La spectroscopie EPES (Elastic Peak Electron Spectroscopy) permet de mesurer le pourcentage he d’électrons rétrodiffusés élastiquement par la surface d’un échantillon soumis à un bombardement électronique. C’est une méthode non destructive et extrêmement sensible à la surface. L'objectif de ce travail est de modéliser le cheminement des électrons élastiques dans la matière grâce à une simulation informatique basée sur la méthode Monte Carlo. Cette simulation contribue de manière essentielle à la connaissance et à l'interprétation des résultats expérimentaux obtenus par spectroscopie EPES. Nous avons, de plus, adapté cette simulation à différentes surfaces transformées à l’échelle micrométrique et nanométrique. A l’aide d’une méthode originale, basée sur une description couche par couche du matériau, j’ai réalisé un programme informatique (MC1) rendant compte du cheminement des électrons élastiques dans les différentes couches du matériau. Le nombre d’électrons ressortant de la surface dépend de nombreux paramètres comme : la nature du matériau à étudier, l’énergie des électrons incidents, l’angle d’incidence, les angles de collection des analyseurs. De plus, je me suis intéressé à l’effet de la rugosité de la surface et j’ai démontré qu’elle joue un rôle déterminant sur l’intensité du pic élastique. Ensuite, grâce à l’association de la spectroscopie EPES et de la simulation Monte Carlo, j’ai déduit les modes de croissance de l’or sur substrat d’argent et de cuivre. Les effets de l’arrangement atomique et des pertes énergétiques de surfaces ont ensuite été étudiés. Pour cela, une deuxième simulation MC2 tenant compte de ces deux paramètres a été réalisée permettant d’étudier les surfaces à l’échelle nanométriques. Ces paramètres jusqu’alors non pris en compte dans notre simulation MC1, joue un rôle essentiel sur l’intensité élastique. Ensuite, j’ai obtenu une formulation simple et exploitable pour l’interprétation des résultats obtenus par la simulation MC2 pour un analyseur RFA. Afin de valider, les différents résultats de la simulationMC2, j’ai réalisé des surfaces de silicium nanostructurées, à l’aide de masques d’oxyde d’alumine réalisés par voie électrochimique. J’ai pu créer des nano-pores par bombardement ionique sous ultravide sur des surfaces de silicium. Afin de contrôler la morphologie de la surface, j’ai effectué de l’imagerie MEB ex-situ. La simulation Monte Carlo développée associée aux résultats EPES expérimentaux permet d’estimer la profondeur, le diamètre et la morphologie des pores sans avoir recours à d’autres techniques ex-situ.Cette simulation MC2 permet de connaître la surface étudiée à l’échelle nanométrique. / EPES (Elastic Peak Electron Spectroscopy) allows measuring the percentage he of elastically backscattered electrons from the surface excited by an electron beam. This is a non destructive method which is very sensitive to the surface region. The aim of this work is to model the trajectory of elastic electrons in the matter with a computer simulation based on Monte Carlo method. This simulation allows interpreting experimental results of the EPES spectroscopy. We have moreover adapted this simulation for different surfaces transformed to micrometer and nanometer scales. Using an original method, based on a description of material layer by layer, I realized a computer program (MC1) that takes into account the path of elastic electrons in different layers of material. The number of electrons emerging from the surface depends on many parameters such as: the electron primary energy, the nature of the material, the incidence angle and the collection angles of the analyzer. In addition, I was interested in the effect of surface roughness and I showed that it plays an important role in the intensity of the elastic peak. Then, through an association of the EPES and the Monte Carlo simulation results, I deduced the growth patterns of gold on silver and copper substrates. The effects of the atomic arrangement and the surface excitations were then studied. For this, a new simulation MC2 that takes into account these two parameters has been developed to study nanoscale surfaces. These parameters not previously included in our MC1simulation play a important role in the elastic intensity. Then I have got a simple formula for interpreting the results obtained by the simulation for a RFA analyzer. To validate the different results of the simulation MC2, I realized nano-structured silicon surfaces, using aluminium oxide masks. Nano-pores have been created by Ar+ ions bombardment in UHV chamber on silicon surfaces.To control the morphology of the surfaces, I realized SEM images (Techinauv Casimir) ex-situ. The Monte Carlo simulations, developed here, associated with the EPES experimental results can estimate the depth, the diameter, the morphology of pores without the help of other ex-situ techniques.

