Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Made available in DSpace on 2016-03-07T19:20:46Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-07-17. Added 1 bitstream(s) on 2016-03-07T19:24:27Z : No. of bitstreams: 1 000859258.pdf: 5446066 bytes, checksum: d48de1abbbfcb40fa968637656c44ca4 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O CaCu3Ti4O12 (CCTO) possui alta potencialidade para ser utilizado em várias aplicações tecnológicas, entre estas dielétricas e varistores. A cerâmica Ca2CU2Ti4O12 (com duas fases CCTO e CaTiO3) apresenta um bom coeficiente de não linearidade (a) quando comparado com a fase pura de CCTO o que potencializa sua aplicação como varistor, entretanto, a corrente de fuga (If) ainda é considerada elevada para aplicações comerciais. Outro fator importante é que o Brasil é um dos países com maior número de jazidas de SnO2 material que tem-se tornado interessante para a elaboraçao de varistores. Neste trabalho foram sintetizados mediante reação em estado sólido pós cerâmicos de Ca2Cu2Ti4-xSnxO12 (0,0<x<4,0). Os pós foram inicialmente caracterizados com análise termogravimétrica, técnica que mostrou duas perdas de massa, uma perto de 200ºC associada à saida de água e outra perto de 800ºC devida à decomposição do CaCO3. A análise com microscopia eletrônica de varredura (MEV) na cerâmica na forma de pós mostraram que com o aumento de Sn4+ as amostras apresentaram algumas morfologias alongadas. A difratometria de raios X (DRX) mostrou que com o aumento de Sn4+ surgem às fases SnO2, CaSnO3 e CuO, e diminui as fases de CaTiO3 e CaCu3Ti4O12. A técnica de dilatometria óptica indicou duas temperaturas de sinterização: 1150ºC para as amostras com baixo teor de Sn4+ (x=0,0;0,1;0,2 e 2,0) e 1400ºC para as de maior teor de Sn4+ (x=3,8; 3,9 e 4,0). As pastilhas foram caracterizadas usando a técnica de difratometria de raios X cuja principal diferença em relação ao pós calcinados foi a presença da fase TiO2 para a amostra com x=0,0. A análise microestrutural mostrou crescimento geral de grãos com a substituição de Sn4+. A massa específica pelo método de Arquimedes e porosimetria de mercúrio mostraram corpos cerâmicos altamente densos, com poros de tamanhos menores a 1x10-2 um. Em relação à resposta dielétrica... / The CaCu3TiO12 (CCTO) has a high potential for use in various technological applications, among these dielectric and varistors. The Ca2Cu2Ti4O12 ceramics (with two CCTO and CaTiO3 phases) having a good coefficient of non-linearity (a) when compared with phase pure CCTO which enhances its application as a varistor, however, the leakage current (If) is still considered high for commercial applications. In this work we were synthesized by reaction ceramic powders solid state Ca2Cu2Ti4-xSnxO12 (0.0, < x <4.0). The powders were initially characterized by thermogravimetric analysis, a technique which showed two weight losses, one near 200ºC associated with the output of water and other close to 800ºC due to decomposition of CaCO3. The analysis with scanning electron microscopy (SEM) in the ceramic in powder showed that with increasing Sn4+ samples showed some elongated morphologies. The X-ray diffraction (XRD) showed that with the increase of Sn4+ phases arise, SnO2, CaSnO3, and CuO, and decrease the phases of CaTiO3 and CaCu3Ti4O12. The optical technique dilatometry indicated two sintering temperature: 1150ºC for samples with low Sn4+ concentration (x=0,0,0.1, 0.2 and 2.0) and 1400ºC for the highest content of Sn4+ (x=3.8, 3.9 and 4.0). The ceramics were characterized using the technique of diffraction X-ray whose main difference in relation to the calcined powders is the presence of TiO2 phase to the sample with x=0.0. Microstructural analysis showed overall grain growth with the addition of Sn4+. The density by Achimedes method and mercury porosimetry showed highly dense ceramic bodies with pore sizes smaller to 1x10-2 um. Concerning the dielectric response is found high dielectric constant values for the samples with x=0.0; x=0.1 and x=0.2 presenting also lower dielectric loss. Samples showed varistor response were x=0.0; x=3,8; x=3.9 and x = 4.0 making it quite interest samples with high content of Sn4+ because the phases present as...

