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International Telemetering Conference Proceedings / October 18-21, 2004 / Town & Country Resort, San Diego, California / Increasing gate counts in FPGA’s create an option of offering multiple waveform demodulation and modulation within a single transponder transceiver. Differing data rates, channel schemes, and network protocols can be addressed with the flexibility of software-based demodulation and modulation. Increased satellite longevity and reliability are benefits of software-based transceiver design. Newer packaging technology offers additional capability in reducing form factor and weight of a transponder. A review of the challenges in combining each of the above to produce the next generation of transponders is the subject of this paper.

Taiwan¡¦s IC foundry has truly emerged as important roles in Taiwan¡¦s electronic industries, whose fast growth has successfully been in the construction of Taiwan¡¦s economic miracle. Through the differentiation strategy, TSMC, the largest and most successful dedicated IC foundry in the world, expands and develops its business from bottom to top. It also has well driven IC industries a Cluster Effect, prosperously fostering the industries in its supply chain, from IC design and manufacturing to packaging and testing, even rapid growth of Taiwan¡¦s personal computer and peripheral industries relatively. Long-term, increasing growth for IC industries had earned many companies to invest low entry barrier factories - IC packaging that needs lower technical expertise and less capital. However, against semiconductor industrial booming and bust cycles, and the phenomenon known as the Bullwhip Effect in supply chains, most packaging factories have been confronting with the challenges in worse and more competitive environments. Those factories, even the same for the new entrants, actively adopted all different types of competitive, cooperative and integrated strategies, not only for profits but survival. In this study, based on path dependence theory, the competitive strategies among ten new IC packaging companies were introduced to discuss, examine, and more further verify the linkages between their competitive strategies and developing paths. The conclusion indicates that competitive strategies of positive developing path may offer new entrants a successful, experienced model to copy with. 1.The advancement of Taiwan IC packaging new entrants gave evidence for developing path¡¦s model. That is to say, different competitive strategies will result in different developing paths. 2.The competitive strategies of the positively developing path¡¦s model are helpful for new entrants to develop positively. Strategic positioning helps to concentrate company¡¦s resources onto her beneficial path to develop. Innovative strategies will help to break through the limitations of path and guide the developing path to success. Competitive advantage helps the developing path come into positive cycles. 3.IC packaging companies have to review and react very often to manage their competitive strategies when the developing path is influenced by the variances of inner and outer environments.

We focused on a non-cooling room temperature microbolometer infrared imaging array device which includes a sensing layer of p-type a-Si:H component layers doped with boron. Boron incorporation and bonding configuration were investigated for a-Si:H films grown by plasma enhanced chemical deposition (PECVD) at varying substrate temperatures, hydrogen dilution of the silane precursor, and dopant to silane ratio using multiple internal reflection infrared spectroscopy (MIR-IR). This study was then confirmed from collaborators via Raman spectroscopy. MIR-IR analyses reveal an interesting counter-balance relationship between boron-doping and hydrogen-dilution growth parameters in PECVD-grown a-Si:H. Specifically, an increase in the hydrogen dilution ratio (H2/SiH4) or substrate temperature was found to increase organization of the silicon lattice in the amorphous films. It resulted in the decrease of the most stable SiH bonding configuration and thus decrease the organization of the film. The new chemical bonding information of a-Si:H thin film was correlated with the various boron doping mechanisms proposed by theoretical calculations. The study revealed the corrosion morphology progression on aluminum alloy (Al, 0.5% Cu) under acidic chloride solution. This is due to defects and a higher copper content at the grain boundary. Direct galvanic current measurement, linear sweep voltammetry (LSV), and Tafel plots are used to measure corrosion current and potential. Hydrogen gas evolution was also observed (for the first time) in Cu/Al bimetallic interface in areas of active corrosion. Mechanistic insight that leads to effective prevention of aluminum bond pad corrosion is explored and discussed. (Chapter 4) Aluminum bond pad corrosion activity and mechanistic insight at a Cu/Al bimetallic interface typically used in microelectronic packages for automotive applications were investigated by means of optical and scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and electrochemistry. Screening of corrosion variables (temperature, moisture, chloride ion concentration, pH) have been investigated to find their effect on corrosion rate and to better understand the Al/Cu bimetallic corrosion mechanism. The study revealed the corrosion morphology progression on aluminum alloy (Al, 0.5% Cu) under acidic chloride solution. The corrosion starts as surface roughening which evolves into a dendrite structure and later continues to grow into a mud-crack type corrosion. SEM showed the early stage of corrosion with dendritic formation usually occurs at the grain boundary. This is due to defects and a higher copper content at the grain boundary. The impact of copper bimetallic contact on aluminum corrosion was explored by sputtering copper microdots on aluminum substrate. Copper micropattern screening revealed that the corrosion is activated on the Al/Cu interface area and driven by the large potential difference; it was also seen to proceed at much higher rates than those observed with bare aluminum. Direct galvanic current measurement, linear sweep voltammetry (LSV), and Tafel plots are used to measure corrosion current and potential. Hydrogen gas evolution was also observed (for the first time) in Cu/Al bimetallic interface in areas of active corrosion. Mechanistic insight that leads to effective prevention of aluminum bond pad corrosion is explored and discussed. Micropattern corrosion screening identified hydrogen evolution and bimetallic interface as the root cause of Al pad corrosion that leads to Cu ball lift-off, a fatal defect, in Cu wire bonded device. Complete corrosion inhibition can be achieved by strategically disabling the mutually coupled cathodic and anodic reaction cycles.