結構變項對報業通路行為變項的影響。此外，本研究也借用通路政治經濟學派(Stern & Reve, 1980)，對於通路外部環境與通路內部環境互動的概念，探析市場結構影響通路結構的外部經濟因素。 　　在本研究中，以「組織規模」、「所有權型態」、「市場集中度」為市場變項，以「通路結構」為市場行為變項。 　　本研究以中國時報、聯合報、自由時報、中央日報及立報五個個案為研究對象，透過深度訪談五個個案的發行部門及其派報經銷商，蒐集有關報社通路運作的實際狀況。所得研究結果簡述如下： 　　一、報業通路結構方面 　　本研究所探討之通路結構，包括報業組織所採用之通路類型、通路長度、通路密度及通路競爭。五個個案報社在零售通路類型方面，大都僅採用直營人員或經銷商。訂戶通路類型則較複雜，五個個案大多採多重形式，透過經銷商、批報販、發行公司等類型發送報紙。 　　在通路長度方面，零售通路呈現兩極化發展，可分為一階通路和三階通路二種。訂戶通路則相當多樣化，各種通路長度都同時存在。在通路密度方面，不論零售或訂戶，各報皆採密集配銷策略。在通路競爭方面，一般來說都屬於中度或高度競爭。 　　二、組織規模與通路結構之關係 　　在組織規模與通路結構的關係上，本研究中的中國時報和聯合報屬於大規模，自由時報屬於中規模，中央日報和立報屬於小規模。整體來說，五個個案所呈現的通路結構，顯示規模愈大的報社愈傾向垂直整合，對通路的控制能力較強。 　　三、市場集中度典通路結構之關係 　　研究結果顯示，在集中度愈低的市場（亦即市場競爭愈激烈），報業組織會傾向採取開放性的通路策略，同時採用多種通路形式，零售密度會因競爭而達到飽和數字，訂戶通路也採取密集配銷的策略。