Introduction A new high current (up to 50 kW) solid target irradiation system is being built. While retaining the same beam power capability of the previous target generation, the system is a totally new design with many improvements, simplified constriction, more reliable operation and a novel approach to target handling, beam collimation and beam diagnostic. Unlike the previous, three-part soldered target, the new target is fabricated from a single piece of metal. Material and Methods The target (or rather the target-material holder) is a single metal plate (usually copper or silver) incorporating the seals and the cooling channels (FIG. 1). The target is placed in the beam at 7°. Depending on target material and coolant flow the target can handle beam powers up to 50 kW (FIG. 2). Target transfer (utilizing a special shuttle) is pneumatic. Part of the transfer pipe is shown above the target station. Except the target o-rings (a part of each target) there are no elastomer seals in the system; all is of soldered/welded construction and metal seals. Sectional view (FIG. 3.) shows that target in place in the chamber. The target and the chamber are electrically insulated from the rest of the system, thus forming a Faraday cup for accurate current measurement. The collimator is formed of a two part silver casting. It is designed to handle up to 10 kW of beam power. Four-sector silver mask in front of the collimator allows precise beam cantering. The collimator parts were cast using 3D printed wax patterns. This allowed to create a complex pattern of cooling channels that are difficult to produce by machining (FIG. 4.) All the actions of target shuttle landing and the target placing are performed by three air cylinders. All three are fitted with Vespel SP22 (Du Pond) seals. Unlike previous systems that used mechanical grabbers to manipulate the target, low vacuum is employed to hold the target during removal from the shuttle and placing in the irradiation chamber. This greatly simplifies the operation and is more reliable. The pneumatic transfer system is using two vacuum producer to transfer the target shuttle between the target station and the hotcell. Both landing terminals in the target station and hotcell, as well as the transfer line itself, are under negative pressure preventing any spread of contamination. The hotcell landing terminal incorporates a fully automatic target-material dissolution system. After landing, the target is removed from the shuttle and the active face pressed against a reaction vessel where the dissolution takes place (FIG. 5.) All the functions of target transfer, placing and manipulations are controlled by a simple PLC (FMD88-10 PLC, Triangle Research) Results and Conclusion While intended mostly for cladding with metallic target materials, a special version of the target was designed to handle salts or oxides that can be fused and retained in grooves on the target face (FIG. 6.) Despite the poor thermal conduc-tivity of most of those materials, this target can handle high beam currents. FIGURE 7 shows a thermal modelling of the cen-tral 10×25 mm segment of the target (highest heat flux region under a Gaussian beam). Copper target with rubidium chloride fused in 0.8 mm wide and 1.7 mm deep grooves and spaced by 0.5 mm (60% coverage). Beam of 70 MeV energy and 400 μA intensity is collimated 20 % (320 μA on target). Cooling-water flow is set to 25 l/min. Cladding the target face with a thin metallic layer can help containing the target material. This process is currently under development. Most aspects of the system operation and con-striction were successfully used in the previous “generations” of targets in the last 30 years. The new system will provide improved performance with a simpler and more reliable design, lower maintenance and lower consumables cost. FIGURE 8 shows the “4th generation” system and target (2005). Dozens variants of this design are in use all over the world.

The low-voltage dc-dc converter (LDC) in electrical vehicles (EVs) is to convert high dc voltage (270V~430V) from traction battery to low dc voltage (12.5V~15.5V) for the vehicle auxiliary systems. Galvanic isolation is required in the LDC due to safety considerations. Three challenges exist in the LDC design: (1) wide regulation range; (2) high output current; (3) thermal management. The single stage solutions, such as phase-shift full-bridge converter and LLC resonant converter, have been widely studied in the past. A matrix transformer is widely adopted in single-stage LDC design to deal with the large current. At last, the low-profile design allows large footprint area for high power density and ease of cooling design. However, the trade-off between wide regulation range and efficiency exists in single-stage LDC design. Recently, a two-stage solution is proposed to achieve high efficiency and wide regulation range at the same time. The fixed turn ratio LLC stage serves as a dc transformer (DCX) to meet the galvanic isolation requirements and PWM dc-dc stage regulates the output voltages. In this thesis, a variable ratio matrix transformer-based LLC converter is proposed for two-stage LDC efficiency improvement. The transformer secondary copper losses are reduced by taking advantage of the adaptive number of element transformers. In addition, the PWM dc-dc stage achieves better efficiency with variable intermediate bus voltage. The operation principle and design considerations are studied in this thesis. The proposed 1600W two-stage LDC prototype achieves 96.82% full load efficiency under 400V input condition which is 1.2% efficiency higher than the fixed ratio LLC based two-stage design. Last but not least, the prototype shows a comparable efficiency to the fixed ratio LLC based two-stage design even under the low input voltage (270V) condition. / M.S. / The electrical vehicle market is growing rapidly in recent years. However, the driving range is one of the bottlenecks which imperils market growth in the future. Thus, efficient power modules in electric vehicles are desired to extend the driving range. Low voltage dc-dc converter is one of the power modules in electric vehicles which is rated at several kilowatts and converts traction battery voltage for the vehicle auxiliary system, such as air conditioner, headlights, power steering and etc. In this thesis, a variable ratio matrix transformer-based LLC converter is proposed for the two-stage low-voltage dc-dc converter efficiency improvement. Consequently, the driving range of electric vehicles is further extended.

