This thesis presents the rectifying antenna potential for infrared and millimeter wave energy conversion. Infrared imaging is one of the emerging technologies that have attracted considerable attention in the next generation of military, medical, and commercial applications. Moreover, with the ever-increasing congestion of the electromagnetic spectrum at RF and microwave frequencies and the establishment of firm civilian and military requirements best met by millimeter wave systems, the interest in the technology has grown and is now firmly established. During this work a 2.5GHz slot antenna, a 2.5GHz Schottky diode detector, a CPW-to-Microstrip transition, a fully integrated Rectenna element, and a 94GHz slot antenna were designed, fabricated, and tested. Results on the performance of the devices show a great deal of correlation between the simulated and measured data. To perform an initial study, the CPW-fed narrow slot antenna is designed at 2.5GHz and implemented on an FR-4 board. This investigation serves as the basis for the development of the Rectenna element at millimeter wave frequencies. In order to increase the bandwidth of the slot antenna, a 2.5GHz CPW-fed wide slot antenna with U-shaped tuning stub is realized, which provides a 60% increase in bandwidth while keeping the same radiation characteristics. In addition, a set of simulations is performed to show how a reflector plate affects the radiating properties of the slot antenna. A 2.5GHz square-law detector is also designed, fabricated, and tested in order to rectify the RF signal delivered by the antenna. The fabricated detector presents a well matched condition at the design frequency with a dynamic range found to be from --17dBm to --50dBm. The low frequency Rectenna element prototype is then integrated within a single FR-4 board. This is accomplished by implementing a compact via-less CPW-to-Microstrip transition. Finally, a 94GHz CPW-fed wide slot antenna is realized on a 10μm high resistivity silicon membrane. This antenna shows a great deal of similarity to the 2.5GHz slot antenna. This low profile antenna presents at least a 10dB return loss over the entire W band frequency window. Simulated antenna efficiencies of up to 99% were achieved assuming a perfect conductor.

Orientador: Luiz Carlos Kretly / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-13T08:18:49Z (GMT). No. of bitstreams: 1 Atanazio_PauloFilipeBraghetto_M.pdf: 6727187 bytes, checksum: 90bbbbf904ffcce6757eeaeefe4abd96 (MD5) Previous issue date: 2009 / Resumo: O propósito deste trabalho é, a partir dos conceitos de linhas de transmissão, teoria de filtros e o conhecimento pioneiro deste grupo acerca das chaves MEMS de RF, propor duas aplicações reais baseadas nesta estrutura singular: um deslocador de fase e um filtro sintonizável na faixa de 0,1-35GHz e banda Ku (12,4-18GHz) respectivamente. Uma abordagem puramente eletromecânica é realizada na etapa inicial, observando a tensão de ativação da chave para diferentes formas estruturais, desmistificando a histerese mecânica, fenômeno intrínseco a este tipo de dispositivo. Na segunda fase do trabalho é feito um detalhamento do comportamento eletromagnético da chave MEMS, explorando fortemente a extração dos parâmetros elétricos e sua inserção em outros circuitos. Por fim, a implementação do filtro sintonizável e do deslocador de fase realizouse baseada nos conceitos de DMTL - Distributed MEMS Trasmission Lines - onde tanto a seleção da frequência central de passagem do filtro, quanto o comprimento elétrico total do deslocador são controladas pela capacitância variável da chave MEMS, de acordo com uma tensão de controle DC aplicada. / Abstract: The purpose of this work is, based on transmission line concepts, filter theory and the pioneer knowledge of this group about RF MEMS Switches, propose two physical applications employing this singular structure: a phase shifter and a tunable filter at 0.1 - 35GHz range and Ku band respectively. A purely electromechanical approach is done at the initial step, observing the switch pull-in voltages for several structural geometries, demystifying the mechanical hysteresis, intrinsic phenomena of this kind of device. On the second phase of the work, the MEMS switch electromagnetic behavior is detailed, strongly exploring the electrical parameters extraction and its application on other types of circuits. Finally, the tunable filter and phase shifter are implemented through DMTL - Distributed MEMS Transmission Lines - concepts, where frequency selection and the amount of phase shifting are controlled by the variable switch capacitance according to the applied DC control voltage. / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica

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The delivery of tunable millimetre-wave components at 60GHz is of research and development interests with the advent of 5G era. Among applications such as high-data-rate wireless communications, high-precision automotive radars and hand-gesture sensing, variable phase shifters are vital components for antenna arrays to steer an electromagnetic beam without mechanical movement. However, present microwave technology has limited scope in meeting more and more stringent requirements in wavefront phase control and device performance for those cutting-edge applications in the millimetre-wavelength range. Although some existing microwave switchable techniques (such as RF MEMS and solid-state p-i-n diodes) can offer ultra-fast speed for phase modulation, their binary beam-steering nature is resolution-limited and thereby degrades the beam-scanning performance. In response to this, continuously-tunable phase shifting can be realised by using tunable dielectric materials such as ferroelectric BST and liquid crystals (LCs). BST thin films can offer relatively fast switching and modest tunability. However, the increased dielectric loss beyond 10GHz impedes their implementation for higher frequency applications. By comparison, liquid crystals (LCs) have drawn attention in recent years because of their continuous tunability as well as low losses especially at millimetre-wavebands. The principle of shifting the phase continuously is based on the shape anisotropy of LC molecules for variable polarizabilities and hence tunable dielectric constants, which allows wave speed to be controlled with ease by a low-frequency field of only up to 10V. However, LC-based tunable delay lines are not well established in the frequency regime of 60GHz-90GHz because of the limited status of LC microwave technology in which most of the LC based devices have been designed for below 40GHz. It is the aim of this PhD research to bridge the gap and address future societal needs based on our group's focus and experience in developing cutting-edge LC-based agile microwave components. In this work, a liquid crystal (LC) based 0-180˚continuously-variable phase shifter is developed with insertion loss less than -4.4dB and return loss below -15dB across a wide spectrum from 54GHz to 67GHz. The device is driven by a 0-10V AC bias and structured in a novel enclosed coplanar waveguide (ECPW) including an enclosed ground plate in the design, which significantly reduces the instability due to floating effects of the transmission line. This structure screens out interference and stray modes, allowing resonance-free quasi-TEM wave propagation up to 90GHz. The tunable ECPW is optimised by competing spatial volume distribution of the millimetre-wave signal occupying lossy tunable dielectrics versus low-loss but non-tunable dielectrics and minimising the total of dielectric volumetric loss and metal surface loss for a fixed phase-tuning range. A variety of influences affecting the actual device performance are studied, experimented and optimised. Fabricated prototypes exhibit wideband low-loss performance and 0-π continuous tuning with low power consumptions and high linearity compared with the state-of-the-arts. Potentially, the ECPW-fed phased antenna array will be incorporated with advanced beam-forming algorithms to develop compact beam-steering systems of improved performances and targeted for ultra-high-data-rate wireless communications, inter-satellite communications, current road safety improvement, futuristic autonomous driving, and other smart devices such as the hand-gesture recognition.

