Arundhati Roy¡¦s first novel The God of Small Things focuses on the incessant confrontation permeating in divergent layers of the Indian society. With the prevalence of the caste system, which stabilizes the society by eliminating individuals¡¦ social mobility, Roy reveals that the essential conflicts individuals face in their daily interactions are repressed by their social consciousness and accordingly distort their subjectivities. ¡§Love Laws,¡¨ an oxymoronic term that Roy intriguingly combines, points out the generally-believed opposing position of love and laws but simultaneously reveals their interrelated relationship that blurs their division. Based on ¡§Love Laws,¡¨ body serves as another battlefield for the social norms and individuality to compete against each other. Individual bodies are trapped between their desire for bodily contacts and their inscription of various social codes. Such confrontation even subtly seeps into individuals¡¦ daily lives through visual, olfactory and tactile senses and provides them with numerous ways to sense their unquenched desire in the severely guarded society. The natural environment, vulnerable to human abuses, is also encoded with ¡§Love Laws.¡¨ The monsoon and the river, closely related to the prosperity of the Indian people, bear human beings¡¦ love, fear, and impulses to control. In human beings¡¦ pursuit of happiness, the Nature ¡§witnesses¡¨ and suffers their brutality that leads to the destruction of both the Nature and human beings. Thus, ecology functions as a broader scope to demonstrate the power of ¡§Love Laws¡¨ and expresses Roy¡¦s utmost concern for human beings¡¦ unruly abuse of the Nature. In The God of Small Things, it is through the discussion of ¡§Love Laws,¡¨ body and ecology that Roy presents the incessant confrontation in human nature. Instead of being pessimistic about such confrontation, Roy transmits the message that only by celebrating individuals¡¦ love that transcends laws, only by paying homage to their bodies that perform their subjectivities as well as their positive relationship that bridges the gap with nature, can the ever-lasting conflicts within human nature be ceased and a new prospect of a better tomorrow will emerge.

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The purpose of this thesis is to develop and demonstrate a physically based rigid body simulation with a focus on simplifications to achieve real-time performance. This thesis aims to demonstrate that by improving the efficiency with simplified calculations of possible bottlenecks of a real-time rigid body simulation, the accuracy can be improved. A prototype simulation framework is implemented to evaluate the simplifications. Finally, various real-time rendering features are implemented to achieve a realistic look, and also to imitate the game-like environment where real-time rigid body simulations are mostly utilized. A series of demonstration experiments are used to show that our simulator does, in fact, achieve real-time performance, while maintaining satisfactory accuracy. A direct comparison of this prototype with a commercially available simulator verifies that the simplified approach improves the efficiency and does not damage the accuracy under our test conditions. Integration of rendering elements like advanced shading, shadowing, depth of field and motion blur into our real-time framework also enhanced the perception of simulation outcomes.

In this thesis, according to the development of the vertical MOSFETs, we propose several MOSFETs that possess vertical channels, double gates, and buried oxide to solve the defects of the applications in switch devices, CMOS technique, and power devices. The vertical sidewall MOSFETs has many advantages, such as the packing density improvement, multiple channels, and independence on the critical lithography. Based on these characteristics, three kinds MOSFETs are now proposed. The first one is the vertical SOI MOSFET with smart source/ body contact (SSBVMOS). It is proposed to solve the floating body effect and self-heating effect. SSBVMOS provides a body-tie that does not occupy the excessive wafer area. It uses the smart source/body-tie to eliminate the unnecessary carriers and to provide an effective heat pass way. In addition, SSBVMOS is discussed with respect to the channel length and the buried oxide thickness adjustments, and also compared with the conventional vertical sidewall MOSFETs. The second one is the vertical MOSFET with upper and internal l-shape buried oxide (ULVMOS). ULVMOS uses the buried oxide to decrease the junction leakage. The ULVMOS also operates under the fully depleted regime to provide good characteristics. The last one is the novel embedded vertical sidewall MOSFETs (EGVMOS). EGVMOS maintains the advantages of the vertical structures and reduces the fabrication difficulty. It is also expected to decrease the overlap capacitance issue which affects the AC performance in the vertical sidewall MOSFET. As semiconductor channel length scaled down, the proposed devices is proved to provide effective applications for achieving good subthreshold swing, high on-off current ratio, and low DIBL through ISE-TCAD software simulation and real fabrication.

Thesis (Ph. D.)--University of Missouri-Columbia, 1998. / Typescript. Vita. Includes bibliographical references (leaves 45-48). Also available on the Internet.

Thesis--PlanB (M.S.)--University of Wisconsin--Stout, 2001. / Includes bibliographical references.

Thesis (Ph. D.)--University of Chicago, The Divinity School, 2001. / Includes bibliographical references. Also available on the Internet.

Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (p. 128-137).

Thesis (M.P.H.)--University of Hong Kong, 2009. / Includes bibliographical references (p. 63-67).

Thesis (M.S.)--Brigham Young University. Dept. of Physical Education, 2004. / Includes bibliographical references.