The development of both experimental and diagnostic equipment to assist with simulating the mechanical effects of cold X-ray deposition is covered by this work. This thesis reviews the various experimental techniques suitable for conducting the electromagnetic launch of flyer plates and the chosen technique is developed into a fully functional experimental facility. The development of a bespoke 1-dimensional computer model is also described in the text. A novel current distribution measurement technique is also fully described. This new diagnostic approach will allow the variation of the current across the width of a large conductor to be easily determined which is something not previously demonstrated.

De nos jours, pour accroître le potentiel applicatif des machines de hautes puissances pulsées, il est nécessaire de développer des modulateurs compacts capables de délivrer des impulsions de l’ordre de plusieurs Mégawatts de durée pouvant atteindre plusieurs centaines de microsecondes. Cette amélioration requiert le développement de structures innovantes dont le but est de produire aussi bien des puissances moyennes que des puissances crêtes importantes. Les modulateurs étudiés dans ce mémoire sont basés sur l’utilisation de divers transformateurs pour la génération d’impulsions de très forte puissance. Le projet AGIR (acronyme de « Architecture pour la Génération d’Impulsions Rectangulaires de forte de puissance ») est réalisé dans le cadre d’un RAPID (Régime d’Appui Pour l’Innovation Duale) financé par la Direction Générale de l’Armement (DGA). Le projet est une collaboration avec EFFITECH, une entreprise spécialisée dans les puissances pulsées. L’objectif est de développer deux générateurs pour deux gammes de puissance crête (jusqu’à 10MW pour l’un et 1GW pour l’autre). Le premier modulateur « AGIR1 » repose sur l’association d’un convertisseur AC-DC et de 12 convertisseurs résonants DC-DC qui permettent la génération de plusieurs types d’impulsions (fort courant ou forte tension) en fonction de la configuration choisie. Le second modulateur repose sur le développement d’un transformateur impulsionnel à quatre primaires synchronisés. Chaque primaire est relié à un système de mise en forme de type Blumlein dont le déclenchement est assuré par un éclateur pressurisé à trois électrodes. La synchronisation des quatre éclateurs est assurée par un générateur impulsionnel innovant à faible gigue. La principale difficulté du travail effectué au laboratoire réside dans l’étude des différents transformateurs haute-tension utilisés (résonant ou impulsionnel) et du système de synchronisation des éclateurs. Chaque élément constituant le système est étudié et simulé de manière électrostatique, électromagnétique ou électrique avant d’être réalisé et assemblé. Des essais ponctue l’étude afin de valider le fonctionnement en récurrent avec un système de dissipation thermique adapté. / Nowadays, to increase the application potential of high power pulsed machines, it is necessary to develop compact modulators able to deliver pulses in the range of several megawatts with duration of up to several hundred microseconds. This improvement requires the development of innovative structures whose purpose is to produce both average power and large peak power. Modulators studied in this thesis are based on the use of various transformers for the generation of very high power pulses. The AGIR project (French acronym for "Architecture for Rectangular High Pulse power generation") is achieved within the framework of a RAPID (Dual Innovation Support Regime) funded by the French Defense (DGA). The project is carried on by a collaboration with EFFITECH, a company specialized in pulsed powers. The goal is to develop two generators for two peak power ranges (up to 10MW for one and 1GW for the other). The first modulator "AGIR1" is based on the association of an AC-DC converter and 12 DC-DC resonant converters allowing the generation of several types of pulses (high current or high voltage) depending on the chosen configuration. The second modulator is based on the development of a four synchronized primary pulse transformer. Each primary is connected to a Blumlein pulse forming line triggered by a three-electrode pressurized spark gap. The synchronization of the four spark gaps is ensured by an innovative pulse generator with low jitter. The main difficulty of the work which was completed in the laboratory relies in the study of the different high-voltage transformers used (resonant or pulse) and the spark gap synchronization system. Each element constituting the system is studied and simulated electrostatically, electromagnetically or electrically before being realized and assembled. Trials punctuate the study to validate the recurrent operation with a suitable heat dissipation system.

