In the last decades, investigations of organic light-emitting diodes (OLEDs) have tackled several key challenges of this lighting technology and have brought the electron to photon conversion efficiency close to unity. However, currently only 20% to 30% of the photons can typically be extracted from OLED structures, as total internal reflection traps the major amount of the generated light inside the devices. This work focuses on the optimization of the optical properties of top-emitting OLEDs, in which the emission is directed away from the substrate. In this case, opaque materials, e.g. a metal foil or a display backplane can be used as substrate as well. Even though top-emitting OLEDs are often preferred for applications such as displays, two main challenges remain: the application of light extraction structures and the deposition of highly transparent materials as top electrode, without harming the organic layers below. Both issues are addressed in this work. First, top-emitting OLEDs are deposited on top of periodically corrugated light outcoupling structures, in order to extract internally trapped light modes by Bragg scattering and to investigate the basic scattering mechanisms in these devices. It is shown for the first time that the electrical performance is maintained in corrugated top-emitting OLEDs deposited on top of light extraction structures. Furthermore, as no adverse effects to the internal quantum efficiency have been observed, the additional emission from previously trapped light modes directly increases the device efficiency. It has been proven that the spectral emission of corrugated OLEDs is determined by the interference of all light modes inside the air light-cone, including the observation of destructive interference and anti-crossing phenomena. The formation of a coherently coupled mode pair of the initial radiative cavity mode and a Bragg scattered mode has been first observed, when grating structures with an aspect ratio > 0.2 are applied. There, the radiative cavity mode partially vanishes. The observation and analysis of such new emission phenomena in corrugated top-emitting OLEDs has been essential in obtaining a detailed insight on fundamental scattering processes as well as for the optimization and control of the spectral emission by light extraction structures. Second, the adverse impact of using only moderately transparent silver electrodes in white top-emitting OLEDs has been compensated improving the metal film morphology, as the organic materials often prevent a replacement by state-of-the-art electrodes, like Indium-tin-oxide (ITO). A high surface energy Au wetting layer, also in combination with MoO3, deposited underneath the Ag leads to smooth, homogeneous, and closed films. This allows to decrease the silver thickness from the state-of-the-art 15 nm to 3 nm, which has the advantage of increasing the transmittance significantly while maintaining a high conductivity. Thereby, a transmittance comparable to the ITO benchmark has been reached in the wavelength regime of the emitters. White top-emitting OLEDs using the wetting layer electrodes outperform state-of-the art top-emitting devices with neat Ag top electrodes, by improving the angular colorstability, the color rendering, and the device efficiency, further reaching sightly improved characteristics compared to references with ITO bottom electrode. The enormous potential of wetting layer metal electrodes in improving the performance of OLEDs has been further validated in inverted top-emitting devices, which are preferred for display applications, as well as transparent OLEDs, in which the brittle ITO electrode is replaced by a wetting layer electrode. Combining both concepts, wetting layer electrodes and light extraction structures, allows for the optimization of the grating-OLED system. The impact of destructive mode interference has been reduced and thus the efficiency increased by a decrease of the top electrode thickness, which would have not been achieved without a wetting layer. The optimization of corrugated white top-emitting OLEDs with a top electrode of only 2 nm gold and 7 nm silver on top of a grating with depth of 150 nm and period of 0.8 µm have yielded a reliable device performance and increased efficiency by a factor of 1.85 compared to a planar reference (5.0% to 9.1% EQE at 1000 cd/m2). This enhancement is comparable to common light extraction structures, such as half-sphere lenses or microlens foils, which are typically restricted to bottom-emitting devices. Overall, the deposition of top-emitting OLEDs on top of light extraction structures finally allow for an efficient extraction of internally trapped light modes from these devices, while maintaining a high device yield. Finally, the investigations have resulted in a significant efficiency improvement of top-emitting OLEDs and the compensation of drawbacks (optimization of the white light emission and the extraction of internal light modes) in comparison to the bottom-emitting devices. The investigated concepts are beneficial for OLEDs in general, since the replacement of the brittle ITO electrodes and the fabrication of roll-to-roll processing compatible light extraction structures are also desirable for bottom-emitting, or transparent OLEDs.

