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The purpose of this thesis is to fabricate 12-layer InxGa1-xAs quantum dots grown on 2-nm In0.1Ga0.9As quantum wells (DWell) laser structures grown by molecular-beam epitaxy (MBE) on GaAs substrats. We expect to optimum the lasers performance by tune the epitaxial recipe and fabrication condition. For the carrier injection efficiency, DWell structure of quantum dots grown on quantum wells is proposed to enhance the carrier capture rate. So we analyze a series of DWell structure in this work. In the epitaxial recipe, we investigate the influences of p-type doping and change the quantum wells growth temperature for the laser structures. In the laser fabrication, to transport the light wave in smaller dispersion loss single mode waveguide, dry etching photolithography processes are adapted in this study to fabricate 2.2mm width ridge waveguide. The as-cleaved facets are used as Fabry-Perot laser mirrors in ridge waveguide lasers. The pattern can be transferred effectively with less under-cut by dry etching compare with wet etching. Finally, the P-type doping DWell laser exhibits high power/facet of 24mW, slope efficiency of 0.209W/A. The maximum power/facet of PWell580 laser reach to 24mW, slope efficiency of 0.238W/A after raising the growth temperature to 580oC.

Semiconductor quantum dots (QDs) are prime candidates for single and entangled photon sources in quantum information technologies due to their unique optical properties. This thesis investigates the development of QD sources operating at the telecom C-band ---around 1550 nm---, a critical aspect for long-distance applications in optical fibers. The research focuses on the design and optimization of InAs/GaAs QDs for efficient single photon emission within the telecom C-band. This thesis delves into the optimization of the quantum dot environment, by etching its matrix as a microlens (ML). The design process utilizes both simulations and lab fabrication techniques to achieve a source with high single photon throughput, a key requirement for quantum key distribution (QKD). To achieve this, the design optimizes factors such as material growth techniques, device structures, and microlens array configuration to enhance light collection efficiency by a microscope objective and Purcell effect for higher single-photon emission rate. The optimized microlens geometries, particularly the Gaussian and hemispherical shapes, significantly enhanced light extraction efficiency by the objective, achieving up to 40\% and 35\% respectively. The combined fabrication techniques of FIB milling, photolithography, and dry etching resulted in upgraded optical properties and minimal scattering in the microlenses. Furthermore, this work builds upon previous research conducted at the Royal Institute of Technology (KTH). The Quantum Nano Photonics (QNP) group successfully employed QDs to generate entangled photon states. This thesis extends this research by focusing on the design and optimization of a telecom C-band QD source suitable for long-distance transmission through existing fiber optic infrastructure over the Greater Stockholm Metropolitan Area, i.e. between the QNP-group lab at KTH AlbaNova campus and Ericsson HQ, in Kista, Stockholm. The feasibility of such transmission is explored by demonstrating the transmission of single photons from a QD source in the QNP lab at KTH to Ericsson's lab. This thesis contributes to the advancement of QD-based telecom C-band photon sources for future quantum communication networks, with a specific focus on microlens design and fabrication for enhanced single-photon emission efficiency. / Halvledarkvantprickar (QD) är utmärkta kandidater för enstaka och sammanflätade fotonkällor i kvantinformationsteknik på grund av deras unika optiska egenskaper. Denna avhandling undersöker utvecklingen av QD-källor som strålar på telekom C-band ---cirka 1550 nm---, en kritisk aspekt för långdistansapplikationer i optiska fiber. Forskningen fokuserar på design och optimering av InAs/GaAs QDs för effektiv emission av enstaka fotoner inom telekom C-bandet. Denna avhandling fördjupar sig i utformningen av kvantprickarkällan, med hjälp av en