Synchronous buck converter based multiphase architectures are evaluated to determine whether or not the most widespread voltage regulator topology can meet the power delivery requirements of next generation computer microprocessors. According to the prognostications, the load current will rise to 200A along with the decrease of the supply voltage to 0.5V and staggering tight dynamic and static load line tolerances. In view of these demands, researchers face serious challenges to bring forth compliant solutions that can further offer acceptable conversion efficiencies and minimum mainboard area occupancy. Among the most prominent investigation fronts are those surveying fundamental technology improvements aiming at making power semiconductor devices more effective at high switching frequency. The latter is of critical importance as the increase of the switching frequency is fundamentally recognized as the way forward to enhance power density conversion. Provided that switching losses must be kept low to enable the miniaturization of the filter components, one primary goal is to cope with semiconductor and system integration technologies enabling fast dynamic operation of ultra-low ON resistance power switches. This justifies the main focus of this thesis work, centered around a comprehensive analysis of the MOSFET switching behavior in the synchronous buck converter. The MOSFETs dynamic operation, far from being well describable with the traditional clamped inductive hard-switching mode, is strongly influenced by a number of frequently ignored linear and nonlinear parasitic elements that must be taken into account in order to fully predict real switching waveforms, understand their dynamics, and most importantly, identify and quantify the related mechanisms leading to heat generation. This will be revealed from in-depth investigations of the switched converter under fast switching speeds and heavy load. Recognizing the key relevance of appropriate modeling tools that support this task, the second focal point of the thesis aims at developing a number of suitable models for the switching analysis of power MOSFETs. Combined with a series of design guidelines and optimization procedures, these models form the basis of a proposed methodological approach, where numerical computations replace the usually enormous experimental effort to elucidate the most effective pathways towards reducing power losses. This gives rise to the concept referred to as virtual design loop, which is successfully applied to the development of a new power MOSFET technology offering outstanding dynamic and static performance characteristics. From a system perspective, the limits of the power density conversion will be explored for this and other emerging technologies that promise to open up a new paradigm in power integration capabilities.

This thesis deals with the design and construction of a single-phase switching power supply, which is intended for direct resistive heating of iron components. The power supply is especially intended for resistive heating of horse-shoes. The supply is able to deliver an output current of up to 1500 A at a power of up to 2500 W. The first part of this work deals with the design of individual parts of the unit, the second part is focused on construction and testing of the supply and the last part contains technical documentation. The power supply was successfully tested and the required output parameters were met. However some problems do exist, especially with overheating of the output rectifier and with contacting the heated component to the output leads of the supply. These problems will be discussed in the work. The power supply can be used as an alternative solution to classic means of iron heating. The methods and ideas presented in this work can be applied in a design of a similar power supply with high output current, but most of the design rules are valid generally for the given topology.