Im Jahr 1964 wurde eine Theorie der Supraleitung vorgestellt, welche Cooper-Paarbindungen mit nichtverschwindendem Gesamtimpuls berücksichtigt. Sie wird nach den maßgeblich beteiligten Physikern P. Fulde, R. A. Ferrell, A. I. Larkin und Y. N. Ovchinnikov als FFLO-Supraleitung bezeichnet [1, 2]. Aufgrund recht anspruchsvoller Voraussetzungen kommen nur wenige Festkörper-Systeme in Frage, die eine FFLO-Phase ausbilden könnten. Im Jahr 2007 konnte R. Lortz durch Messungen der spezifischen Wärme an dem organischen Supraleiter kappa-(ET)2Cu(NCS)2 einen soliden Nachweis für eine weitere thermodynamische Supraleitungs-Phase in hohen Magnetfeldern erbringen [3]. ET steht hierbei für Bis-(ethylen-dithiolo)-tetrathiafulvalen. Die Hochfeld-Phase von kappa-(ET)2Cu(NCS)2 erfüllt alle bekannten Bedingungen für einen FFLO-Zustand. Diese Arbeit befasst sich mit der Erbringung eines gleichwertigen Beweises einer thermodynamischen Hochfeld-Supraleitungs-Phase in dem quasi-zweidimensionalen und vollständig organischen Supraleiter beta\'\'-(ET)2SF5CH2CF2SO3 durch hochauflösende Messungen der spezifischen Wärme. Darüber hinaus sollte durch eine präzise Ausrichtung der Probe zum Magnetfeldvektor die Feldorientierungsabhängigkeit der spezifischen Wärme und damit der supraleitenden Phasen bestimmt werden. [1] - P. Fulde and R.A. Ferrell, Phys. Rev., 135:A550, (1964). [2] - A.I. Larkin and Y.N. Ovchinnikov, Zh. Eksp. Teor. Fiz., 47:1136,(1964). [3] - R. Lortz et al., Phys. Rev. Lett., 99:187002, (2007).

This study focuses on the investigation of the key parameters that determine the optical and electrical characteristics of inverted top-emitting organic light emitting diodes (OLED). A co-deposition of small molecules in vacuum is used to establish electrically doped films that are applied in n-i-p layered devices. The knowledge about the functionality of each layer and parameter is important to develop efficient strategies to reach outstanding device performances. In the first part, the thin film optics of top-emitting OLEDs are investigated, focusing on light extraction via cavity tuning, external outcoupling layers (capping layer), and the application of microlens films. Optical simulations are performed to determine the layer configuration with the maximum light extraction efficiency for monochrome phosphorescent devices. The peak efficiency is found at 35%, while varying the thickness of the charge transport layers, the semitransparent anode, and the capping layer simultaneously. Measurements of the spatial light distribution validate, that the capping layer influences the spectral width and the resonance wavelength of the extracted cavity mode, especially for TM polarization. Further, laminated microlens films are applied to benefit from strong microcavity effects in stacked OLEDs by spatial mixing of external and to some extend internal light modes. These findings are used to demonstrate white top-emitting OLEDs on opaque substrates showing power conversion efficiencies up to 30 lm/W and a color rendering index of 93, respectively. In the second part, the charge carrier management of n-i-p layered diodes is investigated as it strongly deviates from that of the p-i-n layered counterparts. The influence of the bottom cathode material and the electron transport layer is found to be negligible in terms of driving voltage, which means that the assumption of an ohmic bottom contact is valid. The hole transport and the charge carrier injection at the anode is much more sensitive to the evaporation sequence, especially when using hole transport materials with a glass transition temperature below 100°C. As a consequence, thermal annealing of fabricated inverted OLEDs is found to drastically improve the device electronics, resulting in lower driving voltages and an increased internal efficiency. The annealing effect on charge transport comes from a reduced charge accumulation due to an altered film morphology of the transport layers, which is proven for electrons and for holes independently. The thermal treatment can further lead to a device degradation. Finally, the thickness and the material of the blocking layers which usually control the charge confinement inside the OLED are found to influence the recombination much more effectively in inverted OLEDs compared to non-inverted ones.

