The concentration of tin and palladium in catalysts used in electroless copper plating have been determined by Rutherford backscattering spectrometry with high energy (2-5) MeV ⁴He⁺. The tin:palladium ratio in the catalyst decreases when exposed to an alkaline solution. X-ray photoelectron spectroscopy has confirmed this result and has shown the palladium in the catalyst is present as palladium metal and the tin is present, probably as an oxidized species, to a depth of about 30 Å. Catalysts for the electroless plating of copper are obtained by the reaction of Pd(II) and Sn(II). The extent of the reaction and the concentrations of the reaction products depend on the solution conditions. Conflicting results obtained in previous investigations of tin-palladium catalysts can be explained on this basis. Single crystals of gallium arsenide (GaAs(100)) were found to dissolve in synthetic lung fluid (Gamble solution). The concentrations of arsenic and gallium in the Gamble solution as well as the arsenic:gallium ratio on the GaAs surface increased continuously as the time of exposure to the Gamble solution increased. X-ray photoelectron spectroscopic studies of the gallium arsenide surface showed that arsenic migrated to the surface and it was oxidized to a species resembling As₂O₃ and finally solubilized by the Gamble solution. The solubility of gallium was governed primarily by the formation of stable complexes with the citrate and phosphate ions in the Gamble solution. Zinc that was present in the single crystals of gallium arsenide also migrated to the surface.

Thesis (Ph.D.)--Chinese University of Hong Kong ,2001. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Hui Yat Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 106-108). / Acknowledgments / Abstract / Chapter 1. --- Introduction --- p.1 / Chapter 2. --- Theory / Chapter 2.1 --- Optical Waveguide --- p.4 / Chapter 2.1.1 --- Optical Waveguide Classification / Chapter 2.1.2 --- Theoretical Analysis of 2-dimensional Step Index Waveguides / Chapter 2.2 --- Optical Waveguides Measurement --- p.18 / Chapter 2.2.1 --- Refractive Index Measurement / Chapter 2.2.2 --- Loss Measurement / Chapter 2.3 --- Ion Implantation and Annealing --- p.36 / Chapter 2.4 --- Refractive Index Change --- p.40 / Chapter 3. --- Equipments and Their Experimental Setup / Chapter 3.1 --- Light Source-Laser Diode --- p.42 / Chapter 3.2 --- Ellipsometry Measurement System --- p.45 / Chapter 3.2.1 --- Ellipsometry Measurement System and its Existing Problems / Chapter 3.2.2 --- Improvement of the Original System / Chapter 3.2.3 --- System Calibration / Chapter 3.3 --- Reflectance Measurement System --- p.51 / Chapter 3.3.1 --- System Design and Setup / Chapter 3.3.2 --- System Calibration / Chapter 3.4 --- End-Coupling Measurement System --- p.56 / Chapter 3.4.1 --- System Setup / Chapter 3.4.2 --- System Calibration / Chapter 4. --- Experiment / Chapter 4.1 --- Samples Preparation --- p.77 / Chapter 4.2 --- Refractive Index Measurement by Ellipsometer --- p.80 / Chapter 4.3 --- Refractive Index Measurement by Reflectance --- p.84 / Chapter 4.4 --- Waveguide Measurement --- p.88 / Chapter 4.4.1 --- Fiber-Waveguide Coupling / Chapter 4.4.2 --- Lens-Waveguide Coupling / Chapter 5. --- Results and Discussion / Chapter 5.1 --- Refractive Index Change and Waveguide Formation --- p.94 / Chapter 5.2 --- Mechanism of Refractive Index Change --- p.100 / Chapter 6. --- Conclusion --- p.103 / Chapter 7. --- Improvement and Extension --- p.105 / Reference --- p.106 / Appendices / Chapter A. --- Thick.m --- p.VI / Chapter B. --- Distrib.m --- p.IX