Introduction Zr-89 is a useful radionuclide for radiolabeling proteins and other molecules.1,2 There are many reports of cyclotron production of 89Zr by the 89Y (p,n) reaction. Most irradiations use thin metal backed deposits of Y and irradiation currents up to 100 µA or thicker amounts of Y or Y2O3 with ~ 20 µA irradiations.3,4 We are working to develop high specific activity 89Zr using a low energy 11 MeV cyclotron. We have found that target Y metal contains carrier Zr and higher specific activities are achieved with less Y. The goal of this work was to optimize yield while minimizing the amount of Y that was irradiated. Material and Methods All irradiations were done using a Siemens Eclipse 11 MeV proton cyclotron. Y foils were used for the experiments described here. Y2O3 was tried and abandoned due to lower yield and poor heat transfer. Yttrium metal foils from Alfa Aesar, ESPI Metals and Sigma Aldrich, 0.1 to 1 mm in thickness, were tested. Each foil was irradiated for 10 to 15 minutes. The targets to hold the Y foils were made of aluminum and were designed to fit within the “paper burn” unit of the Siemen’s Eclipse target station, allowing the Y target body to be easily inserted and removed from the system. Several Al targets of 2 cm diam. and 7.6 cm long were tested with the face of the targets from 11, 26 or 90o relative to the beam to vary watts cm−2 on the foil. The front of the foils was cooled by He convection and the foil backs by conduction to the Al target body. The target body was cooled by conduction to the water cooled Al sleeve of the target holder. Results and Conclusion The best target was two stacked, 0.25 mm thick, foils to stop beam. 92% of the 89Zr activity was in the front 0.25 mm Y foil. With the greatest slant we could irradiate up to 30 µA of beam on tar-get. However, the 13×30 mm dimensions of the foil was more mass (0.41 g) and lower specific activity than was desired. Redesign of the target gave a target 90o to the beam with 12×12 mm foils (0.15 g/foil) that were undamaged with up to 30 µA irradiation when two foils were used. This design has a reduction in beam at the edges of ~10%. With this design, a single Y foil, 0.25 mm thick sustained over 31 µA of beam and a peak power on target of 270 watts cm−2. The product was radionuclidically pure 89Zr after all 89mZr and small amounts of 13N produced from oxygen at the surface had decayed (TABLE 1). Our conclusion is that the optimum target is a single 0.25 mm thick Y foil to obtain the greatest specific activity at this proton energy. This produces 167 MBq of 89Zr at EOB with a 15 minute and 31 µA irradiation. We are continuing to redesign the clamp design to reduce losses at the edge of the beam.

This work focuses on a better understanding of the behavior of organic light emitting devices (OLEDs) under intense electrical excitation. Attaining high exciton densities in organic semiconductors by electrical excitation is of special interest for the field of organic semiconductor lasers (OSLs). In these devices, the high singlet exciton density needed in the active layer to obtain population inversion is easily created by pulsed optical pumping, but direct electrical pumping has not been achieved yet. First, the steps necessary to achieve stable high current densities in organic semiconductors are discussed. After determining the optimal excitation scheme using single p-doped transport layers, the device complexity is increased up to full p-i-n OLEDs with their power dependent emission spectra. For this purpose, two exemplary emitter systems are chosen: the fluorescent laser dye 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) doped into Aluminum(III)bis (2-methyl-8-quinolinato)-4-phenylphenolate (Alq3) and the efficient phosphorescent emitter system N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine (alpha-NPD) doped by Iridium(III) bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate) (Ir(MDQ)2(acac)). For pulsed excitation using 50 ns pulses and a repetition rate of 1 kHz, single 100 nm thin p- and n-doped transport layers sustain current densities of over 6 kA/cm2. While the maximum current density decreases with increasing device thickness, the full OLEDs still sustain current densities beyond 800 A/cm2 and exhibit a continuously increasing emission intensity with increasing input power. Next, the time-resolved emission behavior of the singlet and triplet emitter device at high excitation densities is analyzed on the nanosecond scale. Here, the peak emission intensity of the phosphorescent emitter system is found to be more than eight times lower than for the singlet emitter system at comparable current densities. The triplet emitter system exhibits a slow rise of the EL after turn-on which prevents the usage of shorter pulses to enable higher current densities. The