Este trabalho apresenta um estudo sobre a técnica de dopagem em agregados química e mineralogicamente deficientes e tem como objetivo demonstrar que se houver a dopagem de agregados, ainda que haja o limitante das respectivas resistências destes materiais, eles poderão vir a ser utilizados em grandes obras com pleno êxito. A técnica apresenta-se como uma solução para a problemática de disponibilidade de bens minerais, atualmente em declínio em virtude de problemas de sustentabilidade ambiental, de zoneamentos restritivos e de usos competitivos do solo, tornando preocupantes as perspectivas de garantia de suprimento futuro. Por meio da impregnação inicial do agregado com aglomerantes de alto desempenho foi possível modificar sua textura, estabelecer ponte de ligação entre ele e a matriz do concreto e criar carapaça de proteção e reforço, atingindo-se fc28 = 60 MPa nos concretos lateríticos dopados. A eficiência da técnica foi avaliada comparando-se propriedades mecânicas e microestruturais de concretos não dopados (referência) e dopados. Para tanto, foram realizados ensaios de resistências à compressão, à tração por compressão diametral e à tração na flexão, absorção de água por imersão e microscopia eletrônica de varredura. Os resultados demonstraram ser possível melhorar agregados graúdos deficientes por meio da dopagem e obter concretos de comportamento comparável ou até superior a concretos usualmente considerados como de bom desempenho. Ainda que seja um estudo inicial, a técnica de dopagem revela-se promissora, com expectativa de uso em agregados normalmente considerados inadequados para concretos estruturais. / This thesis presents a study on the doping technique in aggregates disabled chemical and mineralogical and aims to demonstrate that with the technique, although there is a resistances limitation, these aggregates could be used with success in large projects. The doping technique is presented as a solution to the minerals availability problem, currently declining due to environmental sustainability problems, restrictive zoning and land competing uses, fact that worries the future supply security. By impregnating initial of the aggregate with high performance binders was possible to modify its texture, to establish a bridge between it and the concrete matrix and create shell protection and enhancement, reaching fc28 = 60 MPa in lateritic doped concrete. Mechanical and microstructural properties of reference concretes and doped concretes were compared to evaluate the doping efficiency. Testing of compressive strength, tensile strength by diametrical compression and tensile strength in bending, water absorption by immersion and scanning electron microscopy were performed. The results indicate that deficient coarse aggregates can be improved by the doping technique and it is possible to obtain specific behavior comparable or even superior to concrete usually considered to be of good performance. Although it is an initial study, the doping technique seems to be promising, with expected use in aggregates considered unsuitable for structural concrete.

Em Janeiro de 2001, um supercondutor totalmente novo foi apresentado por Nagamatsu, o diboreto de magnésio (MgB2), com uma temperatura crítica, Tc, surpreendentemente alta de 39 K. Atualmente, o MgB2 é considerado o condutor de alto campo do futuro. É claramente aceito que os valores excepcionais de altos campos magnético crítico superior, Hc2, (Hc2 + (0) ? 40 T para Tc ? 35 - 40 K) mostram que o MgB2 é capaz de substituir o Nb3Sn (Hc2 (0) ? 30 T para Tc ? 18 K) como a escolha para aplicações de altos campos magnéticos. Neste trabalho foram preparadas pastilhas supercondutoras de MgB2 utilizando adições de diboretos metálicos de ZrB2, TaB2, VB2 e AlB2 e adições simultâneas de diboretos metálicos e fontes diversas de carbono, como carbeto de silício, grafite e nanotubos de carbono. O objetivo da adição desses novos elementos foi criar mecanismos para melhorar a capacidade de transporte do material, tanto pela dopagem substitucional como pela geração de defeitos na matriz supercondutora, atuando como eficientes centros de aprisionamento das linhas de fluxo magnético. Para isso foram utilizados dois diferentes métodos de preparação de amostras, insitu e ex-situ. O método de preparação in-situ seguiu padrões convencionais, como mistura em moinho de bola e tratamento térmico em fluxo de argônio. Para a preparação das amostras utilizando-se o método ex-situ foram utilizadas técnicas mais sofisticadas, como moagem de