This dissertation presents the design, fabrication, and characterization of low-voltage capacitive RF MEMS switches. Although, RF MEMS switches have shown superior performance as compared to the existing solid-state semiconductor switches and are viable alternate to the present and the future communication systems, not been able to match the commercial standards due to their poor reliability. Dielectric charging due high actuation is one of the major concerns that limit the reliability of these switches. Hence, the focus of this thesis is on the development of low actuation voltage RF MEMS switches without compromising much on their RF and dynamic performances i.e., low insertion loss and high isolation. Four different switch topologies are studied and discussed. Electromechanical and electromagnetic modelling is presented to study the effect of various components that comprise a MEMS switch on the transient and the RF behaviour. The analytical expressions for switching and release times are established in order to estimate the switching and release times. An in-house developed surface micromachining process is adapted for the micro fabrication. This process eliminates the need for an extra mask used for the anchors and restricts the overall process to four-masks only. These switches are fabricated on 500 µm thick glass substrate. A 0.5 µm thick gold film is used as the structural material. For the final release of the switch, chemical wet etching technique is employed. The fabricated MEMS switches are characterized mechanically and electrically by measuring mechanical resonant frequency, quality factor, pull-in, and pull-up voltages. Since, low actuation voltage switches have slow response time. One of the key objectives of this thesis is to realize switches with fast response time at low actuation voltage. Measurements are performed to estimate the switching and release times. The measured Q-factors of switches are found to be in between 1.1 -1.4 which is the recommended value for Q in MEMS switches for a suppressed oscillation after the release. Furthermore, the effect of hole size on the switching dynamics is addressed. RF measurements are carried out to measure the S-parameters in order to quantify the RF performance. The measured results demonstrate that these switches need low actuation voltage in range of 4.5 V to 8.5 V for the actuation. The measured insertion loss less than -0.8 dB and isolation better than 30 dB up to 40 GHz is reported. In addition, the robustness of realized switches is tested using in-house developed Lab View-based automated measurement test set-up. The reliability test analysis shows no degradation in the RF performance even after 10 millions of switching cycles. Overall yield of 70 -80% is estimated in the present work. Finally, the experimentally measured results presented in this work prove the successful development of low actuation voltage capacitive RF MEMS switches and also offers that even with 0.5 µm thick gold film better reliability for MEMS switches can be achieved.

Le sujet de thèse abordé dans ce mémoire s'inscrit dans la thématique du LE²P sur l'autonomie énergétique des réseaux de capteurs. Ce travail est axé sur la partie réception et redressement du transfert de l'énergie sans fil pour l'apport d'énergie à des capteurs nomades. Ce procédé n'est pas nouveau et prend son origine dans les années 1950. Les connaissances dans l'appréhension de ce processus sont nombreuses pour certains guides d'onde tels que le microruban. Mais la nécessité de perçages dans ces structures de guide d'onde peut être contraignante et causer des disparités dans une chaîne de construction. Ceci a motivé les travaux présentés dans ce mémoire qui utilise une technologie de guide d'onde coplanaire (CPW) peu exploitée. Ainsi, la conception d'un tel dispositif passe par la maîtrise d'un point de vue conceptuel et expérimental de cette technologie. La démarche consiste à utiliser ce guide d'onde coplanaire en minimisant les effets négatifs que peut engendrer ce dernier, pour s'abroger du besoin de perçage et faciliter la réalisation des dispositifs de redressement en limitant le nombre d'interactions humaines. / The thesis subject dealt in this report lies in the LE²P framework on the energy sustainability of wireless sensor network. This work is dedicated to the reception and rectifying part of wireless power transfer to give energy sustainability to nodes in a sensor network. This process is not new and originate from the years 1950. The behavior of this process is since well-known in several waveguide such technology as microstrip. But the need of drill in those waveguide circuit may be inconvenient and lead to discrepancy from one circuit to another. This was the motivational keystone to the work address in this report which uses coplanar waveguide (CPW) over microstrip. The conception of such devices goes through a good conceptual and experimental understanding of the waveguide technology. The approach in this document consists of using coplanar waveguide while minimizing its drawbacks, in order to avoid drilling in the substrate and ease the realization of the rectifying part by limiting the human interaction.

