The landscape of consumer electronics has drastically changed over the last decade. Technological advances have led to the development of portable media devices, such as the iPod, smart phones and laptops. This has been achieved primarily through miniaturisation and using materials such as Lithium and Indium Tin Oxide (ITO) to increase energy density in batteries and as transparent electrodes for light emitting displays respectively. However, ten years on there are now new consumer demands, which are dictating the direction of research and new products are under constant development. Graphene is a promising next-generation material that was discovered in 2004. It is composed of a two-dimensional lattice made only from carbon. The atoms are arranged in a two atom basis hexagonal crystal structure which forms a fundamental building block of all sp2 hybrid forms of carbon. The production of large area graphene has a high cost, due to the long growth times and the high temperatures required. This is relevant as graphene is not viable compared to other transparent conductors which are produced on industrial scales for a fraction of the cost of graphene growth. Furthermore, graphene has a high intrinsic resistivity (2KW/_) which is three orders of magnitude greater than the current industry standard ITO. This limits the size of the electrodes as there is dissipation of energy across the electrode leading to inefficiency. Furthermore a potential drop occurs across the electrode leading to a non-uniform light emission when the electrode is used in a light emitting display. I investigate alternative methods of large area graphene growth with the aim of reducing the manufacturing costs, while maintaining the quality required for graphene human interface devices. Building on this I develop new fabrication methods for the production of large-area graphene devices which are flexible and transparent and show the first all graphene touch sensor. Focusing on the reducing the high resistivity of graphene using FeCl3 intercalation, while maintaining high optical transmission, I show low resistivity achieved using this process for microscopic graphene flakes, large-area graphene grown on silicon carbide and large-area graphene grown by CVD. Furthermore, I explore the stability of FeCl3 intercalated graphene and a process to transfer a material to arbitrary flexible substrates.

International Telemetering Conference Proceedings / October 17-20, 1994 / Town & Country Hotel and Conference Center, San Diego, California / This paper presents the findings of the Space Tracking Systems/Options Study (STS/OS) and indicates its impact on the telemetering community. The STS/OS was commissioned by Air Force Test & Evaluation (AF/TE) to develop a long range plan (vision and roadmap) for the AF Test & Evaluation (T&E) community to ensure affordable capabilities (telemetry, tracking and commanding) for the future (2003-2008). The study was conducted by the Air Force Materiel Command (AFMC), Space & Missile Systems Center (SMC), Detachment 9, at Vandenberg AFB (VAFB), with support from the primary AFMC T&E centers, the Air Force Operational Test & Evaluation Command (AFOTEC), and the Air Force Space Command (AFSPC). Both "open air" aeronautical and astronautical test needs were considered. The study solicited requirements for existing and future programs, extrapolated existing and planned test capabilities out into the future, then compared the two to identify future shortfalls in capabilities and specific actions that are necessary to insure that the future program needs can be met. Three critical types of testing were identified that cannot be satisfied with existing or planned instrumentation. These are: large area testing (LAT), over the horizon testing (OTH), and space weapons testing (SWT). A major deficiency was also uncovered in end game scoring for air and space intercepts, where inadequate capability exists to perform the required vector miss-distance measurement. This paper is important to the telemetering community because it identifies the Global Positioning System (GPS) as the primary time space position information (TSPI) system for all future open air testing. GPS provides a passive capability that permits each vehicle to determine its own precise TSPI. Means must be provided, however, for the vehicle to relay its position to the appropriate range control center. The paper shows that the problems with down linking telemetry, aircraft buss data, digital audio, digital video, and TSPI collectively represent the need for a very capable datalink. Likewise, the need to uplink commands, synthetic targets, synthetic backgrounds, and target control information also represents the need for a very capable datalink. With its extensive expertise in RF linkages, the telemetering community is ideally suited to address this need for a robust datalink for the future of T&E.