alta energia e tratamento térmico em altas pressões (Hot Isostatic Press, HIP). Em geral, as adições dos diboretos metálicos melhoraram a capacidade de transporte do material em baixos campos, as fontes de carbono aumentaram os valores de densidade de corrente crítica em altos campos magnéticos, enquanto que as combinações das duas adições melhoram a capacidade de transporte, para algumas amostras, em toda a faixa de campo magnético medida. / In January 2001, a new superconductor was presented by Nagamatsu, the magnesium diboride (MgB2), with a critical temperature, Tc, extremely high of 39 K. MgB2 is considered the high field conductor of the future. The exceptional high values of upper critical magnetic field, Hc2, (Hc2 + (0) ? 40 T for Tc ? 35 - 40 K) show that the MgB2 is able to replace the Nb3Sn (Hc2 (0) ? 30 T for Tc ? 18 K) as the choice for applications in high magnetic fields. In this work, superconducting pellets of MgB2 were prepared with addition of other metal diborides of ZrB2, TaB2, VB2, and AlB2, and simultaneous additions of metal diborides and different carbon sources, such as silicon carbide, graphite and carbon nanotubes. The objective of these additions of new elements was to create mechanisms to improve the transport capacity of the material, by substitutional doping and by generation of defects in the superconducting matrix, acting as effective pinning centers of magnetic flux lines. Two different methods for sample preparation were used, the in-situ and the ex-situ method. The in-situ preparation method followed conventional standards, such as powder mixing in a ball mill and heat treatment in argon flow. The ex-situ preparation method used more sophisticated techniques, such as high energy ball milling and heat treatment under high pressures (Hot Isostatic Press, HIP). In general, the additions of metal diborides improved the transport capacity of the material at low fields, the carbon sources increased the critical current density at high magnetic fields, whereas the combination of these two additions improved the transport capacity, for some samples, in all range of applied magnetic field.

Neste trabalho, estudamos as propriedades eletrônicas e estruturais de super-redes InP/In IND. 0.53 Ga IND. 0.47As dopadas fortemente com Si (densidade equivalente no bulk superior a 4.4 x 10 POT. 18cm POT. -3). O espectro de Fourier das oscilações de Shubnikov-de Haas apresenta um dubleto característico de elétrons que populam uma minibanda de energia, assim como uma freqüência de oscilação associada a elétrons confinados em uma camada superficial bidimensional (elétrons de Tamm). Verificamos que, para descrever o espectro de energia dos elétrons da minibanda, o modelo de Kronig-Penney é em geral suficiente porém, para descrever adequadamente os estados de Tamm é necessário recorrer a um cálculo auto-consistente completo. A boa resolução do dubleto associado aos elétrons que populam a minibanda de energia permitiu extrair as mobilidades quânticas dos elétrons associados aos hodógrafos extremais (\"cintura\" e \"pescoço\") da mini-superfície de Fermi. O tratamento de dados foi efetuado com a utilização de procedimentos especialmente desenvolvidos, que apresentam a vantagem de não necessitar da utilização de filtros de Fourier sofisticados. A detecção do estado de Tamm nas oscilações de Shubnikov-de Haas é inétida por se tratar de estados de Tamm degenerados. Por ser a mobilidade quântica dos elétrons de Tamm quase duas vezes maior do que a mesma mobilidade para os elétrons da minibanda, em campos magnéticos fracos as oscilações de Shubnikov-de Haas são dominadas pelos elétrons de Tamm, apesar da quantidade de elétrons de Tamm corresponder a apenas em torno de 10% do total de portadores livres em nossas amostras. As super-redes InP/In IND. 0.53 Ga IND. 0.47As:Si apresentam, também, grande redução de portadores livres com a diminuição do período das super-redes. A perda de portadores livres é de 60% quando o período é diminuído em 20%. Esta redução está correlacionada com a quantidade de átomos de ) dopantes que recai na camada interfacial de InAs IND. X P IND. 1-X que se forma quando InP é depositado sobre In IND. 0.53 Ga IND. 0.47As. Um estudo de um conjunto de 8 amostras nos permitiu estimar que a espessura da camada interfacial é de aproximadamente 20 ANGSTRONS. Os dados experimentais indicam que os átomos de Si que recaem nas camadas interfaciais, ao invés de formarem doadores rasos, formam centros profundos com energia de ativação superior a 50 