Graphene field effect transistors (GFETs) are considered as a candidate for future high-frequency applications. For their realization, the optimal combination of substrate, graphene preparation, and insulator deposition and composition is required.This optimization must be based on an in-depth characterization of the obtained graphene insulator metal (GIM) stack. Hall effect measurements are frequently employed to study such systems, thereby focussing primarily on the charge carrier mobility. In this work we show how an analysis of the sheet Hall coefficient can reveal further important properties of the GIM stack, like, e.g., the interface trap density and the spacial charge inhomogeneity. To that end, we provide an extensive description of the GIM diode, which leads to an accurate calculation of the sheet Hall coefficient dependent on temperature and gate voltage. The gate dependent inverse sheet Hall coefficient is discussed in detail before we introduce the concept of an equivalent temperature, which is a measure of the spacial charge inhomogeneity. In order to test the concept, we apply it to evaluate already measured Hall data taken from the literature. This evaluation allows us to determine the Drude mobility, even at the charge neutrality point, which is inaccessible with a simple one band Hall mobility analysis, and to shed light on the spacial charge inhomogeneity. The formalism is easily adaptable and provides experimentalists a powerful tool for the characterization of their graphene field effect devices.

No description available.

It is generally believed that one of the key parameterscontrolling the normal state and superconducting properties ofhigh temperature superconductors is the charge carrierconcentrationpin the CuO2planes.By changing the non-isovalent dopingconcentration on the RE site as well as the oxygen content in(RE)Ba2Cu3O7−δ, an excellent tool is obtained tovary the hole concentration over a wide range from theunderdoped up to the overdoped regime.In the present thesis thefocus is on the doping effects on the structural and normalstate electrical properties in Nd-123 doped with Ca, La, Pr,Ca-Pr, and Ca-Th.T he effects of doping have been investigatedby X-ray and neutron powder diffraction, and by measurements ofthe resistivity, thermoelectric powerS, and Hall coefficient RH.T he thermoelectric power is a powerful tool forstudies of high temperature superconductivity and is highlysensitive to details of the electronic band structure.Sas a function of temperature has been analyzed in twodifferent two band models.The parameters of these models arerelated to charactristic features of the electron bands and asemiempirical physical description of the doping dependence ofSis obtained.So me important results are following: (i)The valence of Pr in the RE-123 family.Results from thestructural investigations, the critical temperature Tc, and thethermoelectric power indicated a valence +4 at low dopingconcentration, which is in agreement with results of chargeneutral doping in the RE-123 family.(ii)Hole localization. The results of bond valence sum (BVS)calculations from neutron diffraction data showed that holelocalization on the Pr+4site was the main reason for the decrease of thehole concentration p.Differ ent types of localization wereinferred by S measurements for Ca-Th and Ca-Pr dopings.(iii)Competition between added charge and disorder. Theresults of RH measurements indicated that Ca doping introduceddisorder in the CuO2planes in addition to added charge.This could bethe main reason for the observed small decrease of thebandwidth of the density of states in the description of aphenomenological narrow band model.(iv) Empirical parabolic relation between γ and p.S data were analyzed and well described by a two-band modelwith an additional linear T term, γT.An empiricalparabolic relation for γ as a function of holeconcentration has been found. <b>Key words:</b>high temperature superconductors, criticaltemperature, resistivity, thermoelectric power, Hallcoefficient, X-ray diffraction, Neutron diffraction, NdBa2Cu3O7−δ, hole concentration,substitution.

<p>It is generally believed that one of the key parameterscontrolling the normal state and superconducting properties ofhigh temperature superconductors is the charge carrierconcentration<i>p</i>in the CuO₂planes.By changing the non-isovalent dopingconcentration on the RE site as well as the oxygen content in(RE)Ba₂Cu₃O_7−δ, an excellent tool is obtained tovary the hole concentration over a wide range from theunderdoped up to the overdoped regime.In the present thesis thefocus is on the doping effects on the structural and normalstate electrical properties in Nd-123 doped with Ca, La, Pr,Ca-Pr, and Ca-Th.T he effects of doping have been investigatedby X-ray and neutron powder diffraction, and by measurements ofthe resistivity, thermoelectric power<i>S</i>, and Hall coefficient R_H.T he thermoelectric power is a powerful tool forstudies of high temperature superconductivity and is highlysensitive to details of the electronic band structure.<i>S</i>as a function of temperature has been analyzed in twodifferent two band models.The parameters of these models arerelated to charactristic features of the electron bands and asemiempirical physical description of the doping dependence of<i>S</i>is obtained.So me important results are following:</p><p>(i)<i>The valence of Pr in the RE-123 family.</i>Results from thestructural investigations, the critical temperature Tc, and thethermoelectric power indicated a valence +4 at low dopingconcentration, which is in agreement with results of chargeneutral doping in the RE-123 family.(ii)<i>Hole localization</i>. The results of bond valence sum (BVS)calculations from neutron diffraction data showed that holelocalization on the Pr⁺⁴site was the main reason for the decrease of thehole concentration p.Differ ent types of localization wereinferred by S measurements for Ca-Th and Ca-Pr dopings.(iii)<i>Competition between added charge and disorder</i>. Theresults of RH measurements indicated that Ca doping introduceddisorder in the CuO₂planes in addition to added charge.This could bethe main reason for the observed small decrease of thebandwidth of the density of states in the description of aphenomenological narrow band model.(iv) Empirical parabolic relation between γ and p.S data were analyzed and well described by a two-band modelwith an additional linear T term, γT.An empiricalparabolic relation for γ as a function of holeconcentration has been found.</p><p><b>Key words:</b>high temperature superconductors, criticaltemperature, resistivity, thermoelectric power, Hallcoefficient, X-ray diffraction, Neutron diffraction, NdBa₂Cu₃O_7−δ, hole concentration,substitution.</p>