singlet emitter system, in contrast, exhibits a fast turn-on and reaches the maximum emission intensity within less than 20 ns. By several additional experiments including streak camera measurements and pump-probe experiments, the strong EL overshoot observed in the first few ns is successfully attributed to a reduced emission intensity in the steady state due to singlet-triplet annihilation. Hence, the separation of singlet emission and singlet-triplet quenching in time domain is demonstrated. At 550 A/cm2 and 10 ns pulse rise time, a peak luminance of 1.5E6 cd/m2 is recorded. Finally, the experimental results are validated by modeling the singlet and triplet population dynamics in the emission layer of the fluorescent system to explain the time-resolved emission characteristics. Using a set of rate equations for the polaron density and the singlet and triplet exciton densities, the overshoot in singlet exciton density at the device turn-on is attributed to the separation of singlet emission and triplet quenching in time domain. Furthermore, by fitting the experimental data, the triplet-triplet annihilation rate in the host guest system is shown to become exciton density dependent at sufficiently high excitation density. / Der Schwerpunkt dieser Arbeit liegt auf dem besseren Verständnis des Verhaltens von organischen Leuchtdioden (OLEDs) bei intensiver elektrischer Anregung. Das Erreichen hoher Exzitonendichten in organischen Halbleitern ist insbesondere für organische Halbleiterlaser (organic semiconductor lasers, OSLs) von Interesse. Hierbei werden die für die Inversion benötigten hohen Singulett Exzitonendichten zwar leicht mittels gepulstem optischen Anregen (Pumpen) erreicht, jedoch konnte eine elektrische Anregung bisher noch nicht realisiert werden. Der erste Abschnitt befasst sich mit dem Erreichen von hohen Stromdichten und den dazu nötigen Schritten. Nach dem Ermitteln des optimalen Anregungsschemas an p-dotierten Einzelschichten wird die Komplexität des Systems Schritt für Schritt bis zur kompletten p-i-n OLED erhöht. Hierfür wurden exemplarisch zwei verschiedene Emittersysteme ausgewählt: Aluminum(III)bis (2-methyl-8-quinolinato)-4-phenylphenolate (Alq3) dotiert mit dem fluoreszenten Laserfarbstoff 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) und der effiziente phosphoreszente Emitter Iridium(III)bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate) (Ir(MDQ)2(acac)) in einer N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine (alpha-NPD) Matrix.Bei gepulster Anregung mit einer Pulsweite von 50 ns und einer Wiederholungsrate von 1 kHz sind in 100 nm dünnen p- und n-dotierten Transportschichten Stromdichten von mehr als 6 kA/cm2 möglich. Der Maximalstrom sinkt mit zunehmender Gesamtschichtdicke ab. Die kompletten p-i-n OLEDs ermöglichen eine Stromdichte von über 800 kA/cm2 und weisen eine kontinuierlich mit der Stromdichte steigende Emissionsintensität auf. Anschließend wird die zeitlich aufgelöste Elektrolumineszenz der Singulett- und Triplett-Emitter OLEDs mit Nanosekunden-Auflösung untersucht. Die phosphoreszente OLED weist hierbei, im Vergleich zur fluoreszenten OLED bei vergleichbarer Stromdichte, eine mehr als achtmal geringere Emissionsintensität auf. Des Weiteren steigt die Emissionsintensität nur langsam an, die maximale Intensität wird erst nach 120 ns erreicht. Dies steht im Widerspruch zum Erreichen höherer Stromdichten mittels kürzerer Pulse. Die fluoreszente OLED hingegen zeigt ein schnelles Ansteigen der Emissionsintensität, die maximale Intensität wird nach weniger als 20 ns erreicht. Anhand von zusätzlichen Untersuchungen kann das beobachtete starke Überschießen der Elektrolumineszenz innerhalb der ersten Nanosekunden einer durch Singulett-Triplett Annihilation reduzierten Emission im Gleichgewichtszustand zugeordnet werden. Diese Experimente dokumentieren somit die zeitliche Trennung von Fluoreszenz und Singulett-Triplett Annihilation. Bei einer Stromdichte von 550 A/cm2 und 10 ns Flankenanstiegszeit wird eine maximale Lumineszenz von 1.5E6 cd/m2 gemessen. Der letzte Abschnitt befasst sich mit der Bestätigung der experimentellen Ergebnisse durch die Simulation der Dynamik von Singulett- und Triplett-Exzitonendichte in der Emissionsschicht. Mit Hilfe eines Satzes von gekoppelten Differenzialgleichungen für die Dichte der Polaronen, Singulett Exzitonen und Triplett Exzitonen lässt sich das Überschießen der Elektrolumineszenz der fluoreszenten OLED eindeutig der zeitlichen Trennung von Singulett Emission und Singulett-Triplett Annihilation zuordnen. Außerdem kann durch das Fitten der experimentellen Daten dargestellt werden, dass die Triplett-Triplett Annihilationsrate in dem untersuchten fluoreszenten Emittersystem bei ausreichend hohen Anregungsdichten eine starke Abhängigkeit von der Dichte der Triplett Exzitonen aufweist.

