Nesse trabalho de mestrado estudou-se o comportamento elétrico de transistores verticais de múltiplas portas (3D) sobre isolante (SOI FinFET) sob o efeito da radiação de prótons em baixa temperatura, por meio de métodos experimentais e simulações numéricas. Inicialmente, foram comparados os comportamentos dos transistores antes e depois de serem submetidos à radiação de prótons, em temperatura ambiente. Esta análise foi realizada tanto para dispositivos com canal do tipo p quanto do tipo n, estudando-se tanto como as características analógicas são alteradas após o dispositivo ser irradiado por prótons com uma energia de aproximadamente 60 MeV quanto as características digitais. Estudou-se os efeitos da dose total ionizante (TID) nos dispositivos SOI FinFETs. Estes efeitos se manifestam de formas diferentes, muitas vezes opostas, para transistores nMOS e pMOS. Os efeitos da radiação na inclinação de sublimiar (SS) dos pFinFETs, por exemplo, resultaram em uma melhoria da velocidade de chaveamento, enquanto que os nFinFET sofreram uma degradação. Já a variação negativa da tensão de limiar (VT), uma vez que a maior parte das cargas acumuladas no óxido são positivas, deixa os transistores pMOS mais imunes a corrente parasitária da segunda interface, e novamente degrada as características dos nMOS. Os transistores com aletas mais largas têm uma maior área de óxido enterrado abaixo do filme de silício, o que resulta em um maior acúmulo de cargas. Portanto, a degradação dos parâmetros foi mais acentuada do que em dispositivos com aletas mais estreitas. Transistores com canal curto estão sujeitos aos efeitos de canal curto e se mostraram mais suscetíveis à radiação de próton na região de sublimiar. Além da análise dos parâmetros básicos, realizou-se uma análise de compromisso entre três parâmetros analógicos: a eficiência do transistor (gm/ID), a frequência de ganho unitário (fT) e o ganho intrínseco de tensão (AV). Eles foram estudados em função do coeficiente de inversão (IC), sendo possível verificar o comportamento dos dispositivos em cada regime de inversão e, posteriormente, o melhor compromisso entre os parâmetros, para uma dada aplicação. Em baixas temperaturas foi também observado que enquanto para os parâmetros digitais, os transistores de canal p mostraram um melhor desempenho quando focando os parâmetros digitais (tensão de limiar e inclinação de sublimiar), nFinFETs mostraram-se mais imunes a radiação de prótons em baixa temperatura, quando analisados os parâmetros analógicos como o ganho intrínseco de tensão (resposta mais estável à radiação em baixas temperaturas). / This master degree\'s dissertation aims to study the low temperature electrical behavior of tridimensional transistors on insulator (SOI FinFET) under the effects of proton radiation, through experimental methods and numeric simulations. Initially, it was compared the transistors\' behavior before and after they have been subjected to proton radiation, at room temperature. This analysis was performed for both p- and n-channel devices, studying how the analog parameters change after the devices are irradiated by protons with approximately 60 MeV energy. The effects of total ionization dose on SOI FinFET devices were studied. These effects are manifested in different, very often opposing ways for nMOS and pMOS transistors. The radiation effects on the subthreshold slope (SS) in pFinFETs, for example, resulted in a switching speed improvement, while the nFinFETs were degraded. Also, the negative shift in the threshold voltage (VT), as most of the oxide trapped charges are positive, made the pMOS transistors more immune to the parasitic current at the second interface, and, again, the nMOS ones had their characteristics degraded. The wide-fin transistors have a bigger oxide area beneath the silicon film, which results in a greater charge buildup. Hence, the parameter degradation was more substantial than for narrow-fin devices. Short-channel transistors are subject to short-channel effects and showed themselves more susceptible to proton irradiation at the subthreshold region. In addition to the basic parameter analysis, it was done a tradeoff analysis between three analog parameters: the transistor efficiency (gm/ID), the unit gain frequency (fT) and the intrinsic voltage gain (AV). They have been studied as a function of the inversion coefficient (IC), where it was possible to observe the devices\' behavior for each inversion regime and, after, the best tradeoff between the parameters, for a given application. At low temperature, it was also observed that while pFinFETs have a better performance when looking at digital parameters VTH and SS after irradiation, nFinFETs showed more immunity to proton radiation when analyzed from their analog parameter with a more stable response to low temperatures.