meV. / In this work the electronic and structural properties of InP/In IND. 0.53 Ga IND. 0.47As superlattices heavily doped with Si (bulk equivalent density greater than 4.4 x 10 POT. 18cm POT. -3) were studied. The Fourier spectrum of the Shubnikov-de Haas oscillations presents a double peak characteristic of electrons which populate the first miniband of the energy spectrum, and an additional peak associated to electrons confined in a two-dimensional surface layer (Tamm electrons). We verified that the Kronig-Penney model is, in general, a good approximation to describe the energy spectrum of electrons in the miniband. However, to describe adequately the Tamm states, it is necessary to resort to a full self-consistent calculation of the energy levels in the effective mass approximation. The well-resolved doublet associated to the electrons in the miniband allowed us to extract the quantum mobilities associated to both extremal orbits of the Fermi mini-surface (belly and neck). The data analysis was done by using specially developed procedures, which have the advantage of not requiring the use of sophisticated Fourier filters. The detection of Tamm states throught Shubnikov-de Haas oscillations was done for the first time in superlattices in which the Tammm states are degenerate. On account of the fact that the quantum mobility of the Tamm electrons is about a factor of two greater than the quantum mobility of the miniband electrons, the Shubnikov-de Haas oscillations are dominated by electrons from the Tamm states, especially at weak magnetic fields, despite of the fact that the amount of Tamm electrons is only about 10% of the total amount of free carriers in our sample. The InP/In IND. 0.53 Ga IND. 0.47As:Si superlattices also display a strong reduction in the amount of free carriers when the period of the superlattice decreases. This reduction reaches 60% when the superlatticess period is decreased by only 20%. This reduction correlates with the amount of doping atoms that fall into the interfacial layer InAs IND. X P IND. 1-X which is formed when InP is grown on In IND. 0.53 Ga IND. 0.47As. A study of a set of 8 samples allowed us to estimate that the interfacial layer is approximately 20 ANGSTRONS thick. The experimental data indicate that the Si atoms which fall into the interfacial form deep levels with an activation energy larger than 50 meV.

This diploma thesis investigates the extent to which athletes competing in 21st century world athletic competitions, ie OH and MS in athletics, violated anti-doping rules. The main aim is to find out which disciplines at the world's top athletics competitions, ie World Championships in Athletics and the Olympic Games, most frequently appeared in the 21st Century of Doping, and from which countries were athletes who contributed most to the use of doping. The secondary objective is to find out which prohibited substances or methods were most used in the athletic world competitions under study.

The doping of rhenium into molybdenum disulfide was achieved by Aerosol Assisted Chemical Vapour Deposition (AACVD) from single source precursors. Rhenium can be studied as a model for immobilization of radioactive technetium-99 (99Tc) in MoS2. The metals Mo(IV), Re(IV), and Tc(IV) have similar ionic radii 0.65, 0.63 and 0.65 Å respectively, and their Shannon-Prewitt crystal radii 0.79, 0.77 and 0.79 Å Hence demonstrating the potential storage of nuclear waste in geologic like formations in of groundwater may be possible. The interaction between the nuclear waste forms and groundwater, which could lead to release and transport low concentrations or vapour of radionuclides to the near field, as a result, decomposition of engineered barriers. The molecular precursors [Mo(S2CNEt2)4], [Re3(μ-SiPr)3(SiPr)6], [Re(S2CC6H5)(S3CC6H5)2], and [Re2(μ-S)2(S2CNEt2)4] have been used to deposit Re-doped MoS2 thin films. Mo-doped ReS2 alloyed, polycrystalline thin films were synthesised using [Re(S2CC6H5)(S3CC6H5)2], [Mo(S2CNEt2)4] via AACVD, adding with a low concentration of Mo source for the first time . We reported as well a new way for production of ultrathin ReS2 nanosheets by coupling bottom up processing AACVD with top-down LPE. This is important in synthetic pathways for the production of rare transition dichalcogenide, also, our processing methodology is potentially scalable and thus could be a way to commercial exploitation. Characterisation of produced materials performed by pXRD, SEM, TEM, STEM, EDX, ICP and Raman spectroscopy.

