Die vorliegende Arbeit ist ein Beitrag zur Theorie des spinabhängigen Transports in magnetischen Vielfachschichten. Es wird erstmalig eine parameterfreie Beschreibung des Giant Magnetoresistance (GMR) vorgelegt, welche detaillierte Einsichten in die mikroskopischen Vorgänge gestattet. Die ab-initio Berechnung der Elektronenstruktur der magnetischen Vielfachschichten basiert auf der Spindichtefunktionaltheorie unter Verwendung eines Screened Korringa-Kohn-Rostoker-Verfahrens. Die Streueigenschaften von Punktdefekten werden über die Greensche Funktion des gestörten Systems selbstkonsistent bestimmt. Die Transporteigenschaften werden durch Lösung der quasiklassischen Boltzmann-Gleichung unter Berücksichtigung der Elektronenstruktur der Vielfachschicht und der Anisotropie der Streuung an Fremdatomen berechnet. Die Boltzmann-Gleichung wird iterativ unter Einbeziehung der Vertex-Korrekturen gelöst. Der Formalismus wird auf Co/Cu- und Fe/Cr-Vielfachschichten, die Standardsysteme der Magnetoelektronik, angewandt. Es werden die Abhängigkeit der Streuquerschnitte, der spezifischen Restwiderstände und des GMR von der Art und der Lage der Übergangsmetalldefekte in Co/Cu- und Fe/Cr-Vielfachschichten diskutiert. Darüber hinaus wird der Einfluß des Quantum Confinements auf den GMR eingehend untersucht. Vorteile und Grenzen der vorliegenden theoretischen Beschreibung werden aufgezeigt. / A new theoretical concept to study the microscopic origin of Giant Magnetoresistance (GMR) from first principles is presented. The method is based on ab-initio electronic structure calculations within the spin density functional theory using a Screened Korringa-Kohn-Rostoker method. Scattering at impurity atoms in the multilayers is described by means of a Green's-function method. The scattering potentials are calculated self-consistently. The transport properties are treated quasi-classically solving the Boltzmann equation including the electronic structure of the layered system and the anisotropic scattering. The solution of the Boltzmann equation is performed iteratively taking into account both scattering out and scattering in terms (vertex corrections). The method is applied to Co/Cu and Fe/Cr multilayers. Trends of scattering cross sections, residual resistivities and GMR ratios are discussed for various transition metal impurities at different positions in the Co/Cu or Fe/Cr multilayers. Furthermore the relation between spin dependence of the electronic structure and GMR as well as the role of quantum confinement effects for GMR are investigated. Advantages and limits of the approach are discussed in detail.