The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA topologies and their design methodologies one of the most challenging tasks for the realisation of the SKA. The LNA design is a compromise between the topology selection, wideband matching for a low noise figure, low power consumption and linearity. Considering these critical issues, this thesis describes the procedure for designing a monolithic microwave integrated circuit (MMIC) LNA for operation in the mid frequency band (400 MHz to 1.4 GHz) of the SKA. The main focus of this work is to investigate the potential of MMIC LNA designs based on a novel InGaAs/InAlAs/InP pHEMT developed for 1 µm gate length transistors, fabricated at The University of Manchester. An accurate technique for the extraction of empirical linear and nonlinear models for the fabricated active devices has been developed. In addition to the linear and nonlinear model of the transistors, precise models for passive devices have also been obtained and incorporated in the design of the amplifiers. The models show excellent agreement between measured and modelled DC and RF data. These models have been used in designing single, double and differential stage MMIC LNAs. The LNAs were designed for a 50 Ω input and output impedance. The excellent fits between the measured and modelled S-parameters for single and double stage single-ended LNAs reflects the accurate models that have been developed. The single stage LNA achieved a gain ranging from 9 to 13 dB over the band of operation. The gain was increased between 27 dB and 36 dB for the double stage and differential LNA designs. The measured noise figures obtained were higher by ~0.3 to ~0.8 dB when compared to the simulated figures. This is due to several factors which are discussed in this thesis. The single stage design consumes only a third of the power (47 mW) of that required for the double stage design, when driven from a 3 V supply. All designs were unconditionally stable. The chip sizes of the fabricated MMIC LNAs were 1.5 x 1.5 mm2 and 1.6 x 2.5 mm2 for the single and double stage designs respectively. Significantly, a series of differential input to single-ended output LNAs became of interest for use in the Square Kilometre Array (SKA), as it utilises differential output antennas in some of its configurations. The single-ended output is preferable for interfacing to the subsequent stages in the analogue chain. A noise figure of less than 0.9 dB with a power consumption of 180 mW is expected for these designs.

A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The inherent atmospheric attenuation at 60 GHz due to oxygen absorption makes the frequency range ideal for short distance communication networks. For these mm-wave wireless networks, the low noise amplifier (LNA) is a critical subsystem determining the receiver performance i.e., the noise figure (NF) and receiver sensitivity. It however proves challenging to realise high performance mm-wave LNAs in a silicon (Si) complementary metal-oxide semiconductor (CMOS) technology. The mm-wave passive devices, specifically on-chip inductors, experience high propagation loss due to the conductivity of the Si substrate at mm-wave frequencies, degrading the performance of the LNA and subsequently the performance of the receiver architecture. The research is aimed at realising a high performance mm-wave LNA in a Si BiCMOS technology. The focal points are firstly, the fundamental understanding of the various forms of losses passive inductors experience and the techniques to address these issues, and secondly, whether the performance of mm-wave passive inductors can be improved by means of geometry optimising. An associated hypothesis is formulated, where the research outcome results in a preferred passive inductor and formulates an optimised passive inductor for mm-wave applications. The performance of the mm-wave inductor is evaluated using the quality factor (Q-factor) as a figure of merit. An increased inductor Q-factor translates to improved LNA input and output matching performance and contributes to the lowering of the LNA NF. The passive inductors are designed and simulated in a 2.5D electromagnetic (EM) simulator. The electrical characteristics of the passive structures are exported to a SPICE netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 13μ-m SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures as a benchmark, while the second LNA, identical to the first, replaces one inductor with the optimised inductor. Experimental verification allows complete characterization of the passive inductors and the performance of the LNAs to prove the hypothesis. According to the author's knowledge, the slow-wave coplanar waveguide (S-CPW) achieves a higher Q-factor than microstrip and coplanar waveguide (CPW) transmission lines at mm-wave frequencies implemented for the 130 nm SiGe BiCMOS technology node. In literature, specific S-CPW transmission line geometry parameters have previously been investigated, but this work optimises the signal-to-ground spacing of the S-CPW transmission lines without changing the characteristic impedance of the lines. Optimising the S-CPW transmission line for 60 GHz increases the Q-factor from 38 to 50 in simulation, a 32 % improvement, and from 8 to 10 in measurements. Furthermore, replacing only one inductor in the output matching network of the LNA with the higher Q-factor inductor, improves the input and output matching performance of the LNA, resulting in a 5 dB input and output reflection coefficient improvement. Although a 5 dB improvement in matching performance is obtained, the resultant noise and gain performance show no significant improvement. The single stage LNAs achieve a simulated gain and NF of 13 dB and 5.3 dB respectively, and dissipate 6 mW from the 1.5 V supply. The LNA focused to attain high gain and a low NF, trading off linearity and as a result obtained poor 1 dB compression of -21.7 dBm. The LNA results are not state of the art but are comparable to SiGe BiCMOS LNAs presented in literature, achieving similar gain, NF and power dissipation figures. / Dissertation (MEng)--University of Pretoria, 2012. / Electrical, Electronic and Computer Engineering / unrestricted