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This thesis is an investigation of the vacuum uv spectra of the phosphorus, phosphoryl, and thiophosphoryl trichlorofluorides in the region 1250 to 3000A. Assignments for absorption bands are made utilizing results from photoelectron spectra and ab initio calculations, oscillator strengths for absorption bands, and CNDO/2 molecular orbital calculations. Results from CNDO/2 calculations are compared with theoretical calculations, and experimental data are discussed with regard to the bonding in the compounds.

Apresentamos aqui resultados de propriedades eletrônicas relacionadas à defeitos complexos em GaAs. Os cálculos autoconsistentes da estrutura eletrônica foram feitos usando o método do espalhamento múltiplo X a junto com o modelo do aglomerado molecular e com os orbitais de superfície saturados com a esfera de Watson. / We repor! resu/ts for e/ectronic properties related to complex defects in GaAs. The self-consistent-fie/d electronic structure ca/culations were performed by using the multiplescattering X a method within framework of Watson-sphere-terminated molecular cluster model. We have simulated, first, the electronic states of the 26-atom clusters: 26Td/1As (tetrahedral interstitial As centered cluster), 26Td/1Ga (tetrahedral interslitial Ga cenlered clusle!) and 26C3v (trigonal cluster centered in the middle of a Ga-As bond).

Apresentamos aqui resultados de propriedades eletrônicas relacionadas à defeitos complexos em GaAs. Os cálculos autoconsistentes da estrutura eletrônica foram feitos usando o método do espalhamento múltiplo X a junto com o modelo do aglomerado molecular e com os orbitais de superfície saturados com a esfera de Watson. / We repor! resu/ts for e/ectronic properties related to complex defects in GaAs. The self-consistent-fie/d electronic structure ca/culations were performed by using the multiplescattering X a method within framework of Watson-sphere-terminated molecular cluster model. We have simulated, first, the electronic states of the 26-atom clusters: 26Td/1As (tetrahedral interstitial As centered cluster), 26Td/1Ga (tetrahedral interslitial Ga cenlered clusle!) and 26C3v (trigonal cluster centered in the middle of a Ga-As bond).

<p>Molecular electronics is envisioned as a possible next step in device miniaturization. It is usually taken to mean the design and manufacturing of electronic devices and applications where organic molecules work as the fundamental functioning unit. It involves the easurement and manipulation of electronic response and transport in molecules attached to conducting leads. Organic molecules have the advantages over conventional solid state electronics of inherent small sizes, endless chemical diversity and ambient temperature low cost manufacturing.</p><p> In this thesis we investigate the switching and conducting properties of photochromic dithienylethene derivatives. Such molecules change their conformation in solution when acted upon by light. Photochromic molecules are attractive candidates for use in molecular electronics because of the switching between different states with different conducting properties. The possibility of optically controlling the conductance of the molecule attached to leads may lead to new device implementations.</p><p> The switching reaction is investigated with potential energy calculations for different values of the reaction coordinate between the closed and the open isomer. The electronic and atomic structure calculations are performed with density functional theory (DFT). It is concluded that there is a large potential energy barrier separating the open and closed isomer and that switching between open and closed forms must involve excited states. </p><p>The conducting properties of the molecule inserted between gold leads is calculated within the Non Equilibrium Green Function theory. The transmission function is calculated for the two isomers with different basis sizes for the gold contacts, as well as the electrostatic potential, for finite applied bias voltages. We conclude that a Au 6s basis give qualitatively the same result as a Au spd basis close to the Fermi level. The transmission coefficient at the Fermi energy is around 10 times larger in the closed molecule compared to the open. This will result in a large difference in conductivity. It is also found that the large difference in conductivity will remain for small applied bias voltages. The results are consistent with earlier work.</p>

Molecular electronics is envisioned as a possible next step in device miniaturization. It is usually taken to mean the design and manufacturing of electronic devices and applications where organic molecules work as the fundamental functioning unit. It involves the easurement and manipulation of electronic response and transport in molecules attached to conducting leads. Organic molecules have the advantages over conventional solid state electronics of inherent small sizes, endless chemical diversity and ambient temperature low cost manufacturing. In this thesis we investigate the switching and conducting properties of photochromic dithienylethene derivatives. Such molecules change their conformation in solution when acted upon by light. Photochromic molecules are attractive candidates for use in molecular electronics because of the switching between different states with different conducting properties. The possibility of optically controlling the conductance of the molecule attached to leads may lead to new device implementations. The switching reaction is investigated with potential energy calculations for different values of the reaction coordinate between the closed and the open isomer. The electronic and atomic structure calculations are performed with density functional theory (DFT). It is concluded that there is a large potential energy barrier separating the open and closed isomer and that switching between open and closed forms must involve excited states. The conducting properties of the molecule inserted between gold leads is calculated within the Non Equilibrium Green Function theory. The transmission function is calculated for the two isomers with different basis sizes for the gold contacts, as well as the electrostatic potential, for finite applied bias voltages. We conclude that a Au 6s basis give qualitatively the same result as a Au spd basis close to the Fermi level. The transmission coefficient at the Fermi energy is around 10 times larger in the closed molecule compared to the open. This will result in a large difference in conductivity. It is also found that the large difference in conductivity will remain for small applied bias voltages. The results are consistent with earlier work. / QC 20101119