Submitted by Geandra Rodrigues (geandrar@gmail.com) on 2018-01-10T14:00:21Z No. of bitstreams: 1 humbertovargasduque (1).pdf: 2897920 bytes, checksum: 904a8ff36edd0079149dfe6e3be69aed (MD5) / Rejected by Adriana Oliveira (adriana.oliveira@ufjf.edu.br), reason: Favor corrigir: Membro da banca: Filho, Jayr de Amorim on 2018-01-23T11:49:04Z (GMT) / Submitted by Geandra Rodrigues (geandrar@gmail.com) on 2018-01-23T13:12:19Z No. of bitstreams: 1 humbertovargasduque (1).pdf: 2897920 bytes, checksum: 904a8ff36edd0079149dfe6e3be69aed (MD5) / Rejected by Adriana Oliveira (adriana.oliveira@ufjf.edu.br), reason: Favor verificar nome do arquivo, existe o número (1) humbertovargasduque (1).pdf on 2018-01-23T13:14:55Z (GMT) / Submitted by Geandra Rodrigues (geandrar@gmail.com) on 2018-01-23T13:22:21Z No. of bitstreams: 1 humbertovargasduque.pdf: 2897920 bytes, checksum: 904a8ff36edd0079149dfe6e3be69aed (MD5) / Approved for entry into archive by Adriana Oliveira (adriana.oliveira@ufjf.edu.br) on 2018-01-24T13:40:22Z (GMT) No. of bitstreams: 1 humbertovargasduque.pdf: 2897920 bytes, checksum: 904a8ff36edd0079149dfe6e3be69aed (MD5) / Made available in DSpace on 2018-01-24T13:40:22Z (GMT). No. of bitstreams: 1 humbertovargasduque.pdf: 2897920 bytes, checksum: 904a8ff36edd0079149dfe6e3be69aed (MD5) Previous issue date: 2012-06-19 / CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Este trabalho consiste no desenvolvimento, implantação e caracterização de um Analisador Cilíndrico Dispersivo 1270 em um Espectrômetro de Perda de Energia de Elétrons (EPEE) operando na região de energia de impacto de 10 a 200 eV, que está sendo desenvolvido no Laboratório de Espectroscopia Atômica e Molecular – LEAM da UFJF. Além do analisador, foram também desenvolvidos diversos trabalhos para otimização do circuito de controle do canhão de elétrons monocromatizado do EPEE, o que gerou ótima estabilidade, acarretando em um ganho considerável em intensidade do feixe produzido e melhoria no manuseio do mesmo. É descrito a implementação da variação angular da plataforma giratória que apóia o Analisador Cilíndrico Dispersivo 1270, bem como a medida desta variação, e também, do sistema de injeção do feixe gasoso através de uma cânula de molibidênio isolada eletricamente, com movimento verticalem relação ao disco onde estão instalados o canhão e analisador. Os testes de desempenho do Espectrômetro foram feitos a partir da análise da resolução de Energia ΔE do EPEE. Obtivemos ótimos resultados quanto a transmissão do feixe de elétrons monocromatizado através da região de colisão chegando até a região de detecção do espectrômetro. É descrito, também, uma avaliação das melhorias feitas no Circuito de Controle do Canhão de Elétrons Monocromatizado, obtendo excelentes resultados quanto a intensidade do feixe de elétrons na faixa de energia de 0,1-100 eV. / This work describes the development, implementation and characterization of a Cylindrical Dispersive Analyzer 1270 on a Electron Energy Loss Spectrometer (EELS) operating in the region of impact energy from 10 to 200eV, which is being developed at the Laboratory of Atomic Spectroscopy and Molecular – LEAM UFJF. In the analyzer, several studies have also been developed to optimize the control circuit of the monochromatized electron gun of the EELS, which generated great stability, resulting in a considerable gain in intensity of the beam produced and improved handling. We describe the implementation of the angular variation of the turntable that supports the Cylindrical Dispersive Analyzer 1270, and the measure of variation, and also injection system of the gas through a beam cannula molybdenum electrically isolated, with vertical movement relative to disk where the monochromatized electron gun and the energy analyzer of electrons are installed. Performance tests of the spectrometer were made from the analysis of the energy resolution ΔE of the EELS. We obtained excellent results about transmission of the electron beam across the monochromatization region collision reaching the detection region of the spectrometer. We describe also an assessment of the improvements made in the Control Circuit of the Monochromatized Electron Gun, obtaining excellent results for the intensity of the electron beam in the energy range 0.1-100 eV.

