Economic growth is the increase in the inflation-adjusted market value of the goods and services produced by an economy over time. The total output is the quantity of goods or servicesproduced in a given time period within a country. Sweden was affected by two crises during the period 2000-2010: a dot-com bubble and a financial crisis. How did these two crises affect the economic growth?     The changes of domestic output can be separated into four parts: changes in intermediate demand, final domestic demand, export demand and import substitution. The main purpose of this article is to analyze the economic growth during the period 2000-2010, with focus on the dot-com bubble in the beginning of the period 2000-2005, and the financial crisis at the end of the period 2005-2010. The methodology to be used is the structural decomposition method.     This investigation shows that the main contributions to the Swedish total domestic output increase in both the period 2000-2005 and the period 2005-2010 were the effect of domestic demand. In the period 2005-2010, financial crisis weakened the effect of export. The output of the primary sector went from a negative change into a positive, explained mainly by strong export expansion. In the secondary sector, export had most effect in the period 2000-2005. Nevertheless, domestic demand and import ratio had more effect during the financial crisis period. Lastly, in the tertiary sector, domestic demand can mainly explain the output growth in the whole period 2000-2010.

The construction of a high-resolution optical microscope system for micro-photoluminescence (µ-PL) spectroscopy is described, and a range of time-integrated and time-resolved experimental work on single InGaN quantum dots (QDs) is presented. Time-integrated measurements demonstrate the existence of InGaN QDs in three different samples via the presence of sharp exciton recombination lines in the µ-PL spectra. The narrowest peaks display a linewidth Γ of ~230 µeV, implying a decoherence time T2 ≥5.7 ps. Time-resolved measurements on exciton recombination lines from single self-assembled InGaN QDs reveal typical lifetimes of ~2.0 ns (which decrease with increasing temperature), while typical lifetimes for excitons in single selectively-grown micropyramidal InGaN QDs are found to be ~0.4 ns. The shorter exciton recombination lifetime in selectively-grown QDs is believed to be due to a stronger coupling of these QDs to the underlying quantum well. Temporal fluctuations (on a timescale of seconds) in the energy, intensity and FWHM of µ-PL peaks arising from the recombination of excitons in single self-assembled InGaN QDs are observed. These are attributed to transient Stark shifts induced by a fluctuating local charge distribution as carriers become trapped in defect states in the vicinity of the QDs. Time-integrated power-dependent measurements are used to demonstrate the presence of biexciton states in single self-assembled InGaN QDs. The exciton–biexciton energy splitting is found to be ~41 meV, in agreement with values predicted by theoretical calculations. Time-resolved studies of the biexciton and exciton decay curves reveal a coupling as the exciton population is refilled by biexciton decays. The biexciton lifetime is found to be ~1.4 ns, compared to an exciton lifetime of ~1.0 ns. Lateral electric fields are applied to a single self-assembled InGaN QD using aluminium electrodes lithographically defined on the sample surface. Application of fields of the order of ~0.17 MVcm-1 is found to cause both a red-shift and a reduction in the intensity of the exciton recombination peak in the µ-PL spectrum.

Childhood maltreatment increases risk for Posttraumatic Stress Disorder (PTSD). Maladaptive patterns of attention to threat-related stimuli warrant examination as possible contributing risk factors. It remains unclear whether persistent threat-processing biases are differentially apparent in adults who were maltreated as children and either did, or did not, develop later PTSD. The present study examined associations among attention bias, childhood maltreatment, and PTSD in adults. We hypothesized that attentional bias toward threat significantly mediates associations between childhood maltreatment and adult PTSD symptoms. 183 adults with and without childhood maltreatment histories participated in this study, which involved completion of a range of clinical measures; attention bias was measured by the Dot Probe task. We found that attention bias toward happy faces partially mediated the relationship between childhood maltreatment and PTSD avoidance and numbing symptoms. Childhood maltreatment, happy face attention bias, and perceived racially discriminative experiences all accounted for significant variance in PTSD symptoms.