Since the discovery of graphene, substantial effort has been put toward the synthesis and production of 2D materials. Developing scalable methods for the production of high-quality exfoliated nanosheets has proved a significant challenge. To date, the most promising scalable method for achieving these materials is through the liquid-based exfoliation (LBE) of nanosheetsin solvents. Thin films of nanosheets in dispersion can be modified with additives to produce 2D inks for printed electronics using inkjet printing. This is the most promising method for the deposition of such materials onto any substrate on an industrial production level. Although well-developed metallic and organic printed electronic inks exist on the market, there is still a need to improve or develop new inks based on semiconductor materials such as transition metal dichalcogenides (TMDs) that are stable, have good jetting conditions and deliver good printing quality.The inertness and mechanical properties of layered materials such as molybdenum disulfide (MoS2) make them ideally suited for printed electronics and solution processing. In addition,the high electron mobility of the layered semiconductors, make them a candidate to become a high-performance semiconductor material in printed electronics. Together, these features make MoS2 a simple and robust material with good semiconducting properties that is also suitable for solution coating and printing. It is also environmentally safe.The method described in this thesis could be easily employed to exfoliate many types of 2D materials in liquids. It consists of two exfoliation steps, one based on mechanical exfoliation of the bulk powder utilizing sand paper, and the other inthe liquid dispersion, using probe sonication to liquid-exfoliate the nanosheets. The dispersions, which were prepared in surfactant solution, were decanted, and the supernatant was collected and used for printing tests performed with a Dimatix inkjetprinter. The printing test shows that it is possible to use the MoS2 dispersion as a printed electronics inkjet ink and that optimization for specific printer and substrate combinations should be performed. There should also be advances in ink development, which would improve the drop formation and break-off at the inkjet printing nozzles, the ink jetting and, consequently, the printing quality. / Sedan upptäckten av grafen har mycket arbete lagts på framställning och produktion av 2D-material. En viktig uppgift har varit att ta fram skalbara metoder för produktion av högkvalitativa  nanosheets via exfoliering. Den mest lovande skalbarametoden hittills har varit vätskebaserad exfoliering av nanosheets i lösningsmedel. Tunna filmer av nanosheets i dispersion kan anpassas med hjälp av tillsatser och användas för tillverkning av halvledare strukturer med inkjet-skrivare, vilket är den mest lovande metoden för på en industriell produktions nivå beläggaden typen av material på substrat. Även om det finns välutvecklade metalliska och organiskabläck för tryckt elektronik, så finns det fortfarande ett behov av att förbättra eller utveckla nya bläck baserade på halvledarmaterial som t.ex. TMD, som är stabila, har goda bestryknings  egenskaper och ger bra tryckkvalitet. Den inerta naturen tillsammans med de mekaniska egenskaperna som finns hosskiktade material, som t.ex. molybdendisulfid (MoS2), gör demlämpliga för flexibel elektronik och bearbetning i lösning. Dessutom gör den höga elektronmobiliteten i dessa 2D-halvledaredem till en stark kandidat som halvledarmaterial inom trycktelektronik. Det betyder att MoS2 är ett enkelt och robust material med goda halvledaregenskaper som är lämpligt för bestrykning från lösning och tryck, och är miljömässigt säker.Den metod som beskrivs här kan med fördel användas föratt exfoliera alla typer av 2D-material i lösning. Exfolieringensker i två steg; först mekanisk exfoliering av torr bulk med sandpapper, därefter används ultraljudsbehandling i lösning för att exfoliera nanosheets. De dispersioner som framställts i lösning med surfaktanter dekanterades och det övre skiktetanvändes i trycktester med en Dimatix inkjet-skrivare.Tryckprovet visar att det är möjligt att använda MoS2 -dispersion som ett inkjet-bläck och att optimering för särskildaskrivar- och substratkombinationer borde göras, såsom förbättringav bläcksammansättningen med avseende på droppbildning och break-off vid skrivarmunstycket, vilket i sin tur skulleförbättra tryckkvaliteten. / KM2 / Paper Solar Cells