This work focuses on a better understanding of the behavior of organic light emitting devices (OLEDs) under intense electrical excitation. Attaining high exciton densities in organic semiconductors by electrical excitation is of special interest for the field of organic semiconductor lasers (OSLs). In these devices, the high singlet exciton density needed in the active layer to obtain population inversion is easily created by pulsed optical pumping, but direct electrical pumping has not been achieved yet. First, the steps necessary to achieve stable high current densities in organic semiconductors are discussed. After determining the optimal excitation scheme using single p-doped transport layers, the device complexity is increased up to full p-i-n OLEDs with their power dependent emission spectra. For this purpose, two exemplary emitter systems are chosen: the fluorescent laser dye 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) doped into Aluminum(III)bis (2-methyl-8-quinolinato)-4-phenylphenolate (Alq3) and the efficient phosphorescent emitter system N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine (alpha-NPD) doped by Iridium(III) bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate) (Ir(MDQ)2(acac)). For pulsed excitation using 50 ns pulses and a repetition rate of 1 kHz, single 100 nm thin p- and n-doped transport layers sustain current densities of over 6 kA/cm2. While the maximum current density decreases with increasing device thickness, the full OLEDs still sustain current densities beyond 800 A/cm2 and exhibit a continuously increasing emission intensity with increasing input power. Next, the time-resolved emission behavior of the singlet and triplet emitter device at high excitation densities is analyzed on the nanosecond scale. Here, the peak emission intensity of the phosphorescent emitter system is found to be more than eight times lower than for the singlet emitter system at comparable current densities. The triplet emitter system exhibits a slow rise of the EL after turn-on which prevents the usage of shorter pulses to enable higher current densities. The singlet emitter system, in contrast, exhibits a fast turn-on and reaches the maximum emission intensity within less than 20 ns. By several additional experiments including streak camera measurements and pump-probe experiments, the strong EL overshoot observed in the first few ns is successfully attributed to a reduced emission intensity in the steady state due to singlet-triplet annihilation. Hence, the separation of singlet emission and singlet-triplet quenching in time domain is demonstrated. At 550 A/cm2 and 10 ns pulse rise time, a peak luminance of 1.5E6 cd/m2 is recorded. Finally, the experimental results are validated by modeling the singlet and triplet population dynamics in the emission layer of the fluorescent system to explain the time-resolved emission characteristics. Using a set of rate equations for the polaron density and the singlet and triplet exciton densities, the overshoot in singlet exciton density at the device turn-on is attributed to the separation of singlet emission and triplet quenching in time domain. Furthermore, by fitting the experimental data, the triplet-triplet annihilation rate in the host guest system is shown to become exciton density dependent at sufficiently high excitation density. / Der Schwerpunkt dieser Arbeit liegt auf dem besseren Verständnis des Verhaltens von organischen Leuchtdioden (OLEDs) bei intensiver elektrischer Anregung. Das Erreichen hoher Exzitonendichten in organischen Halbleitern ist insbesondere für organische Halbleiterlaser (organic semiconductor lasers, OSLs) von Interesse. Hierbei werden die für die Inversion benötigten hohen Singulett Exzitonendichten zwar leicht mittels gepulstem optischen Anregen (Pumpen) erreicht, jedoch konnte eine elektrische Anregung bisher noch nicht realisiert werden. Der erste Abschnitt befasst sich mit dem Erreichen von hohen Stromdichten und den dazu nötigen Schritten. Nach dem Ermitteln des optimalen Anregungsschemas an p-dotierten Einzelschichten wird die Komplexität des Systems Schritt für Schritt bis zur kompletten p-i-n OLED erhöht. Hierfür wurden exemplarisch zwei verschiedene Emittersysteme ausgewählt: Aluminum(III)bis (2-methyl-8-quinolinato)-4-phenylphenolate (Alq3) dotiert mit dem fluoreszenten Laserfarbstoff 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) und der effiziente phosphoreszente Emitter Iridium(III)bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate) (Ir(MDQ)2(acac)) in einer N,N'-di(naphthalen-1-yl)-N,N'-diphenyl-benzidine (alpha-NPD) Matrix.Bei gepulster Anregung mit einer Pulsweite von 