mikrolins (ML) array. Designprocessen använder både simuleringar och tillverkningstekniker för att uppnå en källa med hög enfotonrenhet, ett viktigt krav för kvantnyckeldistribution (QKD). För att uppnå detta optimerar designen faktorer som materialtillväxttekniker, enhetsstrukturer och mikrolinskonfiguration för att förbättra ljusinsamlingseffektiviteten och Purcell-effekten för ljusare och snabbare emission av enstaka fotoner. De optimerade mikrolinsgeometrierna, särskilt de gaussiska och halvsfäriska formerna, förbättrade avsevärt ljusextraktionseffektiviteten och nådde upp till 40\% respektive 35\%. De kombinerade tillverkningsteknikerna FIB-fräsning, fotolitografi och torretsning resulterade i uppgraderade optiska egenskaper och minimal spridning i de mikrolinserna. Vidare bygger detta arbete på tidigare forskning som bedrivits vid Kungliga Tekniska Högskolan (KTH). Quantum Nano Photonics-gruppen (QNP) använde framgångsrikt QD för att generera sammanflätade fotontillstånd. Denna avhandling utvidgar denna forskning genom att fokusera på design och optimering av en telekom C-band QD-källa lämplig för långdistansöverföring genom befintlig fiberoptisk infrastruktur över Storstockholmsområdet, dvs. mellan QNP-gruppens labb på KTH AlbaNova campus och Ericssons huvudkontor i Kista, Stockholm. Genomförbarheten av sådan överföring undersöks genom att demonstrera överföringen av enstaka fotoner från en QD-källa i QNP-labbet på KTH till Ericssons labb. Denna avhandling bidrar till utvecklingen av QD-baserade C-bandsfotonkällor för framtida kvantkommunikationsnätverk, med ett specifikt fokus på mikrolinsarraydesign för förbättrad renhet och emissionseffektivitet för enskilda fotoner. Arbetet bygger på tidigare forskning om generering av kvantsammanflätning och banar väg för säkra kvantkommunikationsnätverk över långa avstånd.

The goals of this project are study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70-100 degrees C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te3 contact performance will also be studied as a function of the Sb2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

This aim of this dissertation is to fabrication microlens arrays (MLA) by silicon mold using dry etching technique and imprint on the PET substrate by direct imprinting microlens structures on Polyethylene terephthalate (PET) substrates using Si molds.The MLA on PET substrates can be used to increase light emitting efficiency from OLED. The MLA was formed by first etching the silicon wafers using SF6 process gas in an RIE/ECR system using isotropic etching technique.The concave undercuts obtained after the dry etching was removed by wet-etching the wafer in HF and HNO3 solutions.Finally,the fabricated silicon mold was used to imprint the microlens structure on the PET substrates.The microlens array with 10 £gm and 25 £gm radius on PET substrate were successfully fabricated using the technique.The surface coverage of the MLA of beter than 90% was obtained. In addition,the outcoupling efficiency of an OLED can be increased using the MLA.The brightness enhancement factor of 1.67 was achieved using in the MLA comparision to the simulation result of 1.73.

This study utilizes a modified LIGA process to fabricate a high aspect ratio aspherical micro lens array, which improves low light output of OLED due to its intrinsic total internal reflection. Presently typical OLED extraction efficiency is not high. How to increase OLED extraction efficiency is a valuable topic to discuss. This study analyzes related parameters that influence the formation of micro lenses, for example, the influence of variation of diametric dimension, dry etching parameters and electroforming rate. The experimental results indicate that the tolerance of dimensional variation of the diameter is about 5% during the thermal reflow and dry etching stage. The oxygen content and the photoresist surface during dry etching influence the result. A high electroforming rate is helpful for covering the surface defects on photoresist. An undercut caused by dry etching will discontinue the initial electroformed layers. A apherical microens array can raise the luminance to a maximum of 15 times higher.

Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2011. / ENGLISH ABSTRACT: The nano-age is more about the mesoscopic phenomena, than those occurring at molecular and atomic level, which have been studied by chemists and physicists for more than a hundred years. Nanotechnology is currently one of the most active fields being explored in many different disciplines by many scientists across the world. In this research field, it is imperative to continually create more effective and superior methods to build smaller and smaller electronic devices, circuits and sensors. Technology is being improved continually and, specifcally at our university, there was a need to improve our device manufacturing facility. The aim of this work was to create a new sputtering system, build a dry etching system and to make modifications to upgrade existing equipment. This work has been done to produce nano structures or devices and, most importantly, to save costs. New systems and equipment have been built to keep up with the progress in this field. In order to understand the significance of the different types of equipment used in the fabrication of thin film superconductor layers, an overview will be given of the complete process of manufacturing a patterned Josephson junction. The apparatus used will be described and critically analyzed, whereby the shortfalls in design will be highlighted and improvements shown. Some of the equipment, such as the plasma laser deposition system, the lithography system and the test facility existed before and has been modified. Newly designed systems were built to further improve the quality of our thin film superconductors; these include the inverted cylindrical magnetron (ICM) sputtering system, the argon ion mill and the incandescent substrate heater. Finally, the results of the improved thin films and structures will be shown. To summarize: The entire process was analyzed and upgraded, resulting in an improved device manufacturing facility. / AFRIKAANSE OPSOMMING: Die nano-era het aangebreek en nanotegnologie is tans een van die mees aktiewe en diverse navorsingsvelde wat wetenskaplikes wêreldwyd ontgin - hoofsaaklik as gevolg van nuwe verskynsels op molekulêre en atomiese vlak. In die nanotegnologie-navorsingsveld is die vereiste dat daar voortdurend meer effektiewe metodes gevind moet word om die al hoe meer miniatuurwordende elektroniese meganismes met verbeterde energieverbruik, spoed en ruimtebesparende vermoëns tot stand te bring. Dit is duidelik dat in hierdie toonaangewende navorsingsveld, waar tegnologiese ontwikkeling voorturend en snelgroeiend is, dit dikwels vinniger is om reeds bestaande toerusting aan te pas en te moderniseer ten einde in pas te bly met nuutontwikkelde en ontwikkelende tegnologieë. Die doel van die werk verrig, wat hier beskryf word, was om 'n nuwe deponeerstelsel, sowel as 'n droogets stelsel te bou. Bestaande apparaat is opgradeer deur verandering aan te bring. Die uiteintelikke doel is die vervaarding van beter nano-strukture, en terselfde tyd om kostes te bespaar. Nuwe stelsels en toerusting is gebou om tred te hou met tegnologiese vooruitgang. Om die belangrikheid van die verskillende tipes toerusting wat in die vervaardiging van dunlaag- supergeleierlae gebruik word te verstaan, sal 'n oorsig van die volledige vervaardigingsproses van 'n Josephson-patroon gegee word. Die apparaat wat gebruik is, sal beskryf en krities ontleed word en die tekorte in ontwerp sal uitgelig word, terwyl verbeterings aangetoon sal word. Sommige van die toerusting het voorheen bestaan en is aangepas, byvoorbeeld die plasmalaser-neerleggingstelsel, die litografiestelsel en die toetsfasiliteit. Nuwe ontwerpstelsels is gebou om die gehalte van ons dunlaagsupergeleiers verder te verbeter. Dit sluit die silindriese plasma deponeer stelsel, die Argon-ioon bron en die substraatverwarmer in. In hierdie tesis word daar eerstens 'n oorsig gegee van die totstandkomingsproses van 'n supergeleier kwantum-interfensiemeganisme, beginnende met dunlaagneerslag van YBCO (Yttrium, Barium en Koperoksied). Die oorsig word gevolg deur 'n stap-virstap beskrywing van elke daaropvolgende proses wat lei tot die voltooiing van die meganisme. Daarna word die toetsprosedure van die dunlaag en instrumente verduidelik. Bykomende veranderinge wat aan bestaande instrumente aangebring is (ten einde die dunfilmlae te verbeter en die toetsfasiliteit op te gradeer) word ook bespreek. Daar sal ook verwys word na artikels wat in verskeie joernale verskyn het oor die vernuwende aanpassings en sisteme wat in hierdie tesis verduidelik word. Ten slotte sal die resultate van die verbeterde dunlae en strukture getoon word. Kortom: die hele proses is ontleed en opgegradeer om 'n verbeterde apparaatvervaardigingsfasiliteit tot gevolg te hê.