Uma das exigências na calibração de monitores de radiação de contaminação de superfície consiste no uso de fontes extensas de referência com um valor de uniformidade superior a 90%. Entretanto, foi verificado em alguns laboratórios de calibração que suas fontes não atendiam essa exigência, o que obrigaria esses laboratórios a não utilizarem tais fontes em suas calibrações. Foi neste contexto que foi desenvolvido um estudo para propor o uso dessas fontes, desde que sejam utilizados fatores de correção, que são propostos neste trabalho, que foram avaliados e desenvolvidos usando o código de transporte MCNP como ferramenta de análise e avaliação, a partir dos dados de mapeamento da uniformidade. Também foi desenvolvido um software para calcular esses fatores de correção, utilizando o mapeamento da uniformidade das fontes como dados de entrada e um sistema automatizado para calibração de monitores de radiação de contaminação de superfície. O grande ganho com esse trabalho foi poder utilizar fontes extensas de referência, mesmo quando essas estão em desacordo com as exigências de uniformidade da norma ABNT ISO 8769:2016. / One of the requirements in the calibration of surface contamination radiation monitors is the use of wide area reference sources with a uniformity value greater than 90%. However, it has been found, in some calibration laboratories, that their sources were not meeting this requirement, which would not allow these laboratories to use such sources in their calibration procedures. It was in this context that a study was developed to propose the use of these sources, provided that correction factors are used, which are proposed in this work, which were evaluated and developed using the MCNP radiation transport code as an evaluation tool, from the uniformity mapping data. A software was also developed to calculate these correction factors using the source uniformity mapping as an input data along with an automated system for calibration of surface contamination radiation monitors. The great gain in this work was to be able to use wide area reference sources, even when they are in disagreement with the uniformity requirements of ISO 8769:2016.

Uma das exigências na calibração de monitores de radiação de contaminação de superfície consiste no uso de fontes extensas de referência com um valor de uniformidade superior a 90%. Entretanto, foi verificado em alguns laboratórios de calibração que suas fontes não atendiam essa exigência, o que obrigaria esses laboratórios a não utilizarem tais fontes em suas calibrações. Foi neste contexto que foi desenvolvido um estudo para propor o uso dessas fontes, desde que sejam utilizados fatores de correção, que são propostos neste trabalho, que foram avaliados e desenvolvidos usando o código de transporte MCNP como ferramenta de análise e avaliação, a partir dos dados de mapeamento da uniformidade. Também foi desenvolvido um software para calcular esses fatores de correção, utilizando o mapeamento da uniformidade das fontes como dados de entrada e um sistema automatizado para calibração de monitores de radiação de contaminação de superfície. O grande ganho com esse trabalho foi poder utilizar fontes extensas de referência, mesmo quando essas estão em desacordo com as exigências de uniformidade da norma ABNT ISO 8769:2016. / One of the requirements in the calibration of surface contamination radiation monitors is the use of wide area reference sources with a uniformity value greater than 90%. However, it has been found, in some calibration laboratories, that their sources were not meeting this requirement, which would not allow these laboratories to use such sources in their calibration procedures. It was in this context that a study was developed to propose the use of these sources, provided that correction factors are used, which are proposed in this work, which were evaluated and developed using the MCNP radiation transport code as an evaluation tool, from the uniformity mapping data. A software was also developed to calculate these correction factors using the source uniformity mapping as an input data along with an automated system for calibration of surface contamination radiation monitors. The great gain in this work was to be able to use wide area reference sources, even when they are in disagreement with the uniformity requirements of ISO 8769:2016.