CoordenaÃÃo de AperfeiÃoamento de Pessoal de NÃvel Superior / CerÃmica Aurivillius sÃo conhecidas por sua excelente resistÃncia à fadiga e a sua alta temperatura de Curie, a qual apresenta cÃlula unitÃria ortorrÃmbica. A cerÃmica a ser estudada, SrBi2Nb2O9 (SBN), à matÃria-prima potencial na fabricaÃÃo de memÃrias ferroelÃtricas, com polarizaÃÃo espontÃnea e bons coeficientes piezelÃtricos. Dentro deste grupo cerÃmico, o SrBi2Nb2O9 (SBN) à o material com menor estrutura octaÃdrica distorcida. Apesar disto, o SBN sofre de perda dielÃtrica elevada, devido à evaporaÃÃo de Ãxido de bismuto durante a preparaÃÃo, vindo a limitar sua utilizaÃÃo. A ativaÃÃo mecÃnica usada foi a de moinho planetÃrio, que nos permite calcinar o composto por temperaturas mais baixas que as geralmente apresentadas na literatura. ApÃs a calcinaÃÃo, moemos por mais duas horas, e obtemos um pà de boa densidade e reduzida temperatura de sinterizaÃÃo. Este fato previne a perda de elementos volÃteis (Pb ou Bi) e controla o crescimento do grÃo que à produzido quando a alta temperatura à necessÃria para a obtenÃÃo dessa cerÃmica. No presente trabalho, esta cerÃmica Aurivillius serà estudada em suas propriedades estruturais e dielÃtricas com dopagem de Ãxido de lantÃnio, de bismuto e de chumbo, em diversas porcentagens. Adicionalmente, houve a necessidade de um estudo comparativo com respeito a diferentes tipos de ligantes, e os testes obedeceram Ãs dopagens mencionadas acima. Os resultados foram obtidos pelo mÃtodo Hakki & Coleman, pela Espectroscopia de ImpedÃncia e medidas de RadiofreqÃÃncia, para a caracterizaÃÃo elÃtrica. DifraÃÃo de Raios-X, juntamente com o Refinamento Rietveld, Espectroscopia Raman e de Infravermelho, para anÃlise estrutural, dentre outras medidas e mÃtodos. / Aurivillius ceramic are know by is excellent resistence to high use and itÂs high Curie temperature, in wich it presents unicell ortorrÃmbic. The ceramic to be study SrBi2Nb2O9 (SBN), is a potential prime-mater in the production of ironelectric memories with sponteneous polarization and good piezelectric coeficient. Within this ceramic group, SrBi2Nb2O9 (SBN) is the material with less twisted octaÃdric structure. Even so, SBN, have high loss of dielectric, due to the evaporation of bismut oxide during preparation, inposing a limit to is use. The mechanical activation used was of a planetarium will, that allows us to calcinate the compost by very low temperatures that are presented in literature. After the calcination, we will it for two more hours and have dust that have good density and low sinterization temperature. That fact privine us the lost of volatile elements ( Pb or Bi ) and controls the grow of the seed wich is produced when high Temperature is needed to obtain this ceramic . In the present work, this Aurivillius ceramic wil be studyed in is dielectric and structure properties with dopage of lantÃnium oxide, lead oxide and bismut oxide, on different percentages. In addiction there was necessety of a comparative study, regarding the different types of leagues and tests obay the dopage already menttionated. The results were obtained by the Hakki & Coleman method by the Impendence Espectroscopic and radiofrequense mesures, to the electric caracterization . X-rays Defraction with Rictveld refiament , Raman and infrared espectroscopic, to structural analises , within other mesures and methods .

