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There is significant need to improve the sensitivity and selectivity for detecting chemical and biological agents. This need exists in a myriad of human endeavors, from the monitoring of production of consumer products to the detection of infectious agents and cancers. Although many well established methodologies for chemical and biological sensing exist, such as mass spectrometry, gas or liquid phase chromatography, enzymelinked immunosorbent (ELISA) assays, etc., it is the goal of the work described herein to outline aspects of two specific platforms which can add two very important features, low cost and portability. The platforms discussed in this dissertation are organic semiconductor field-effect transistors (OFETS), in various architectural forms and chemical modifications, and ion channels immobilized in tethered lipid bilayers integrated with solid state devices. They take advantage of several factors to make these added features possible, low cost manufacturing techniques for producing silicon and organic circuits, low physical size requirements for the sensing elements, the capability to run such circuits on low power, and the ability of these systems to directly transduce a sensing event into an electrical signal, thus making it easier to process, interpret and record a signal. In the most basic OFET functionality, many types of organic semiconductors can be used to produce transistors, each with a slightly different range of sensitivities. When used in concert, they can produce a reversible chemical "fingerprint". These OFETS can also be integrated with silicon transistors - in a hybrid device architecture - to enhance their sensitivity while maintaining their reversibility. The organic semiconductors themselves can be chemically altered with the use of small molecule receptors designed for specific chemicals or chemical functional groups to greatly enhance the interaction of these molecules with the transistor. This increases both sensitivity and selectivity for discrete devices. Specially designed nanoscale OFET configurations with individually addressable gates can enhance the sensitivity of OFETS as well. Finally, ion channels can be selected for immobilization in tethered lipid bilayer sensors which are already inherently sensitive to the analyte of choice or can be genetically modified to include receptors for many kinds of chemical or biological agents. / text

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The continuous improvement in the semiconductor industry has been successfully achieved by the reducing dimensions of CMOS (complementary metal oxide semiconductor) technology. For the last four decades, the scaling down of physical thickness of SiO₂ gate dielectrics has improved the speed of output drive current by shrinking of transistor area in front-end-process of integrated circuits. A higher number of transistors on chip resulting in faster speed and lower cost can be allowable by the scaling down and these fruitful achievements have been mainly made by the thinning thickness of one key component - Gate Dielectric - at Si based MOSFET (metal-oxide-semiconductor field effect transistor) devices. So far, SiO₂ (silicon dioxide) gate dielectric having the excellent material and electrical properties such as good interface (i.e., Dit ~ 2x10¹⁰ eV⁻¹cm⁻²), low gate leakage current, higher dielectric breakdown immunity (≥10MV/cm) and excellent thermal stability at typical Si processing temperature has been popularly used as the leading gate oxide material. The next generation Si based MOSFETs will require more aggressive gate oxide scaling to meet the required specifications. Since high-k dielectrics provide the same capacitance with a thicker film, the leakage current reduction, therefore, less the standby power consumption is one of the huge advantages. Also, it is easier to fabricate during the process because the control of film thickness is still not in the critical range compared to the same leakage current characteristic of SiO₂ film. HfO₂ based gate dielectric is considered as the most promising candidate among materials being studied since it shows good characteristics with conventional Si technology and good device performance has been reported. However, it has still many problems like insufficient thermals stability on silicon such as low crystallization temperature, low k interfacial regrowth, charge trapping and so on. The integration of hafnium based high-k dielectric into CMOS technology is also limited by major issues such as degraded channel mobility and charge trapping. One approach to overcome these obstacles is using alternative substrate materials such as SiGe, GaAs, InGaAs, and InP to improve channel mobility. / text

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