Microwave photonic applications in the terahertz (THz) region of the spectrum are attracting increasing attention due to the need to find solutions for next-generation (5G/6G) wireless communication systems capable of handling unprecedented data rates. It is crucial to develop millimeter-wave (mm-wave) (30-300GHz) fiber supported transport networks. One of the key questions is, which carrier frequency generation technique will be the most suitable for THz signals above 300 GHz; electronics-based or photonics-based. Since the backbone of the wireless networks is composed by very high-capacity fibre optic cables, the microwave photonic approach has the ultimate advantage of seamless integration with existing optical fibre networks. Although the cost effectiveness is still an open question, simplistic base station architecture with simplified antenna units and high optical component reuse is necessary for enabling a compatible mobile network backhaul. For THz applications a broadband electro-optic modulator (EOM) with a frequency response extending to the sub-terahertz range, high power handling, and very low nonlinear distortions, is required. The objective of this thesis is to study the feasibility of photonic integration and, proof of concept implementations with the effective use of optical components with reduced energy consumption, reduced footprint and offer speed beyond all-electronic implementations. The first study presents a coherent electro-optic photonic integrated circuit deploying generalized Mach-Zehnder interferometer (GMZI) substituting N×1 combiner by an optical N×N discrete Fourier transform (DFT) in order to generate a regularly spaced frequency comb. The proposed design comprises of 1×N splitter that feeds light into a parallel array of N electro-optic phase modulators electrically driven by RF signal with a progressive phase shift with their phase modulated optical outputs processed by an N×N optical DFT. A pragmatic design approach and analytical formulation for implementing MMI based optical DFT in photonic networks composed of waveguide splitters, combiners, and phase-shift elements with necessary circuit diagram for even and odd dimensions are presented. Recently, there has been impressive progress toward ultra-wide band low voltage EOM. The heterogeneous approach of utilizing silicon nitride on lithium niobate waveguide integrated on a single chip is demonstrated for the best optical modulation performance that opens a wide range of opportunities for universal linear optical networks, chip-scale MWP systems, ultra-speed switching of optical communications. Finally, the third study de-scribes the architecture for compact on-chip spectrometry targeting high resolution across the entire C-band to measure the spectral profile of WDM signals reliably and accurately in fixed and flex-grid architectures. The design architecture of technologically viable com-pact on-chip high-resolution wideband spectrometer such as Mach-Zehnder delay interferometers (MZDI), 2×2 directional couplers and multimode interference couplers is presented and verified by software simulation using an industry standard tool. The components simulations that supported the assessment of the feasibility of a spectrometer compliant with the specification made use of the LioniX asymmetric double strip (ADS) waveguide and the low-cost photolithography.

No description available.

Silicon is the dominant material in Microelectronics. Building photonic devices out of silicon can leverage the mature processing technologies developed in silicon CMOS. Silicon is also a very good waveguide material. It is highly transparent at 1550nm, and it has very high refractive index of 3.46. High refractive index enables building high index contrast waveguides with dimensions close to the diffraction limit. This provides the opportunity to build highly integrated photonic integrated circuit that can perform multiple functions on the same silicon chip, an optical parallel of the electronic integrated circuit. However, silicon does not have some of the necessary properties to build active optical devices such as lasers and modulators. For Example, silicon is an indirect band gap material that can’t be used to make lasers. The centro-symmetric crystal structure in silicon presents no electro-optic effect. By contrast, electro-optic polymer can be engineered to show very strong electro-optic effect up to 300pm/V. In this research we have demonstrated highly compact and efficient devices that utilize the strong optical confinement ability in silicon and strong electro-optic effect in polymer. We have performed detailed investigations on the optical coupling to a slow light waveguide and developed solutions to improve the coupling efficiency to a slow light photonic crystal waveguides (PCW). These studies have lead to the demonstration of the most hybrid silicon modulator demonstrate to date and a compact chip scale true time delay module that can be implemented in future phased array antenna systems. In the future, people may be able to realize a photonic integrated circuit for optical communication or sensor systems using the devices we developed in our research. / text