Em Janeiro de 2001, um supercondutor totalmente novo foi apresentado por Nagamatsu, o diboreto de magnésio (MgB2), com uma temperatura crítica, Tc, surpreendentemente alta de 39 K. Atualmente, o MgB2 é considerado o condutor de alto campo do futuro. É claramente aceito que os valores excepcionais de altos campos magnético crítico superior, Hc2, (Hc2 + (0) ? 40 T para Tc ? 35 - 40 K) mostram que o MgB2 é capaz de substituir o Nb3Sn (Hc2 (0) ? 30 T para Tc ? 18 K) como a escolha para aplicações de altos campos magnéticos. Neste trabalho foram preparadas pastilhas supercondutoras de MgB2 utilizando adições de diboretos metálicos de ZrB2, TaB2, VB2 e AlB2 e adições simultâneas de diboretos metálicos e fontes diversas de carbono, como carbeto de silício, grafite e nanotubos de carbono. O objetivo da adição desses novos elementos foi criar mecanismos para melhorar a capacidade de transporte do material, tanto pela dopagem substitucional como pela geração de defeitos na matriz supercondutora, atuando como eficientes centros de aprisionamento das linhas de fluxo magnético. Para isso foram utilizados dois diferentes métodos de preparação de amostras, insitu e ex-situ. O método de preparação in-situ seguiu padrões convencionais, como mistura em moinho de bola e tratamento térmico em fluxo de argônio. Para a preparação das amostras utilizando-se o método ex-situ foram utilizadas técnicas mais sofisticadas, como moagem de alta energia e tratamento térmico em altas pressões (Hot Isostatic Press, HIP). Em geral, as adições dos diboretos metálicos melhoraram a capacidade de transporte do material em baixos campos, as fontes de carbono aumentaram os valores de densidade de corrente crítica em altos campos magnéticos, enquanto que as combinações das duas adições melhoram a capacidade de transporte, para algumas amostras, em toda a faixa de campo magnético medida. / In January 2001, a new superconductor was presented by Nagamatsu, the magnesium diboride (MgB2), with a critical temperature, Tc, extremely high of 39 K. MgB2 is considered the high field conductor of the future. The exceptional high values of upper critical magnetic field, Hc2, (Hc2 + (0) ? 40 T for Tc ? 35 - 40 K) show that the MgB2 is able to replace the Nb3Sn (Hc2 (0) ? 30 T for Tc ? 18 K) as the choice for applications in high magnetic fields. In this work, superconducting pellets of MgB2 were prepared with addition of other metal diborides of ZrB2, TaB2, VB2, and AlB2, and simultaneous additions of metal diborides and different carbon sources, such as silicon carbide, graphite and carbon nanotubes. The objective of these additions of new elements was to create mechanisms to improve the transport capacity of the material, by substitutional doping and by generation of defects in the superconducting matrix, acting as effective pinning centers of magnetic flux lines. Two different methods for sample preparation were used, the in-situ and the ex-situ method. The in-situ preparation method followed conventional standards, such as powder mixing in a ball mill and heat treatment in argon flow. The ex-situ preparation method used more sophisticated techniques, such as high energy ball milling and heat treatment under high pressures (Hot Isostatic Press, HIP). In general, the additions of metal diborides improved the transport capacity of the material at low fields, the carbon sources increased the critical current density at high magnetic fields, whereas the combination of these two additions improved the transport capacity, for some samples, in all range of applied magnetic field.

