The main idea that lead to the development of EC (electronic commutation) motors is to remove from commutation motors, called DC (direct current) motors, the mechanical commutation system i.e. the cylinder brushes and the commutator that limits in most of the applications the longevity of direct current motors. The commutator is the source of electromagnetic interference and it limits the motor speed. At the same time it is required to keep the outstanding features of DC motors, mainly the multiple overload capacity, high starting torque, low time constant and small dimensions. Thesis introduces the problematic of electrically switched machines and their possible construction versions. Based on obtained findings there is performed an analytical calculation of EC-machine with classical stator (made with two grooves on pole and phase) and with segmental stator for given parameters. With the known parameters of the machines from personal design there were created models of both machine types, and the results obtained from the program FEMM were compared to those of analytical calculations.

In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors.

Les travaux de recherche présentés dans cette thèse concernent les petites machines à aimants permanents, à flux axial et à auto-commutation électronique ayant la topologie d’un rotor intérieur discoïdal avec des aimants Nd-Fe-B montés en surface et de deux stators extérieurs identiques, chacun avec enroulement triphasé distribué dans des encoches. Après l’examen des topologies candidates pour applications d’entraînement direct basse-vitesse, une modélisation électromagnétique analytique de pré-dimensionnement d’un prototype de telles machines est réalisée. Ensuite, une approche numérique originale est développée et couplée à l’optimisation géométrique des aimants rotoriques en vue de réduire les harmoniques d’espace de l’induction magnétique dans l’entrefer et aussi les ondulations du couple électromagnétique. Des nombreux tests expérimentaux sont effectués sur le prototype de machine pour vérifier son dimensionnement ainsi que pour valider la stratégie d’auto-commutation électronique et de contrôle de base / The research work presented in this thesis is concerned with small electronically-commutated axial-flux permanent-magnet (AFPM) machines having the double-sided topology of an inner rotor with surface-mounted Nd-Fe-B magnets, sandwiched between two outer slotted stators with distributed three-phase windings. After reviewing the small double-sided AFPM machine candidate topologies for low-speed direct-drive applications, the thesis hinges on the size equations and the analytical electromagnetic design of the inner-rotor AFPM (AFIPM) machine topology under study. Original methods of modelling and design optimization of a small prototype AFIPM machine are then proposed with the view to reducing the airgap flux density space-harmonics and the torque ripple by rotor-PM shape modification. Extensive experimental tests are carried out on the small three-phase AFIPM machine prototype in order to validate its proper design and to check its electronic commutation and basic control technique

Nous présentons dans ce document, notre étude de la conception et la réalisation de VMOS et de diodes Schottky et JBS en carbure de silicium. Ce travail nous a permis d'optimiser et de fabriquer des diodes utilisant une barrière Schottky en Tungsten de différentes tenues en tension entre 1,2kV et 9kV. De plus, notre étude du VMOS nous a permis d'identifier la totalité des problèmes auxquels nous faisons face. Ainsi, nous avons pu améliorer ces composants tout en essayant de nouveaux designs tels que le VIEMOS et l'intégration monolithique de capteurs de temperature et de courant. / In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors.