Abstract In this work the LCVD of copper and nickel from the precursor gases Cu(hfac)tmvs and Ni(CO)4 has been investigated. The in-house constructed LCVD system and processes and the practical utilisation of these in prototype integrated circuit edit work are described. The investigated process parameters include laser power, laser scan speed, precursor partial pressure and the effect of H2 and He carrier gases. The deposited metal conductor lines have been examined by LIMA, AFM, FIB secondary electron/ion micrography, and by electrical measurements. Furthermore, the study of experimental FIB circuit edit processes is carried out and discussed with particular emphasis on ion beam induced ESD damages. It is shown how the LCVD and FIB methods can be combined to create a novel method to carry out successfully circuit edit cases where both methods alone will fail. The combined FIB/LCVD- method is shown to be highly complementary and effective in practical circuit edit work in terms of reduced process time and improved yield. Circuit edit cases where both technologies are successfully used in a complementary way are presented. Selected examples of some special circuit edit cases include RF- circuit editing, a high resolution method for FIB-deposited tungsten conductor line resistance reduction and large area EMI shielding of IC surfaces. Based on the research it was possible for a formal workflow for the combined process to be developed and this approach was applied to 132 circuit edit cases with 85% yield. The combined method was applied to 30% of the total number of edit cases. Finally, the developed process and constructed system was commercialized.

Re(hfac)₃ has been found to crystallize in a hexagonal unit cell but the detailed structure has not been completed because of disordering problems along the c axis. The two-dimensional structure of Re(hfac)₃ reveals C₃ symmetry and no distortion of the octahedron composed of the six Re-O bonds. Re(acac)₃ has been found to belong to the α-type isomorphous set designated by Astbury. From x-ray powder photographs, the structure of Re(acac)₃ has been demonstrated to have the same gross structural features as Mn(acac)₃ but is not necessarily isostructural. Arguments are presented to show that β-V(acac)₃ is representative of the β-modification and that the β-type isomorphous set crystallizes in a monoclinic unit cell with a β-angle of 90º. Rotational transitions between the three isomorphous sets have been examined and found to be energetically unfavourable. / Thesis / Master of Science (MSc)

No description available.

<p>Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO₂ and single crystalline α-Al₂O₃ by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates.</p><p>Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water.</p><p>For growth of copper(I) nitride from Cu(hfac)₂ and ammonia no film growth occurred without adding water to the growth process. The Cu₃N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H₂ the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NH_x groups was often found to play an important role, according to both theoretical calculations and experimental results.</p>

Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. In this thesis growth of copper, copper(I) oxide and copper(I) nitride on two different substrates, amorphous SiO2 and single crystalline α-Al2O3 by the so called Atomic Layer Deposition (ALD) techniques has been studied. This technique allows precise control of the growth process at monolayer level on solid substrates. Other characteristic features of ALD are that it produces films with excellent step coverage and good uniformity even as extremely thin films on complicated shaped substrates. Alternative deposition schemes were developed for the materials of interest. It was demonstrated that use of intermediate water pulses affected the deposition pathways considerably. By adding water, the films are thought to grow via formation of an oxide over-layer instead of through a direct reaction between the precursors as in the case without water. For growth of copper(I) nitride from Cu(hfac)2 and ammonia no film growth occurred without adding water to the growth process. The Cu3N films could be transformed into conducting copper films by post annealing. In copper growth from CuCl and H2 the water affected film growth on the alumina substrates considerably more than on the fused silica substrates. The existence of surface -OH and/or -NHx groups was often found to play an important role, according to both theoretical calculations and experimental results.

No description available.