Spin-polarized electron beam has not yet been produced from an unpolarized electron beam using Stern-Gerlach type spin filter, because of the Lorentz force and Heisenberg uncertainty principle. At present, electron spin detectors and filters work on the basis of spin-dependent scattering of an electron beam from crystal surfaces. Single channel efficiencies of all the spin detectors for electrons are orders of magnitudes lower than the ideal one. Specular reflection type spin-polarized low energy electron diffraction (SPLEED)-spin detectors are having higher single channel efficiencies compared to the conventional Mott detectors. Moreover, multichannel detection can be realized from specular reflection type SPLEED-spin detectors. They have higher effective efficiency than the ideal spin detector. In order to develop specular reflection type spin filter, it is important to develop a spin-polarized low energy electron diffraction system. In addition, SPLEED system allows us to study the spin-orbit and exchange scattering at crystal surfaces. The general direction of the thesis has been the development of spin-polarized low energy electron diffraction (SPLEED) system. This system has been used to investigate the spin-orbit interactions on Ir(100) surface and exchange interactions of Fe grown on Ir(100). The thesis is organized into chapters as follows. Chapter 1 introduce the reader to some of the basic concepts of polarized electrons and the evolution of spin-polarized electron sources and detectors. Sources of polarized electrons are discussed with emphasis on photocathodes such as GaAs and strained GaAs. Widely used spin detector is the Mott detector which works in the higher energy range. The working principle of the Mott detector is discussed. Commonly used spin detector in the lower energy range is the LEED detector. The concept of the LEED detector is also discussed. Working principle and recent developments of specular reflection type SPLEED spin filters are introduced. Evolution of electron spin detector is discussed towards the end of the chapter. Chapter 2 discusses about the two instruments designed and developed during the course of the thesis. The first one is a spin-polarized low energy electron diffraction system working in the reflected electron pulse counting mode in UHV. This system is capable of measuring spin asymmetries due to spin-orbit interaction and exchange interaction. This instrument is useful in understanding structure and magnetism at surfaces as well as helps to develop new spin polarimeter based on SPLEED by evaluating spin asymmetries from different surfaces. All instruments connected to SPLEED system, measurement protocol and controlling software are discussed with some details. Along with this, standard characterization tools such as X-ray diffraction and magneto-optic Kerr effect measurements are discussed. The second instrument is a novel quadratic magneto-optic Kerr effect measurement system using permanent magnets, which is simple, compact and cost-effective. We have used rotating field method to extract QMOKE component in saturation. So there is no need for precise real-time measurement of magnitude and direction of the magnetic field as in the case of vector magnet. This instrument can easily quantify QMOKE coefficients for ferrimagnetic and ferromagnetic thin films and single crystals. Chapter 3 discusses SPLEED experiments carried out on Ir(100)-(1×5)-Hex and Ir(100)-(1×2+2×1)-O surfaces. The surface structure and surface preparation techniques are discussed. The stability of the Ir(100)-(1×5)-Hex surface is evaluated by monitoring the spin asymmetry as the function of