Single self-assembled semiconductor quantum dots (QDs) are able to emit single-photons and entangled-photons pairs. They are therefore considered as potential candidate building blocks for quantum information processing (QIP) and communication. To exploit them fully, the ability to precisely control their optical properties is needed due to several reasons. For example, the stochastic nature of their growth ends up with only little probability of finding any two or more QDs emitting indistinguishable photons. These are required for two-photon quantum interference (partial Bell-state measurement), which lies at the heart of linear optics QIP. Also, most of the as-grown QDs do not fulfil the symmetries required for generation of entangled-photon pairs. Additionally, tuning is required to establish completely new systems, for example, 87Rb atomic-vapors based hybrid semiconductoratomic (HSA) interface or QDs with significant heavy-hole (HH)-light-hole (LH) mixings. The former paves a way towards quantum memories and the latter makes the optical control of hole spins much easier required for spin- based QIP. This work focuses on the optical properties of a new type of QDs optimized for HSA experiments and their broadband tuning using strain. It was created by integrating the membranes, containing QDs, onto relaxor-ferroelectric actuators and was quantified with a spatial resolution of ~1 µm by combining measurements of the µ-photoluminescence of the regions surrounding the QDs and dedicated modeling. The emission of a neutral exciton confined in a QD usually consists of two fine-structure-split lines which are linearly polarized along orthogonal directions. In our QDs we tune the emission energies as large as ~23meV and the fine-structure-splitting by more than 90 µeV. For the first time, we demonstrate that strain is able to tune the angle between the polarization direction of these two lines up to 40° due to increased strain-induced HH-LH mixings up to ~55%. Compared to other quantum emitters, QDs can be easily integrated into optoelectronic devices, which enable, for example, the generation of non-classical light under electrical injection. A novel method to create sub-micrometer sized current-channels to efficiently feed charge carriers into single QDs is presented in this thesis. It is based on focused-laserbeam assisted thermal diffusion of manganese interstitial ions from the top GaMnAs layer into the underlying layer of resonant tunneling diode structures. The combination of the two methods investigated in this thesis may lead to new QDbased devices, where direct laser writing is employed to preselect QDs by creating localized current-channels and strain is used to fine tune their optical properties to match the demanding requirements imposed by QIP concepts.

Single self-assembled semiconductor quantum dots (QDs) are able to emit single-photons and entangled-photons pairs. They are therefore considered as potential candidate building blocks for quantum information processing (QIP) and communication. To exploit them fully, the ability to precisely control their optical properties is needed due to several reasons. For example, the stochastic nature of their growth ends up with only little probability of finding any two or more QDs emitting indistinguishable photons. These are required for two-photon quantum interference (partial Bell-state measurement), which lies at the heart of linear optics QIP. Also, most of the as-grown QDs do not fulfil the symmetries required for generation of entangled-photon pairs. Additionally, tuning is required to establish completely new systems, for example, 87Rb atomic-vapors based hybrid semiconductoratomic (HSA) interface or QDs with significant heavy-hole (HH)-light-hole (LH) mixings. The former paves a way towards quantum memories and the latter makes the optical control of hole spins much easier required for spin- based QIP. This work focuses on the optical properties of a new type of QDs optimized for HSA experiments and their broadband tuning using strain. It was created by integrating the membranes, containing QDs, onto relaxor-ferroelectric actuators and was quantified with a spatial resolution of ~1 µm by combining measurements of the µ-photoluminescence of the regions surrounding the QDs and dedicated modeling. The emission of a neutral exciton confined in a QD usually consists of two fine-structure-split lines which are linearly polarized along orthogonal directions. In our QDs we tune the emission energies as large as ~23meV and the fine-structure-splitting by more than 90 µeV. For the first time, we demonstrate that strain is able to tune the angle between the polarization direction of these two lines up to 40° due to increased strain-induced HH-LH mixings up to ~55%. Compared to other quantum emitters, QDs can be easily integrated into optoelectronic devices, which enable, for example, the generation of non-classical light under electrical injection. A novel method to create sub-micrometer sized current-channels to efficiently feed charge carriers into single QDs is presented in this thesis. It is based on focused-laserbeam assisted thermal diffusion of manganese interstitial ions from the top GaMnAs layer into the underlying layer of resonant tunneling diode structures. The combination of the two methods investigated in this thesis may lead to new QDbased devices, where direct laser writing is employed to preselect QDs by creating localized current-channels and strain is used to fine tune their optical properties to match the demanding requirements imposed by QIP concepts.