Large area flat displays are nowadays considered being a commodity. After the era of bulky CRT TV technology, LCD and OLED have taken over as the most prevalent technologies for high quality image display devices. An important factor underlying the success of these technologies has been the development of high performance photomask writers in combination with a precise photomask process. Photomask manufacturing can be regarded as an art, highly dependent on qualified and skilled workers in a few companies located in Asia. The manufacturing yield in the photomask process depends to a great extent on several steps of measurements and inspections. Metrology, which is the focus of this thesis, is the science of measurement and is a prerequisite for maintaining high quality in all manufacturing processes. The details and challenges of performing critical measurements over large area photomasks of square meter sizes will be discussed. In particular the development of methods and algorithms related to the metrology system MMS15000, the world standard for large area photomask metrology today, will be presented. The most important quality of a metrology system is repeatability. Achieving good repeatability requires a stable environment, carefully selected materials, sophisticated mechanical solutions, precise optics and capable software. Attributes of the air including humidity, CO2 level, pressure and turbulence are other factors that can impact repeatability and accuracy if not handled properly. Besides the former qualities, there is also the behavior of the photomask itself that needs to be carefully handled in order to achieve a good correspondence to the Cartesian coordinate system. An uncertainty specification below 100 nm (3σ) over an area measured in square meters cannot be fulfilled unless special care is taken to compensate for gravity-induced errors from the photomask itself when it is resting on the metrology tool stage. Calibration is therefore a considerable challenge over these large areas. A novel method for self-calibration will be presented and discussed in the thesis. This is a general method that has proven to be highly robust even in cases when the self-calibration problem is close to being underdetermined. A random sampling method based on massive averaging in the time domain will be presented as the solution for achieving precise spatial measurements of the photomask patterns. This method has been used for detection of the position of chrome or glass edges on the photomask with a repeatability of 1.5 nm (3σ), using a measurement time of 250 ms. The method has also been used for verification of large area measurement repeatability of approximately 10 nm (3σ) when measuring several hundred measurement marks covering an area of 0.8 x 0.8 m2. The measurement of linewidths, referred to in the photomask industry as critical dimension (CD) measurements, is another important task for the MMS15000 system. A threshold-based inverse convolution method will be presented that enhances resolution down to 0.5 µm without requiring a change to the numerical aperture of the system. As already mentioned, metrology is very important for maintaining high quality in a manufacturing environment. In the mask manufacturing industry in particular, the cost of poor quality (CoPQ) is extremely high. Besides the high materials cost, there are also the stringent requirements placed on CD and mask overlay, along with the need for zero defects that make the photomask industry unique. This topic is discussed further, and is shown to be a strong motivation for the development of the ultra-precision metrology built into the MMS15000 system. / <p>QC 20130515</p>

A Voltage Controlled Oscillator (VCO) based pixel and array architecture is reported using amorphous silicon (a-Si) technology for large area digital imaging applications. The objectives of this research are to (a) demonstrate photon quantum noise limited pixel operation of less than 30 input referred noise electrons, (b) theoretically explore the use of the proposed VCO pixel architecture for photon quantum noise limited large area imaging applications, more specifically protein crystallography using a-Si, (c) to implement and demonstrate experimentally a quantum noise limited (VCO) pixel, a small prototype of quantum noise limited (VCO) pixelated array and a quantum noise limited (VCO) pixel integrated with direct detection selenium for energies compatible with a protein crystallography application. Electronic noise (phase noise) and metastability performance of VCO pixels in low cost, widely available a-Si technology will be theoretically calculated and measured for the first time in this research. The application of a VCO pixel architecture in thin film technologies to large area imaging modalities will be examined and a small prototype a-Si array integrated with an overlying selenium X-ray converter will be demonstrated for the first time. A-Si and poly-Si transistor technologies are traditionally considered inferior in performance to crystalline silicon, the dominant semiconductor technology today. This work v aims to extend the reach of low cost, thin film transistor a-Si technology to high performance analog applications (i.e. very low input referred noise) previously considered only the domain of crystalline silicon type semiconductor. The proposed VCO pixel architecture can enable large area arrays with quantum noise limited pixels using low cost thin film transistor technologies.

