In der vorliegenden Promotion werden zwei ausgewählte Iridate mit Elektronen-Spin-Resonanz untersucht. Bei der ersten Probe handelt es sich um das Doppelperowskit Ba2YIrO6, das nach simpler theoretischer Auffassung kein paramagnetisches Signal besitzen sollte. Allerdings zeigen unterschiedliche magnetische Messungen schwache magnetische Spinkorrelationen. Mit Hilfe von ESR kann die Ursache dieser Signale paramagnetischen Verunreinigungen zugeschrieben werden. Zudem kann der Ursprung dieser Defekte mit zwei unterschiedlichen Oxidationsstufen des Iridiums assoziiert werden.    Bei der zweiten untersuchten Iridat-Probe La2CuIrO6 handelt es sich ebenfalls um ein Material mit Doppelperowskit-Struktur, allerdings interagieren hier zwei grundlegend verschiedene Spinsorten miteinander. Zum einen der sich aus der starken Spin-Bahn-Kopplung ergebende Jeff=1/2 Pseudospin des Iridats und zum anderen der reine S=1/2 Spin des Kupferions. Innerhalb der Kristallstruktur ergibt sich daraus eine komplexe antiferromagnetische Spinstruktur mit einer kleinen Verkippung der Spins. Diese nicht-kollineare Spinanordnung geht auf die Dzyaloshinskii-Moriya-Wechselwirkung zurück und führt letztendlich zu einem kleinen ferromagnetischen Nettomoment. Mit ESR konnte dabei vor allem die temperaturabhängige Wechselwirkung der einzelnen Untergitter gezielt untersucht werden. Zusätzlich zum experimentellen Teil war eine der Kernaufgaben dieser Arbeit die technische Realisierung eines Fabry-Perot Resonators. Ziel des Resonators ist dabei die Erhöhung des Signal/Rauschverhältnisses sowie die Implementierung die Probe innerhalb der Messapparatur zu rotieren. Um ein besseres Verständnis des zugrundeliegenden Resonanzverhaltens zu erhalten, wurden zudem einige Simulationen zum Verhalten der elektromagnetischen Wellen innerhalb des Resonators durchgeführt.

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1%. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1-lambda MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitransparent distributed Bragg reflector (DBR) on the top; b) 5.5-lambda MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5.5-lambda MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1%. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1-lambda MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitransparent distributed Bragg reflector (DBR) on the top; b) 5.5-lambda MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5.5-lambda MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.

Tato diplomová práce se zabývá technologií tlustých vrstev a jejím možným použitím pro nekonvenční aplikace. První část práce je rešeršní a zaměřuje se především na aplikace tlustovrstvé technologie v různých oblastech použití. V teoretické části práce je dále popsána technologie LTCC, včetně technologických postupů výroby. V praktické části jsou řešeny dvě aplikace v tlustovrstvé technologii. Jedná se návrh a výrobu vysokofrekvenčního filtru a optického senzoru tlaku technologií LTCC. V závěru práce jsou provedena měření a jsou zhodnoceny dosažené výsledky.

This thesis treats the development of packaging and integration methods for the cost-efficient encapsulation and packaging of microelectromechanical (MEMS) devices. The packaging of MEMS devices is often more costly than the device itself, partly because the packaging can be crucial for the performance of the device. For devices which contain liquids or needs to be enclosed in a vacuum, the packaging can account for up to 80% of the total cost of the device. The first part of this thesis presents the integration scheme for an optical dye thin film NO2-gas sensor, designed using cost-efficient implementations of wafer-scale methods. This work includes design and fabrication of photonic subcomponents in addition to the main effort of integration and packaging of the dye-film. A specific proof of concept target was for NO2 monitoring in a car tunnel. The second part of this thesis deals with the wafer-scale packaging methods developed for the sensing device. The developed packaging method, based on low-temperature plastic deformation of gold sealing structures, is further demonstrated as a generic method for other hermetic liquid and vacuum packaging applications. In the developed packaging methods, the mechanically squeezed gold sealing material is both electroplated microstruc- tures and wire bonded stud bumps. The electroplated rings act like a more hermetic version of rubber sealing rings while compressed in conjunction with a cavity forming wafer bonding process. The stud bump sealing processes is on the other hand applied on completed cavities with narrow access ports, to seal either a vacuum or liquid inside the cavities at room temperature. Additionally, the resulting hermeticity of primarily the vacuum sealing methods is thoroughly investigated. Two of the sealing methods presented require permanent mechanical fixation in order to complete the packaging process. Two solutions to this problem are presented in this thesis. First, a more traditional wafer bonding method using tin-soldering is demonstrated. Second, a novel full-wafer epoxy underfill-process using a microfluidic distribution network is demonstrated using a room temperature process. / <p>QC 20130325</p>

Title: Magnetic nanostructures for recording and optical sensors Author: Eva Lišková Department: Institute of Physics, Charles University Supervisor: Prof. Ing. Štefan Višňovský, DrSc. Abstract: Magneto-optical (MO) spectra of multilayered structures with enhanced MO effect were studied using the polar and longitudinal Kerr spectroscopy with oblique angle of light incidence in the photon energy range 1.2 eV to 5 eV. The samples with Fabry- Perot cavity like architecture, were modeled using Yeh matrix formalism. Two sets of samples, with composition FeF2/Fe/FeF2 and AlN/Fe/AlN, were prepared by molecular beam epitaxy and sputtering. The relations were studied between the position of the enhanced peak in the MO spectra and the structure. Second part of this work was devoted to the Pt/Co/Pt structures and the influence of the ion implantation on MO spectra and structural composition. The studied multilayer structures present interest for MO sensor and memory applications. Keywords: Magneto-optical Kerr effect, Magneto-optical sensor, Fabry-Perot resonator, Ion implantation

The following work deals with basics of fiber optics, history of fiber optics, and methods of measuring physical quantities with the use of fiber optic sensors. The work includes facts about physics, chemistry and biology - these elements are necessary for a full understanding of the issue. In order to create an optical fiber temperature sensor based on Fabry Perot resonator principle, several methods of manufacturing the optical cavity are investigated. A practical part of paper consist in the manufacturing of the miniature fiber thermometer, its coating and testing.

Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si-diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1% [1]. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1 MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitranparent distributed Bragg reflector (DBR) on the top; b) 5:5 MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5:5 MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.:List of Abbreviations and Symbols 1 Introduction and motivation 2 Theory 2.1 Electronic band structure of semiconductors 2.2 Light emitting diodes (LED) 2.2.1 History of LED 2.2.2 Mechanisms of light emission 2.2.3 Electrical properties of LED 2.2.4 LED e ciency 2.3 Si based light emitters 2.4 Microcavity enhanced light emitting pn-diode 2.4.1 Bragg reflectors 2.4.2 Fabry-Perot resonators 2.4.3 Optical mode density and emission enhancement in coplanar Fabry-Perot resonator 2.4.4 Design and optical properties of a Si microcavity LED 3 Preparation and characterisation methods 3.1 Preparation techniques 3.1.1 Thermal oxidation of silicon 3.1.2 Photolithography 3.1.3 Wet chemical cleaning and etching 3.1.4 Ion implantation 3.1.5 Plasma Enhanced Chemical Vapour Deposition (PECVD) of silicon nitride 3.1.6 Magnetron sputter deposition 3.2 Characterization techniques 3.2.1 Variable Angle Spectroscopic Ellipsometry (VASE) 3.2.2 Fourier Transform Infrared Spectroscopy (FTIR) 3.2.3 Microscopy 3.2.4 Electroluminescence and photoluminescence measurements 4 Experiments, results and discussion 4.1 Used substrates 4.1.1 Silicon substrates 4.1.2 Silicon-On-Insulator (SOI) substrates 4.2 Fabrication and characterization of distributed Bragg reflectors 4.2.1 Deposition and characterization of SiO2 4.2.2 Deposition of Si 4.2.3 Distributed Bragg Reflectors (DBR) 4.2.4 Conclusions 4.3 Design of Si pn-junction LED 4.4 Resonant microcavity LED with CoSi2 bottom mirror 4.4.1 Device preparation 4.4.2 Electrical Si diode characteristics 4.4.3 EL spectra 4.4.4 Conclusions 4.5 Si based microcavity LED with two DBRs 4.5.1 Test device 4.5.2 Device fabrication 4.5.3 LED on SOI versus MCLED 4.5.4 Conclusions 5 Summary and outlook 5.1 Summary 5.2 Outlook A Appendix A.1 The parametrization of optical constants A.1.1 Kramers-Kronig relations A.1.2 Forouhi-Bloomer dispersion formula A.1.3 Tauc-Lorentz dispersion formula A.1.4 Sellmeier dispersion formula A.2 Wafer holder List of publications Acknowledgements Declaration / Versicherung

Tunneling phenomenon has been studied since the time of Sir Isaac Newton. In the case of neutron tunneling phenomenon, it is the quantum mechanics wave-particle duality which manifests itself. In this case, particularly, the neutron wave-packet under total reflection condition suffers the so-called frustrated total reflection as known in standard optics. More accurately, this tunneling phenomenon shows itself via sharp dips in the plateau of total reflection. The prerequisite to observe such quantum mechanics phenomenon lies within a thin film Fabry-Perot resonator configuration. This thin film Fabry-Perot resonator geometry consists of two reflecting mirrors separated by a transparent material from a neutron optics viewpoint. In view of the specific neutron scattering properties related to the spin of the neutron wave-packet. As a direct proof, isotopic nickel based thin films Fabry-Perot resonator have been fabricated by depositing thin film of nickel by ion beam sputtering. The vacuum chamber was pumped down to the pressure of 10-8 mbar and deposition was performed at pressure of 2x10-4 mbar. The deposition rate was kept at 1.5 nm / minute and thickness layers were monitored by a calibrated quartz microbalance. Unpolarized neutron reflectometry measurements were carried out at the ORPHEE reactor using the time-of-flight EROS reflectometer. The incidence neutron wavelength varied between 3 – 25 Å. The grazing angle and angular resolution were of the order of 0.8˚ and 0.05 respectively. The software program, a Matlab routine for the simulation of specular X-ray and neutron reflectivity data with matrix technique, was employed to simulate the phenomenon and thereafter the experimentally obtained data and calculated (theoretical) data were compared. From the analysis of the comparison, a conclusion was drawn about the agreement between experimental data and theoretical data. The tunneling phenomenon has been observed in nanostructured isotopic nickel based thin film Fabry-Perot resonator. It manifested itself by the existence of dips, tunneling resonances, in the total reflection plateau due to quasi-bound states in the isotopic nickel based thin film Fabry-Perot resonator. In total, there were 7 tunneling resonances. The full widths at half maximum of these dips were found to decrease with increasing momentum wave vector transfer (Q) and this correlated to the neutron lifetime in the nanostructured isotopic nickel based thin film Fabry-Perot resonator. / Physics / M. Sc. (Physics)