Submitted by Rosivalda Pereira (mrs.pereira@ufma.br) on 2017-05-05T20:54:58Z No. of bitstreams: 1 JohnnySousa.pdf: 5039364 bytes, checksum: 4ccdef1692ea6e61c3afd0e3c56d979f (MD5) / Made available in DSpace on 2017-05-05T20:54:58Z (GMT). No. of bitstreams: 1 JohnnySousa.pdf: 5039364 bytes, checksum: 4ccdef1692ea6e61c3afd0e3c56d979f (MD5) Previous issue date: 2016-12-12 / In this work a study on the influence of silver (Ag+ ) in the crystal structure of the crystal β - alanine. The introduction of doping in a crystal lattice can change its physical properties and its growth habit. These changes in the structure can optimize the technological applications of these crystals. The crystals of β - alanine and pure β - alanine doped with silver ions (Ag +) were grown by the method of slow evaporation of solvent resulting in good quality crystals. Characterization was carried measured by X-ray diffraction, thermogravimetry, differential thermal analysis, differential scanning calorimetry and Raman scattering at room temperature and at high temperatures. After twenty days of rest, we obtained the pure and doped crystal growth in a solution with pH 6.2 and 6.8. With the diffractogram of the pure and doped and analyzes the Rietveld method, it was found that at room temperature the β -pure Alanine and doped with Ag + crystallize in the space group of orthorhombic structure P, b, c, a (61) , α, β, γ = 90 °. The refinement of quality parameters were satisfactory, with RWP = 14.32% and S = 1.23 for the pure sample and RWP = 18.16% and S = 1.38. The thermal analysis DTA and TGA showed that pure sample has thermal stability to 180 ° C and a weight loss of 80% between 180ºC and 332ºC with first endothermic event at 202.16 °C. And for the doped mass loss percentage is maintained, but the sample showed a lower thermal stability to 165 ° C first endothermic event at 193.49 ° C. DSC analysis revealed that pure sample undergoes fusion 206.49 ° C and 196.02 ° C in sample doped and that there is no thermal event that features a phase transition before melting. The Raman scattering study was conducted with temperatures in three spectral regions with gradually increasing temperature (40 ° C to 170 ° C). The first 40 cm -1 to 300 cm -1 , corresponding to modes of external vibration the second at 500 cm-1 and 1500 cm-1 and the third at 2800 cm-1 and 3100 cm -1 que are related to the vibration modes internal. The measurements showed that there was a weakening of the intermolecular bonds in the crystal of β - alanine doped with Ag+ ions, and that all the dynamic study is being described by two bands of lower power modes of the network once. Thus, the crystals have good transparency and optical studies can be applied in non-linear optics. / Neste trabalho foi realizado um estudo sobre a influência dos íons (Ag+) na estrutura cristalina do cristal de β – alanina. A introdução de dopantes em uma rede cristalina pode alterar suas propriedades físicas ou seu hábito de crescimento. Estas mudanças na estrutura podem otimizar as aplicações tecnológicas destes cristais. Os cristais de β – alanina pura e β – alanina dopada com íons prata (Ag+) foram crescidos pelo método da evaporação lenta do solvente resultando em cristais de boa qualidade. Medidas de caracterização por difração de raios-X, termogravimetria, análise térmica diferencial, calorimetria exploratória diferencial e espalhamento Raman à temperatura ambiente e a altas temperaturas. Após vinte dias de repouso, obteve-se os cristais puro e dopado em uma solução de crescimento com pH igual a 6.2 e 6.8. Com o difratograma da amostra pura e dopada e as análises do método Rietveld, constatou-se que à temperatura ambiente a β – alanina pura e dopada com Ag+ cristalizam-se numa estrutura ortorrômbica de grupo espacial P,b,c,a (61) , α, β, γ = 90°. Os parâmetros de qualidade do refinamento foram satisfatórios, com Rwp = 14,32% e S = 1,23 para a amostra pura e Rwp = 18,16% e S = 1,38. As análises térmicas de TGA e DTA mostraram que a amostra pura apresenta uma estabilidade térmica até 180ºC e uma perda de massa de 80% entre 180 ºC e 332ºC com primeiro evento endotérmico em 202,16 ºC. E para a amostra dopada os percentuais de perda de massa são mantidos, porém a amostra apresentou uma estabilidade térmica menor, 165ºC com primeiro evento endotérmico em 193,49 ºC. As analises de DSC revelaram que a amostra pura sofre fusão em 206,49 ºC e a amostra dopada em 196,02 ºC e que não há nenhum evento térmico que caracterize uma transição de fase antes da fusão. O estudo de espalhamento Raman com altas temperaturas foi realizado em três regiões espectrais com elevação gradual da temperatura (40°C a 170°C). A primeira em 40 cm-1 a 300 cm-1 , correspondente aos modos de vibração externa a segunda em 500 cm-1 e 1500 cm-1 e a terceira em 2800 cm-1 e 3100 cm-1 que estão relacionadas aos modos de vibração interna. As medidas mostraram que houve um enfraquecimento nas ligações intermoleculares do cristal de β – alanina dopada com íons Ag+ e que toda a dinâmica do estudo esta sendo descrita pelas duas bandas de menor energia dos modos de rede. Assim, os cristais possuem boa transparência e com estudos óticos podem ser aplicados na optica não linear.