Organic materials with fascinating/intriguing electronic properties have been the driving force for many research activities in the past, and in particular for important progress in materials science covering both new functional materials as well as theoretical developments. In addition, charge transfer, i. e., the addition or removal of charges to or from molecules in organic solids is one route to modify and control their electronic properties. Recently, the discovery of superconductivity in several alkali metal intercalated hydrocarbon systems (picene, phenanthrene, coronene and 1,2;8,9-dibenzopentacene) with rather high transition temperatures has opened a new chapter in organic material science as well as solid-state physics. The search for a microscopic understanding of the mechanism that drives materials superconducting always has initiated a large number of scientific activities, and there are numerous examples where these activities have provided major advancement. A basic foundation of this understanding is the knowledge of the electronic properties of the material under investigation. In this context, this thesis reports first, very detailed insight into the electronic structure of both undoped as well as potassium doped picene, coronene and 1,2;8,9-dibenzopentacene using electron energy-loss spectroscopy (EELS) as main experimental method. Additionally, also photoemission spectroscopy experiments have been performed to investigate the occupied electronic density of states close to the chemical potential. In order to learn more about the electronic structure we have compared the results we obtained from EELS and photoemission spectroscopy with theoretical calculations based on Density functional theory (DFT) using the local-density approximation (LDA). We identify the peculiar case of very close lying conduction bands that upon doping harbour the electrons that form the Cooper-pairs in the superconducting state. Moreover, the presented data display substantial changes in the electronic excitation spectrum upon doping, whereas in the doped case the appearance of one new peak (for picene) and several new peaks (for coronene and 1,2;8,9-dibenzopentacene) in the former optical gap is reported. By using a Kramers–Kronig analysis (KKA) it is possible to gain information about the nature of this doping introduced excitations. In particular, in case of picene, the new low energy feature can be assigned to a charge carrier plasmon. Interestingly, this plasmon disperses negatively upon increasing momentum transfer, which deviates significantly from the traditional picture of metals based on the homogeneous electron gas. The comparison with calculations of the loss function of potassium intercalated picene shows how this finding is the result of the competition between metallicity and electronic localization on the molecular units. Furthermore, core level excitation measurements show the reduction of the lowest lying C 1s excitation feature, which clearly demonstrates that potassium intercalation leads to a filling of the conduction bands with electrons. Additionally, the measurements of potassium intercalated 1,2;8,9-dibenzopentacene clearly indicate the formation of particular doped phases with compositions K_xdibenzopentacene (x = 1, 2, 3), whereas the data suggest that K_1dibenzopentacene has an insulating ground state with an energy gap of about 0.9 eV, while K_2dibenzopentacene and K_3dibenzopentacene might well be metallic, because of the absent of an energy gap in the electronic excitation spectra. Interestingly, a comparison of the photoemission as well as EELS spectra of undoped 1,2;8,9-dibenzopentacene and pentacene reveal that the electronic states close to the Fermi level and the electronic excitation spectra of the two materials are extremely similar, which is due to the fact, that the additional two benzene rings in 1,2;8,9-dibenzopentacene virtually do not contribute to the delocalized pi molecular orbitals close to the Fermi level. This close electronic similarity is in contrast to the behavior upon potassium doping, where evidence for a Mott state has been reported in the case of pentacene. A comparison of the low energy excitation spectra of chrysene with picene (phenacenes) as well as tetracene with pentacene (acenes) crystals reveal a significant difference between the former and the latter two materials. While for the phenacenes (zigzag arrangement) the excitation onset is characterized by up to five weak excitation features with only small anisotropy and without visible Davydov splitting within the a*, b*-planes, the acene (linear arrangement) spectra are dominated by a large excitation close to the onset and a sizable Davydov splitting. The presented data show further that the spectral shape of the pentacene excitation spectrum provides clear evidence for a large admixture of molecular Frenkel-type excitons with charge-transfer excitations resulting in excited states with a significantly mixed character. This conclusion is in good agreement with recent advanced calculations which predicted a charge-transfer admixture to the lowest singlet excitation which is significantly dependent upon the length of the acene molecules. Moreover, also for picene and chrysene we observe differences which point towards an increased charge-transfer contribution to the singlet excitation spectrum in the former. Finally, investigations of the electronic properties of undoped and potassium doped chrysene, a close relative of picene, show that the doping introduced changes are in a similar range such as observed in case of picene. Interestingly, due to the analogy between the observed changes in the electronic structure upon potassium doping between chrysene and picene and further similarity in the crystal structure we speculate that chrysene is a promising candidate for another aromatic hydrocabon superconductor.

