Gu Ying. / Thesis (Ph.D.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (p. [111]-117). / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Thesis. 1978. M.S.--Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Includes bibliographical references. / M.S.

The state-of-the-art in high voltage and high energy density capacitors is dominated by biaxially oriented polypropylene (BOPP), a linear dielectric with electronic polarizability but low dielectric constant (2.2). BOPP provides an energy density of 5 J/cm3 at the breakdown, which occurs at 720 MV/m for films 10 micrometer thick. While there are many approaches to increase the energy, they either offer solutions to specific applications or suffer from fundamental limitations. The principal focus of the dissertation will be centered on rational design for the development of such materials. We study all three verticals of dielectric properties, namely: dielectric permittivity; dielectric loss; and breakdown strength. We then use the information obtained to design a copolymer with enhanced dielectric properties. We start by using simulations and experiments to delineate the mechanism by which the addition of a small number of polar --OH groups to a nonpolar polymer increases the static relative permittivity (or dielectric constant) by a factor of 2. However, the dielectric loss in the frequency regime of interest to power electronics is less than 1%. We observe that a small amount of adsorbed water plays a critical role in this attenuated loss. Further, we study the effect of other polar pendant groups on dielectric properties of polyethylene. By systematically comparing the static relative permittivity of crystalline and semi-crystalline samples we find amorphous phase as the dominant player in these types of material. The constraints provided by the surrounding chains significantly impede dipolar relaxations in the crystalline regions, whereas amorphous chains must sample all configurations to attain their fully isotropic spatial distributions. We also explore the use of the time--temperature superposition (tTS) principle for calculating the dielectric loss of the dielectric materials. This approach helps us explore time scales in simulations which were previously inaccessible using classical MD. We find that the tTS method performed well in determining dielectric losses in the system as long as unrelaxed components are not included in the calculation. This methodology, which provides us with a significantly faster and reliable pathway for calculation of dielectric loss, allows us to identify the role of polar sidegroups on the dielectric loss of common non-polar polymeric dielectrics. Further, we explore the dielectric breakdown mechanism in polymer dielectrics by introducing external electric fields in the materials. Conventionally the prediction of dielectric strength has focused on ground state energy calculation, thus restricting the analysis of the breakdown process to purely electronic in nature. While this provides reasonable predictions for low-temperature systems, we observe that electromechanical breakdown plays a crucial role in the high-temperature regimes. Our simulation results suggest that fracture mechanics drive electromechanical breakdown, which dominates over electronic breakdown at relevant operating temperatures.  Finally, we utilized these fundamental insights into dielectric properties for designing copolymer with enhanced dielectric properties.