Als Graphen bezeichnet man eine einzelne freistehende Lage des Schichtkristalls Graphit. Im Gegensatz zur mechanischen Isolation von Graphit bietet die Züchtung auf Siliziumkarbid eine Methode zur großflächigen Herstellung von Graphen. Aufgrund der besonderen physikalischen Eigenschaften werden für Graphen viele verschieden Einsatzmöglichkeiten in diversen Bereichen prognostiziert. Mit seiner hohen Ladungsträgerbeweglichkeit ist Graphen besonders als Kanalmaterial für Feldeffekttransistoren (FET) interessant. Allerdings muss hierfür unter anderem ein geeignetes FET-Isolatormaterial gefunden werden. In dieser Arbeit wird eine detaillierte, theoretische Beschreibung der Graphen-FETs vorgestellt, die es erlaubt die steuerspannungsabhängige Hall-Konstante zu berechnen. Mit der dadurch möglichen Analyse können wichtige Kenngrößen, wie z. B. die Grenzflächenzustandsdichte des Materialsystems bestimmt werden. Außerdem wurden zwei Methoden zur Isolatorabscheidung auf Graphen untersucht. Siliziumnitrid, welches mittels plasmaangeregter Gasphasenabscheidung aufgetragen wurde, zeichnet sich durch seine n-dotierende Eigenschaft aus. Damit ist es vor allem für quasi-freistehendes Graphen auf Siliziumkarbid interessant. Bei der zweiten Methode handelt es sich um einen atomaren Schichtabscheidungsprozess, der ohne eine Saatschicht auskommt. An beiden Graphen- Isolator-Kombinationen wurde die neue Charakterisierung mittels der Hall-Datenanalyse angewandt.

No description available.

Als Graphen bezeichnet man eine einzelne freistehende Lage des Schichtkristalls Graphit. Im Gegensatz zur mechanischen Isolation von Graphit bietet die Züchtung auf Siliziumkarbid eine Methode zur großflächigen Herstellung von Graphen. Aufgrund der besonderen physikalischen Eigenschaften werden für Graphen viele verschieden Einsatzmöglichkeiten in diversen Bereichen prognostiziert. Mit seiner hohen Ladungsträgerbeweglichkeit ist Graphen besonders als Kanalmaterial für Feldeffekttransistoren (FET) interessant. Allerdings muss hierfür unter anderem ein geeignetes FET-Isolatormaterial gefunden werden. In dieser Arbeit wird eine detaillierte, theoretische Beschreibung der Graphen-FETs vorgestellt, die es erlaubt die steuerspannungsabhängige Hall-Konstante zu berechnen. Mit der dadurch möglichen Analyse können wichtige Kenngrößen, wie z. B. die Grenzflächenzustandsdichte des Materialsystems bestimmt werden. Außerdem wurden zwei Methoden zur Isolatorabscheidung auf Graphen untersucht. Siliziumnitrid, welches mittels plasmaangeregter Gasphasenabscheidung aufgetragen wurde, zeichnet sich durch seine n-dotierende Eigenschaft aus. Damit ist es vor allem für quasi-freistehendes Graphen auf Siliziumkarbid interessant. Bei der zweiten Methode handelt es sich um einen atomaren Schichtabscheidungsprozess, der ohne eine Saatschicht auskommt. An beiden Graphen- Isolator-Kombinationen wurde die neue Charakterisierung mittels der Hall-Datenanalyse angewandt.:1 Einleitung 2 Graphen 3 Methoden 4 Die Hall-Konstante von Graphen 5 Siliziumnitrid als Dielektrikum für Graphentransistoren 6 Aluminiumoxid auf epitaktischem Graphen 7 Zusammenfassung A Anhang