Made available in DSpace on 2014-06-11T19:25:34Z (GMT). No. of bitstreams: 0 Previous issue date: 2010-02-12Bitstream added on 2014-06-13T19:12:28Z : No. of bitstreams: 1 ribeiro_wc_me_araiq.pdf: 1297255 bytes, checksum: f4a271b5dffa7eda6a4d75757f166f05 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Neste trabalho buscou-se estabelecer uma correlação entre as propriedades nãoôhmicas e dielétricas do CaCu3Ti4O12 (CCTO) considerando a influência da microestrutura obtida pela variação do tempo de sinterização (3, 12, 24, 48 ou 72 h). Em virtude dos modelos descritos na literatura não contemplarem todas as características elétricas apresentadas pelo CCTO, um modelo chamado NBLC (Nanosized Barrier Layer Capacitor) foi delineado, discutido e aplicado sobre os resultados obtidos. Além disso, a adição de SnO2 no CCTO foi realizada para validar o modelo NBLC. As medidas de difração de raios-X (DRX) e microscopia eletrônica de varredura (MEV) mostraram que as medidas elétricas não possuem relação com a formação de precipitados ou fase secundária dentro do limite das técnicas. A diminuição do campo elétrico de ruptura r E e do coeficiente de não linearidade a , além do aumento da corrente de fuga f I , exibiram a degradação da propriedade não-ôhmica com o aumento do tempo de sinterização que foram relatados a dessorção de oxigênio. Como consequência, as resistências do grão e do contorno de grão diminuíram, assim como a quantidade de cargas no contorno de grão. Para verificar a origem da constante dielétrica, foram analisados os processos de relaxação dielétrica e condutiva que apresentaram 3 processos: cargas espaciais no contorno de grão (baixa frequência), cargas espaciais nas nanobarreiras capacitivas (frequência intermediária) e polarização hopping de polarons (alta frequência). A energia de ativação para o fenômeno em alta frequência foi calculada, indicando a presença de polarons na estrutura. Para estabelecer a relação entre tempo de sinterização e quantidade de defeitos no material, medidas de colorimetria foram efetuadas. O modelo NBLC conciliou a elevada constante dielétrica com baixa resistência que, a princípio... / The goal of this work was established a correlation between non-ohmic and dielectric behavior in CaCu3Ti4O12 (CCTO) polycrystalline ceramics in that was verified the influence of microstructure obtained in several sintering time (3, 12, 24, 48 or 72 h). The NBLC model (Nanosized Barrier Layer Capacitor) was described and applied over the results obtained here. This model showed to be better than the literature models because can join high dielectric constant and low resistivity. The CCTO ceramics was doping by SnO2 to valid NBLC model. X-ray diffraction (XRD) and scanning electronic microscopy (SEM) measurements showed that secondary phase or precipitated has no relation with electrical behavior. Switch electric field r E and nonlinear coefficient a increased while leakage current f I diminished function of sintering time. These facts were related of oxygen desorption and as a consequence the grain and grain boundary resistivity decreased. The origin of dielectric behavior was discussed based on relaxation process amount, obtained 3 processes: space charge in grain boundary (low frequency), space charge in nanosized barriers (medium frequency) and hopping polarization of polaron (high frequency). Activation energy of the high frequency phenomenon was a clue of polaron existence. To establish a relationship between sintering time and defect amount in the material, colorimetric measurements were carried out. The incoherencies of CCTO electrical features present in the literature were explained by NBLC model. The SnO2 doping CCTO was carried out to support NBLC model. Thus, the non-ohmic property improved when no stacking faults had. The grain and grain boundary resistivity increased and dielectric constant diminished two fold orders. The defect amount control is important to point the better application: high frequency dielectric or varistor device

Orientador: Miguel Angel Ramírez Gil / Banca: Sergio Francisco dos Santos / Banca: Miguel Adolfo Ponce / O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem carater institucional e integra as atividades de pesquisa em materiais de diversos campi / Resumo: O CaCu3Ti4O12 (CCTO) possui alta potencialidade para ser utilizado em várias aplicações tecnológicas, entre estas dielétricas e varistores. A cerâmica Ca2CU2Ti4O12 (com duas fases CCTO e CaTiO3) apresenta um bom coeficiente de não linearidade (a) quando comparado com a fase pura de CCTO o que potencializa sua aplicação como varistor, entretanto, a corrente de fuga (If) ainda é considerada elevada para aplicações comerciais. Outro fator importante é que o Brasil é um dos países com maior número de jazidas de SnO2 material que tem-se tornado interessante para a elaboraçao de varistores. Neste trabalho foram sintetizados mediante reação em estado sólido pós cerâmicos de Ca2Cu2Ti4-xSnxO12 (0,0<x<4,0). Os pós foram inicialmente caracterizados com análise termogravimétrica, técnica que mostrou duas perdas de massa, uma perto de 200ºC associada à saida de água e outra perto de 800ºC devida à decomposição do CaCO3. A análise com microscopia eletrônica de varredura (MEV) na cerâmica na forma de pós mostraram que com o aumento de Sn4+ as amostras apresentaram algumas morfologias alongadas. A difratometria de raios X (DRX) mostrou que com o aumento de Sn4+ surgem às fases SnO2, CaSnO3 e CuO, e diminui as fases de CaTiO3 e CaCu3Ti4O12. A técnica de dilatometria óptica indicou duas temperaturas de sinterização: 1150ºC para as amostras com baixo teor de Sn4+ (x=0,0;0,1;0,2 e 2,0) e 1400ºC para as de maior teor de Sn4+ (x=3,8; 3,9 e 4,0). As pastilhas foram caracterizadas usando a técnica de difratometria de raios X cuja principal diferença em relação ao pós calcinados foi a presença da fase TiO2 para a amostra com x=0,0. A análise microestrutural mostrou crescimento geral de grãos com a substituição de Sn4+. A massa específica pelo método de Arquimedes e porosimetria de mercúrio mostraram corpos cerâmicos altamente densos, com poros de tamanhos menores a 1x10-2 um. Em relação à resposta dielétrica... / Abstract: The CaCu3TiO12 (CCTO) has a high potential for use in various technological applications, among these dielectric and varistors. The Ca2Cu2Ti4O12 ceramics (with two CCTO and CaTiO3 phases) having a good coefficient of non-linearity (a) when compared with phase pure CCTO which enhances its application as a varistor, however, the leakage current (If) is still considered high for commercial applications. In this work we were synthesized by reaction ceramic powders solid state Ca2Cu2Ti4-xSnxO12 (0.0, < x <4.0). The powders were initially characterized by thermogravimetric analysis, a technique which showed two weight losses, one near 200ºC associated with the output of water and other close to 800ºC due to decomposition of CaCO3. The analysis with scanning electron microscopy (SEM) in the ceramic in powder showed that with increasing Sn4+ samples showed some elongated morphologies. The X-ray diffraction (XRD) showed that with the increase of Sn4+ phases arise, SnO2, CaSnO3, and CuO, and decrease the phases of CaTiO3 and CaCu3Ti4O12. The optical technique dilatometry indicated two sintering temperature: 1150ºC for samples with low Sn4+ concentration (x=0,0,0.1, 0.2 and 2.0) and 1400ºC for the highest content of Sn4+ (x=3.8, 3.9 and 4.0). The ceramics were characterized using the technique of diffraction X-ray whose main difference in relation to the calcined powders is the presence of TiO2 phase to the sample with x=0.0. Microstructural analysis showed overall grain growth with the addition of Sn4+. The density by Achimedes method and mercury porosimetry showed highly dense ceramic bodies with pore sizes smaller to 1x10-2 um. Concerning the dielectric response is found high dielectric constant values for the samples with x=0.0; x=0.1 and x=0.2 presenting also lower dielectric loss. Samples showed varistor response were x=0.0; x=3,8; x=3.9 and x = 4.0 making it quite interest samples with high content of Sn4+ because the phases present as... / Mestre

Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico / Com o desenvolvimento da tecnologia sem fio, muitos dispositivos eletrÃnicos exigem alta integraÃÃo e que possuam propriedades multifuncionais. Em tal caso, compÃsitos magneto-dielÃtricos tÃm atraÃdo muita atenÃÃo devido as suas propriedades. Nesse sentido, a pesquisa sobre compÃsitos à empregada para a busca de novos materiais. O titanato de cÃlcio (CaTiO3 - CTO) e a granada de Ãtrio e ferro (Y3Fe5O12 - YIG) possuem excelentes propriedades dielÃtricas e ferrimagnÃticas, respectivamente. Este trabalho apresenta a obtenÃÃo do compÃsito ferrimagnÃtico, constituÃdo pelas fases YIG e CTO, atravÃs da rota sintÃtica no estado sÃlido com a utilizaÃÃo de moagem mecÃnica de alta energia. As fases das cerÃmicas foram sinterizadas a 1200ÂC/5h. A DifraÃÃo de Raios-X, a Espectroscopia