In dieser Arbeit wurde untersucht, wie gut bestimmte aliphatische Verbindungen, die selbstorganisierende Monolagen bilden, als Dielektrikum für organische Transistoren geeignet sind. Die auf Silicium- und Aluminiumoberflächen adsorbierten Verbindungen wurden mittels Ellipsometrie, AFM, STM und XPS charakterisiert, und die Packungsdichte, Ordnung und Oberflächenbelegung der Monolagen ermittelt. Zwischen den experimentellen Ergebnissen und denen von Computersimulationen der räumlichen Anordnung der Moleküle ergab sich eine gute Übereinstimmung. Alle untersuchten Monolagen zeigen keine Fernordnung. Der Grad der Nahordnung hängt von der Wahl der Anker- und Endgruppe ab. Die größte Packungsdichte wurde für die Verbindungen mit Phosphonsäure-Ankergruppe und Methyl-Endgruppe festgestellt. Für Monolagen der Verbindung n-Octadecylphosphonsäure auf Aluminium wurde ein Molekülabstand von 0.35 nm ermittelt. Mit dieser Verbindung als Gate-Dielektrikum wurden funktionsfähige organische Transistoren und integrierte Schaltungen demonstriert.

Molecular doping is a key technique for realizing high efficient organic light-emitting diodes (OLEDs) and photovoltaics (OPV). Furthermore, its most recent application in organic field-effect transistors (OFETs) marks a milestone on the roadmap towards flexible organic CMOS technology. However, in contrast to silicon based devices, the understanding of the fundamental processes of molecular doping is still controversially discussed. This work aims at the detailed analysis of the molecular doping process by employing Photoelectron spectroscopy (PES) on various doped thin-films prepared by co-evaporation in vacuum. Here, the focus is on explanation of the experimental findings by a statistical description in order to contribute to the fundamental understanding of the doping mechanism. First, the Fermi level shifts in thin-films of the common hole transport materials MeO-TPD, ZnPc, and pentacene p-doped by the acceptors C60F36 and F6-TCNNQ are studied. The precise control of molar doping ratios as low as 1e−5 is demonstrated, allowing analysis of the doping properties in a much broader range as previously accessible. Characteristic kinks and slopes in the Fermi level vs. doping concentration diagrams are found. Furthermore, the doping efficiency is found to decrease with increasing doping concentrations to just a few percent at molar ratios above 0.1. By numerically solving the charge neutrality equation using a classical semiconductor physics approach, these findings are explained by trap-limitation, dopant saturation, and reserve regimes as known from inorganic semiconductor physics. Using the example of p-doped MeO-TPD thin-films, it is finally demonstrated that the density of deep gap states depends on the purity degree of the host material. Similar studies are conducted on thin-films of C60, ZnPc, and pentacene n-doped by the di-metal complex W2(hpp)4. The corresponding Fermi level plots possess also host material specific kinks and slopes, which however, can be explained by application of the statistical doping description and assuming just dopant saturation and trap-limitation. Furthermore, it is demonstrated that electron traps with defined density can intentionally be introduced in pentacene by co-evaporation of C60 and gradually filled-up by n-doping with W2(hpp)4. In contrast to p-dopants, the highly efficient n-dopant W2(hpp)4 is prone to degradation in air due to its low IP of just 2.4eV. Therefore, the degradation of pure films of W2(hpp)4 as well as of n-doped films applying various host materials is studied under air exposure by conductivity measurements and PES. An unexpected (partial) passivation of W2(hpp)4 molecules against oxidation is found, however, this effect is identified to depend on the energy levels of the used host material. This finding is explained by a down-shift of the W2(hpp)4 energy levels upon charge transfer to a host material with deeper lying energy levels and thus allows for new conclusions on the relative alignment of the energy levels of dopant and host molecules in doped films in general. The maximum open-circuit voltage Voc of BHJ solar cells is limited by the effective HOMO(donor)-LUMO(acceptor) gap of the photo-active absorber blend. Therefore, the relative energy levels within ZnPc:C60 blend layers are furthermore investigated by PES, identifying an increase of the HOMO(ZnPc)-LUMO(C60) gap by 0.25 eV when varying the blend stoichiometry from 6:1 to 1:6. The trend in this gap correlates with observed changes in Voc of respective BHJ solar cells as well as with measured charge transfer energies. As physical origins for the changed energy levels, a suppressed crystallization of the C60 phase due to presence of donor molecules as well as concentration-dependent growth modes of the ZnPc phase are discussed.