time. Within 25 hours after the surface preparation, the profile of the spin asymmetry and the reflected electron count for Ir(100)-(1×5)-Hex surface resembles that of hydrogen adsorbed Ir(100)-(1×5)-H surface. The electron energy-angle of incidence landscape of reflectivity, spin asymmetry and figure of merit are recorded for Ir(100)-(1×2+2×1)-O surface. Many wide regions with a large figure of merit are identified in the E- landscape. Chapter 4 reports SPLEED experiments carried out on Ir(100)-(1×5)-H surface. The comparison between asymmetries evaluated for the Ir(100)-(1×5)-Hex surface after 25 hours and Ir(100)-(1×5)-H surface suggests that Ir(100)-(1×5)-Hex surface is transforming to Ir(100)-(1×5)-H surface, in 25 hours. This can be due to the adsorption of more than four Langmuir of residual hydrogen during this time. The energy-angle landscape of reflectivity, asymmetry and figure of merit are recorded for Ir(100)-(1×5)-H surface in an energy range 20 eV to 100 eV and angle range 10 to 60 . Many regions are identified as the working point for specular reflection type spin filter based on SPLEED. The surface structure and surface preparation techniques are discussed. The stability of the surface is also evaluated. Chapter 5 investigates the growth and magnetic properties of Fe(100) film on Ir(100)-(1×1), Ir(100)-(1×5)-Hex and Ir(100)-(1×2+2×1)-O surfaces. LEED, MEED, LMOKE and QMOKE studies were presented. The growth is found to be layer-by-layer at least up to 20 monolayers (ML) at room temperature. At higher deposition temperature, the MEED oscillations disappear around 3-5 ML. Magnetic anisotropy of the Fe(100) film grown on Ir(100)-(1×2+2×1)-O surfaces is evaluated using LMOKE measurement using Kerr microscope. Simultaneous in-situ LMOKE and MEED measurements were carried out during the deposition. Ferromagnetic ordering with an in-plane easy axis starts above 4.5 ML at room temperature. The Kerr rotation normalized by thickness is evaluated in the pseudomorphic regime and strain relaxed regime. The probing depth of the MOKE is found to be around 14 nm in Fe(100)/Ir(100). An antisymmetric component is observed in the re-magnetization loop measured using MOKE. This antisymmetric loop arises due to the quadratic magneto-optic coupling which is separated by symmetrization and antisymmetrization procedure. The observed quadratic magneto-optic coupling suggests that the analysis based on the assumption that the magneto-optic coupling is linear in magnetization has to be modified. In order to quantify the quadratic magneto-optic coupling parameters, a QMOKE measurement system is developed and measurements were carried out. Chapter 6 discusses SPLEED experiments carried out on various thicknesses of Fe(100) film. Fe(100) films grown on Ir(100) substrate with the thickness less than or equal to 4 ML is not ferromagnetic with in-plane easy axis at room temperature. The non-zero exchange asymmetry observed for 5 ML and above indicates the presence of ferromagnetic ordering. A difference in the profile of exchange asymmetry is observed between pseudomorphic and strain relaxed regime. Large spin-orbit asymmetry is observed for 1 ML and 2 ML Fe(100) which is unexpected from a low atomic number (Z) material. The reason for large spin-orbit asymmetry is still unknown. The energy-angle landscape of reflectivity, exchange asymmetry, spin-orbit asymmetry and figure of merit were evaluated for 21 ML of Fe(100). Many working points were identified for different types multichannel spin filter based on exchange interaction Finally, the various results are summarized and a broad outlook is given.

No description available.