A redistribuição e ativação elétrica dos dopantes tipo n (As e Sb) e tipo p (Ga e In) em Si com excesso de vacâncias foram analisadas. As vacâncias foram geradas por implantação iônica de altas doses de oxigênio ou nitrogênio em alta temperatura, de acordo com procedimentos já estudados. Em seguida foram implantados os dopantes com dose de 5x1014 cm-2 a 20 keV na região rica em vacâncias. Dopagens idênticas foram realizadas em amostras de Si sem vacâncias e em SIMOX. Em seguida foram feitos recozimentos a 1000ºC por 10 s ou 15 min. Os perfis atômicos dos dopantes foram medidos com Medium Energy Ion Scattering e os perfis dos dopantes ativados, com Hall diferencial. A redistribuição e as propriedades elétricas de cada um dos dopantes no Si sem vacâncias foram bastante similares às observadas no SIMOX, porém várias diferenças foram observadas em relação às amostras com excesso de vacâncias. As vacâncias reduziram a ativação elétrica do As e do Sb, mas proporcionaram maior estabilidade da ativação após recozimentos longos. A redistribuição destes dopantes foi infuenciada pelo íon usado na geração das vacâncias, ou seja, nitrogênio ou oxigênio. O oxigênio proporcionou maior dose retida de As e o nitrogênio, maior dose retida de Sb. Já para o Ga e o In, as vacâncias tiveram papel fundamental na sua redistribuição, diminuindo a difusão para fora das amostras e garantindo maior dose retida. A ativação elétrica do Ga e especialmente a do In foram baixas, onde observamos forte influência do íon pré-implantado, principalmente o oxigênio. / The redistribution and electrical activation of n type (As and Sb) and p type (Ga and In) dopants in Si with excess vacancy concentration were analyzed. The vacancies were formed by high dose ion implantation of oxygen or nitrogen at high temperature, following previously studied procedures. Dopants were implanted to a dose of 5x1014 cm-2 at 20 keV in the vacancy rich regions of the samples. Identical doping implantations were performed in bulk Si and SIMOX. Samples were then submitted to thermal annealing at 1000ºC for 10 s or 15 min. The dopants atomic profiles were obtained by Medium Energy Ion Scattering and the active dopant profiles, by differential Hall measurements. The redistribution and the electrical properties of each dopant in bulk Si were similar to those observed in SIMOX, but several differences were observed in the vacancy-rich samples. Vacancies reduced the electrical activation of As and Sb, although the activation was maintained stable after long annealing times. The redistribution of these dopants was, otherwise, dominated by the ion used in the vacancy generation, i.e., nitrogen or oxygen. The presence of oxygen resulted in larger As retained dose, while the presence of nitrogen, in larger Sb retained dose. Regarding the p type dopants, Ga and In, the vacancies played an important role in their redistribution, reducing their out-diffusion and allowing larger retained doses. Ga and especially In electrical activation was low, where strong influence of the pre-implanted ions was observed, especially oxygen.