[EN] Optical technologies are the backbone of modern communication systems providing high-speed access to the Internet, efficient inter and intra-data center interconnects and are expending towards growing research fields and new markets such as satel- lite communications, LIDARs (Laser Imaging Detection and Ranging) applications, Neuromorphic computing, and programable photonic circuits, to name a few. Be- cause of its maturity and low-cost, silicon photonics is being leveraged to allow these new technologies to reach their full potential.As a result, there is a strong need for innovative, high-speed and energy-efficient photonic integrated building blocks on the silicon platform to increase the readiness of silicon photonic integrated circuits. The work developed and presented in this thesis is focused on the design and char- acterization of advanced passive and active devices, for photonic integrated circuits. The thesis consists of three main chapters as well as a motivation and concluding sections exposing the rationale and the accomplishments of this work. Chapter one describes the design and characterization of an electro-optical Mach-Zehnder mod- ulator embedded in highly efficient vertical pn junction exploiting the free-carrier dispersion effect in the O-band.. Chapter two is devoted to the design and charac- terization of a novel geometry of asymmetrical multimode interference device and its implementation in a Mach-Zehnder modulator. Chapter three is dedicated to the design and characterization of innovative 1-dimensional photonic crystal designs for slow- lightmodulation applications. An extensive analysis of the main trade-off arising from the use of slow light is presented. / [ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma. / [CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum. / I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place. / Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377

Ce travail de thèse porte sur la réalisation d’un nouveau modulateur électro-optique pouvant s’intégrer sur un substrat SOI. Le modulateur proposé utilise une structure dite à fente ou SLOT formée verticalement par la couche superficielle de silicium du matériau SOI sur laquelle on dépose la couche de BTO puis une couche de silicium amorphe. Le confinement latéral dans ce guide de lumière est réalisé par gravure de la couche de silicium amorphe supérieure. La géométrie du ruban de silicium amorphe est optimisée pour obtenir un mode SLOT en polarisation TM (Transverse Magnétique) pour lequel la quasi-totalité de l’énergie lumineuse est confinée dans la couche active de BTO, ce qui permet d’augmenter l’efficacité du modulateur par rapport à une structure conventionnelle. La conception d’un tel modulateur a nécessité l’élaboration d’un outil numérique multi-physique lors de ce travail de thèse afin de prendre en compte rigoureusement les propriétés d’anisotropie des matériaux ferroélectriques, rarement disponibles dans les logiciels de simulation photonique commerciaux. Plus précisément, nous combinons un solveur de mode optique FVFD avec un solveur radiofréquence de Laplace. Il permet des calculs précis de la modulation d'indice de réfraction et de la réponse électro-optique induite par l’effet Pockels des matériaux anisotropes qui présentent une variation non-diagonale du tenseur de permittivité. L’optimisation du modulateur est réalisée, tant du point de vue optique qu’électrique en radiofréquence. Notamment, pour obtenir un modulateur rapide, il est nécessaire de concevoir une électrode qui possède une onde radiofréquence de même constante de propagation que le mode SLOT optique. Le travail de thèse est aussi consacré à la conception des briques de bases d’optique intégrée passive nécessaires à la réalisation des modulateurs: guides droits, diviseurs de faisceaux de type MMI (MultiMode Interference), de virages et de coupleurs directionnels. Un solveur de mode en coordonnées cylindriques a permis de concevoir des virages à très faibles rayons de courbure de 3,6 µm avec des pertes de radiation inférieures à 0.1 dB/90°. Étonnamment, pour des guides en arête, la réduction du rayon de courbure d’un virage n’implique pas forcément une augmentation des pertes de radiation et conduit à une amélioration des performances du dispositif. Ce résultat est très important parce que le virage est la brique de base qui est la plus difficile à miniaturiser en optique intégrée. Actuellement, les rayons de courbures sont limités à 15 µm dans les technologies utilisant les