50 ns und einer Wiederholungsrate von 1 kHz sind in 100 nm dünnen p- und n-dotierten Transportschichten Stromdichten von mehr als 6 kA/cm2 möglich. Der Maximalstrom sinkt mit zunehmender Gesamtschichtdicke ab. Die kompletten p-i-n OLEDs ermöglichen eine Stromdichte von über 800 kA/cm2 und weisen eine kontinuierlich mit der Stromdichte steigende Emissionsintensität auf. Anschließend wird die zeitlich aufgelöste Elektrolumineszenz der Singulett- und Triplett-Emitter OLEDs mit Nanosekunden-Auflösung untersucht. Die phosphoreszente OLED weist hierbei, im Vergleich zur fluoreszenten OLED bei vergleichbarer Stromdichte, eine mehr als achtmal geringere Emissionsintensität auf. Des Weiteren steigt die Emissionsintensität nur langsam an, die maximale Intensität wird erst nach 120 ns erreicht. Dies steht im Widerspruch zum Erreichen höherer Stromdichten mittels kürzerer Pulse. Die fluoreszente OLED hingegen zeigt ein schnelles Ansteigen der Emissionsintensität, die maximale Intensität wird nach weniger als 20 ns erreicht. Anhand von zusätzlichen Untersuchungen kann das beobachtete starke Überschießen der Elektrolumineszenz innerhalb der ersten Nanosekunden einer durch Singulett-Triplett Annihilation reduzierten Emission im Gleichgewichtszustand zugeordnet werden. Diese Experimente dokumentieren somit die zeitliche Trennung von Fluoreszenz und Singulett-Triplett Annihilation. Bei einer Stromdichte von 550 A/cm2 und 10 ns Flankenanstiegszeit wird eine maximale Lumineszenz von 1.5E6 cd/m2 gemessen. Der letzte Abschnitt befasst sich mit der Bestätigung der experimentellen Ergebnisse durch die Simulation der Dynamik von Singulett- und Triplett-Exzitonendichte in der Emissionsschicht. Mit Hilfe eines Satzes von gekoppelten Differenzialgleichungen für die Dichte der Polaronen, Singulett Exzitonen und Triplett Exzitonen lässt sich das Überschießen der Elektrolumineszenz der fluoreszenten OLED eindeutig der zeitlichen Trennung von Singulett Emission und Singulett-Triplett Annihilation zuordnen. Außerdem kann durch das Fitten der experimentellen Daten dargestellt werden, dass die Triplett-Triplett Annihilationsrate in dem untersuchten fluoreszenten Emittersystem bei ausreichend hohen Anregungsdichten eine starke Abhängigkeit von der Dichte der Triplett Exzitonen aufweist.

In dieser Arbeit werden versilberte Hochstrom-Steckverbindungen mit Kontaktelementen betrachtet, die in der Elektroenergieversorgung bei Belastung mit Fehlerströmen im Bereich von 24 µs bis 5 s eingesetzt werden. Am Flach- und Rundeinbau der Kontaktelemente werden Kurzschlussversuche im Bereich von (0,01…5) s durchgeführt. Der Kurzschlussstrom erwärmt die Steckverbindung und die Kontaktelemente innerhalb dieser Zeit auf mehrere 100 °C und führt zu einer thermisch aktivierten Schädigung. Dabei baut sich die Kontaktkraft durch Spannungsrelaxation zum Teil ab, und es kann zum Verschweißen der Mikrokontakte und Blasenbildung durch lokales Ablösen der Be-schichtung kommen. Bei einer zu starken Schädigung kann ein sicherer Betrieb der Steckverbindung nicht mehr si-chergestellt werden. Daher werden für die Mechanismen der Schädigung Grenzwerte festgelegt und eine maximale Belastung definiert. Ausgehend von den experimentellen Untersuchungen wird ein Berechnungsmodell auf Basis der Finiten-Elemente-Methode weiterentwickelt. Ein vereinfachtes Widerstandsmodell der Punktkontakte abhängig von Kontaktkraft und Kontakthärte bildet dabei das Verhalten der Mikrokontakte nach. Da das Verhalten der Kontakthärte bei starker Erwärmung im ms-Bereich nur unzureichend erforscht ist, werden aus Experimenten näherungsweise die benötigten Parameter bestimmt. Mit dem erweiterten Berechnungsmodell ist es möglich, die thermische Wirkung praktischer Kurzschlussversuche nachzubilden. Eine wesentliche Erkenntnis ist, dass die Höhe des Stoßstroms zu Beginn des Kurzschlusses einen entscheidenden Einfluss auf die maximale Erwärmung hat. Bei sehr hohen Stoßströmen am Anfang eines Kurzschlusses wird der Kontaktwiderstand stark reduziert. Für den weiteren Verlauf des Kurzschlusses entsteht in den Kontakten daher weniger Wärme, als wenn diese Reduktion nicht stattfindet. Das bedeutet, dass DC-Kurzschlüsse unter Umständen zu einer höheren thermischen Belastung und mechanischen Schädigung führen können als AC-Kurzschlüsse mit gleichem Effektivwert. Experimente bestätigen diese Theorie. Dies gilt allerdings nur, wenn der Stoßstrom nicht zum sofortigen Verschweißen der Kontakte führt. Anhand der Erkenntnisse aus den Experimenten und Berechnungen werden Empfehlungen für die Auslegung und die Prüfung von Hochstrom-Steckverbindungen gegeben. Es zeigte sich, dass das für Prüfungen oft verwendete