This thesis is about the development and validation of a numerical model for the simulation of the current-voltage characteristics of organic thin-film devices. The focus is on the analysis of a white organic light-emitting diode (OLED) with fluorescent blue and phosphorescent red and green emitters. The simulation model describes the charge transport as a one-dimensional drift-diffusion current and is developed on the basis of the Scharfetter-Gummel method. It incorporates modern theories for the charge transport in disordered organic materials, which are considered by means of special functions for the diffusion coefficient and the charge-carrier mobility. The algorithm is designed such that it can switch between different models for mobility and calculates both transient and steady-state solutions. In the analysis of the OLED, electron and hole transport are investigated separately in series of single-carrier devices. These test devices incorporate parts of the layers in the OLED between symmetrically arranged injection layers that are electrically doped. Thereby, the OLED layer sequence is reconstructed step by step. The analysis of the test devices allows to obtain the numerous parameters which are required for the simulation of the complete OLED and reveals many interesting features of the OLED. For instance, it is shown how the accumulation of charge carriers in front of an interface barrier increases the mobility and the transfer rate across the interface. Furthermore, it is demonstrated how to identify charge-trapping states. This leads to the detection of deep trap states in the emission zone of the OLED -- an interesting aspect, since these states can function as recombination centers and may cause non-radiative losses. Moreover, various other effects such as interface dipoles and a slight freeze-out of active electric dopants in the injection layers are observed. In the simulations of the numerous test devices, the parameters are consistently applied. Thereby, the agreement between simulation and experiment is excellent, which demonstrates the correctness and applicability of the developed model. Finally, the complete OLED is successfully simulated on the basis of the parameters that have been obtained in the analysis of the single-carrier devices. The simulation of the OLED illustrates the transport levels of electrons and holes, and proofs that the OLED efficiency is low because of non-radiative recombination in the interlayer between the phosphorescent and fluorescent emission zones. In this context, many interesting issues are discussed, e.g. the applicability of the Langevin model in combination with the mobility models for the description of recombination and the relevance of interactions between free charge carriers and excitons.

Die vorliegende Arbeit beschäftigt sich mit drei Ansätzen der hocheffizienten Erzeugung von weißem Licht mit organischen Leuchtdioden (OLEDs) auf der Basis kleiner Moleküle. Ein Ansatz kombiniert die Emission eines fluoreszenten und zweier phosphoreszenter Emitter in einer einzelnen Emissionsschicht. Da das Triplettniveau des verwendeten Blauemitters niedriger ist als die Triplettniveaus der phosphoreszenten Emitter, werden die Konzentrationen der Emitter so gewählt, dass ein Exzitonenübertrag zwischen ihnen unterbunden wird. Die strahlungslose Rekombination von Tripletts auf dem fluoreszenten Blauemitter begrenzt die Effizienz dieses Ansatzes, jedoch besticht die resultierende weiße OLED durch eine bemerkenswerte Farbstabilität. Der zweite Ansatz basiert auf dem “Triplet Harvesting” Konzept. Ansonsten ungenutzte Triplett Exzitonen werden von einem fluoreszenten Blauemitter auf phosphoreszente Emitter übertragen, wodurch interne Quanteneffizienzen bis zu 100 % möglich sind. Der zur Verfügung stehende Blauemitter 4P-NPD erlaubt aufgrund seines niedrigen Triplettniveaus nicht den Triplett übertrag auf einen grünen Emitter. Daher wird das “Triplet Harvesting” auf zwei unterschiedliche phosphoreszente Emitter, anhand des gelben Emitters Ir(dhfpy)2acac und des roten Emitters Ir(MDQ)2acac untersucht. Es wird gezeigt, dass beide phosphoreszente Emitter indirekt durch Exzitonendiffusion angeregt werden und nicht durch direkte Rekombination von Ladungsträgern auf den Emittermolekülen. Eine genaue Justage der Anregungsverteilung zwischen den phosphoreszenten Emittern ist durch Schichtdickenvariation in der Größenordnung üblicher Schichtdicken möglich. Spätere Produktionsanlagen brauchen daher keinen speziellen Genauigkeitsanforderungen gerecht zu werden. Der dritte und zugleich erfolgreichste Ansatz beruht auf einer Weiterentwicklung des zweiten Ansatzes. Er besteht zunächst darin den Tripletttransfer auf den Übertrag von einem fluoreszenten blauen auf einen phosphoreszenten roten Emitter zu beschränken. Die sich ergebende