guides en arête. Ce résultat validé expérimentalement, montre qu’il est possible d’obtenir une densité d’intégration 4 à 5 fois plus importante sans modification de la technologie de fabrication. Le deuxième résultat innovant pour la photonique sur silicium porte sur l’obtention de diviseurs de faisceaux très compacts et insensibles à la polarisation (2.0 x 3.6 µm²). / The aim of this thesis is to explore a new electro-optic modulator which could be integrated on SOI substrate. The ferroelectric material BaTiO3 (BTO) is potentially the most interesting because it has highest linear electro-optic coefficient among perovskite materials, and its monolithic integration on a SOI substrate as a crystalline thin film was demonstrated in INL. The proposed modulator uses a structure SLOT formed vertically through the silicon layer of the SOI on which is deposited the layer of BTO then an amorphous silicon layer. The lateral confinement in the light guiding is formed by etching of the upper amorphous silicon layer. The geometry of the strip-loaded amorphous silicon is optimized to obtain a SLOT TM (Transverse Magnetic) polarization mode in which substantially all of the light energy is confined in the active layer of BTO, thereby increasing the efficiency of modulator with respect to a conventional structure. The design of such a modulator requirs the development of a multi-physics numerical tool to consider carefully anisotropic properties of ferroelectric materials, rarely available in commercial photonics simulation softwares. Specifically, we combine a FVFD optical mode solver with a radiofrequency Laplace solver. It allows precise calculation of the modulation of refractive index and the electro-optical response induced by Pockels effect of anisotropic materials exhibiting non-diagonal change in the permittivity tensor. The optimization of the modulator is carried out, from both aspects optical and electrical in radiofrequency. In particular, to obtain a rapid modulator, it is necessary to design a radiofrequency electrode that has a same wave propagation constant of optical SLOT mode. The thesis is as well devoted to the design of passive building blocks in integrated optics, which are necessary for the implementation of modulators: straight waveguides, beam splitters of type MMI (MultiMode Interference), turns and directional couplers. A cylindrical coordinate’s mode solver realizes the design of turns of very low bending radii of 3.6 microns with radiation losses less than 0.1dB/90°. Surprisingly, for strip-loaded guides, reducing the cornering radius of turns does not necessarily imply an increase in losses of radiation, and so leading to improved device performance. This result is very important because the turns is a basic building block the most difficult to be miniaturized in integrated optics. Currently, the radii of curvature are limited to 15 microns in waveguide technology. The experimental validation shows that it is possible to obtain a 4-5 times larger integration density without changing the manufacturing technology. The second result for innovative silicon photonics is about obtaining very compact and polarization insensitive beam splitters (2.0 x 3.6 μm²).

L'oscillateur optoélectronique (OEO) a été introduit pour la première fois en 1996 par S. Yao et L. Maleki, en tant qu'oscillateur microondes à très faible bruit de phase et obtenu par synthèse directe. Les développements de l'OEO concernent les applications en photonique microondes, télécommunications optiques, radar et traitement du signal. Mais l'OEO devrait aussi pouvoir être utilisé dans le domaine des capteurs. Dans cette thèse nous étudiants plusieurs aspects de l'OEO pour son application à la mesure d'indice de réfraction d'un liquide. Compte tenu de sa structure l'OEO dépend fortement des conditions ambiantes d'utilisation. S'il n'est pas bien optimisé ni contrôlé, il ne peut pas fonctionner correctement sur une longue durée. Nous avons étudié les influences de la température sur le modulateur électrooptique (EOM) et sur le comportement global de l'OEO. Un contrôle de température réduit de façon significative le phénomène de dérive de l'EOM. Afin de la supprimer complètement, nous avons mis au point une instrumentation construite autour d'une carte DSP, permettant de détecter et compenser la dérive du point de fonctionnement optique de l'EOM tout en contrôlant simultanément sa température. Une première technique est basée sur un signal de test, basse fréquence, appliqué à l'électrode DC du modulateur. Une deuxième solution consiste à travailler sur la puissance optique en sortie du modulateur. En combinant les deux on peut profiter des avantages de ces deux méthodes. Utilisant ainsi l'OEO nous avons testé plusieurs configurations pour mesurer l'indice de réfraction de quatre solutions chimiques bien connues, nous avons obtenu une