by Mok Wing Keung. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves 149-154). / Acknowledgement --- p.i / Abstract --- p.ii / Table Of Contents --- p.iii / List Of Figures --- p.v / List Of Tables --- p.ix / List Of Plates --- p.x / Chapter Chapter One --- Introduction / Chapter 1.1 --- General introduction --- p.1 / Chapter 1.2 --- Gallium arsenide --- p.4 / Chapter 1.2.1 --- Basic facts --- p.4 / Chapter 1.2.2 --- Band structure --- p.6 / Chapter 1.2.3 --- Production of GaAs --- p.9 / Chapter 1.3 --- Ion implantation --- p.11 / Chapter 1.3.1 --- Principle of ion implantation --- p.11 / Chapter 1.3.2 --- Basic facts --- p.17 / Chapter 1.3.3 --- Radiation damage and annealing --- p.21 / Chapter 1.4 --- Optical measurements --- p.27 / Chapter 1.4.1 --- Basic facts --- p.27 / Chapter 1.4.2 --- Optical reflectance --- p.29 / Chapter 1.4.3 --- Oxide overlayer --- p.39 / Chapter Chapter Two --- Experimental / Chapter 2.1 --- Sample preparation --- p.42 / Chapter 2.2 --- Ion implantation --- p.46 / Chapter 2.2.1 --- Implantation parameters --- p.46 / Chapter 2.2.2 --- Computer modeling of implantation profiles --- p.48 / Chapter 2.3 --- Annealing --- p.57 / Chapter 2.3.1 --- Conventional annealing --- p.57 / Chapter 2.3.2 --- Rapid thermal annealing --- p.61 / Chapter 2.4 --- Optical reflectance measurement --- p.69 / Chapter 2.4.1 --- Principle of measurement --- p.69 / Chapter 2.4.1.1 --- Relative reflectance measurement --- p.71 / Chapter 2.4.1.2 --- Absolute reflectance measurement --- p.79 / Chapter 2.4.2 --- Error estimation and data reduction --- p.82 / Chapter 2.4.2.1 --- Error estimation --- p.84 / Chapter 2.4.2.2 --- Data reduction --- p.86 / Chapter 2.5 --- Optical microscopy and photoluminescence --- p.90 / Chapter Chapter Three --- Results And Discussion / Chapter 3.1 --- Surface morphology --- p.93 / Chapter 3.2 --- Optical reflectance measurement --- p.101 / Chapter 3.2.1 --- Reflectance spectrum --- p.101 / Chapter 3.2.1.1 --- Reference mirror --- p.101 / Chapter 3.2.1.2 --- Crystalline GaAs --- p.104 / Chapter 3.2.1.3 --- Implanted GaAs before annealing --- p.108 / Chapter 3.2.1.4 --- Conventional annealed GaAs --- p.115 / Chapter 3.2.1.5 --- Rapid thermal annealed GaAs (proximity) --- p.120 / Chapter 3.2.2 --- Extraction of optical constants --- p.128 / Chapter 3.2.2.1 --- Oxide overlayer --- p.128 / Chapter 3.2.2.2 --- Dielectric function --- p.132 / Chapter 3.3 --- Photoluminescence results --- p.143 / Chapter Chapter Four --- Conclusions And Suggestions For Further Work --- p.147 / References --- p.149