Au cours de ces travaux de thèse, nous avons étudié par microscopie magnétique à émission d’électrons balistiques (BEMM) les propriétés de magnétotransport d’électrons chauds de la vanne de spin Fe/Au/Fe épitaxiée sur GaAs(001). Dans ces expériences, la pointe d’un microscope à effet tunnel (STM) injecte localement un courant d’électrons chauds à la surface de la vanne de spin. La mesure sous champ magnétique du courant d’électrons balistiques collecté à l’arrière de l’échantillon donne accès aux propriétés locales de magnétoconductance de l’échantillon. Nous avons dans un premier temps étudié les propriétés de magnétotransport de vannes de spin planaires. Les mesures BEMM démontrent un magnétocourant d’électrons chauds pouvant atteindre 500 % à température ambiante. Ces forts effets de magnétoconductance ne sont que très faiblement dépendants des épaisseurs des électrodes de fer et ne peuvent donc être dus à l’asymétrie en spin de la longueur d’atténuation des électrons chauds dans les couches de fer. Dans cette structure épitaxiée, la polarisation en spin du faisceau d’électrons chauds s’acquiert principalement aux interfaces via des effets de structure électronique. L’électron traversant les couches minces métalliques se propage comme un état de Bloch. Sa transmission aux différentes interfaces se fait en conservant d’une part la composante transverse k║ du vecteur d’onde électronique, et d’autre part, la symétrie de la fonction d’onde. Au-dessus de la barrière Schottky, les électrons chauds sont collectés dans la vallée Г du GaAs se projetant à l’interface dans la direction k║=0. Dans cette direction k║=0, la conservation de la symétrie de la fonction d’onde à l’interface Fe/Au conduit au filtrage des états de Bloch de symétrie Δ1 du fer. Ces états de symétrie Δ1, totalement polarisés en spin, sont responsables des forts magnétocourants d’électrons chauds observés. Cette analyse est confirmée expérimentalement par l’observation d’une corrélation entre amplitude du magnétocourant et masse effective du substrat semiconducteur. En augmentant la masse effective du semiconducteur, on ouvre le collimateur filtrant le courant d’électrons chauds autour de la direction k║=0, et le magnétocourant diminue sans modifier la vanne de spin. Dans un second temps, tirant partie de la résolution latérale du microscope et de sa sensibilité au magnétisme, des microstructures de fer préparées sous ultra-vide par évaporation à travers un masque (méthode du nanostencil) ont été étudiées. Dans ces structures, la modulation du courant collecté par la structure locale en domaines magnétiques a permis la réalisation d’images magnétiques avec une haute résolution spatiale. Les contrastes observés sur ces microstructures sont en excellent accord avec les images BEMM calculées à partir de simulations micromagnétiques ouvrant la voie à une microscopie magnétique quantitative à forte sensibilité et résolution latérale nanométrique. / During this thesis work, we studied by ballistic electron magnetic microscopy (BEMM) the hot electron magnetotransport properties of epitaxial Fe/Au/Fe/GaAs(001) heterostructures. In these experiments, hot electrons are injected from an STM tip through the metallic base. The measurement of the ballistic electron current collected at the back of the substrate under magnetic field gives access to the local magnetoconductance properties of the sample. The first part of this work consists in the study of a planar heterostructures. BEMM measurements on epitaxial Fe/Au/Fe/GaAs(001) samples demonstrate hot electron magnetocurrent as high as 500% at room temperature. This high magnetocurrent value is observed to be almost independent of the Fe layers thickness, and thus can not be explained by the spin asymmetry of the electron attenuation length in the iron layers. In this epitaxial heterostructure, the hot electron beam is mainly spin-polarized at the interfaces due to band structure effects. In the metallic thin films, electrons propagate as Bloch states. The electron wave function transmission at the interfaces should satisfy two selection rules: the transverse momentum (k║) of the electron wave vector and the symmetry of the electron wave function should be conserved. Above the Schottky barrier height, hot-electrons are collected in the Г valley of GaAs selecting thus only electrons with a transverse momentum (k║) close to zero. Among these k|| ≈ 0 states, conservation of the electron wave-function symmetry at the Fe/Au epitaxial interfaces additionally selects electrons with the Δ1 symmetry. These Δ1 states are fully spin-polarized and are responsible for the observed high magnetocurrent in these heterostructures. This analysis is experimentally confirmed by the observation of a correlation between the magnetocurrent value and the semiconductor effective mass. By increasing the semiconductor effective mass, we open the collimator which filters the electronic states around k║=0 and the magnetocurrent value decreases. To take advantage of the lateral resolution of the microscope and of its high sensitivity to magnetism, the second part of this work was devoted to the study of sub-micrometric iron structures prepared under UHV by evaporation through a nanostencil. In these structures, the modulation of the collected current by the local magnetic domain structure in the Fe dots allows magnetic imaging with a high spatial resolution. The experimental magnetocontrasts observed on these sub-micrometric Fe dots are in excellent agreement with BEMM current maps calculated from micromagnetic simulation results. This opens the way to a quantitative magnetic microscopy with high contrast and nanometric lateral resolution.

The aim of this thesis is to perform Magnetic Resonance Imaging at very low field (from 1 mT to 10 mT). A new kind of sensor called "mixed sensor" has been used to achieve a good detectivity at low frequencies. Combining a superconducting loop and a giant magnetoresistance, those detectors have a competitive equivalent field noise compared to existing devices (Tuned coils, SQUIDs and Atomic Magnetometers). They have been combined with flux transformers to increase the coupling between the sample and the sensor. A complete study has been performed to adapt it to mixed sensors and then maximize the gain. This set has been incorporated in an existing small MRI device to test its robustness in real conditions. In parallel, several MRI sequences (GE, SE, FLASH, EPI, ...) have been integrated and adapted to very low field requirements. They have been used to perform in-vivo three dimensional imaging and relaxometry studies on well known products to test their reliability. Finally, a larger setup adapted for full-head imaging has been designed and built to perform images on a larger working volume.