variance de 3 pour mille. Les résultats sont en assez bon accord avec les publications correspondantes. Enfin nous avons aussi introduit une nouvelle méthode pour améliorer les mesures d'indice de réfraction faites à long terme en suivant, grâce à un analyseur vectoriel de réseau, les évolutions au cours du temps du temps de propagation dans la fibre optique. En introduisant à partir de cette mesure une correction aux mesures de la fréquence d'oscillation il est possible de réduire les fluctuations de cette fréquence à seulement 606 Hz, sur une durée de 62 h, ce que l'on peut comparer aux 8 GHz de l'oscillateur. Ainsi le rapport signal à bruit, peut être grandement amélioré lors de la mesure d'indice de réfraction et il doit être possible de diminuer la limite de détection des variations de l'indice de réfraction au cours du temps. / The optoelectronic oscillator (OEO) was first introduced in 1996 by S. Yao and L. Maleki as a very low phase noise microwave oscillator working in direct synthesis. The OEO developments concern applications in microwave photonics, optical telecommunication, radar and high speed signal processing systems but it should also be used in the sensing domain. In this thesis, we study several aspects to apply the OEO to liquid refractive index measurement. Because of its structure the OEO is very dependent on the ambient conditions. If the OEO is not optimized and controlled, it cannot operate well for long duration. We have analyzed the influences of temperature on the electrooptic modulator (EOM) and the global OEO behavior. Temperature control can significantly reduce the drift phenomena of the EOM. In order to totally remove this drift, we have developed a complete digital system, based on a DSP kit, to detect and compensate automatically the EOM optical bias point drift and to control simultaneously its temperature. The first technique is based on a dither signal at low frequency, injected to DC electrode of the EOM. The second one is based on the average optical output power of the EOM. A combination of these two techniques can take advantages from both of them. Using like that the OEO, we have tested several configurations to measure the refractive index of four classical chemical solutions leading to a standard deviation of 3 per thousand. The results are in rather good agreement with previous publications. Finally, we have introduced a new method to improve the long-term refractive index measurement by monitoring, with a vector network analyzer, the variations of the optical delay in the fiber loop of the OEO. Introducing by this way a correction to the long-term frequency measurement it is possible to reduce the oscillation frequency fluctuations to only 606 Hz, compared to the 8 GHz of the oscillator, for a duration of 62 hours. Therefore the signal-to-noise ratio in the refractive index measurement can be enhanced and so the detection resolution of the refractive index variations during time.

Made available in DSpace on 2016-03-15T19:37:45Z (GMT). No. of bitstreams: 1 Heidi Kaori Sato Pertile.pdf: 2322047 bytes, checksum: aaee9a054b94e9557394faaf3251bec9 (MD5) Previous issue date: 2013-01-24 / In this work we present a study on the generation of pulse train in an Erbium doped fiber laser in the hybrid mode-locking regime operating with short pulses at high repetition rates. The short pulses are generated by passive mode-locking technique using carbon nanotubes as saturable absorbers. High repetition rates are generated by active mode-locking technique using a phase modulator. We built cavities with three different mode-locking regimes: active, passive and, finally, hybrid, to compare results. In active and hybrid cavities we used an electro-optical modulator. In passive and hybrid cavities we used a homemade film of a polymer containing carbon nanotubes with diameter of 1 nm. With the cavity operating in the hybrid regime we obtained pulse durations of 1.77 ps with repetition rate of 10 GHz. / Neste trabalho apresentamos um estudo sobre a geração de trem de pulsos em laser à fibra dopada com Érbio operando em regime de acoplamento híbrido de modos, com pulsos curtos a altas taxas de repetição. Os pulsos curtos são obtidos pela técnica de acoplamento passivo de modos utilizando absorvedores saturáveis de carbono. As altas taxas de repetição são obtidas pela técnica de acoplamento ativo de modos através de um modulador. Construímos três cavidades distintas: ativa, passiva e finalmente a híbrida para comparação de resultados. Nas cavidades ativa e híbrida foi utilizado um modulador eletro-óptico de fase e, nas cavidades passiva e híbrida foi utilizado um filme de um polímero (NOA 73TM) contendo nanotubos de carbono com diâmetro de 1 nm por nós fabricado. Com a cavidade em regime híbrido de modos, foi obtida uma duração de pulso de 1,77 ps com uma taxa de repetição de 10 GHz.