by Choi Kup Sze. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references. / Acknowledgement / Abstract / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- Introduction --- p.1-1 / Chapter 1.2 --- References --- p.1-6 / Chapter 2. --- Theory of Optical Waveguides --- p.2-1 / Chapter 2.1 --- Theory of Planar Slab Waveguides --- p.2-2 / Chapter 2.2 --- Theory of Channel Dielectric Waveguides --- p.2-13 / Chapter 2.2.1 --- Marcatili's Method --- p.2-13 / Chapter 2.2.2 --- Effective Index Method --- p.2-20 / Chapter 2.3 --- References --- p.2-24 / Chapter 3. --- A Numerical Method for Optical Waveguides --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- two-dimensional Fourier Series Expansion Method --- p.3-2 / Chapter 3.3 --- References --- p.3-13 / Chapter 4. --- Theory of Directional Couplers --- p.4-1 / Chapter 4.1 --- Dual-Channel Coupler --- p.4-1 / Chapter 4.2 --- Multi-channel Directional Coupler --- p.4-8 / Chapter 4.3 --- References --- p.4-9 / Chapter 5. --- Waveguide Formation by Ion Implantation --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Physics of Ion Implantation --- p.5-3 / Chapter 5.3 --- Lattice Damage and Annealing --- p.5-5 / Chapter 5.3.1 --- Lattice Damage --- p.5-5 / Chapter 5.3.2 --- Annealing --- p.5-6 / Chapter 5.4 --- Index Change due to Implantation --- p.5-8 / Chapter 5.5 --- Waveguide Processing Techniques --- p.5-10 / Chapter 5.5.1 --- Photolithography --- p.5-10 / Chapter 5.5.2 --- Processing Techniques --- p.5-11 / Chapter 5.6 --- References --- p.5-13 / Chapter 6. --- Optical Loss in Waveguides --- p.6-1 / Chapter 6.1 --- Loss Mechanisms in Optical Waveguides --- p.6-1 / Chapter 6.2 --- Principle of Propagation Loss Measurement --- p.6-4 / Chapter 6.2.1 --- Cut-back Method --- p.6-5 / Chapter 6.2.2 --- Scattering Light Method --- p.6-7 / Chapter 6.2.3 --- Fabry-Perot Interference Technique --- p.6-9 / Chapter 6.3 --- References --- p.6-16 / Chapter 7. --- Fabrication and Measurement of Optical Waveguides --- p.7-1 / Chapter 7.1 --- Fabrication of Optical Waveguides --- p.7-1 / Chapter 7.1.1 --- Fabrication of waveguides in GaAs by MeV oxygen ion implantation --- p.7-1 / Chapter 7.1.2 --- Waveguide End Facet Preparation --- p.7-4 / Chapter 7.2 --- Measurement of Optical Waveguides --- p.7-7 / Chapter 7.2.1 --- Laser Sources --- p.7-7 / Chapter 7.2.2 --- Guided Wave Excitation --- p.7-10 / Chapter 7.2.3 --- Intensity Profile Measurement --- p.7-17 / Chapter 7.2.4 --- Coupling Coefficient Measurement --- p.7-20 / Chapter 7.2.5 --- Propagation Loss Measurement --- p.7-25 / Chapter 7.3 --- References --- p.7-34 / Chapter 8. --- Results and Discussions --- p.8-1 / Chapter 8.1 --- Near Field Pattern Measurement --- p.8-1 / Chapter 8.2 --- Discussion on the Index Change of the Implanted GaAs --- p.8-5 / Chapter 8.3 --- Propagation Loss Measurement --- p.8-8 / Chapter 8.4 --- Observation of Optical Coupling in Directional Coupler --- p.8-14 / Chapter 8.5 --- References --- p.8-19 / Chapter 9. --- Conclusion --- p.9-1 / Chapter 10. --- Improvement and Extension --- p.10-1 / Appendix 1 Evaluation of the product〈n2 φuvφu'v'〉 --- p.A1-1 / Appendix 2 Transmission of Lossy Fabry-Perot Cavity --- p.A2-1 / Appendix 3 Effective Index versus Index Difference --- p.A3-1 / Appendix 4 Effect of Temperature on the Transmission of a Fabry-Perot Cavity --- p.A4-1 / Appendix 5 Evaluation of An from the Near Field Pattern --- p.A5-1

