For III-nitride wide-bandgap materials, the lack of efficient p-type wide bandgap semiconductors limits the full potential of group-III nitride-based optoelectronic devices. Conventional wide bandgap p-type materials consisting of magnesium-doped gallium nitride (GaN:Mg) and magnesium-doped aluminum gallium nitride (AlGaN:Mg) typically exhibit low hole carrier concentrations of <1018 cm-3 . Hence, I used different wide bandgap inorganic p-type materials as a promising solution, e.g., copper thiocyanate (CuSCN). CuSCN has multiple attractive properties that hold potential for applications in III-nitride materials. For example, its energy band gap is up to 3.9 e.V and its electron effective mass is higher than its hole effective mass. These two key features make CuSCN a potential wide bandgap p-type material for III-nitride systems. By exposing CuSCN to chlorine, Cl2-infused CuSCN thin film achieves a hole concentration up to 3 × 1018 cm-3 and maintains its visible-light-blind optical properties. Based on these desirable features, p CuSCN/n-GaN heterojunction ultraviolet photodetectors, as well as the p-CuSCN and n GaN interface, were fabricated to investigate the potential applications of p-CuSCN in III nitride devices. Moreover, p-CuSCN also benefits the corresponding organic solar cells; p CuSCN-based organic solar cells perform better in power conversion efficiency and stability tests under various conditions than intrinsic CuSCN-based organic solar cells. This work on p-CuSCN not only paves the way for new III-nitride semiconductor devices, but may also potentially enable the development of organic devices with better performance and longer lifetime. To explore the potential of transition metal oxides in UV photodetectors, NiO was selected to proceed with device fabrication because of its wider energy bandgap and lower hole effective mass than other transition metal oxides. Since single crystal quality is required to maintain its visible-light-blind optical property, brand-new templates were invented to grow single-crystal NiO thin films, TiN/MgO, and TiN/Si. Use of TiN thin film between NiO and the substrates provides a good back-side metal contact for NiO-based semiconductor devices. Several tools were employed to ascertain the single-crystal quality of as-grown NiO thin films on TiN/MgO and TiN/Si. I demonstrate NiO/TiN/MgO and NiO/TiN/Si bilayer structures may pave the way towards better NiO-based ultraviolet optoelectronic devices.

Dans les cellules photovoltaïques organiques, le matériau utilisé pour le transport de trous entre la couche active et l'électrode, est généralement un polymère dopé, dont la stabilité peut être problématique. L'objectif de cette thèse a été de développer des matériaux inorganiques, a priori plus stables, pour remplacer les couches de polymères de transport de trous, tout en restant compatible avec les méthodes de dépôts par voie liquide. L'utilisation de nanoparticules dispersées en solution a été choisie car cela permet le dépôt à basse température, sans nécessité de conversion vers une couche fonctionnelle, contrairement aux voies sol-gel. Le premier objectif de ce travail a donc été l'obtention de nanoparticules d'oxyde de tungstène, hydraté ou non, et de thiocyanate de cuivre. Une synthèse de chauffage assisté par micro-ondes a été utilisée pour l'oxyde de tungstène, permettant d'obtenir des nanoparticules de 30 nm et monodisperses. Pour le thiocyanate de cuivre, il a été choisi de travailler par broyage. Les paramètres du broyage ont été optimisés pour obtenir des particules avec la plus faible distribution en taille possible. Le dépôt de ces dispersions de nanoparticules a permis l'obtention de couches minces et la caractérisation de leurs propriétés optoélectroniques, et notamment du travail de sortie, qui s'est révélé adapté pour une utilisation en dispositif. Des cellules solaires organiques de structures standard et inverse incorporant ces matériaux ont ensuite été réalisées. De bonnes performances ont été obtenues avec une couche active à base de P3HT, notamment en structure inverse où la possibilité d'utiliser le thiocyanate de cuivre a été démontrée pour la première fois. Le suivi des performances sous éclairement et atmosphère contrôlée a également été effectué et a montré un vieillissement rapide pour ces cellules comparées aux cellules de référence à couche de transport de trous polymère. / In organic solar cells, a doped polymer is the most used material for hole transport between the active layer and the electrode, but his stability can be an important issue. The goal of this PhD thesis was to develop inorganic materials, expected to be more stable, in order to replace polymer based hole transporting layers. Another requirement was to keep the compatibility with solution-based deposition methods. The target was to develop nanoparticle dispersions, deposited at low temperature and giving directly a functional layer, without the need of further treatments which are usually required via sol-gel processes. A first objective of the present work was thus the elaboration of nanoparticles of tungsten oxide, hydrated or non-hydrated, and copper thiocyanate. A microwave-assisted heating synthesis has been used for tungsten oxide, leading to mono-dispersed particles around 30 nm. Concerning copper thiocyanate, a ball milling technique has been chosen. The process parameters have been optimized to obtain nanoparticles to narrow the size distribution as much as possible. The deposition of the nanoparticles has allowed the formation of thin layers and the characterization of their optoelectronic properties, such as work function, which was shown to be a relevant parameter for a use in devices. Organic solar cells with standard or inverted structures have been fabricated using these materials as a hole transporting layer. Good photovoltaic performances have been obtained, especially in the inverted structure, in which the possibility to use copper thiocyanate has been demonstrated for the first time. Ageing experiments under light in a controlled atmosphere have also been carried out and have shown a rapid drop in performances for these cells compared to cells incorporating polymer based hole transport layers.