Este trabalho apresenta um método desenvolvido pela autora para, através de simulações multifísicas pelo Método dos Elementos Finitos (MEF), servir como ferramenta de apoio ao projeto e fabricação de guias de onda e moduladores eletro-ópticos em óptica integrada, além de possibilitar a análise da performance de moduladores eletro-ópticos. A técnica adotada para a fabricação dos guias de onda ópticos foi a de tensão mecânica. Os parâmetros de geometria (espessura do filme e larguras das trincheiras) e de temperatura de deposição do filme são definidos nas simulações e utilizados no processo de fabricação de guias de ondas em óptica integrada, que servem de base para a fabricação de moduladores eletro-ópticos em substrato cristalino de retículo cúbico. As trincheiras dos guias de onda do tipo canal são construídas em Germanato de Bismuto (BGO - Bi4Ge3O12), a partir da deposição sobre o substrato de um filme fino indutor de tensão mecânica (stress) Nitreto de Silício (Si3N4) e definidas pelos processos de litografia óptica e corrosão seletiva por plasma. Os moduladores são obtidos através da deposição dos eletrodos de alumínio sobre o filme, seguida de Si3N4 dos processos de litografia óptica e corrosão, obtendo-se eletrodos. O processo iterativo proposto inicia-se com os resultados das simulações, em que são definidos os parâmetros de fabricação do filme, da trincheira e dos eletrodos. Após a fabricação desses elementos, o componente é caracterizado e são medidos os parâmetros reais filme e do substrato. Esses valores são realimentados nas simulações para refinar o projeto do componente. O trabalho, além de apresentar todos os passos do processo interativo de simulações, projeto, fabricação e caracterização do componente desejado, indica as dificuldades encontradas na implementação do processo e as atividades futuras a serem desenvolvidas para o aperfeiçoamento do mesmo. / This work presents a method developed by the author to support the project and fabrication of integrated optic waveguides and electro-optic modulators by means of Finite Element Method (FEM) multiphysics simulations, also enabling the electro-optic modulators performance analysis. The technique used for fabricating the optical waveguides was the thermally induced residual stress (ISS). The geometry parameters (film thicknesses and trenches widths) and the film deposition temperature are obtained in the simulations and subsequently used in the integrated optical waveguides fabrication process, which serve as a basic building block for the electrooptic modulators on crystalline cubic lattice substrate. The channel waveguide trenches are built on Bismuth Germanate (BGO Bi4Ge3O12) by depositing a Silicon Nitride (Si3N4) Stress-inducing thin film, being later defined by optical lithography and plasma etching process. Modulators are obtained depositing aluminum on the Si3N4 film followed by the optical lithography and corrosion process, defining electrodes. The proposed iterative process starts with the simulation results that define the fabrication parameters of the film, trench and electrodes. After the fabrication of these elements, the device is characterized and the actual parameters of the film and substrate are measured. These values are fed back into the simulations to refine the component design. The work besides presenting all the simulation-design-fabrication-characterization iterative process for obtaining the devised device also highlights the difficulties encountered in the implementation process along with suggestions of future activities aiming at improving it.

Le premier volet de cette thèse est consacré à la modélisation des phénomènes de transport dans le LN. Partant d'une analyse critique des modèles de bande usuels, nous montrons leur inadéquation dans le cas du LN et nous proposons un modèle de saut basé sur la théorie des petits polarons. Nous étudions d'abord par simulation Monte-Carlo la décroissance d'une population de polarons liés NbLi4+ relaxant vers des pièges profonds FeLi3+. Nous montrons que les pièges FeLi3+ ont des rayons effectifs particulièrement grands, rayons qui augmentent encore à température décroissante, et limitent considérablement les longueurs de diffusion des polarons. Les résultats de simulations sont ensuite confrontés aux résultats expérimentaux obtenus par différentes techniques ; Absorption photo-induite, Raman, Enregistrement holographique et Pompe-sonde. Le deuxième volet de cette thèse est consacré aux applications électro-optiques dans le LN périodiquement polarisé (PPLN). Sous l’effet d’une tension électrique, l’indice de réfraction du PPLN est périodiquement diminué et augmenté, formant ainsi un réseau d’indice activable électriquement. Un premier composant utilisant l’effet électro-optique dans du PPLN a été développé et démontré expérimentalement. Dans ce composant, la lumière est défléchie sous l’effet de la tension électrique par le réseau d’indice. Ce déflecteur de Bragg atteint une efficacité de diffraction proche de 100% avec une faible tension de commande de l’ordre de 5 V. Un deuxième composant a également été proposé, où la lumière se propage perpendiculairement aux parois de domaines du