The finite lifetime of the bound roton pair is included in the theoretical light scattering cross section to explain the shape of the peak in the observed Raman light scattering cross section in He II. A model Hamiltonian is used to describe interactions between quasiparticles for the helium system. The equation of motion for the bound roton pair state, which is taken to be a collective mode of quasiparticle pairs, is solved. The cross section for light scattering is then derived using Fermi's Golden Rule with the bound roton pair as the final state. Since the bound roton pair can decay into two free phonons, a phenomenological width r is included in the cross section. The peak position and shape of the observed cross section are both fitted using a binding energy of εB = 0.37 K for the bound roton pair.

O mecanismo e cinética da oxidação de etanol sobre níquel em soluções de hidróxido de sódio em condições experimentais bem definidas, que incluíram a variação da concentração do etanol, potencial final da varredura anódica, temperatura da solução (tanto na temperatura de 25 °C quanto da ordem de -15 °C), e variação da velocidade de varredura, são discutidos em termos da formação de óxidos de níquel de valência superior. Na primeira parte deste estudo foi utilizado voltametria cíclica e foram encontradas evidências para um processo de intermediação envolvendo a molécula do etanol e as espécies β-NiOOH formadas sobre a superfície do eletrodo em E ≥ 1,3 V vs. ERH. Em baixas concentrações de etanol (≤ 0,2 mol L-1) a etapa determinante da velocidade da reação é governada por um processo de difusão. Em concentrações mais altas (> 0,2 mol L-1) esta reação passou a ser governada por um processo de transferência de carga entre a molécula do etanol e as espécies Ni3+. O aumento da concentração deslocou o potencial do pico da oxidação do etanol para potenciais mais positivos. A diminuição da temperatura afetou a cinética desta reação, diminuindo a j e provocando um deslocamento do potencial de início da oxidação do etanol para potenciais mais positivos. Foi possível observar a partir das características dos perfis voltamétricos, que mesmo em temperatura de -15 °C a reação de eletro-oxidação do etanol continuou prosseguindo. No potencial de início da reação de oxidação do etanol, o valor de Ea encontrado mostrou ser característico de uma reação controlada por um processo de difusão, enquanto que o valor de Ea obtido no potencial de pico foi típico de uma reação controlada por um processo de transferência de carga. A j da oxidação do etanol não é afetada pela velocidade de varredura do potencial. Por outro lado, a velocidade de varredura do potencial tem uma influência considerável sobre as características voltamétricas referentes à formação e redução do β-NiOOH. Na segunda etapa foram realizadas análises de FTIRS in situ, os resultados mostraram que a oxidação do etanol sobre níquel converte de forma seletiva este álcool ao seu ácido carboxílico correspondente (ácido acético). / The mechanism and kinetic of the ethanol oxidation on nickel in sodium hydroxide solutions under experimental conditions well controlled that included the variation of ethanol concentration, last potential of the anodic scan, temperature of the solution, and variation of scan rate, are discussed in terms of the formation of higher valence nickel oxides. The first step of this study was performed using cyclic voltammetry and showed evidences of a mediation process involving the ethanol molecule and β-NiOOH species formed on the electrode surface at E ≥ 1,3 V vs. ERH. At low ethanol concentrations (≤ 0,2 mol L-1) the rate-determining step of the reaction is governed by a diffusion process. At higher concentrations (> 0,2 mol L-1) this reaction passed to be governed by a charge transference process between the ethanol molecule and Ni3+ species. The increase of the ethanol concentration shifted the peak potential of the oxidation of ethanol to potentials more positives. The decrease of temperature affected the kinetic of this reaction, decreasing the j and causing a shifted of the onset potential of the ethanol oxidation to potentials more positives. It was possible to observe from the CV features, which even under temperature of -15 °C, the reaction of electro-oxidation of ethanol continued pursuing. At the onset potential of the ethanol oxidation reaction, the value of Ea found showing to be characteristic of a reaction controlled by a diffusion process, while the value of Ea obtained at the peak potential was typical of a reaction controlled by a charge transference process. The j of the ethanol oxidation was not affected by potential scan rate. In the other hand, the potential scan rate has an influence considerable on the CV features associated to the processes of β-NiOOH formation and reduction. In the second step, analysis in situ FTIRS were performed, which showed that this alcohol was converted of selective form to the correspond carboxylic acid (acetic acid).