spektrale Lücke wird durch direktes Prozessieren einer unabhängigen voll phosphoreszenten OLED auf diese erste OLED gefüllt. Verbunden sind beide OLEDs durch eine ladungsträgererzeugende Schicht, in welcher durch das angelegte Feld Elektron/Loch-Paare getrennt werden. Dieser Aufbau entspricht elektrisch der Reihenschaltung zweier OLEDs, welche im Rahmen dieser Arbeit individuell untersucht und optimiert werden. Dabei ergibt sich, dass die Kombination von zwei verschiedenen phosphoreszenten Emittern in einer gemeinsamen Matrix die Ladungsträgerbalance in der Emissionszone sowie die Quanteneffizienz der vollphosphoreszenten OLED stark verbessert. Als Ergebnis steht eine hocheffiziente weiße OLED, welche durch die ausgewogene Emission von vier verschiedenen Emittern farbstabiles Licht mit warm weißen Farbkoordinaten (x, y) = (0.462, 0.429) und ausgezeichneten Farbwiedergabeeigenschaften (CRI = 80.1) erzeugt. Dabei sind die mit diesem Ansatz erreichten Lichtausbeuten (hv = 90.5 lm/W) mit denen von voll phosphoreszenten OLEDs vergleichbar.

Diese Arbeit stellt eine eingehende Studie des sogenannten Vertikalen Organischen Feld-Effekt-Transistors (VOFET) dar, einer neuen Transistor-Geometrie, welche dem stetig wachsenden Bereich der organischen Elektronik entspringt. Dieses neuartige Bauteil hat bereits bewiesen, dass es in der Lage ist, eine der fundamentalen Einschränkungen herkömmlicher organischer Feld-Effekt-Transistoren (OFETs) zu überwinden: Die für Schaltfrequenz und An-Strom wichtige Kanallänge des Transistors kann im VOFET stark reduziert werden, ohne dass teure und komplexe Strukturierungsmethoden genutzt werden müssen. Das genaue Funktionsprinzip des VOFET ist bisher jedoch weitgehend unerforscht. Durch den Vergleich von experimentellen Daten mit Simulationsdaten des erwarteten Bauteil-Verhaltens wird hier ein erstes, grundlegendes Verständnis des VOFETs erarbeitet. Die so gewonnenen Erkenntnisse werden im Folgenden genutzt, um bestimmte Parameter des VOFETs kontrolliert zu manipulieren. So wird beispielsweise gezeigt, dass die Morphologie des organischen Halbleiters, und damit seine Abscheidungsparameter, sowohl für die VOFET-Herstellung als auch für den Ladungsträgertransport im fertigen Bauteil eine wichtige Rolle spielen. Weiterhin wird gezeigt, dass der VOFET, genau wie der konventionelle OFET, durch das Einbringen von Kontaktdotierung deutlich verbessert werden kann. Mit Hilfe dieser Ergebnisse kann gezeigt werden, dass das Funktionsprinzip des VOFETs mit dem eines konventionellen OFETs nahezu identisch ist, wenn man von geringen Abweichungen aufgrund der unterschiedlichen Geometrien absieht. Basierend auf dieser Erkenntnis wird schließlich ein VOFET präsentiert, welcher im Inversionsmodus betrieben werden kann und so die Lücke zur konventionellen MOSFET-Technologie schließt. Dieser Inversions-VOFET stellt folglich einen vielversprechenden Ansatz für leistungsfähige organische Transistoren dar, welche als Grundbausteine für komplexe Elektronikanwendungen auf flexiblen Substraten genutzt werden können. / This work represents a comprehensive study of the so-called vertical organic field-effect transistor (VOFET), a novel transistor geometry originating from the fast-growing field of organic electronics. This device has already demonstrated its potential to overcome one of the fundamental limitations met in conventional organic transistor architectures (OFETs): In the VOFET, it is possible to reduce the channel length and thus increase On-state current and switching frequency without using expensive and complex structuring methods. Yet the VOFET's operational principles are presently not understood in full detail. By simulating the expected device behaviour and correlating it with experimental findings, a basic understanding of the charge transport in VOFETs is established and this knowledge is subsequently applied in order to manipulate certain parameters and materials in the VOFET. In particular, it is found that the morphology, and thus the deposition parameters, of the organic semiconductor play an important role, both for a successful VOFET fabrication and for the charge transport in the finished device. Furthermore, it is shown that VOFETs, just like their conventional counterparts, are greatly improved by the application of contact doping. This result, in turn, is used to demonstrate that the VOFET essentially works in almost exactly the same way as a conventional OFET, with only minor changes due to the altered contact arrangement. Working from this realisation, a vertical organic transistor is developed which operates in the inversion regime, thus closing the gap to conventional MOSFET technology and providing a truly promising candidate for high-performance organic transistors as the building blocks for advanced, flexible electronics applications.