[pt] Amperímetros convencionais devem ser inseridos em série com o elemento no qual se deseja medir a corrente, constituindo uma forma de medição invasiva. Amperímetros alicate, baseados em bobinas, realizam medições de forma não invasiva, mas são limitados a correntes alternadas. Para medição de correntes contínuas, amperímetros baseados no efeito Hall são utilizados, mas possuem baixo nível de tensões de saída e pouca estabilidade em relação à temperatura. O objetivo desta dissertação foi desenvolver um protótipo de amperímetro baseado em magnetômetros de magnetorresistência gigante (GMR) capaz de medir correntes contínuas, de forma não invasiva e com alta resolução em relação aos amperímetros alicate. A metodologia dividiu-se em: (i) utilização de dois magnetômetros GMR para medir o campo magnético gerado pela corrente elétrica em um condutor; (ii) projeto e implementação de um solenoide para polarizar os sensores na faixa de operação linear; (iii) aprimoramento e desenvolvimento de circuitos eletrônicos dedicados à excitação e leitura dos GMRs; (iv) implementação de algoritmos para solução do problema inverso, isto é, a partir da saída do circuito, em mV, estimar a corrente que passa pelo condutor e a distância entre este e o amperímetro. Foram realizados 60 testes, com correntes variando de -3 A a 3 A, com passos de 0,1 A. O protótipo foi capaz de estimar a corrente elétrica com incerteza expandida, do tipo A, de 0,091 A e 0,07 cm para a distância. Os resultados comprovam a viabilidade da realização de medições de corrente, por aproximação, utilizando sensores GMR. / [en] Conventional ammeters should be inserted in series with the element in which the current is to be measured, thus constituting an invasive measurement form. Clamp ammeters, based on coils, are able to measure non-invasively but are limited to alternating currents. For measurement of direct currents, Hall-based ammeters are used, but have low output voltages and little temperature stability. Thus, the objective of this dissertation was to develop a prototype based on giant magnetoresistance (GMR) magnetometers capable of measuring direct currents, non-invasively and with high resolution in relation to clamp ammeters. The methodology was divided into: (i) the use of two GMR magnetometers to measure the magnetic field generated by the electric current in a conductor; (ii) design and implementation of a solenoid to polarize the sensors in the linear operating range; (iii) improvement and development of electronic circuits dedicated to the excitation and reading the GMRs; (iv) implementation of algorithms to solve the inverse problem, that is, from the outputs of the circuit, in mV, estimate the current passing through the conductor and the distance between it and the ammeter. Sixty tests were performed, with currents varying from -3 A to 3 A, with steps of 0.1 A. The prototype was able to estimate the electrical current with type A expanded uncertainty of 0.091 A and 0.07 cm for the distance. The results demonstrate the feasibility of conducting current measurements by approximation using GMR sensors.

L’enjeu principal de cette thèse a été de démontrer la faisabilité de l’Imagerie par Résonance Magnétique à très bas champ (entre 1 mT et 10 mT). Pour ce faire, un nouveau type de capteur, appelé “capteur mixte”, a été utilisé. Ce détecteur est le résultat de l’association d’une magnétorésistance géante avec une boucle supraconductrice. Il génère un bruit en champ comparable aux détecteurs les plus utilisés dans cette gamme de fréquence (Bobine accordées, SQUIDs, Magnétomètres atomique optique). Le couplage entre l’échantillon observé et le capteur mixte a été grandement amélioré à travers l’utilisation d’un transformateur de flux. Cet intermédiaire a été conçu et optimisé pour maximiser la sensibilité en champ du “capteur mixte”. Cet ensemble a ensuite été introduit dans un IRM à très bas champ magnétique pour tester son efficacité in-situ. Parallèlement, différentes séquences d’IRM (GE, SE, FLASH, EPI,...) ont été développées spécifiquement pour le très bas champ. Elles ont été utilisées pour réaliser de l’imagerie tridimensionnelle in-vivo ainsi que des études relaxométriques sur divers produits. Enfin, un système d’IRM “tête entière” a été construit pour permettre l’acquisition d’images à très bas champ magnétique sur un large volume. / The aim of this thesis is to perform Magnetic Resonance Imaging at very low field (from 1 mT to 10 mT). A new kind of sensor called “mixed sensor” has been used to achieve a good detectivity at low frequencies. Combining a superconducting loop and a giant magnetoresistance, those detectors have a competitive equivalent field noise compared to existing devices (Tuned coils, SQUIDs and Atomic Magnetometers). They have been combined with flux transformers to increase the coupling between the sample and the sensor. A complete study has been performed to adapt it to mixed sensors and then maximize the gain. This set has been incorporated in an existing small MRI device to test its robustness in real conditions. In parallel, several MRI sequences (GE, SE, FLASH, EPI, ...) have been integrated and adapted to very low field requirements. They have been used to perform in-vivo three dimensional imaging and relaxometry studies on well known products to test their reliability. Finally, a larger setup adapted for full-head imaging has been designed and built to perform images on a larger working volume.