[EN] The main topic of the present thesis is the improvement of fabrication processes simulation by means of the Level Set (LS) method. The LS is a mathematical approach used for evolving fronts according to a motion defined by certain laws. The main advantage of this method is that the front is embedded inside a higher dimensional function such that updating this function instead of directly the front itself enables a trivial handling of complex situations like the splitting or coalescing of multiple fronts. In particular, this document is focused on wet and dry etching processes, which are widely used in the micromachining process of Micro-Electro-Mechanical Systems (MEMS). A MEMS is a system formed by mechanical elements, sensors, actuators, and electronics. These devices have gained a lot of popularity in last decades and are employed in several industry fields such as automotive security, motion sensors, and smartphones. Wet etching process consists in removing selectively substrate material (e.g. silicon or quartz) with a liquid solution in order to form a certain structure. This is a complex process since the result of a particular experiment depends on many factors, such as crystallographic structure of the material, etchant solution or its temperature. Similarly, dry etching processes are used for removing substrate material, however, gaseous substances are employed in the etching stage. In both cases, the usage of a simulator capable of predicting accurately the result of a certain experiment would imply a significant reduction of design time and costs. There exist a few LS-based wet etching simulators but they have many limitations and they have never been validated with real experiments. On the other hand, atomistic models are currently considered the most advanced simulators. Nevertheless, atomistic simulators present some drawbacks like the requirement of a prior calibration process in order to use the experimental data. Additionally, a lot of effort must be invested to create an atomistic model for simulating the etching process of substrate materials with different atomistic structures. Furthermore, the final result is always formed by unconnected atoms, which makes difficult a proper visualization and understanding of complex structures, thus, usually an additional visualization technique must be employed. For its part, dry etching simulators usually employ an explicit representation technique to evolve the surface being etched according to etching models. This strategy can produce unrealistic results, specially in complex situations like the interaction of multiple surfaces. Despite some models that use implicit representation have been published, they have never been directly compared with real experiments and computational performance of the implementations have not been properly analysed. The commented limitations are addressed in the various chapters of the present thesis, producing the following contributions: - An efficient LS implementation in order to improve the visual representation of atomistic wet etching simulators. This implementation produces continuous surfaces from atomistic results. - Definition of a new LS-based model which can directly use experimental data of many etchant solutions (such as KOH, TMAH, NH4HF2, and IPA and Triton additives) to simulate wet etching processes of various substrate materials (e.g. silicon and quartz). - Validation of the developed wet etching simulator by comparing it to experimental and atomistic simulator results. - Implementation of a LS-based tool which evolves the surface being etched according to dry etching models in order to enable the simulation of complex processes. This implementation is also validated experimentally. - Acceleration of the developed wet and dry etching simulators by using Graphics Processing Units (GPUs). / [ES] El tema principal de la presente tesis consiste en mejorar la simulación de los procesos de fabricación utilizando el método Level Set (LS). El LS es una técnica matemática utilizada para la evolución de frentes según un movimiento definido por unas leyes. La principal ventaja de este método es que el frente está embebido dentro de una función definida en una dimensión superior. Actualizar dicha función en lugar del propio frente permite tratar de forma trivial situaciones complejas como la separación o la colisión de diversos frentes. En concreto, este documento se centra en los procesos de atacado húmedo y seco, los cuales son ampliamente utilizados en el proceso de fabricación de Sistemas Micro-Electro-Mecánicos (MEMS, de sus siglas en inglés). Un MEMS es un sistema formado por elementos mecánicos, sensores, actuadores y electrónica. Estos dispositivos hoy en día son utilizados en muchos campos de la industria como la seguridad automovilística, sensores de movimiento y teléfonos inteligentes. El proceso de atacado húmedo consiste en eliminar de forma selectiva el material del sustrato (por ejemplo, silicio o cuarzo) con una solución líquida con el fin de formar una estructura específica. Éste es un proceso complejo pues el resultado depende de muchos factores, tales como la estructura cristalográfica del material, la solución atacante o su temperatura. De forma similar, los procesos de atacado seco son utilizados para eliminar el material del sustrato, sin embargo, se utilizan sustancias gaseosas en la fase de atacado. En ambos casos, la utilización de un simulador capaz de predecir de forma precisa el resultado de un experimento concreto implicaría una reducción significativa del tiempo de diseño y de los costes. Existen unos pocos simuladores del proceso de atacado húmedo basados en el método LS, no obstante tienen muchas limitaciones y nunca han sido validados con experimentos reales. Por otro lado, los simuladores atomísticos son hoy en día considerados los simuladores más avanzados pero tienen algunos inconvenientes como la necesidad de un proceso de calibración previo para poder utilizar los datos experimentales. Además, debe invertirse mucho esfuerzo para crear un modelo atomístico para la simulación de materiales de sustrato con distintas estructuras atomísticas. Asimismo, el resultado final siempre está formado por átomos inconexos que dificultan una correcta visualización y un correcto entendimiento de aquellas estructuras complejas, por tanto, normalmente debe emplearse una técnica adicional para la visualización de dichos resultados. Por su parte, los simuladores del proceso de atacado seco normalmente utilizan técnicas de representación explícita para evolucionar, según los modelos de atacado, la superficie que está siendo atacada. Esta técnica puede producir resultados poco realistas, sobre todo en situaciones complejas como la interacción de múltiples superficies. A pesar de que unos pocos modelos son capaces de solventar estos problemas, nunca han sido comparados con experimentos reales ni el rendimiento computacional de las correspondientes implementaciones ha sido adecuadamente analizado. Las expuestas limitaciones son abordadas en la presente tesis y se han producido las siguientes contribuciones: - Implementación eficiente del método LS para mejorar la representación visual de los simuladores atomísticos del proceso de atacado húmedo. - Definición de un nuevo modelo basado en el LS que pueda usar directamente los datos experimentales de muchos atacantes para simular el proceso de atacado húmedo de diversos materiales de sustrato. - Validación del simulador comparándolo con resultados experimentales y con los de simuladores atomísticos. - Implementación de una herramienta basada en el método LS que evolucione la superficie que está siendo atacada según los modelos de atacado seco para habilitar la simulación de procesos comple / [CA] El tema principal de la present tesi consisteix en millorar la simulació de processos de fabricació mitjançant el mètode Level Set (LS). El LS és una tècnica matemàtica utilitzada per a l'evolució de fronts segons un moviment definit per unes lleis en concret. El principal avantatge d'aquest mètode és que el front està embegut dins d'una funció definida en una dimensió superior. D'aquesta forma, actualitzar la dita funció en lloc del propi front, permet tractar de forma trivial situacions complexes com la separació o la col·lisió de diversos fronts. En concret, aquest document es centra en els processos d'atacat humit i sec, els quals són àmpliament utilitzats en el procés de fabricació de Sistemes Micro-Electro-Mecànics (MEMS, de les sigles en anglès). Un MEMS és un sistema format per elements mecànics, sensors, actuadors i electrònica. Aquests dispositius han guanyat molta popularitat en les últimes dècades i són utilitzats en molts camps de la indústria, com la seguretat automobilística, sensors de moviment i telèfons intel·ligents. El procés d'atacat humit consisteix en eliminar de forma selectiva el material del substrat (per exemple, silici o quars) amb una solució líquida, amb la finalitat de formar una estructura específica. Aquest és un procés complex