Over the last decades organic light-emitting diodes (OLEDs) and organic solar cells (OSCs) have gained considerable attention as efficient, flexible, lightweight, and potentially low-cost technology for lighting and display applications or as a renewable energy source, respectively. However, achieving long-term stability remains challenging. Revealing and understanding aging processes is therefore of great interest. This work presents fundamental investigations to understand and circumvent organic device degradation. In the first part, single materials used in organic devices were investigated. By tailoring an attenuated total reflection infrared (ATR-IR) spectrometer to the specific needs and subsequent measurements, it is shown that the tris(8-hydroxyquinoline)aluminum (Alq3) molecule, a well known fluorescent green emitter, degrades during air exposure by the formation of carbonyl groups. By using a laser desorption/ionization time of flight mass spectrometer (LDI-TOF-MS) it was shown that a,w-bis-(dicyanovinylen)-sexithiophen (DCV6T-Bu4), a well known small-molecule material which is used as part of the active layer, reacts with oxygen during ultraviolet (UV) irradiation. By using climate boxes and a sun simulator the impact of dry and humid air as well as sunlight on C60, a widely-used acceptor molecule in organic solar cells, was investigated. The breaking of the C60 cage to C58 and C56 and the further reaction of these components with oxygen as well as the dimerization of C58 and C56 molecules were found. The degradation products such as C58O increase with air exposure time but they are independent of the humidity level of the ambient air as well as sunlight irradiation. Subsequent annealing leads to a decrease of the C58O concentration. Many efficient n-dopants are prone to degradation in air, due to the low ionization potentials, thereby limiting the processing conditions. It was found that the air exposure of the highly efficient n-dopant tetrakis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidinato)ditungsten(II) (W2(hpp)4) leads to oxidation reactions of the molecule to [W(hpp)2 + O] and other degradation products. The decay constant of W2(hpp)4 and the matching mean growth time of the [W(hpp)2 + O] degradation as well as a second very quick degradation of the dopant could be determined. The two decay constants can be explained by the assumption that W2(hpp)4 molecules, which are involved in the charge transfer, do degrade slower due to the fact that the charge transfer leads to a downshift of the energy levels of the W2(hpp)4 molecule. Apart from the properties of the organic materials, other effects such as the impact of different purification systems on the material purity as well as the dependence of material purity on the OLED lifetime has been investigated. No correlations between the purification grade and the amount of impurities were found. OLEDs which contain N,N\'-di(naphthalen-1-yl)-N,N\'-diphenyl-benzidine (alpha-NPD) purified in a vertically interlaced stainless steel sublimation systems shows slightly higher external quantum efficiencies compared to tube-based vacuum sublimation systems. The devices which contain alpha-NPD purified by a sublimation system have an extended lifetime. Finally, the impact of residual gases during device fabrication on OLED lifetime and electrical characteristics was investigated. It was found that water vapor introduces an additional series resistance to the OLED, while the other gases do not influence the electric characteristics. The presence of nitrogen or oxygen impacts the lifetime of the OLEDs by the same amount. Nitrogen is non-reactive, this leads to the conclusion that the influence of nitrogen and oxygen on the OLED lifetime is of non-chemical nature, such as changes in the morphology of the organic layers. Water vapor introduces an additional, even faster degradation process within the first hours of OLED operation. As major sources of device degradation, the dimerization of 4,7-diphenyl-1,10-phenanthroline (BPhen) as well as the complexation reaction of alpha-NPD with a bis(1-phenylisoquinoline)iridium(III) (Ir(piq)2) fragment was identified.