Depuis l'invention du transistor MOS à effet de champ dans les années 60, l'exploitation de cette brique élémentaire a permis une évolution exponentielle du domaine de la microélectronique, avec une course effrénée vers la miniaturisation des dispositifs électroniques CMOS. Dans ce contexte, l'introduction des oxydes "high-κ" (notamment HfO2) a permis de franchir la barrière sub-nanométrique de l'EOT (Equivalent Oxide Thickness) pour l’oxyde de grille. Les travaux actuels concernent notamment la recherche de matériaux "high-κ" et de procédés qui permettraient d'avoir une interface abrupte, thermodynamiquement stable avec le silicium, pouvant conduire à des EOTs de l'ordre de 5Å. L’objectif de cette thèse, était d’explorer le potentiel de l’oxyde LaAlO3 amorphe déposé sur silicium par des techniques d’Épitaxie par Jets Moléculaires, en combinant des études sur les propriétés physico-chimiques et électriques de ce système. Le travail de thèse a d’abord consisté à définir des procédures d'élaboration sur Si de couches très minces (≈4nm), robustes et reproductibles, afin de fiabiliser les mesures électriques, puis à optimiser la qualité électrique des hétérostructures en ajustant les paramètres de dépôt à partir de corrélations entre résultats électriques et propriétés physico-chimiques (densité, stœchiométrie, environnement chimique…) et enfin à valider un procédé d'intégration du matériau dans la réalisation de MOSFET. La stabilité et la reproductibilité des mesures ont été atteintes grâce à une préparation de surface du substrat adaptée et grâce à l'introduction d'oxygène atomique pendant le dépôt de LaAlO3, permettant ainsi une homogénéisation des couches et une réduction des courants de fuite. Après optimisation des paramètres de dépôt, les meilleures structures présentent des EOTs de 8-9Å, une constante diélectrique de 16 et des courants de fuite de l'ordre de 10-2A/cm². Les caractérisations physico-chimiques fines des couches par XPS ont révélé des inhomogénéités de composition qui peuvent expliquer que le κ mesuré soit inférieur aux valeurs de LaAlO3 cristallin (20-25). Bien que les interfaces LAO/Si soient abruptes après le dépôt et que LaAlO3 soit thermodynamiquement stable vis-à-vis du silicium, le système LAO amorphe /Si s’est révélé instable pour des recuits post-dépôt effectués à des températures supérieures à 700°C. Un procédé de fabrication de MOSFETs aux dimensions relâchées a été défini pour tester les filières high-κ. Les premières étapes du procédé ont été validées pour LaAlO3. / Since MOS Field Effect Transistor invention in the 60's, the exploitation of this elementary piece of technology allowed an exponential evolution in the microelectronic field, with a frantic race towards miniaturization of CMOS electronic devices. In this context, the introduction of "high-κ" oxides (notably HfO2) allowed to cross the sub-nanometer barrier of EOT (Equivalent Oxide Thickness) for the gate oxide. Current work are notably related to "high-κ" research materials and processes that would allow an abrupt and thermodynamically stable interface with respect to silicon, that may lead to EOTs of about 5Å. The purpose of this thesis was to explore the potential of amorphous oxide LaAlO3 deposited on silicon by techniques of molecular beam epitaxy, combining studies of the physicochemical and electrical properties of this system. The thesis work has first consisted in defining procedures for the preparation of very thin (≈ 4 nm), robust and reproducible layers on Si in order to allow reliable electrical measurements then to optimize the electrical quality of the hetero-structures by adjusting deposition parameters from correlations between electrical results and physicochemical properties (density, stoichiometry, chemical environment...) and finally to validate a method for integrating the material in the realization of MOSFET. The stability and reproducibility of the measurements were achieved thanks to an adapted surface preparation of the substrate and by the introduction of atomic oxygen during the LaAlO3 deposition, thus allowing homogenization of layers and reducing leakage currents. After optimizing the deposition parameters, the best structures exhibit EOTs of 8-9 A, a dielectric constant of 16 and leakage currents in the range of 10-2 A/cm². Accurate physico-chemical characterizations of thin layers by XPS revealed composition inhomogeneities that can explain why the measured κ is less than values of crystalline LaAlO3 (20-25). Although the LAO/Si interfaces are steep after deposition and LaAlO3 is thermodynamically stable with respect to the silicon, amorphous system LAO/Si has proven unstable during post-deposition annealing carried out at temperatures above 700 ° C. A process for producing MOSFETs with released dimensions was defined to test high-κ field. The first stages of the process have been validated for LaAlO3.