by Clive Hau Ming Shiu. / On t.p., "x" and "1-x" are subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references (leaves [126]-[130]). / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / TABLE OF CONTENTS --- p.iii / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter Chapter 2 --- THEORY --- p.3 / Chapter 2.1 --- Fundamentals of GaAs and AlGaAs --- p.3 / Chapter 2.1.1 --- Crystal structure and properties of GaAs --- p.4 / Chapter 2.1.2 --- General properties of GaAs at 300K --- p.5 / Chapter 2.1.3 --- Temperature dependence of bandgap for GaAs --- p.6 / Chapter 2.1.4 --- Dopants of GaAs --- p.7 / Chapter 2.1.5 --- Properties of AlGaAs --- p.8 / Chapter 2.2 --- Phase Equilibrium of GaAs and AlGaAs --- p.10 / Chapter 2.2.1 --- Phase diagram of Ga-As binary system --- p.11 / Chapter 2.2.2 --- Phase diagram of Al-Ga-As ternary system --- p.13 / Chapter 2.3 --- Principle of LPE growth --- p.17 / Chapter 2.3.1 --- General concept of liquid phase epitaxy --- p.17 / Chapter 2.3.2 --- Fundamental methods of LPE growth --- p.19 / Chapter 2.4 --- Dopants in GaAs and AlGaAs system --- p.21 / Chapter 2.4.1 --- Common dopants in GaAs --- p.22 / Chapter 2.4.2 --- Tellurium in GaAs --- p.23 / Chapter 2.4.3 --- Silicon in GaAs --- p.24 / Chapter 2.4.4 --- Tellurium and Tin in AlGaAs --- p.26 / Chapter Chapter 3 --- LPE SYSTEM FOR GaAs AND AlGaAs --- p.28 / Chapter 3.1 --- Basic requirements for horizontal sliding LPE system --- p.30 / Chapter 3.2 --- Cleaning process of the LPE system --- p.37 / Chapter 3.2.1 --- Cleaning procedures of the quartz parts --- p.37 / Chapter 3.2.2 --- Cleaning procedures of the stainless steel tubing --- p.38 / Chapter 3.2.3 --- Cleaning procedures of the graphite boat --- p.39 / Chapter 3.3 --- Final examination for LPE growth --- p.41 / Chapter 3.3.1 --- Examining the sealing of the system --- p.41 / Chapter 3.3.2 --- Examining the palladium hydrogen purifier --- p.41 / Chapter 3.3.2.1 --- Measuring the dew point --- p.41 / Chapter 3.3.2.2 --- Measuring the content of oxygen and nitrogen --- p.42 / Chapter 3.3.3 --- Adjusting and measuring the isothermal zone in the fumace --- p.42 / Chapter 3.3.4 --- Measuring of background impurity --- p.43 / Chapter 3.3.5 --- Inspection of the operating chamber --- p.44 / Chapter Chapter 4 --- EXPERIMENTALS --- p.45 / Chapter 4.1 --- Determination of GaAs and AlGaAs content in the source melt --- p.45 / Chapter 4.2 --- Calculation of GaAs and AlGaAs content in the source melt --- p.45 / Chapter 4.3 --- Experimental determination of source melt composition --- p.48 / Chapter 4.4 --- LPE growth method --- p.49 / Chapter 4.5 --- Thickness control of LPE epilayers --- p.49 / Chapter 4.6 --- Experimental procedures --- p.50 / Chapter Chapter 5 --- RESULTS AND DISCUSSIONS --- p.63 / Chapter 5.1 --- Growth condition studies of GaAs --- p.63 / Chapter 5.1.1 --- Experimental --- p.63 / Chapter 5.1.2 --- Phase equilibrium of GaAs in the range of 780 to 840 °C --- p.63 / Chapter 5.1.3 --- Results of undoped GaAs epilayers --- p.67 / Chapter 5.1.4 --- Results of Si doped GaAs epilayers --- p.72 / Chapter 5.2 --- Growth condition studies of AlxGa1-xAs for x=0.1 to 09 --- p.73 / Chapter 5.2.1 --- Phase equilibrium of AlxGa1-xAs for x=0.1 to 09 --- p.73 / Chapter 5.2.2 --- Relation between saturation of solution and he flatness of interface between epilayer and