Kamouflagenät är ett viktigt verktyg inom försvarsindustrin där det används för att maskera eller dölja objekt från att bli visuellt upptäckta. Kamouflagenät är utformade för att efterlikna den omgivande miljön eller terräng som den appliceras vid. Traditionellt tillverkas kamouflagesystemen genom virkningsstekniken bi-axial varptrikå med två system inslagstrådar i 0° respektive 90°. För produktutvecklingens syfte att tillverka ett lätt kamouflagenät med lämpliga hållfasthetsegenskaper, undersöks tekniken multi-axial varptrikå med fyra system inslagstrådar i 0°, 90° och ±45°. Genom semi-strukturerade intervjuer med experter inom bi- och multi-axial varptrikå samlas det in information och fakta om multi-axial teknik. Detta fungerar som en grund för att avgöra om det är en möjlig teknik för den befintliga produkten. En teoretisk modellering utförs sedan för att undersöka, förutsäga samt jämföra beteenden och egenskaper hos de bi- och multi-axiella strukturerna. De semi-strukturerade intervjuerna resulterade i en omfattande och informativ faktainsamling om multi-axial teknik. Det inhämtades underlag gällande hur tillämpbar den multi-axiella tekniken är för kamouflagenät, samt information om maskinens begränsningar och trådorientering. Den teoretiska modelleringen innebär tillämpning av kända matematiska och fysikaliska begrepp, modelleringen lägger således en grund för att förstå mekaniska beteenden hos bi -och multi-axiella strukturer då de utsätts för små deformationer. Den teoretiska modelleringen resulterade i värden som beskriver styvheten hos de båda strukturerna vid deformationer på =0,01 i fyra riktningar. Kunskapen om lämpliga styvhetsegenskaper för kamouflagenät i kombination med resultatet från den teoretiska modelleringen lade en grund för att dra slutsatser om ifall multi-axiella strukturer, som är lika lätta som motsvarande bi-axiella strukturer vilka idag används i kamouflagenät, är lämpliga för att användas i kamouflagenät. Resultaten från modelleringen visar att de multi-axiella strukturerna i nästan samtliga fall har lägre elasticitetsmodul än deras motsvarande bi-axiella strukturer, detta innebär att det inte krävs lika stor kraft för att deformera de multi-axiella strukturerna. Modelleringen visar även att de båda strukturerna besitter olika egenskaper i olika riktningar, där de multi-axiella strukturerna beter sig likadant i alla fyra riktningar, till skillnad från de bi-axiella strukturerna som inte gör det. Enligt resultatet beror styvheten för de båda strukturerna på ett antal olika faktorer; trådtäthet, garnnummer och effektiv bredd, vilka appliceras som variabler i den teoretiska modelleringen. Modelleringen resulterade alltså därmed både till en förståelse för vilka faktorer som bidrar till skillnader i styvheten, och hur styvheten förhåller sig hos de båda strukturerna i olika riktningar. Studien visar att det i praktiken finns goda möjligheter för tillverkning av kamouflagenät i multi-axial varptrikå och att de multi-axiella strukturerna både kan göra kamouflagenäten mindre styva och bidra till isotropiska egenskaper. / Camouflage net is an essential device in the arms industry, where it is utilized to camouflage and hide objects from being visually detected. The camouflage net is designed to imitate the surrounding environment or terrain in which it is being applied. Traditionally, camouflage systems are manufactured using a knitting technique called bi-axial warp knitting with two systems of inlay yarns in 0° and 90° angles relative to the fabrics warp direction. To enhance the current product and produce light camouflage net with suitable strength properties, the multi-axial warp knitting technique with four systems of inlay yarns at 0°, 90° and ±45° angles is investigated. By utilizing semi-structured interviews with experts in the area of bi- and multi-axial warp knitting, can information and facts about multi-axial be collected and be used as a basis for concluding whether multi-axial is a suitable technique for the existing product. A theoretical modeling is then performed to examine, predict and compare the behaviors and properties of the bi- and multi-axial structures. The semi-structured interviews resulted in a comprehensive and informative collection of data about multi-axial technique. It also gathered information about the suitability and application of the technique to camouflage nets, as well as information regarding the machine’s limitations and thread orientation. The theoretical modeling involves the application of known mathematical and physical concepts, thus providing a foundation for understanding the mechanical behavior of bi- and multi-axial structures under small deformations. The theoretical modeling resulted in values that describe the stiffness of both structures at deformations of =0,01 in four directions. The knowledge of appropriate stiffness properties for camouflage nets, combined with the results from the theoretical modeling, laid the groundwork for drawing conclusions about the suitability of using multi-axial structures, which are as lightweight as the corresponding bi-axial structures currently used in camouflage nets. The modeling results show that the multi-axial structures generally have a lower initial modulus than their corresponding bi-axial structures, indicating that less force is required to deform the multi-axial structures. The modeling also reveals that the two structures exhibit different properties in different directions, with the multi-axial structures behaving similarly in all four directions, unlike the bi-axial structures. According to the results, the stiffness of both structures depends on several factors: thread density, yarn count, and effective width, which are applied as variables in the theoretical modeling. Thus, the modeling provides an understanding of the factors contributing to differences in stiffness and how the stiffness varies between the two structures in different directions. The study demonstrates that there are promising opportunities for manufacturing camouflage nets using multi-axial warp knit fabric in practice, and that the multi-axial structures can both reduce the stiffness of camouflage nets and contribute to isotropic properties.