Abstract This study concludes the position feedback from discussing about the trend of the evolution of flat panel display ¡]FPD¡^technology by using the path dependence theory. Based on this theory, the research on the valuation curve of application forms the model of valuable development. Therefore, the position feedback of FPD technology is established according to the system dynamic theory. The key factors of position feedback are defined as below: ¡]1¡^The ages of digital TV, ¡]2¡^Light¡Bthin¡Bshort¡Bsmall¡Brapid ¡]3¡^ Good quality of CRT¡]4¡^Low cost¡]5¡^Market scale¡K etc.. It explains the character of every key factor of path dependence for FPD. In accordance with the application of valuation curve, FPD is classified into six types¡GLCD¡BPDP¡BLCOS¡BDLP¡BFED and OLED. The classification is also based on JPRI(Japan picture research institute) standard¡G ¡]1¡^the way of luminescence¡]2¡^ the size of screen¡]3¡^ the outward appearance¡]4¡^ weight¡]5¡^ Brightness¡]6¡^ Contrast Ratio¡]7¡^ View Angle¡]8¡^ Resolution¡]9¡^ response time¡]10¡^ consume power¡]11¡^ life time¡]12¡^ flexibility¡]13¡^ product application scope etc. Use the weighted index method to calculate the sum of valuation for six types of FPD technology. Drawing a valuation curve by weighted index¡]Y axis¡^ and time table(X axis). The conclusions of this study are as follows: 1. FPD technology has the obvious tendency of the path dependence. 2. By the path dependence theory, the technology of FED and OLED have potential for replacing the LCD-TFT technology. The conclusions above are significant to the management in the following prospects. 1.The mode of position feedback of high technology industry will have many references for the developmental path of industry. 2.Based on Taiwan¡¦s photo-electric industry, it is necessary to penetrate the tendency of Japan¡¦s research in order to promote the FPD industry in Taiwan. Key word¡Gpath dependence¡Bsystem dynamic theory¡Bflat panel display

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Flat panel displays (FPDs) are microfabricated devices that are often fabricated on specialized glass substrates known as display glass. The surface chemistry of the outer few nanometers of display glass can have an important influence on FPD performance and yield. Dsiplay glass surface characterization is difficult because (i) display glass surface composition varies significantly from its bulk composition; (ii) high-surface area forms of glass, such as fibers and powders, may not have the same surface composition as melt-formed planar surfaces, and (iii) the surface composition of display glass may be altered through exposure to chemical treatments commonly used during flat panel display production, including acids, bases, etchants, detergents, and plasmas. We have performed a detailed surface composition of Eagle XG®, a widely used commercial display glass substrate, using a range of surface analytical techniques including time-of-flight secondary ion mass spectrometry (ToF-SIMS), angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and low energy ion scattering (LEIS). The information from these techniques has given us a detailed understanding of the elemental surface composition and surface hydroxylation of Eagle XG® at length scales ranging from ca. 10 nm from the surface to the outermost atomic layer. These analyses reveal that the surface composition of Eagle XG® varies significantly from its bulk composition, having generally lower concentrations of Al, B, Mg, Ca, and Sr, and higher concentrations of Si. Treatment with an industrial alkaline detergent results in significant recovery of aluminum concentration at the Eagle XG® surface, while treatment with hydrochloric and hydrofluoric acid result in further depletion of Al, B, Mg, Ca, and Sr at the sample surface.We used ToF-SIMS to quantify surface hydroxyls at the sample surface of this material. The SiOH+/Si+ peak area ratio was a useful metric of surface hydroxylation. We studied the effects of adventitious surface contamination on the measurements by analyzing samples dosed with perdeuterated triacontane, a model alkane, prior to analysis. Thick triacontane overlayers suppressed the SiOH+ signal, indicating that this approach gives inaccurately low estimates of surface hydroxylation for samples with high degrees of surface contamination, and accurate measurements are only possible for very-clean surfaces. The number of of hydroxyls on Eagle XG® surfaces varied as the surfaces were exposed to different chemical treatments. HF- and HCl- treated surfaces had the highest degree of hydroxylation, while detergent-treated surfaces had the lowest.

The characterization and fabrication of active matrix thin film transistors (TFTs) has been studied for an addressable microfluidic electrowetting channel device as application. A new transparent semiconductor material, Amorphous Indium Gallium Zinc Oxide (a-IGZO), is used for TFT, which shows high electrical performance rather than amorphous silicon based TFT; higher mobility and even higher transparency. The purpose of this dissertation is to optimize each TFT process including the optimization of a-IGZO properties to achieve robust device for application. To minimize hysteresis of TFT curves, the gate dielectric is discussed extensively in this dissertation. By optimizing gas ratio of NH3SiH4, it is found that the TFT with NH3 rich SiNx gate dielectric deposited with NH3/SiH4 =5.1 and stoichiometric SiO2 demonstrates best condition to reduce hysteresis. a-IGZO films is investigated as a function of power and substrate bias effect which affects to electrical performance; the higher power and substrate bias increase the carrier density in the film and mainly cause threshold voltage(VT) to shift in the negative gate voltage direction and mobility to increase, respectively. In addition, the powerful method to estimate the electrical properties of a-IGZO is proposed by calculating O2 and IGZO flux during sputtering in which the incorporation ratio with O2/IGZO ≈1 demonstrates the optimized a-IGZO film for TFT. It is confirmed that both physical and chemical adsorption affects the electrical property of a-IGZO channel by studying TFT-IV characteristics with different pressure and analyzing X-ray photoelectron spectroscopy (XPS), which mainly affects the VT instability. The sputtered SiO2 passivation shows better electrical performance. To achieve electrically compatible (lower back channel current) a-IGZO film to SiO2 sputter passivated device, a-IGZO TFTs require oxygen rich a-IGZO back channel by employing two step a-IGZO deposition process (2nd 10nm a-IGZO with PO2 = 1.5mTorr on 1st 40nm a-IGZO with PO2=1mTor). Electrowetting microfluidic channel device as application using a-IGZO TFTs is studied by doing preliminary test. The electrowetting channel test using polymer post device platform is candidate for addressable electrowetting microfluidic channel device driven by active matrix type a-IGZO TFT.

本文檢視了包含半導體、面板、發電太陽能、及發光二極體等四種在最近十五年來高科技電子設備產業於日本、韓國、中國、新加坡、馬來西亞、與印度等亞洲國家中發展的情況。文中包含針對不同高科技電子設備產業的高研發成本、高資本密集、涉及國防及國土安全的高敏感性、及以設備搭售服務的商業模式等特性，在面對亞洲國家在文化、制度、及經濟上類似但卻又不完全相同的環境時，跨國高科技電子設備商所採取因應策略的探討。 / This thesis reviews the development of four targeted high-tech equipment industries of Semiconductor, Flat Panel Display, Photovoltaic (PV) Solar, and Light Emitting Diode (LED) in Asia countries including Japan, South Korea, China, Singapore, Malaysia, and India. Business and operational strategies from individual high-tech equipment industries characterized of high R&D cost, high capital investment, trade sensitive requirement, and equipment bundling service business strategy dealing with similar but not identical cultural, institutional, and economic environment of targeted Asia countries were also reviewed.