Yuen, Ying Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 90-96). / Abstracts in English and Chinese. / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction to Electron Field Emission --- p.1 / Chapter 1.2 --- Theory of Electron Field Emission --- p.4 / Chapter 1.3 --- Fowler Nordheim Model for Electron Field Emission in Metals --- p.5 / Chapter 1.4 --- Factors Affecting the Field Emission Properties --- p.7 / Chapter 1.4.1 --- Surface Morphology --- p.7 / Chapter 1.4.2 --- Electrical Inhomogeneity --- p.7 / Chapter 1.5 --- Goal of this Project --- p.9 / Chapter Chapter 2 --- Sample Preparation and Characterization Methods / Chapter 2.1 --- Sample Preparation --- p.11 / Chapter 2.1.1 --- MEVVA Ion Implantation System --- p.13 / Chapter 2.1.2 --- TRIM Simulation --- p.17 / Chapter 2.1.3 --- Implantation Conditions --- p.19 / Chapter 2.2 --- Characterization Methods --- p.21 / Chapter 2.2.1 --- AFM - Atomic Force Microscopy --- p.21 / Chapter 2.2.2 --- C-AFM ´ؤ Conducting Atomic Force Microscopy --- p.23 / Chapter 2.2.3 --- RBS - Rutherford Backscattering Spectrometry --- p.23 / Chapter 2.2.4 --- TEM - Transmission Electron Microscopy --- p.26 / Chapter 2.2.5 --- Field Emission Measurement --- p.27 / Chapter Chapter 3 --- Field Emission Properties of Co-Si02 / Chapter 3.1 --- Introduction --- p.29 / Chapter 3.2 --- RBS results --- p.30 / Chapter 3.3 --- Experimental results of as-implanted Co-SiO2 samples --- p.32 / Chapter 3.3.1 --- AFM and results --- p.32 / Chapter 3.3.2 --- Field emission properties of as-implanted Co-Si02 --- p.35 / Chapter 3.4 --- Step-like and jump-like features in the J-E plots --- p.39 / Chapter 3.5 --- Chapter Summary --- p.43 / Chapter Chapter 4 --- Field Emission Properties of Fe-SiO2 / Chapter 4.1 --- Introduction --- p.45 / Chapter 4.2 --- RBS results --- p.46 / Chapter 4.3 --- Experimental results of as-implanted Fe-SiO2 samples --- p.48 / Chapter 4.3.1 --- AFM and results --- p.48 / Chapter 4.3.2 --- Field emission properties of as-implanted Fe-SiO2 --- p.51 / Chapter 4.3.3 --- Comparison with as-implanted Co-SiO2 --- p.54 / Chapter 4.4 --- Experimental results of annealed Fe-SiO2 samples --- p.57 / Chapter 4.4.1 --- Annealing conditions --- p.57 / Chapter 4.4.2 --- AFM and C-AFM results --- p.57 / Chapter 4.4.3 --- TEM Images --- p.62 / Chapter 4.4.4 --- Field emission properties of annealed Fe-SiO2 --- p.68 / Chapter 4.5 --- Step-like and jump-like features in the J-E plots --- p.81 / Chapter 4.6 --- Field Emission Images --- p.84 / Chapter 4.7 --- Chapter Summary --- p.85 / Chapter Chapter 5 --- Conclusion & Future Plan --- p.87 / Reference --- p.90 / Appendix / Chapter A. --- Derivation of the Fowler Nordheim Equation --- p.97

R.M. Redheffer. / "December 1, 1946." / Includes bibliographical references. / Army Signal Corps Contract No. W-36-039 sc-32037

Ph.D. / Materials Science and Engineering / Polytitanates in the BaO- TiO2 system with Ba:Ti ratios ranging from 1:2 to 1:5 were prepared using a low temperature technique developed by Pechini. The samples were heated at 600 to 1300°C in oxygen. Room temperature Raman spectroscopy was used to investigate the phase relations in this system. Results of this study indicate the following: except for BaTi4O9, the powders of these compounds were amorphous when heated at 600°C for 4hrs; the compound BaTi2O5 is a low temperature stable phase; Ba6Ti17O40 forms only at temperatures above 1100°C; Ba4Ti13O30 does not form below 1000°C; the single phase BaTi4O9 structure was observed at 1200°C'; the Ba2Ti9O20 phase is obtained only after long heat treatment at 1200°; BaTi5O11 was stable up to 1200°C, at which it decomposes into Ba2Ti4O20 and TiO2. After determination of stability relationships in this system, the electrical conductivities of these compounds were examined as a function of temperature and oxygen partial pressure. For all the temperatures (850-1150°C) studied, the conductivities of these compounds increased with decreasing oxygen partial pressure resulting in n-type properties throughout the whole P[subscript O2] range (10[superscript -19 - 1atm). The P[subscript O2] dependencies of the electrical conductivity were found to be linear for an extensive range of oxygen partial pressures. On the basis of structural considerations the conductivity data was described by a majority defect model consisting of both singly and doubly ionized oxygen vacancies. For lower oxygen partial pressure values a drastic change in the electrical conductivity was observed. This is believed to result from increasing defect interaction for larger departures from stoichiometry. A defect model based on this interaction is proposed to account for the observed sharp change in the electrical conductivity values.

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 124-135). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--Oregon State University, 2010. / Printout. Includes bibliographical references (leaves 204-213). Also available on the World Wide Web.

Thesis (Ph. D.)--University of Hong Kong, 2010. / Includes bibliographical references. Also available in print.

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 160-167). Available also in a digital version from Dissertation Abstracts.