substrate --- p.79 / Chapter 5.2.3 --- Determination of composition x in AlxGa1-xAs --- p.82 / Chapter 5.2.4 --- Relation between epilayer thickness and x in AlxGa1-xAs --- p.84 / Chapter 5.3 --- High AlxGa1-xAs with x ´ 0.9 ° at 780 °C --- p.87 / Chapter 5.3.1 --- Deposition rate of high AlxGa1-xAs epilayer versus cooling rate --- p.87 / Chapter 5.3.2 --- Thickness profiles of epilayers versus cooling rate --- p.89 / Chapter 5.3.3 --- Spectroscopic refractive index of high AlxGa1-xAs in the visible light spectrum --- p.94 / Chapter 5.3.4 --- Rocking curves of high AlxGa1-xAs --- p.96 / Chapter 5.4 --- Tellurium doped AlxGa1-xAs with x ranging from 0.1 to 09 --- p.98 / Chapter 5.4.1 --- Carrier concentration versus composition x in AlxGa1-xAs --- p.98 / Chapter 5.4.2 --- Carrier concentration of Al0.3Ga0.7As versus Te mole fraction --- p.100 / Chapter 5.4.3 --- Donor activation energy of Te Versus x in AlxGa1-xAs --- p.102 / Chapter 5.4.4 --- Refractive index of Te doped AlxGa1-xAs at 300K --- p.105 / Chapter 5.4.5 --- Dependence of solubility upon Te doping level --- p.106 / Chapter 5.5 --- Heavily tellurium doped Al0.3Ga0.7As --- p.107 / Chapter 5.5.1 --- Diffractometry study of heavily Te doped Al0.3Ga0.7As --- p.108 / Chapter 5.5.2 --- Morphological studies and interface studies of heavily Te doped Al0.3Ga0.7As --- p.112 / Chapter Chapter 6 --- CONCLUSION --- p.119 / APPENDIX Photoluminance Analysis at room temperature / REFERENCE

by Ng Po Yin. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 57-59). / by Ng Po Yin. / Acknowledgments --- p.I / Abstract --- p.II / Table of contents --- p.III / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Interest in ZnxCd1-xSe/InP --- p.1 / Chapter 1.2 --- Our work --- p.2 / Chapter 1.3 --- Usefulness of PL --- p.4 / Chapter 1.4 --- Growth conditions of ZnSe/GaAs and ZnxCd1-x/InP --- p.4 / Chapter 1.5 --- Purposes of studying ZnSe/GaAs --- p.5 / Chapter 1.6 --- Inhomogeneity of ZnxCd1-xSe/InP --- p.5 / Chapter Chapter 2 --- Experimental setup and procedures --- p.7 / Chapter 2.1 --- Experimental setup --- p.7 / Chapter 2.2 --- Measurements performed --- p.10 / Chapter 2.3 --- Experimental procedures --- p.10 / Chapter Chapter 3 --- Results and discussion --- p.12 / Chapter 3.1 --- RT and 9K PL of ZnSe/GaAs --- p.12 / Chapter 3.2 --- "Excitation power density dependent, RT and 9K PL of ZnxCd1-xSe/InP" --- p.20 / Chapter 3.3 --- Temperature dependent PL of ZnSe/GaAs and ZnxCd1-xSe/InP --- p.45 / Chapter Chapter 4 --- Conclusions and future work --- p.55 / References --- p.57

Graduation date: 1996

Graduation date: 1994

This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization of these samples using van der Pauw Hall and photoluminescence measurements showed clear trends in carrier mobility and quantum well quality with respect to the structure of the InGaAs region. From this an optimal indium mole fraction and quantum well width were obtained. Subsequent to material characterization, MODFET devices were fabricated and characterized. The measured DC device performance was reasonable and suggests that high quality p-type MODFETS should be obtainable with a properly optimized device structure and fabrication process. / Graduation date: 1993