Nesse trabalho de mestrado estudou-se o comportamento elétrico de transistores verticais de múltiplas portas (3D) sobre isolante (SOI FinFET) sob o efeito da radiação de prótons em baixa temperatura, por meio de métodos experimentais e simulações numéricas. Inicialmente, foram comparados os comportamentos dos transistores antes e depois de serem submetidos à radiação de prótons, em temperatura ambiente. Esta análise foi realizada tanto para dispositivos com canal do tipo p quanto do tipo n, estudando-se tanto como as características analógicas são alteradas após o dispositivo ser irradiado por prótons com uma energia de aproximadamente 60 MeV quanto as características digitais. Estudou-se os efeitos da dose total ionizante (TID) nos dispositivos SOI FinFETs. Estes efeitos se manifestam de formas diferentes, muitas vezes opostas, para transistores nMOS e pMOS. Os efeitos da radiação na inclinação de sublimiar (SS) dos pFinFETs, por exemplo, resultaram em uma melhoria da velocidade de chaveamento, enquanto que os nFinFET sofreram uma degradação. Já a variação negativa da tensão de limiar (VT), uma vez que a maior parte das cargas acumuladas no óxido são positivas, deixa os transistores pMOS mais imunes a corrente parasitária da segunda interface, e novamente degrada as características dos nMOS. Os transistores com aletas mais largas têm uma maior área de óxido enterrado abaixo do filme de silício, o que resulta em um maior acúmulo de cargas. Portanto, a degradação dos parâmetros foi mais acentuada do que em dispositivos com aletas mais estreitas. Transistores com canal curto estão sujeitos aos efeitos de canal curto e se mostraram mais suscetíveis à radiação de próton na região de sublimiar. Além da análise dos parâmetros básicos, realizou-se uma análise de compromisso entre três parâmetros analógicos: a eficiência do transistor (gm/ID), a frequência de ganho unitário (fT) e o ganho intrínseco de tensão (AV). Eles foram estudados em função do coeficiente de inversão (IC), sendo possível verificar o comportamento dos dispositivos em cada regime de inversão e, posteriormente, o melhor compromisso entre os parâmetros, para uma dada aplicação. Em baixas temperaturas foi também observado que enquanto para os parâmetros digitais, os transistores de canal p mostraram um melhor desempenho quando focando os parâmetros digitais (tensão de limiar e inclinação de sublimiar), nFinFETs mostraram-se mais imunes a radiação de prótons em baixa temperatura, quando analisados os parâmetros analógicos como o ganho intrínseco de tensão (resposta mais estável à radiação em baixas temperaturas). / This master degree\'s dissertation aims to study the low temperature electrical behavior of tridimensional transistors on insulator (SOI FinFET) under the effects of proton radiation, through experimental methods and numeric simulations. Initially, it was compared the transistors\' behavior before and after they have been subjected to proton radiation, at room temperature. This analysis was performed for both p- and n-channel devices, studying how the analog parameters change after the devices are irradiated by protons with approximately 60 MeV energy. The effects of total ionization dose on SOI FinFET devices were studied. These effects are manifested in different, very often opposing ways for nMOS and pMOS transistors. The radiation effects on the subthreshold slope (SS) in pFinFETs, for example, resulted in a switching speed improvement, while the nFinFETs were degraded. Also, the negative shift in the threshold voltage (VT), as most of the oxide trapped charges are positive, made the pMOS transistors more immune to the parasitic current at the second interface, and, again, the nMOS ones had their characteristics degraded. The wide-fin transistors have a bigger oxide area beneath the silicon film, which results in a greater charge buildup. Hence, the parameter degradation was more substantial than for narrow-fin devices. Short-channel transistors are subject to short-channel effects and showed themselves more susceptible to proton irradiation at the subthreshold region. In addition to the basic parameter analysis, it was done a tradeoff analysis between three analog parameters: the transistor efficiency (gm/ID), the unit gain frequency (fT) and the intrinsic voltage gain (AV). They have been studied as a function of the inversion coefficient (IC), where it was possible to observe the devices\' behavior for each inversion regime and, after, the best tradeoff between the parameters, for a given application. At low temperature, it was also observed that while pFinFETs have a better performance when looking at digital parameters VTH and SS after irradiation, nFinFETs showed more immunity to proton radiation when analyzed from their analog parameter with a more stable response to low temperatures.

