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A P-well GaAs MESFET technologyCanfield, Philip C. 02 August 1990 (has links)
The semiconductor gallium arsenide (GaAs) has many potential
advantages over the more widely used semiconductor silicon (Si).
These include higher low field mobility, semi-insulating substrates,
a direct band-gap, and greater radiation hardness. All these
advantages offer distinct opportunities for implementation of new
circuit functions or extension of the operating conditions of similar
circuits in silicon based technology. However, full exploitation of
these advantages has not been realized. This study examines the
limitations imposed on conventional GaAs metal-semiconductor field
effect transistor (MESFET) technology by deviations of the semi-insulating
substrate material from ideal behavior. The interaction
of the active device with defects in the semi-insulating GaAs
substrate is examined and the resulting deviations in MESFET
performance from ideal behavior are analyzed.
A p-well MESFET technology is successfully implemented which
acts to shield the active device from defects in the substrate.
Improvements in the operating characteristics include elimination of
drain current transients with long time constants, elimination of the
frequency dependence of g[subscript ds] at low frequencies, and the elimination of
sidegating. These results demonstrate that control of the channel to
substrate junction results in a dramatic improvement in the
functionality of the GaAs MESFET. The p-well MESFET RF
characteristics are examined for different p-well doping levels.
Performance comparable with the conventional GaAs MESFET technology
is demonstrated. Results indicate that optimization of the p-well
MESFET doping levels will result in devices with uniform
characteristics from DC to the highest operating frequency. / Graduation date: 1991
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Analysis and modeling of GaAs MESFET's for linear integrated circuit designLee, Mankoo 31 May 1990 (has links)
A complete Gallium Arsenide Metal Semiconconductor
Field Effect Transistor (GaAs MESFET) model including deep-level
trap effects has been developed, which is far more
accurate than previous equivalent circuit models, for high-speed
applications in linear integrated circuit design.
A new self-backgating GaAs MESFET model, which can
simulate low frequency anomalies, is presented by including
deep-level trap effects which cause transconductance
reduction and the output conductance and the saturation
drain current to increase with the applied signal frequency.
This model has been incorporated into PSPICE and includes a
time dependent I-V curve model, a capacitance model, a
subthreshold current model, an RC network describing the
effective substrate-induced capacitance and resistance, and
a switching resistance providing device symmetry.
An analytical approach is used to derive capacitances
which depend on Vgs and Vds and is one which also includes
the channel/substrate junction modulation by the self
backgating effect. A subthreshold current model is
analytically derived by the mobile charge density from the
parabolic potential distribution in the cut-off region. Sparameter
errors between previous models and measured data
in conventional GaAs MESFET's have been reduced by including
a transit time delay in the transconductances, gm and gds,
by the second order Bessel polynomial approximation. As a
convenient extraction method, a new circuit configuration is
also proposed for extracting simulated S-parameters which
accurately predict measured data. Also, a large-signal GaAs
MESFET model for performing nonlinear microwave circuit
simulations is described.
As a linear IC design vehicle for demonstrating the
utility of the model, a 3-stage GaAs operational amplifier
has been designed and also has been fabricated with results
of a 35 dB open-loop gain at high frequencies and a 4 GHz
gain bandwidth product by a conventional half micron MESFET
technology. Using this new model, the low frequency
anomalies of the GaAs amplifier such as a gain roll-off, a
phase notch, and an output current lag are more accurately
predicted than with any other previous model.
This new self-backgating GaAs MESFET model, which
provides accurate voltage dependent capacitances, frequency
dependent output conductance, and transit time delay
dependent transconductances, can be used to simulate low
frequency effects in GaAs linear integrated circuit design. / Graduation date: 1991
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Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design /Huber, Alex, January 2000 (has links)
Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 13547. / Summary in German and English. Includes bibliographical references.
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Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient methodTsia, Man, Juliana. January 2000 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2001. / Includes bibliographical references.
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GaAs-based long-wavelength quantum dot lasers /Park, Gyoungwon, January 2001 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references (leaves 89-95). Available also in a digital version from Dissertation Abstracts.
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Theoretical study of GaAs-based quantum dot lasers and microcavity light emitting diodesHuang, Hua 28 August 2008 (has links)
Not available / text
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Study of GaAs as a possible field assisted positron moderator沈躍躍, Shan, Yueyue. January 1994 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method謝敏, Tsia, Man, Juliana. January 2000 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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A study of GaAs and CdZnTe by positron annihilation spectroscopyShan, Yueyue., 沈躍躍. January 1997 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
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The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions /Rochemont, Pierre de January 1986 (has links)
No description available.
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