ja que el resultat de un determinat experiment depèn de molts factors, com l'estructura cristal·logràfica del material, la solució atacant o la seva temperatura. De manera similar, els processos d'atacat sec son utilitzats per a eliminar el material del substrat, no obstant, s'utilitzen substàncies gasoses en la fase d'atacat. En ambdós casos, la utilització d'un simulador capaç de predir de forma precisa el resultat d'un experiment en concret implicaria una reducció significativa del temps de disseny i dels costos. Existeixen uns pocs simuladors del procés d'atacat humit basats en el mètode LS, no obstant tenen moltes limitacions i mai han sigut validats amb experiments reals. Per la seva part, els simuladors atomístics tenen alguns inconvenients com la necessitat d'un procés de calibratge previ per a poder utilitzar les dades experimentals. A més, deu invertir-se molt d'esforç per crear un model atomístic per a la simulació de materials de substrat amb diferents estructures atomístiques. Així mateix, el resultat final sempre està format per àtoms inconnexos que dificulten una correcta visualització i un correcte enteniment d'aquelles estructures complexes, per tant, normalment deu emprar-se una tècnica addicional per a la visualització d'aquests resultats. D'altra banda, els simuladors del procés d'atacat sec normalment utilitzen tècniques de representació explícita per evolucionar, segons els models d'atacat, la superfície que està sent atacada. Aquesta tècnica pot introduir resultats poc realistes, sobretot en situacions complexes com per exemple la interacció de múltiples superfícies. A pesar que uns pocs models son capaços de resoldre aquests problemes, mai han sigut comparats amb experiments reals ni tampoc el rendiment computacional de les corresponents implementacions ha sigut adequadament analitzat. Les exposades limitacions son abordades en els diferents capítols de la present tesi i s'han produït les següents contribucions: - Implementació eficient del mètode LS per millorar la representació visual dels simuladors atomístics del procés d'atacat humit. - Definició d'un nou model basat en el mètode LS que puga utilitzar directament les dades experimentals de molts atacants per a simular el procés d'atacat humit de diversos materials de substrat. - Validació del simulador d'atacat humit desenvolupat comparant-lo amb resultats experimentals i amb els de simuladors atomístics. - Implementació d'una ferramenta basada en el mètode LS que evolucione la superfície que està sent atacada segons els models d'atacat sec per, d'aquesta forma, habilitar la simulació de processo / Montoliu Álvaro, C. (2015). Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/58609

Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic band gap; a range of wavelengths for which light propagation is forbidden. 2D PhCs exhibit most of the properties as their three dimension counterparts with a compatibility with standard semiconductor processing techniques such as epitaxial growth, electron beam lithography, Plasma deposition/etching and electromechanical lapping/polishing. Indium Phosphide (InP) is the material of choice for photonic devices especially when it comes to realization of coherent light source at 1.55 μm wavelength. Precise engineering of the nanostructures in the PhC lattice offers novel ways to confine, guide and control light in phonic integrated circuits (PICs). Strong confinement of light in PhCs offer novel opportunities in many areas of physics and engineering. Dry etching, a necessary process step in PhC device manufacturing, is known to introduce damage in the etched material. Process induced damage and its impact on the electrical and optical properties of PhCs depends on the etched material, the etching technique and process parameters. We have demonstrated a novel post-etch process based on so-called mass-transport (MT) technology for the first time on InP-based PhCs that has significantly improved side-wall verticality of etched PhC holes. A statistical analysis performed on several devices fabricated by MT process technology shows a great deal of improvement in the reliability of optical transmission characteristics which is very promising for achieving high optical quality in PhC components. Several PhC devices were manufactured using MT technology. Broad enough PhC waveguides that operate in the mono/multi-mode regime are interesting for coarse wavelength de-multiplexing. The fundamental mode and higher order mode interaction creates mini-stop band (MSB) in the dispersion diagram where the higher order mode has a lower group velocity which can be considered as slow light regime. In this thesis work, the phenomena of MSBs and its impact on transmission properties have been evaluated. We have proposed and demonstrated a method that enables spectral tuning with sub-nanometer accuracy which is based on the transmission MSB. Along the same lines most of the thesis work relates to broad enough PhC guides that operated in the multimode regime. Temperature tuning experiments on these waveguides reveals a clear red-shift with a gradient of dλ/dT=0.1 nm/˚C. MSBs in these waveguides have been studied by varying the width in incremental amounts. Analogous to semiconductors heterostructures, photonic heterostructures are composed of two photonic crystals with different band-gaps obtained either by changing the air-fill factor or by the lattice constant. Juxtaposing two PhC and the use of heterostructures in waveguide geometry has been experimentally investigated in this thesis work. In particular, in multimode line defect waveguides the “internal” MSB effect brings a new dimension in single junction-type photonic crystal waveguide (JPCW) and heterostructure W3 (HW3) for fundamental physics and applications. We have also fabricated an ultra-compact polarization beam splitter (PBS) realized by combining a multimode waveguide with internal PhC. MSBs in heterostructure waveguides have shown interesting applications such as designable band-pass flat-top filters, and resonance-like filters with high transmission. In the course of this work, InGaAsP suspended membrane technology was developed. An H2 cavity with a linewidth of ~0.4 nm, corresponding to a Q value of ~3675 has been shown. InGaAsP PhC membrane is an ideal platform to study coupled quantum well/dot-nanocavity system. / <p>QC 20120831</p>

Dry etching is an important technique for pattern transferin fabrication of most opto-electronic devices, since it canprovide good control of both structure size and shape even on asub-micron scale. Unfortunately, this process step may causedamage to the material which is detrimental to deviceperformance. It is therefore an objective of this thesis todevelop and investigate low damage etching processes for InPbased devices. An ion beam system in combination with hydrocarbon (CH4) based chemistries is used for etching. At variousion energies and gas flows the etching is performed in twomodes, reactive ion beam etching (RIBE) and chemical assistedion beam etching (CAIBE). How these conditions affect both etchcharacteristics (e.g. etch rates and profiles, surfacemorphology and polymer formation) and etch induced damage (onoptical and electrical properties) is evaluated and discussed.Attention is also paid to the effects of typical post etchingtreatments such as annealing on the optical and electricalproperties. An important finding is the correlation betweenas-etched surface morphology and recovery/degradation inphotoluminescence upon annealing in PH3. Since this type of atmosphere is typical forcrystal regrowth (an important process step in III/Vprocessing) a positive result is imperative. A low ion energy N2/CH4/H2CAIBE process is developed which not onlysatisfies this criteria but also exhibits good etchcharacteristics. This process is used successfully in thefabrication of laser gratings. In addition to this, the abilityof the ion beam system to modify the surface morphology in acontrollable manner is exploited. By exposing such modifiedsurfaces to AsH3/PH3, a new way to vary size and density of InAs(P)islands formed on the InP surfaces by the As/P exchangereaction is presented. This thesis also proposes a new etch chemistry, namelytrimethylamine ((CH3)3N or TMA), which is a more efficient methyl sourcecompared to CH4because of the low energy required to break the H3C-N bond. Since methyl radicals are needed for theetching it is presumably a better etching chemistry. A similarinvestigation as for the CH4chemistry is performed, and it is found that bothin terms of etch characteristics and etch induced damage thisnew chemistry is superior. Extremely smooth morphologies, lowetch induced damage and an almost complete recovery uponannealing can be obtained with this process. Significantly,this is also so at relatively high ion energies which allowshigher etch rates. <b>Keywords:</b>InP, dry etching, ion beam etching, RIBE,CAIBE, hydrocarbon chemistry, trimethylamine, As/P exchangereaction, morpholoy, low damage, AFM, SCM, annealing