In this thesis, we demonstrate a new type of resonant, nonlinear, light-matter interaction facilitated by the unique electromagnetic vacuum density-of-state (DOS) structure of Photonic Band Gap (PBG) materials. Strong light localization inside PBG waveguides allows extremely strong coupling between laser fields and embedded two-level quantum dots (QD). The resulting Mollow splitting is large enough to traverse the precipitous DOS jump created by a waveguide mode cutoff. This allows the QD Bloch vector to sense the non-smoothness of the vacuum structure and evolve in novel ways that are forbidden in free space. These unusual strong-coupling effects are described using a "vacuum structure term" of the Bloch equation, combined with field-dependent relaxation rates experienced by the QD Bloch vector. This leads to alternation between coherent evolution and enhanced relaxation. As a result, dynamic high-contrast switching of QD populations can be realized with a single beam of picosecond pulses. During enhanced relaxation to a slightly inverted steady state at the pulse peak, the Bloch vector rapidly switches from anti-parallel to parallel alignment with the pulse torque vector. This then leads to a highly inverted state through subsequent coherent "adiabatic following" near the pulse tail, providing a robust mechanism for picosecond, femto-Joule all-optical switching. The simultaneous input of a second, weaker (signal) driving beam at a different frequency on top of the stronger (holding) beam enables rich modulation effects and unprecedented coherent control over the QD population. This occurs through resonant coupling of the signal pulse with the Mollow sideband transitions created by the holding pulse, leading to either augmentation or negation of the final QD population achieved by the holding pulse alone. This effect is applied to ultrafast all-optical logic AND, OR and NOT gates in the presence of significant (0.1 THz) nonradiative dephasing and (about 1%) inhomogeneous broadening. Further numerical studies of pulse evolutions inside the proposed devices demonstrate satisfactory population contrast within a PBG waveguide length of about 10 micro meter. These results provide the building blocks for low-power, ultrafast, multi-wavelength channel, on-chip, all-optical computing.

Quantum Dot (QD) nanobeacons distinguish themselves from molecular beacons with the promise of non-linear activation, tunability, and multi-functionality. These unique features make them highly attractive for cancer detection imaging with opportunities for increased signal-to-background ratio and tunable sensitivity. In this thesis, a nanobeacon was designed to target matrix metalloproteinase-7 (MMP-7), known to be over-expressed by a wide array of tumours. The nanobeacon is normally dark until specifically activated by MMP-7. The overall design strategy links single QDs to multiple energy acceptors by GPLGLARK peptides that can be cleaved specifically by MMP-7. However, design details such as the choice of energy acceptor and conjugation method was found to drastically alter the function of the nanobeacon. Studies of nanobeacons synthesized with Black Hole Quencher-1 or Rhodamine Red by either covalent conjugation or electrostatic self-assembly revealed that peptide conformation and bonding flexibility are both important considerations in nanobeacon design due to QD sterics.

In this thesis, we demonstrate a new type of resonant, nonlinear, light-matter interaction facilitated by the unique electromagnetic vacuum density-of-state (DOS) structure of Photonic Band Gap (PBG) materials. Strong light localization inside PBG waveguides allows extremely strong coupling between laser fields and embedded two-level quantum dots (QD). The resulting Mollow splitting is large enough to traverse the precipitous DOS jump created by a waveguide mode cutoff. This allows the QD Bloch vector to sense the non-smoothness of the vacuum structure and evolve in novel ways that are forbidden in free space. These unusual strong-coupling effects are described using a "vacuum structure term" of the Bloch equation, combined with field-dependent relaxation rates experienced by the QD Bloch vector. This leads to alternation between coherent evolution and enhanced relaxation. As a result, dynamic high-contrast switching of QD populations can be realized with a single beam of picosecond pulses. During enhanced relaxation to a slightly inverted steady state at the pulse peak, the Bloch vector rapidly switches from anti-parallel to parallel alignment with the pulse torque vector. This then leads to a highly inverted state through subsequent coherent "adiabatic following" near the pulse tail, providing a robust mechanism for picosecond, femto-Joule all-optical switching. The simultaneous input of a second, weaker (signal) driving beam at a different frequency on top of the stronger (holding) beam enables rich modulation effects and unprecedented coherent control over the QD population. This occurs through resonant coupling of the signal pulse with the Mollow sideband transitions created by the holding pulse, leading to either augmentation or negation of the final QD population achieved by the holding pulse alone. This effect is applied to ultrafast all-optical logic AND, OR and NOT gates in the presence of significant (0.1 THz) nonradiative dephasing and (about 1%) inhomogeneous broadening. Further numerical studies of pulse evolutions inside the proposed devices demonstrate satisfactory population contrast within a PBG waveguide length of about 10 micro meter. These results provide the building blocks for low-power, ultrafast, multi-wavelength channel, on-chip, all-optical computing.