Raman e MÃssbauer foram essenciais para caracterizaÃÃo estrutural dos compÃsitos. A morfologia das amostras foi elucidada pela Microscopia EletrÃnica de Varredura e auxiliada pela Picnometria a fim de avaliar a densificaÃÃo do material. Adicionalmente, foram realizados experimentos para se avaliar o comportamento elÃtrico e magnÃtico dos compÃsitos na faixa de radiofrequÃncia e de micro-ondas, para depois sugerir uma aplicaÃÃo tecnolÃgica cabÃvel. Os resultados obtidos pela DifraÃÃo de Raio X e da Espectroscopia Raman confirmaram que a sÃntese das fases foi realizada de forma satisfatÃria. As anÃlises qualitativas dos espectros MÃssbauer mostraram boa concordÃncia com os resultados apresentados pela DifraÃÃo de raios-x. Os compÃsitos apresentaram permissividade dielÃtrica praticamente constante na faixa de 50 MHz a 1,5 GHz. Ao analisar o aumento e a diminuiÃÃo da concentraÃÃo em massa de CTO e YIG, respectivamente, foi percebido que os valores de &#949;r aumentaram. A partir dos valores obtidos, pode-se sugerir que o compÃsito sintetizado possui potencial para ser utilizado em dispositivos de micro-ondas, tais como para antenas monopolo. / With the development of wireless technology, many electronic devices require high integration and materials with multifunctional properties. In such a case, magneto-dielectric composites have attracted much attention because they have both magnetic and dielectric properties. In this sense, research on composites is employed to search for new materials. The calcium titanate and yttrium iron garnet possess excellent dielectric properties and ferrimagnetic, respectively. This paper presents the preparation of ferrimagnetic composite, comprising the steps Y3Fe5O12 (YIG) and CaTiO3 (CTO) by the solid state synthetic route with the use of high energy mechanical grinding. The phases of the ceramics were sintered at 1200  C for 5 h. The X-ray diffraction, Raman and MÃssbauer Spectroscopy were used to elucidade structural properties of the composites. The morphological characteristics of the samples were elucidated by Scanning Electron Microscopy and supported by Pycnometry to analyze the densification of the material. Furthermore, experiments to evaluate the electrical and magnetic behavior of composites in the range of radiofrequency and microwave were performed and finally an appropriate technological application was suggested. The results obtained by X-Ray Diffraction and Raman spectroscopy confirm that the synthesis of YIG was successfully obtained. The structural characterization of pure and composite samples was performed successfully and the formation of ionic phase in composites YIG-CTO was found, being in the same family of oxide in which the CTO is inserted. Qualitative analysis of the MÃssbauer spectra showed good agreement with the results reported by x-ray diffraction. The dielectric permittivity composites showed almost constant in the range of 50 MHz to 1.5 GHz. Evaluating the increasing and decreasing in mass concentration of CTO and YIG, respectively and it was realized that the values of &#949;r increased. Two profiles was noticed in the compositional series, it can be inferred that the possibility of the reaction of YIG and CTO products may be interfering with the proper measurements.

This study measures Radiation Induced Conductivity (RIC) in five insulating polymeric materials over temperatures ranging from ~110 K to ~350 K: polyimide (PI or Kapton HNTM and Kapton ETM), polytetraflouroethylene (PTFE or TeflonTM), ethylene-tetraflouroethylene (ETFE or TefzelTM), and Low Density Polyethylene (LDPE). RIC occurs when incident ionizing radiation deposits energy and excites electrons into the conduction band of insulators. Conductivity was measured when a voltage was applied across vacuum-baked, thin film polymer samples in a parallel plate geometry. RIC was calculated as the difference in sample conductivity under no incident radiation and under an incident ~4 MeV electron beam at low incident dose rates of 0.01 rad/sec to 10 rad/sec. The steady-state RIC was found to agree well with the standard power law relation, σRIC(D) = kRIC(T) DÄ(T) between conductivity, óRIC and adsorbed dose rate, D. Both the proportionality constant, kRIC, and the power, Ä, were found to be temperature-dependent above ~250 K, with behavior consistent with photoconductivity models developed for localized trap states in disordered semiconductors. Below ~250 K, kRIC and Ä exhibited little change in any of the materials.

The widespread use of electronics in more avenues of consumer use is increasing. Applications range from medical instrumentation that directly can affect someone's life, down hole sensors for oil and gas, aerospace, aeronautics, and automotive electronics. The increased power density and harsh environment makes the reliability of the packaging a vital part of the reliability of the device. The increased importance of analog devices in these applications, their high voltage and high temperature resilience is resulting in challenges that have not been dealt with before. In particular packaging where insulative properties are vital use polymer resins modified by ceramic fillers. The distinct dielectric properties of the resin and the filler result in charge storage and release of the polarization currents in the composite that have had unpredictable consequences on reliability. The objective of this effort is therefore to investigate a technique that can be used to measure the polarization in filled polymer resins and evaluate reliable molding compounds. A valuable approach to measure polarization in polymers where charge release is tied to the glass transition in the polymer is referred to as thermally stimulated depolarization current (TSDC) technique. In this dissertation a new TSDC measurement system was designed and fabricated. The instrument is an assembly of several components that are automated via a LabVIEW program that gives the user flexibility to test different dielectric compounds at high temperatures and high voltage. The temperature control is enabled through the use of dry air convection heating at a very slow rate enabling controlled heating and cooling. Charge trapping and de-trapping processes were investigated in order to obtain information on insulating polymeric composites and how to optimize it. A number of material properties were investigated. First, polarization due to charges on the filer were investigated using composites containing charged and uncharged particles using quartz and ion exchange montmorillonite silicates in an epoxy matrix. The thermally-activated charge release shows a difference in the composite characteristics and preparation. This difference indicates that the trap levels depend on the de-trapping process and on the chemical nature of the trap site. Using a numerical approach to the release spectra, a model was developed to examine through short time testing, important parameters such as glass transition temperature, residual polarization, depolarization peak, window polarization modeling and activation energy of relaxations. Second the design of mold compounds that could combine manufacturing (temperature of molding), geometric (thickness of packaging material), composition (amount and size of filler) effects was developed using a novel design of experiments approach. The statistical DOE enabled the determination of which causes should be considered when designing a mold compound that has minimal polarization both as singular variables as well as combined variables. Finally, the DOE approach was used to develop a high temperature reliable molding compound through use of combined fillers of thermally conductive and nonconductive fillers having different shapes. Through the systematic approach to developing a technique and designing a mold compound addressing the multiple impacts on reliability of packaging, the dissertation provides an approach to the design, selection, performance and durability of molding compounds.

No description available.

Ti: sapphire femtosecond laser ablation of dielectrics (fused silica and BK7 glass) and metals (Cu, Fe, Al) is presented. Results of laser -induced breakdown experiments in fused silica and BK7 glass employing 130 fs -1.7 ps, 790 nm laser pulses are reported. The fluence ablation threshold does not follow the scaling of ~ when pulses are shorter than 1 ps. Single-shot and multi-shot (130 fs pulse) ablation of selected materials are investigated with laser wavelengths of 395 nm, 790 nm, and 1300 nm. The ablation threshold is almost independent of the laser wavelength. The surface morphologies in metals after ultrashort pulse ablation are very different from dielectrics and semiconductors. The roughness of the ablated surface depends on the thermal properties of the metal target. The preliminary TEM result from Cu single crystal that was irradiated by single laser pulses shows few defects in the center region of the ablated crater. Single-shot ablation of single-crystal Fe induces much different surface features than on selected samples of poly-crystal Fe metal. / Thesis / Master of Engineering (ME)

That the dielectric constant of a substance is one of its important properties is a fact that has been very commonly taken into consideration by electrical engineers in design of apparatus and transmission lines. The importance of the dielectric constant is equally evident to the chemist working in the field of nonaqueous solutions, and Walden and others have spent a great deal of time and energy in attempting to measure the relationship of the dielectric constant of a solvent to its solvent ability, the degree of ionization of a solute dissolved in it, etc. Indeed it has become very common in chemistry to consider the dielectric constant as one of the fundamental properties of a substance. The reason for the large influence of dielectric constant is perhaps not evident at first sight. Dielectric constant may be considered as a measure of the electrical energy that can be stored in unit volume of the substance when placed in an electric field. Since energy can be considered to be the product of force times distance, we immediately look for some possibility or an electric displacement within the substance.