The properties of RNiSb compounds were studied from various points of view: Magnetism, transport, electronic structure. The compounds with a light rare earth are metallic, while the cubic phases with a heavy rare earth element have the semi-Heusler structure and are narrow gap semiconductors. A giant magnetoresistance effect was found at low temperatures, the larger as the density of charge carriers is weak. It was explained by the polarisation of the impurity levels situated within the band gap of the semiconductor under the field of the magnetic moment of the 4f shell. The crystal field, as well as the magnetic order at low temperatures, were studied by neutron scattering and diffraction. Particular magnetic properties (absence of magnetic order in the Pr compound, antiferromagnetic structure in the second group, orientation of the moments) have been explained, at least qualitatively. CeNiSb is a Kondo-type compound with a Kondo temperature of about 8 K. Photoemission measurements have allowed to analyse the electronic structure in the valence band of these compounds, in agreement with band structure calculations. By resonant photoemission of TbNiSb and GdCu, different resonance channels have been resolved, which depend on the spin configuration of the excited states.

No description available.

For many decades there has been a need in many industries to measure speed and position of ferrous gears. This is commonly done by converting passing gear teeth from trigger wheels to electrical impulses to calculate speed and angular position. By using Hall effect sensors or Giant Magnetoresistance sensors (GMR), a zero speed detection of gear teeth is possible while at the same time be cheap to produce and durable for harsh environments. A specially designed trigger-wheel (cogwheel created for measurements) with gear teeth in a specific pattern, exact position can be detected by using a dual sensor, even when no earlier information is available. The new design of trigger-wheel also makes this new method more accurate and universal compared to previous solutions. This thesis demonstrates and argues for the advantages of using a dual sensor for speed and angular position detection on gear wheels. Were one sensor do quantitative measurements for pattern detection in the teeth arrangements and the other sensor do qualitative measurements for position detection.

Smart cards are widely used in different areas of modern life including identification, banking, and transportation cards. Some types of cards are able to store data and process information as well. A number of them can run cryptographic algorithms to enhance the security of their transactions and it is usually believed that the information and values stored in them are completely safe. However, this is generally not the case due to the threat of the side channel. Side channel analysis is the process of obtaining additional information from the internal activity of a physical device beyond that allowed by its specifications. There exist different techniques to attempt to obtain information from a cryptosystem using other ways than the normally permitted. This thesis presents a series of experiments intended to study the side channel from a particular type of smart card, known as Java Cards. This investigation uses the well known technique, Correlation Analysis, and a new type of side channel attack called fast correlation in the frequency domain to study the side channel of Java Cards. This research presents a giant magnetoresistor (GMR) probe and for the first time, this type of sensor is used to investigate the side channel. A novel setup designed for studying the side channel of smart cards is described and two metrics used to evaluate the analysis results are presented. After testing the GMR probe and methodology on electronic devices executing the Advanced Encryption Standard (AES), such as 8 bit microcontrollers and 128 bit AES implementations on FPGAs, these techniques were applied to analyse two different models of Java Cards working in the contactless mode. The results show that successful attacks on a software implementation of AES running on both models of Java Cards are possible.

Two of the principal phenomena observed and exploited in the field of spintronics are giant magnetoresistance (GMR) and spin transfer torque (STT). With GMR, the resistance of a magnetic multilayer is affected by the relative orientation of its magnetic layers due to (electron) spin dependent scattering. For the STT effect, a spin-polarized electric current is used to alter the magnetic state of a ferromagnet. Together, GMR and STT are at the foundation of numerous technologies, and they hold promise for many more applications. To achieve the high current densities (~10¹² A/m²) that are necessary to observe STT effects, point contacts – constricted electrical pathways (~1–100 nm in diameter) between conducting materials – are often used because of their small cross-sectional areas. In this sense, we have explored STT in bilayer magnetic nanopillars, where an electric current was used to induce precession of a ferromagnetic layer. This precessional state was detected as an increase in resistance of the device, akin to GMR. Temperature dependent measurements of the onset of precession shed light on the activation mechanism, but raised further questions about its detailed theory. Point contacts can also be used as local sources or detectors of electrons. In this context, we have observed transverse electron focusing (TEF) in a single crystal of bismuth. TEF is a k-selective technique for studying electron scattering from within materials. Using lithographically fabricated point contacts, we have studied the temperature dependence of the relaxation time for ballistic electrons from 4.2 to 100 K. These measurements indicated a transition between electron-electron dominated scattering at low temperatures and electron-phonon scattering as the Debye temperature was approached. We present preliminary work toward a TEF experiment to measure spin dependent scattering from a non-magnet/magnet interface. We also investigated spin wave propagation in thin, magnetic waveguide structures. At the boundary between the waveguide and continuous magnetic film, spin wave rays were found to radiate into the film, or to reflect and form standing waves in the waveguide. A circular defect in the waveguide was observed to cause diffraction of spin waves, generating an interference pattern of higher modes of oscillation. / text