Quantum Dot (QD) nanobeacons distinguish themselves from molecular beacons with the promise of non-linear activation, tunability, and multi-functionality. These unique features make them highly attractive for cancer detection imaging with opportunities for increased signal-to-background ratio and tunable sensitivity. In this thesis, a nanobeacon was designed to target matrix metalloproteinase-7 (MMP-7), known to be over-expressed by a wide array of tumours. The nanobeacon is normally dark until specifically activated by MMP-7. The overall design strategy links single QDs to multiple energy acceptors by GPLGLARK peptides that can be cleaved specifically by MMP-7. However, design details such as the choice of energy acceptor and conjugation method was found to drastically alter the function of the nanobeacon. Studies of nanobeacons synthesized with Black Hole Quencher-1 or Rhodamine Red by either covalent conjugation or electrostatic self-assembly revealed that peptide conformation and bonding flexibility are both important considerations in nanobeacon design due to QD sterics.

Syfte: Syftet med denna studie var att se hur och varför volatiliteten påverkades i DJIA, S&P 500 och NASDAQ Composite under IT-bubblan. Metod: Års- och månadsvolatiliteten för DJIA, S&P 500 och NASDAQ Composite har beräknats under 1995-2004 med hjälp av data från Yahoo Finance. Empiri: Resultatet visar att volatiliteten var väsentligt högre i NASDAQ Composite än vad den var i S&P 500 och DJIA som i sin tur höll en liknande volatilitet i förhållande till varandra. Analys: I analysen framträdde det att volatiliteten blev väsentligt högre i samband med att bubblan sprack under maj 2000 fram till dess att paniken lade sig kort efter maj 2002. Det fanns en hög överensstämmelse mellan denna rapport och övriga tidigare studier. Teorierna var mestadels väl applicerbara. Slutsats: Volatiliteten för DJIA, S&P 500 och NASDAQ Composite var som högst mellan 2000 och 2002 under undersökningsperioden 1995-2004. IT-bubblan uppstod samt sprack till följd av irrationellt investeringsbeteende bland investerarna på aktiemarknaden och paniken som uppstod efteråt gjorde att volatiliteten på aktiemarknaden höll sig förhållandevis hög fram tills den lade sig kort efter maj 2002. NASDAQ Composite hade högst volatilitet till följd av IT-bubblan medan DJIA och S&P 500 hade likvärdig volatilitet. Samtliga index följde ett liknande mönster, detta var troligtvis på grund av att företag från NASDAQ Composite kunde återfinnas i S&P 500 samt DJIA. / Purpose: The purpose of this thesis is to see how and why the volatility was affected in DJIA, S&P 500 and NASDAQ Composite during the Dot-com bubble. Method: The yearly and monthly volatility of DJIA, S&P 500 and NASDAQ Composite were computed with data from a period spanning 1995-2004, which were collected from Yahoo Finance. Empiricism: The results illustrate that the volatility was vastly higher in NASDAQ Composite than in DJIA and S&P 500 which in turn yielded a comparable volatility in relation to each other. Analysis: The analysis extracted the fact that the volatility rose considerably after the bubble burst during May 2000 and started waning after the panic died out circa May 2002. There were a relatively high harmony between the results of this report and the earlier studies which it was compared to. Conclusion: The volatility for DJIA, S&P 500 and NASDAQ 500 was higher between 200 and 2002 than during the rest of the observed period. The Dot-com bubble arose due to irrational investment behavior among investors and the panic which arose afterwards contributed to the increasing volatility which maintained a high level until it subsided after May 2002. NASDAQ Composite had the highest volatility during the Dot-com bubble while DJIA and S&P 500 had a similar volatility. All indexes followed a similar pattern, this was probably due to that companies from NASDAQ Composite reasonably should be found in S&P 500 and DJIA.