This study reports on the synthesis of N-doped carbon spheres (N-CSs) by a simple synthetic procedure. A horizontal CVD type reactor was used to synthesize N-CSs from pyridine. Depending on the dilution of the pyridine with toluene, a nitrogen content of 0.13-5 mol % was obtained. The use of a vertical CVD reactor gave N-CSs with a N-content of 0.19-3 mol % when an ammonium solution and acetylene were used as reactants. The diameters of carbon spheres were found to be in the range of 40 nm to 1000 nm for both CVD reactors. The diameter can be controlled by varying the flow rate, temperature, time, concentration and the reactor type. The samples were characterized by TEM, HRTEM, elemental analysis, Raman spectroscopy, TGA, PXRD and ESR. We have demonstrated that unsubstituted thiophene can be polymerized by Fe3+-catalyzed oxidative polymerization. The average particle size was about 50 nm, within a narrow particlesize distribution. The undoped carbon spheres (CSs) were reacted with thiophene to give polymer/carbon composites containing polythiophene and carbon nanospheres via chemical oxidative polymerization reaction. Polythiophene molecules were either chemically bonded or physically adsorbed to the surface of carbon spheres. The microstructure and properties of the two types of composites were compared. The thermogravimetric analysis data confirmed that the presence of CSs in the polymer\carbon composites is responsible for the higher thermal stability of the composite material in comparison with pristine polythiophene. The FTIR analysis showed that covalent functionalized nanocomposites exhibit a high intensity of a C-S bond This study reports on the synthesis of N-doped carbon spheres (N-CSs) by a simple synthetic procedure. A horizontal CVD type reactor was used to synthesize N-CSs from pyridine. Depending on the dilution of the pyridine with toluene, a nitrogen content of 0.13-5 mol % was obtained. The use of a vertical CVD reactor gave N-CSs with a N-content of 0.19-3 mol % when an ammonium solution and acetylene were used as reactants. The diameters of carbon spheres were found to be in the range of 40 nm to 1000 nm for both CVD reactors. The diameter can be controlled by varying the flow rate, temperature, time, concentration and the reactor type. The samples were characterized by TEM, HRTEM, elemental analysis, Raman spectroscopy, TGA, PXRD and ESR. We have demonstrated that unsubstituted thiophene can be polymerized by Fe3+-catalyzed oxidative polymerization. The average particle size was about 50 nm, within a narrow particlesize distribution. The undoped carbon spheres (CSs) were reacted with thiophene to give polymer/carbon composites containing polythiophene and carbon nanospheres via chemical oxidative polymerization reaction. Polythiophene molecules were either chemically bonded or physically adsorbed to the surface of carbon spheres. The microstructure and properties of the two types of composites were compared. The thermogravimetric analysis data confirmed that the presence of CSs in the polymer\carbon composites is responsible for the higher thermal stability of the composite material in comparison with pristine polythiophene. The FTIR analysis showed that covalent functionalized nanocomposites exhibit a high intensity of a C-S bondThis study reports on the synthesis of N-doped carbon spheres (N-CSs) by a simple synthetic procedure. A horizontal CVD type reactor was used to synthesize N-CSs from pyridine. Depending on the dilution of the pyridine with toluene, a nitrogen content of 0.13-5 mol % was obtained. The use of a vertical CVD reactor gave N-CSs with a N-content of 0.19-3 mol % when an ammonium solution and acetylene were used as reactants. The diameters of carbon spheres were found to be in the range of 40 nm to 1000 nm for both CVD reactors. The diameter can be controlled by varying the flow rate, temperature, time, concentration and the reactor type. The samples were characterized by TEM, HRTEM, elemental analysis, Raman spectroscopy, TGA, PXRD and ESR. We have demonstrated that unsubstituted thiophene can be polymerized by Fe3+-catalyzed oxidative polymerization. The average particle size was about 50 nm, within a narrow particlesize distribution. The undoped carbon spheres (CSs) were reacted with thiophene to give polymer/carbon composites containing polythiophene and carbon nanospheres via chemical oxidative polymerization reaction. Polythiophene molecules were either chemically bonded or physically adsorbed to the surface of carbon spheres. The microstructure and properties of the two types of composites were compared. The thermogravimetric analysis data confirmed that the presence of CSs in the polymer\carbon composites is responsible for the higher thermal stability of the composite material in comparison with pristine polythiophene. The FTIR analysis showed that covalent functionalized nanocomposites exhibit a high intensity of a C-S bond at 695 cm-1 , which is not observed in the noncovalent functionalized nanocomposites