Whilst biodiesel has many advantages as a renewable-energy fuel and as a substitute source of petroleum diesel, it suffers from poor performance at both low temperatures and high pressures. Not only does biodiesel crystallise at low temperatures below ~0 °C, but it also crystallises under the high pressures experienced in common-rail and injector systems within diesel engines. Crystalline solids induced by temperature and pressure can clog filters and injectors in the diesel engine, thereby causing engine failure. This thesis focuses on developing an enhanced understanding of the behaviour of biodiesel using a range of spectroscopy and diffraction techniques. The crystallisation behaviour of biodiesel at high pressure (0.1 GPa to 4 GPa) or low temperature (0 °C to -40 °C) was studied in this work. Structural phase transitions of the components of biodiesel induced by both temperature and pressure were observed. On account of the complex nature of biodiesel, it proved difficult to characterise these changes in biodiesel itself. Instead, one of the main components, methyl stearate, was therefore investigated. The crystallisation behaviour of methyl stearate is temperature-sensitive. A new polymorph of form II was successfully characterised by single crystal diffraction - by growing crystals from a saturated carbon disulfide solution at room temperature while data collection was conducted at 120 K. Form III was obtained by crystallisation from melt followed by slow cooling. Structural characterisation using single crystal diffraction showed disordered packing behaviour of the molecules in this form. The crystal structure of form IV was obtained using a combination of synchrotron X-ray powder diffraction and high resolution neutron powder diffraction. It was crystallised from the melt by quench cooling at low temperature. The thermal expansion behaviour of this form was also investigated in this work. Furthermore, a phase transition from form IV to form V was observed in neutron diffraction experiments for a fully deuterated sample, but no evidence for this transition was observed in X-ray diffraction studies. Due to the complexity of methyl stearate and the limitations of the experimental data, the crystal structure of form V was not solved. In addition to the temperature studies, the crystallisation behaviour of methyl stearate under variable pressure conditions was investigated in this work. A diamond-anvil cell was employed to generate high-pressure environments. Synchrotron high-pressure X-ray powder diffraction and Raman spectroscopy showed that pressures of as little as 0.1 GPa can induce form IV of methyl stearate to convert to form II. Four phase transitions in the pressure range of 0.1 GPa to 6.3 GPa were also observed. The phase behaviour of methyl stearate induced by pressure is reversible and form II was recovered when the pressure was released. The structure of these high-pressure phases of methyl stearate have still to be determined. High-pressure neutron powder diffraction experiments have also been conducted with form IV of methyl stearate using a Paris-Edinburgh Press. Fluorinert (FC-87) was employed as pressure-transmitting medium to generate hydrostatic condition. No evidence of a phase transition was observed in the pressure range up to 3.31 GPa.

<p>Sposobnost insekata da se prilagode različitim ekolo&scaron;kim uslovima je veoma dobro<br />dokumentovana; oni predstavljaju najrasprostranjeniju grupu životinja na planeti, sa vrstama koje naseljavaju različita kopnena i vodena stani&scaron;ta, od tropskih predela do polova. Razumevanje mehanizama koji omogućavaju insektima da prežive ekstremne temperature i zadrže vitalne funkcije tokom dugog perioda dormancije je kao model sistem od interesa za mnoge naučne oblasti. Na osnovu načina na koji preživljavaju temperature ispod 0&ordm;C insekte možemo podeliti u tri grupe:<em> i)</em> insekti koji toleri&scaron;u formiranje leda u ekstraćelijskom prostoru,<em>ii)</em> insekti koji ne toleri&scaron;u zamrzavanje i moraju da ga izbegnu,&nbsp; a to&nbsp; čine superhlađenjem svojih telesnih tečnosti i<em>&nbsp; iii) </em>insekti koji preživljavaju zahvaljujući gubitku vode kroz permeabilnu kutikulu, &scaron;to je nazvano krioprotektivna dehidratacija. Zajednička odlika organizama sa različitim mehanizmima adaptacije na niske temperature je setbiohemijskih jedinjenja&nbsp; čija se fiziolo&scaron;ka funkcija razlikuje u zavisnosti da li organizam pripada grupi koja toleri&scaron;e ili ne toleri&scaron;e zamrzavanje. To su nukleatori kristalizacije leda, krio/anhidroprotektanti i antifriz proteini.<br />Cilj ovih istraživanja je bio ispitivanje molekularne osnove otpornosti na niske temperature dve vrste polarnih kolembola&nbsp;<em> Onychiurus arcticus </em>i <em>Cryptopygus</em> <em>antarcticus </em>kombinujući fiziolo&scaron;ki, biohemijski i molekularno biolo&scaron;ki pristup. Ispitivane vrste izbegavaju zamrzavanje svojih telesnih tečnosti primenjujući različite strategije preživljavanja. Za antarktičku vrstu&nbsp;<em> C. antarcticus </em>karakteristična je brza promena tačke superhlađenja, kao i njena bimodalna distribucija tokom leta, kada neke jedinke mrznu na&nbsp; vi&scaron;im temperaturama (manje otporne na hladnoću), a druga na nižim (otpornije na hladnoću). Ova bimodalna distribucija tačke superhlađenja je dobro dokumentovana, ali slabo razja&scaron;njena na molekularnom nivou. Druga, arktička vrsta<em>&nbsp; O. arcticus&nbsp;</em> koristi strategiju preživljavanja zimskih temperature koje idu i do -25&ordm;C nazvanu krioprotektivna dehidratacija. Na ovaj način, količina slobodne vode u telu se značajno redukuje, a akumulira se trehaloza koja deluje kao&nbsp; krio/anhidroprotektant. Iako je krioprotektivna dehidratacija opisana i kod drugih vrsta<br />insekata, molekularni mehanizmi koji se nalaze u osnovi ovog fenomena su veoma slabo razja&scaron;njeni.<br />Za karakterizaciju genoma generisano je 16379 EST sekvenci za&nbsp;<em> O. arcticus </em>i 1180 za&nbsp; <em>C. antarcticus</em>. To su ujedno i prvi javno dostupni podaci u bazama podataka o genomima ove dve vrste koji predstavljaju značajnu osnovu za komparativne genomske analize. Činjenica da kod obe analizirane vrste, oko 60% EST sekvenci nije pokazalo statistički značajnu sličnost sa proteinima iz baza podataka ukazuje na specifičan patern genske ekspresije kao adaptivni odgovor ispitivanih vrsta na niske temperature.<br />Sa ciljem da se identifikuju geni uključeni u preživljavanje niskih temperatura konstruisani su mikroereji, za&nbsp;<em> O. arcticus</em> &scaron;tampanjem 6912 cDNK u duplikatu, a za&nbsp; <em>C. antarcticus</em> &scaron;tampanjem 672 cDNK u duplikatu.. Analizom sekvenci identifikovanih putem homologije sa dostupnm bazama podataka kod C. antarcticusuočen je jasan trend povećane ekspresije gena koji kodiraju strukturne proteine u grupi koja je otporna na hladnoću. Ove strukturne proteine uglavnom&nbsp; čine kutikularni proteini, &scaron;to je u skladu sa rezultatima nedavnih istraživanja kod kolembola, da je presvlačenje proces tokom kog se snižava tačka superhlađenja, odnosno da varijacije u tački superhlađenja mogu nastati kao posledica endogenih fiziolo&scaron;kih procesa tokom presvlačenja. Kod&nbsp;<em> O. arcticus </em>analizom EST sekvenci i mikroereja identifikovani su<br />potencijalni geni i biohemijski putevi povezani sa krioprotektivnom dehidratacijom, a istakli bi gene uključene u metabolizam ugljenih hidrata, gene za akvaporine, proteine toplotnog stresa, LEA proteine i enzime antioksidativne za&scaron;tite.</p> / <p>The ability of insects to adapt to diverse ecological conditions iswell documented; they &nbsp;are the most diverse fauna on earth, with different species occupying arange of terrestrial and aquatic habitats from the tropics to the poles. Understanding the mechanisms by which insects survive such extreme temperatures and retain viability for longperiods in the dormant state is of great interest to many scientific fields. Insects have evolved three main strategies to survive sub-zero temperatures:&nbsp; i) freeze tolerance,&nbsp; ii) freeze avoidance and&nbsp; iii) cryoprotective dehydration. The main biochemical compounds involved in surviving sub-zero temperatures are same for different strategies but their physiological&nbsp; role is different. They include: ice nucleating agents (INAs), cryo/ anhydroprotectants, and antifreeze proteins (AFPs).