PPLN. Dans cette configuration un réflecteur de Bragg électro-optique peut être réalisé / The first part of this thesis is devoted to the modeling of transport phenomena in the LN. From a critical analysis of the usual band models, we show their inadequacy in the case of LN and we propose a hopping model based on the theory of small polarons. We first study by Monte-Carlo simulation the population decay of bound polarons NbLi4+ in deep traps FeLi3+. We show that the traps (FeLi3+) have particularly large effective radii, which increase further at decreasing temperature, and considerably limit the diffusion lengths of the polarons. The results of simulations are then compared with experimental results obtained by different techniques; Light-induced absorption, Raman, Holographic storage and Pump-Probe. The second part of this thesis is devoted to electro-optical applications in the periodically poled LN (PPLN). Under the effect of an electrical voltage, the refractive index of the PPLN is periodically decreased and increased, thus forming an electrically activatable index grating. A first component using the electro-optical effect in PPLN has been developed and demonstrated experimentally. In this component, the light is deflected under the effect of the electrical voltage by the index grating. This Bragg deflector achieves a diffraction efficiency of close to 100% with a low drive voltage of the order of 5 V. A second component has also been proposed, where light propagates perpendicularly to the domain walls of the PPLN. In this configuration an electro-optic Bragg reflector can be realized

Este trabalho apresenta um método desenvolvido pela autora para, através de simulações multifísicas pelo Método dos Elementos Finitos (MEF), servir como ferramenta de apoio ao projeto e fabricação de guias de onda e moduladores eletro-ópticos em óptica integrada, além de possibilitar a análise da performance de moduladores eletro-ópticos. A técnica adotada para a fabricação dos guias de onda ópticos foi a de tensão mecânica. Os parâmetros de geometria (espessura do filme e larguras das trincheiras) e de temperatura de deposição do filme são definidos nas simulações e utilizados no processo de fabricação de guias de ondas em óptica integrada, que servem de base para a fabricação de moduladores eletro-ópticos em substrato cristalino de retículo cúbico. As trincheiras dos guias de onda do tipo canal são construídas em Germanato de Bismuto (BGO - Bi4Ge3O12), a partir da deposição sobre o substrato de um filme fino indutor de tensão mecânica (stress) Nitreto de Silício (Si3N4) e definidas pelos processos de litografia óptica e corrosão seletiva por plasma. Os moduladores são obtidos através da deposição dos eletrodos de alumínio sobre o filme, seguida de Si3N4 dos processos de litografia óptica e corrosão, obtendo-se eletrodos. O processo iterativo proposto inicia-se com os resultados das simulações, em que são definidos os parâmetros de fabricação do filme, da trincheira e dos eletrodos. Após a fabricação desses elementos, o componente é caracterizado e são medidos os parâmetros reais filme e do substrato. Esses valores são realimentados nas simulações para refinar o projeto do componente. O trabalho, além de apresentar todos os passos do processo interativo de simulações, projeto, fabricação e caracterização do componente desejado, indica as dificuldades encontradas na implementação do processo e as atividades futuras a serem desenvolvidas para o aperfeiçoamento do mesmo. / This work presents a method developed by the author to support the project and fabrication of integrated optic waveguides and electro-optic modulators by means of Finite Element Method (FEM) multiphysics simulations, also enabling the electro-optic modulators performance analysis. The technique used for fabricating the optical waveguides was the thermally induced residual stress (ISS). The geometry parameters (film thicknesses and trenches widths) and the film deposition temperature are obtained in the simulations and subsequently used in the integrated optical waveguides fabrication process, which serve as a basic building block for the electrooptic modulators on crystalline cubic lattice substrate. The channel waveguide trenches are built on Bismuth Germanate (BGO Bi4Ge3O12) by depositing a Silicon Nitride (Si3N4) Stress-inducing thin film, being later defined by optical lithography and plasma etching process. Modulators are obtained depositing aluminum on the Si3N4 film followed by the optical lithography and corrosion process, defining electrodes. The proposed iterative process starts with the simulation results that define the fabrication parameters of the film, trench and electrodes. After the fabrication of these elements, the device is characterized and the actual parameters of the film and substrate are measured. These values are fed back into the simulations to refine the component design. The work besides presenting all the simulation-design-fabrication-characterization iterative process for obtaining the devised device also highlights the difficulties encountered in the implementation process along with suggestions of future activities aiming at improving it.