Die vorliegende Arbeit beschäftigt sich mit der Präparation strukturell geordneter Dünnschichtverbindungen der Seltenen Erden Ce und Dy mit den Übergangsmetallen Pd, Rh, und Ni sowie der Untersuchung ihrer kristallinen und elektronischen Struktur. Die Präparation der typischerweise 10 nm starken Dünnschichten erfolgte in-situ durch Aufdampfen der Seltenerdmetalle auf einkristalline Übergangsmetallsubstrate oder alternativ durch Kodeposition der Konstituenten auf einen W(110)-Einkristall, jeweils gefolgt durch kurzzeitiges Tempern bei 400 - 1000 °C zur Einstellung der kristallinen Ordnung. Letztere wurde mittels niederenergetischer Elektronenbeugung (LEED) analysiert und auf der Grundlage einer einfachen kinematischen Theorie ausgewertet. Die Untersuchungen der elektronischen Struktur erfolgten mittels winkelaufgelöster Photoemission (ARPES), teilweise unter Nutzung von Synchrotronstrahlung von BESSY. Schwerpunkt bildete dabei das Verhalten der Valenzbänder als Funktion von Struktur und Zusammensetzung der Dünnschichten unter besonderer Berücksichtigung von Oberflächenphänomenen. Gemessene Energiedispersionen wurden mit Ergebnissen eigens dafür durchgeführter LDA-LCAO-Rechnungen verglichen und beobachtete Energieverschiebungen der Bandschwerpunkte um z.T. mehr als 1 eV im Rahmen eines einfachen Modells auf unvollständige Abschirmung der Photoemissionsendzustände zurückgeführt. / The present thesis deals with preparation of structurally ordered thin-film compounds of the rare-earths Ce and Dy with the transition metals Pd, Rh, and Ni as well as with investigations of their crystalline and electronic structures. Typically 10nm-thick films were grown in-situ by deposition of the rare-earth metals onto single crystalline transition-metal substrates or alternatively by codeposition of both constituents onto a W(110) single crystal. In both cases deposition was followed by short-term annealing at temperatures of 400 - 1000 °C to achieve crystalline order. The latter was analyzed by means of low-energy electron-diffraction (LEED) and evaluated on the basis of a simple kinematic theory. The electronic structure was investigated by means of angle-resolved photoemission (ARPES), partially exploiting synchrotron radiation from BESSY. The studies concentrate mainly on the behavior of the valence bands as a function of structure and composition of the thin films, particularly under consideration of surface phenomena. Measured energy dispersions were compared with results of LDA-LCAO calculations performed in the framework of this thesis. Observed shifts of the energy bands by up to 1 eV are attributed in the light of a simple model to incomplete screening of the photoemission final states.

Die vorliegende Arbeit beschäftigt sich mit der Präparation strukturell geordneter Dünnschichtverbindungen der Seltenen Erden Ce und Dy mit den Übergangsmetallen Pd, Rh, und Ni sowie der Untersuchung ihrer kristallinen und elektronischen Struktur. Die Präparation der typischerweise 10 nm starken Dünnschichten erfolgte in-situ durch Aufdampfen der Seltenerdmetalle auf einkristalline Übergangsmetallsubstrate oder alternativ durch Kodeposition der Konstituenten auf einen W(110)-Einkristall, jeweils gefolgt durch kurzzeitiges Tempern bei 400 - 1000 °C zur Einstellung der kristallinen Ordnung. Letztere wurde mittels niederenergetischer Elektronenbeugung (LEED) analysiert und auf der Grundlage einer einfachen kinematischen Theorie ausgewertet. Die Untersuchungen der elektronischen Struktur erfolgten mittels winkelaufgelöster Photoemission (ARPES), teilweise unter Nutzung von Synchrotronstrahlung von BESSY. Schwerpunkt bildete dabei das Verhalten der Valenzbänder als Funktion von Struktur und Zusammensetzung der Dünnschichten unter besonderer Berücksichtigung von Oberflächenphänomenen. Gemessene Energiedispersionen wurden mit Ergebnissen eigens dafür durchgeführter LDA-LCAO-Rechnungen verglichen und beobachtete Energieverschiebungen der Bandschwerpunkte um z.T. mehr als 1 eV im Rahmen eines einfachen Modells auf unvollständige Abschirmung der Photoemissionsendzustände zurückgeführt. / The present thesis deals with preparation of structurally ordered thin-film compounds of the rare-earths Ce and Dy with the transition metals Pd, Rh, and Ni as well as with investigations of their crystalline and electronic structures. Typically 10nm-thick films were grown in-situ by deposition of the rare-earth metals onto single crystalline transition-metal substrates or alternatively by codeposition of both constituents onto a W(110) single crystal. In both cases deposition was followed by short-term annealing at temperatures of 400 - 1000 °C to achieve crystalline order. The latter was analyzed by means of low-energy electron-diffraction (LEED) and evaluated on the basis of a simple kinematic theory. The electronic structure was investigated by means of angle-resolved photoemission (ARPES), partially exploiting synchrotron radiation from BESSY. The studies concentrate mainly on the behavior of the valence bands as a function of structure and composition of the thin films, particularly under consideration of surface phenomena. Measured energy dispersions were compared with results of LDA-LCAO calculations performed in the framework of this thesis. Observed shifts of the energy bands by up to 1 eV are attributed in the light of a simple model to incomplete screening of the photoemission final states.