The commercially available solar cells suffer from low conversion efficiency due to the thermalization and transmission losses arising from the mismatch between the band gap of the semiconductor materials and the solar spectrum. Advanced device architectures based on nanomaterial have been proposed and being successfully used to enhance the efficiency of the solar cells. Quantum dots (QDs) and nanowires (NWs) are the nanosclae structures that have been exploited for the development of the third generation solar cell devices and nanowire based solar cells, respectively. The optical and electrical properties of these materials can be tuned by their size and geometry; hence they have great potential for the production of highly efficient solar cell. Application of QDs and NWs with enhanced optoelectronic properties and development of low-cost fabrication processes render a new generation of economic highly efficient PV devices. The most significant contribution of this PhD study is the development of simple and cost effective methods for fabrication of nanowires and quantum dots for advanced solar cell architectures. In advanced silicon nanowires (SiNWs) array cell, SiNWs have been widely synthesised by the well-known vapor-liquid-solid method. Electron beam lithography and deep reactive ion etching have also been employed for fabrication of SiNWs. Due to the high price and complexity of these methods, simple and cost effective approaches are needed for the fabrication of SiNWs. In another approach, to enhance the cell efficiency, organic dyes and polymers have been widely used as luminescent centers and host mediums in the luminescent down shifting (LDS) layers. However, due to the narrow absorption band of the dyes and degradation of the polymers by moisture and heat, these materials are not promising candidates to use as LDS. Highly efficient luminescent materials and transparent host materials with stable mechanical properties are demanded for luminescent down shifting applications. In this project, simple fabrication processes were developed to produce SiNWs and QDs for application in advanced cell architectures. The SiNWs array were successfully fabricated, characterized and deployed in new cell architectures with radial p-n junction geometry. The luminescence down shifting of layers containing QDs in oxide and glass mediums was verified. The silica coated quantum dots which are suitable for luminescence down shifting, were also fabricated and characterized for deployment in new design architectures. Silicon nanowires were fabricated using two simplified methods. In the first approach, a maskless reactive ion etching process was developed to form upright ordered arrays of the SiNWs without relying on the complicated nano-scale lithography or masking methods. The fabricated structures were comprehensively characterized. Light trapping and photoluminescence properties of the medium were verified. In the second approach, combination of the nanosphere lithography and etching techniques were utilized for wire formation. This method provides a better control on the wire diameters and geometries in a very simple and cost effective way. The fabricated silicon nanowires were used for formation of the radial p-n junction array cells. The functionality of the new cell structures were confirmed through experimental and simulation results. Quantum dots are promising candidates as luminescent centers due to their tunable optical properties. Oxide/glass matrices are also preferred as the host medium for QDs because of their robust mechanical properties and their compatibility with standard silicon processing technology. Besides, the oxide layers are transparent mediums with good passivation and anti-reflection coating properties. They can also be used to encapsulate the cell. In this work, ordered arrays of QDs were incorporated in an oxide layer to form a luminescent down shifting layer. This design benefits from the enhanced absorption of a periodic QD structure in a transparent oxide. The down shifting properties of the layer after deployment on a crystalline silicon solar cell were examined. For this purpose, crystalline silicon solar cells were fabricated to use as test platform for down shifting. In order to examine the down-shifting effect, different approaches for formation of a luminescence down shifting layer were developed. The LDS layer consist of cadmium selenide- zinc sulfide (CdSe/ZnS) quantum dots in oxide and glass layers to act as luminescent centers and transparent host medium, respectively. The structural and optical properties of the fabricated layers were studied. The concept of spectral engineering was proved by the deployment of the layer on the solar cell. To further benefit from the LDS technique, quantum efficiency of the QDs and optical properties of the layer must be improved. Demand for the high quantum efficiency material with desired geometry leaded us to synthesis quantum dots coated with a layer of grown oxide. As the luminescence quantum efficiency of the QDs is correlated to the surface defects, one advantage of having oxide on the outer shell of the QDs, is to passivate the surface non-radiative recombination centers and produce QDs with high luminescent quantum yield. In addition, nanoparticles with desired size can be obtained only by changing the thickness of the oxide shell. This method also simplifies the fabrication of QD arrays for luminescence down shifting application, since it is easier to form ordered arrays from larger particles. QD superlattices in an oxide medium can be fabricated on a large area by a simple spin-coating or dip coating methods. The photonic crystal properties of the proposed structure can greatly increase the absorption in the QDs layer and enhance the effect of down shifting.

The physics and technology of the heterojunction infrared photodetectors having different material systems have been studied extensively. Devices used in this study have been characterized by using mainly optical methods, and electrical measurements have been used as an auxiliary method. The theory of internal photoemission in semiconductor heterojunctions has been investigated and the existing model has been extended by incorporating the effects of the difference in the effective masses in the active region and the substrate, nonspherical-nonparabolic bands, and the energy loss per collisions. The barrier heights (correspondingly the cut-off wavelengths) of SiGe/Si samples have been found from their internal photoemission spectrums by using the complete model which has the wavelength and doping concentration dependent free carrier absorption parameters. A qualitative model describing the mechanisms of photocurrent generation in SiGe/Si HIP devices has been presented. It has been shown that the performance of our devices depends significantly on the applied bias and the operating temperature. Properties of internal photoemission in a PtSi/Si Schottky type infrared detector have also been studied. InGaAs/InP quantum well photodetectors that covers both near and mid-infrared spectral regions by means of interband and intersubband transitions have been studied. To understand the high responsivity values observed at high biases, the gain and avalanche multiplication processes have been investigated. Finally, the results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors have been presented. A simple physical picture has also been discussed to account for the main observed features.