&nbsp;</p><p>The aim of this study was to determine molecular adaptations to extreme cold&nbsp; environments, combining physiology, biochemistry and molecular biology&nbsp; pproaches, in thePolar Collembola:&nbsp; Cryptopygus antarcticus and&nbsp; Onychiurus arcticus. Both species are freeze avoiding but employ different strategies for surviving low temperatures. The Antarctic springtail&nbsp; C. antarcticusis capable of rapid cold hardening with a bi-modal distribution of super cooling points (SCP) with high (less cold-hardened) and low (more&nbsp; cold-hardened) groups of animals present even during the growing season in summer. This bimodal distribution has been well documented, but is poorly understood. The Arctic springtail&nbsp; O. arcticusemploys the strategy known as cryoprotective dehydration to survive winter temperatures as low as &nbsp; -25&ordm;C. With this technique, the amount ofavailable water in the body&nbsp; is reduced to almost zero and also there is an accumulation of trehalose, which acts as a cryo/anhydroprotectant. Although cryoprotective dehydration has been described in &nbsp;other&nbsp; insects, the molecular mechanisms behind this phenomenon are poorly understood.</p><p>A total of 16,379 EST clones were generated for O. arcticus and 1180 for C. antarcticus. This represents the first publicly available sequence data for this two species providing useful data for comparative genomic analysis. The fact that around 60% of the clones for both species showed no sequence similarity to annotated genes &nbsp;in the datasets, suggests a specific pattern of gene expression in these species as adaptation to low temperatures.</p><p>Two microarrays were constructed to identify genes involved in&nbsp; surviving low temperatures, one for C. antarcticus by printing 672 clones in duplicate and the other&nbsp; for O. arcticus by&nbsp; printing 6912 clones in duplicate. An analysis of those where putative function could be inferred via database homology, in C. antarcticus there was aclear pattern of up-regulation of structural proteins being associated with the cold tolerant group.&nbsp; These structural proteins mainly comprised cuticle proteins and provide support for the recenttheory that summer SCP variation within Collembola species could be a consequence of moulting, with moulting population having lowered SCPs. In O. arcticus EST and microarrayanalysis revealed clones&nbsp;and biochemical pathways associated with cryoprotective dehydration with a particular&nbsp; reference to genes involved in carbohydrate metabolism, aquaporin&nbsp; genes, heat shock&nbsp; proteins, LEA proteins and antioxidant enzymes.</p>

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No description available.

The purpose of this study was to determine whether deep-cryogenic freezing produces a change in the timbre or playing characteristics of brass trumpets. The experimental procedure consisted of two parts: quantitative analysis and qualitative analysis. For qualitative analysis a panel of four professional trumpet players evaluated five trumpets: four were frozen and re-evaluated, and one served as the experimental control. Analysis of the harmonic spectra of tones from each instrument provided quantitative data. Since previous studies requiring the analysis of musical instrument tones have suffered from a high degree of variation among tones played by human performers, I constructed a mechanical device that could play tones on the test instruments with greater consistency than is possible with live performers.The changes observed in the qualitative and quantitative analyses are very small, and possibly contradictory. The test panel rated all of the instruments higher after they had been frozen, and any actual improvement in the playing characteristics is suspect because the control instrument received the second highest improvement of the five instruments in the study. In the quantitative analysis, I observed some slight changes in the amplitudes of some of the harmonics in the spectral graphs, but I also observed slight variations in some of the harmonics of the control instrument. Inconsistencies in the performance of the electronic equipment used in the study could account for some of the variation. The instrument that showed the most statistically significant improvements was rated significantly higher in intonation after cryogenic processing, but I was unable to measure any frequency changes in the tones the mechanical embouchure played on the test instruments.Although one may not actually be able to measure differences reported in the qualitative analysis, it is not possible to rule out any acoustical change from cryogenic freezing. In fact, in the quantitative measurements, three of the instruments showed changes greater (some positive and some negative) than the "experimental error" seen in the control instrument's measurements. Additionally, one member of the test panel is convinced that cryogenic freezing has improved his instrument significantly, but the other three trumpeters are ambivalent. / School of Music