I2t-Kriterium bei Steckverbindungen nur sehr eingeschränkt anwendbar ist. Die Kurzschlussdauer kann damit nur um ca. (13…17) % verändert werden, ohne dass sich die Beanspruchung in der Prüfung unzulässig ändert. Alternativ schlägt die Arbeit das Ixt-Kriterium vor. Dieses lässt es bei bekannter Geometrie der Steckverbindung zu, einen Prüfstroms in einem vielfach größeren Zeitbereich einzustellen und erzeugt dabei eine vergleichbare thermische Beanspruchung oder mechanische Schädigung. Ein Erwärmen der Steckverbindung auf die maximal zulässige Betriebstemperatur vor dem Kurzschluss, was bei-spielsweise bei einem Fehler im realen Betrieb stattfinden kann, hat einen vergleichsweise geringeren Einfluss auf die Erwärmung und die mechanische Schädigung. Hintergrund ist, dass die Vorerwärmung zu einer Reduktion der Kon-takthärte führt und damit große Kontaktflächen erzeugt, die einen geringen Kontaktwiderstand haben. Hierdurch entsteht weniger Verlustleistung, was die Erwärmung der Steckverbindung reduziert. Aus den gewonnen Erkenntnissen werden Empfehlungen für die Auslegung, Prüfung und die Modellierung des Kurz-schlussverhaltens von Steckverbindungen mit Kontaktelementen für die Elektroenergieversorgung abgeleitet. / In this thesis, silver plated plug-in connectors for electrical power supply under short time current load are investigat-ed. The duration of the short time or short circuit current load is between 24 µs and 5 s. Both flat and round model plug-in connectors are stressed with the short time current. This current heats the plug and socket as well as the contact elements by several hundred Kelvin, which can lead to thermally induced damages. These may include a reduction of the contact force, welding of the contact points and blistering of the coating. If the damage is too severe, safe operation at the rated continuous current may not be able after the short circuit. Thus, limiting loads are defined which ensure a safe operation. Based on the experiments, a finite element model is refined. A simplified model of contact points is used to imple-ment the contact behaviour. This model implements the overtemperature in the contacts, the contact hardness and the contact force into the calculation. In fact, few data for load in the range of milliseconds are available on this matter. Hence, experiments are used for an approximation of the required parameters. The refined model allows for a good correlation between experiments and calculated data. A key finding is that the magnitude of peak current at the beginning of the short circuit has a decisive influence on the maximum heating. In case of a very high peak current at the beginning of a short circuit, the contact resistance is greatly reduced. For the further course of the short-circuit, therefore, less heat is generated in the contacts than if this reduction did not take place. This means that DC short circuits can under certain circumstances lead to higher thermal stress and mechanical damage than AC short circuits with the same RMS value. This is only valid if the peak current does not heat the contact points up to their welding temperature. Experiments confirm this theory. Recommendations for the dimensioning and testing of high current connectors are given on the basis of the experi-ments and the calculations. It was shown that the I²t-criterion, which is often used for altering the test duration in recommended standards, can only be applied to a very limited extent. The short circuit duration can only be changed by about (13…17) % or otherwise the severity of the mechanical damage is likely to change as well. As an alternative, it is proposed to use the newly introduced Ixt-criterion. If the geometry of the connector is known, this criterion allows alternating the short circuit duration in a broader range without major changes in the severity of the test. In a real world application, short circuits may occur while the connectors are under heavy load, which means that at the beginning of the short time current, the connector is preheated. Tests showed that this has only a minor impact on the temperature rise and the mechanical damage of the contact elements. The reason for this behaviour is that, due to the preheating, the hardness of the contact material drops and the contact area is enlarged. This results in a comparatively lower contact resistance and less power loss is generated. This reduces the influence of the higher start-ing temperatures to a certain degree. On the basis of the findings, recommendations are derived for the design, testing and modelling of the short-circuit behaviour of connectors with contact elements for electrical power supply.