Thesis (doctoral)--Helsinki University of Technology, 2007. / Includes bibliographical references. Also available on the World Wide Web.

Thesis, PlanB (M.S.)--University of Wisconsin--Stout, 1998. / Includes bibliographical references.

Thesis (Ph. D.)--Lehigh University, 2004. / Includes vita. Includes bibliographical references (leaves 179-187).

Thesis (M.S. in materials science and engineering)--Washington State University, August 2008. / Title from PDF title page (viewed on Mar. 11, 2009). "School of Mechanical and Materials Engineering." Includes bibliographical references.

Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010. / Committee Chair: May, Gary; Committee Member: Brand,Oliver; Committee Member: Hasler,Paul; Committee Member: Kohl,Paul; Committee Member: Shamma,Jeff. Part of the SMARTech Electronic Thesis and Dissertation Collection.

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into SiO₂ etch mask by reactive ion etching, pattern transfer through AlGaInP/GaInP layer by inductively coupled plasma (ICP) etching and a selective undercut wet etch to create the freestanding membrane. The chlorine-based ICP etching conditions are optimized to achieve a vertical sidewall. The photonic crystal structures with periods of a=160-480nm are produced. / Singapore-MIT Alliance (SMA)

No description available.

No description available.

The use of radio frequency (rf) plasma techniques to produce fine structures of precise geometry is widespread in the microelectronics industry. An important factor influencing the functionality of fabricated devices is the wall angle of these structures. In certain applications vertical walls are required - for example to minimise mask degradation and maximise gate densities; in others a sloping sidewall is preferred - to minimise stress in metal coatings when making electrical contact through 'via' holes, for instance. This fine control cannot be achieved on micron and sub-micron scale devices using conventional 'wet' chemical processing techniques and has led to the adoption of so-called 'dry' processing techniques using plasmas. Both vertical and sloping wall profiles can be produced depending upon the plasma conditions. It is apparent, therefore, that a thorough understanding of the processes affecting the etch profile is important. Reactive ion etching (RIE) has been employed to produce micron, and sub-micron size structures in polyimide using an oxygen plasma. Present models of etch directionality all make the initial assumption that the directional component of the etching process can be attributed solely to O2+ ion bombardment of the exposed horizontal surface of the wafer driven by the electric 'sheath' field developed above the electrode. Whether species such as O+ and even multiply charged reactive species such as O++ and O+++ can legitimately be neglected in formulating such a model has yet to be established. That such multiply ionized species exist, however, is highly probable given that plasmas are well known to emit strongly in the ultraviolet. The etching system developed to investigate these problems was equipped with diagnostic techniques including optical emission spectroscopy, mass spectrometry, and a grid energy analyser. The optical emission spectrometer was novel in being capable of measuring emission from the far-ultraviolet emission spectrum of the plasma and was therefore able to detect the high energy ultraviolet light and the singly and multiply ionised species from which this radiation is emitted. Using this technique the role of multiply-ionised species in controlling etch anisotropy was investigated. Results are also presented, obtained from a retarding grid, particle energy analyser built into the surface of the earth electrode, which indicate increased charged particle flux and energy at low pressure providing further information with regard to the process dynamics. The influence of gas pressure and rf excitation frequency on the resultant etch profile have been investigated. Results are presented showing the presence of doubly-ionised atomic oxygen O++ in the plasma. It is shown in this work that O++ also has a role in etch anisotropy at low pressure. This and other more highly charged species need to be considered, therefore, in formulating models of etch anisotropy, etch rate, and etch chemistry and reaction mechanisms. The role of ultraviolet irradiation which is itself of sufficient energy to induce surface reactions must also be considered.

Thesis (M.S.)--West Virginia University, 2004. / Title from document title page. Document formatted into pages; contains viii, 113 p. : ill. (some col.). Vita. Includes abstract. Includes bibliographical references (p. 66-81).