Global ETD Search

1	Tungsten Doped Tantalum Oxide Anodes for Electrochemical Disinfection of Wastewater Holladay, Siobhan 29 November 2012 (has links) Tungsten doped tantalum oxide films on titanium substrates were investigated for use as anodes in the electrochemical disinfection of wastewater (measured through e. coli inactivation). A sol-gel method for fabricating these films was developed that allowed for control of both the doping concentration (through volumes of tantalum and tungsten ethoxide added to the solutions), and the thickness (through the number of layers applied). The morphology and composition of these films were investigated using SEM and EDX mapping; the morphology was found to be connected to the fabrication heating procedure. Three different doping concentrations (0%, 8% and 14% tungsten by volume of added metals) were investigated for: 1) electrochemical activity; 2) long-term stability; and 3) disinfection capabilities. The 14% samples demonstrated the highest conductivity (0.06μS/cm), good long-term stability (verified using ICPMS, SEM and EDX analysis) and the best electrochemical activity for removal of e. coli (based on wastewater tests). Electrochemical disinfection Doped metal oxide 0794
2	Tungsten Doped Tantalum Oxide Anodes for Electrochemical Disinfection of Wastewater Holladay, Siobhan 29 November 2012 (has links) Tungsten doped tantalum oxide films on titanium substrates were investigated for use as anodes in the electrochemical disinfection of wastewater (measured through e. coli inactivation). A sol-gel method for fabricating these films was developed that allowed for control of both the doping concentration (through volumes of tantalum and tungsten ethoxide added to the solutions), and the thickness (through the number of layers applied). The morphology and composition of these films were investigated using SEM and EDX mapping; the morphology was found to be connected to the fabrication heating procedure. Three different doping concentrations (0%, 8% and 14% tungsten by volume of added metals) were investigated for: 1) electrochemical activity; 2) long-term stability; and 3) disinfection capabilities. The 14% samples demonstrated the highest conductivity (0.06μS/cm), good long-term stability (verified using ICPMS, SEM and EDX analysis) and the best electrochemical activity for removal of e. coli (based on wastewater tests). Electrochemical disinfection Doped metal oxide 0794
3	HeT-SiC-05International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor DevicesApril 26 to May 1, 2005,Hotel Erbgericht Krippen / Germany- Selected Contributions - Skorupa, Wolfgang, Brauer, Gerhard 31 March 2010 (has links) (PDF) This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too. beta-silicon carbide biocompatibility biosensor doped metal oxide epitaxy flash lamp annealing heterostructure high-temperature device hotplate ion implantation luminescence magnetic ion misfit defect pulsed laser deposition resonator sensor silicon carbide simulation stress surface melting zinc oxide
4	HeT-SiC-05International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor DevicesApril 26 to May 1, 2005,Hotel Erbgericht Krippen / Germany- Selected Contributions - Skorupa, Wolfgang, Brauer, Gerhard January 2005 (has links) This report collects selected outstanding scientific and technological results obtained within the frame of the European project "FLASiC" (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.

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