Large Area Maskless Photopolymerization (LAMP) is a direct digital manufacturing technology being developed at Georgia Tech to produce ceramic molds for investment casting of turbine airfoils. In LAMP, UV light incident on a spatial light modulator is projected in the form of a structured black and white bitmap image onto a platform supporting slurry comprising a ceramic particle loaded photocurable resin. Curing of the resin is completed rapidly with exposures lasting 20~160ms. Three-dimensional parts are built layer-by-layer by sequentially applying and selectively curing resin layers of 25-100 micron thickness. In LAMP, diacrylate-based ceramic particle-loaded resins with photoinitiators sensitive in the range of spectral characteristics of the UV source form the basis for an ultra-fast photopolymerization reaction. At the start of the reaction, the monomer molecules are separated by van der Waals distance (~10⁴Å). As the reaction proceeds, these monomer molecules form a closely packed network thereby reducing their separation to covalent bond lengths (~ 1 Å). This results in bulk contraction in the cured resin, which accumulates as the part is fabricated layer-by-layer. The degree of shrinkage is a direct measure of the number of covalent bonds formed. Thus, shrinkage in LAMP is characterized by estimating the number of covalent bonds formed during the photopolymerization reaction. Polymerization shrinkage and accompanying stresses developed during photopolymerization of ceramic particle-loaded resins in LAMP can cause deviations from the desired geometry. The extent of deviations depends on the photoinitiator concentration, the filler loading, the degree of monomer conversion, and the operating parameters such as energy dose. An understanding of shrinkage and stresses built up in a part can assist in developing source geometry compensation algorithms and exposure strategies to alleviate these effects. In this thesis, an attempt has been made to understand the curing kinetics of the reaction and its relation to the polymerization shrinkage. Realtime Fourier Transform Infrared Spectroscopy (RTFTIR) is used to determine the conversion of monomers into polymer networks by analyzing the changes in the chemical bonds of the participating species of molecules. The conversion data can further be used to estimate the curing kinetics of the reaction and the relative volumetric shrinkage strain due to polymerization.

Dédié à l'étude du ciel en rayons gamma, le satellite Fermi comporte à son bord le Large AreaTelescope (LAT), sensible au rayonnement de 20 MeV à plus de 300 GeV. Sa sensibilité et ses performances grandissantes apportent de plus en plus de contraintes sur les nébuleuses à vent de pulsar. Ces nébuleuses sont alimentées par l'injection permanente d'un vent d'électrons et de positrons relativistes accélérés par l'onde de choc délimitant la nébuleuse. Ces particules chargées rayonnent dans les différents domaines du spectre électromagnétique et notamment dans le domaine des rayons gamma à l'aide du processus de diffusion Compton inverse. Cette thèse présente l'étude morphologique et spectrale détaillée de deux sources potentiellement associées à des nébuleuses : MSH 11-62 et HESS J1857+026, afin de déterminer si l'émission gamma est produite par des nébuleuses de pulsar. Dans un deuxième temps, l'analyse de toutes les sources reliées à des contreparties détectées par les télescopes Cerenkov permet la détection de six nouvelles nébuleuses de pulsars et candidats dans la gamme de Fermi. Ceci permet d'apporter de nouvelles contraintes sur les propriétés physiques des nébuleuses de pulsar ainsi que sur les mécanismes d'émission à l'aide de modèles et d'études sur la population totale détectée par le LAT.

A Voltage Controlled Oscillator (VCO) based pixel and array architecture is reported using amorphous silicon (a-Si) technology for large area digital imaging applications. The objectives of this research are to (a) demonstrate photon quantum noise limited pixel operation of less than 30 input referred noise electrons, (b) theoretically explore the use of the proposed VCO pixel architecture for photon quantum noise limited large area imaging applications, more specifically protein crystallography using a-Si, (c) to implement and demonstrate experimentally a quantum noise limited (VCO) pixel, a small prototype of quantum noise limited (VCO) pixelated array and a quantum noise limited (VCO) pixel integrated with direct detection selenium for energies compatible with a protein crystallography application. Electronic noise (phase noise) and metastability performance of VCO pixels in low cost, widely available a-Si technology will be theoretically calculated and measured for the first time in this research. The application of a VCO pixel architecture in thin film technologies to large area imaging modalities will be examined and a small prototype a-Si array integrated with an overlying selenium X-ray converter will be demonstrated for the first time. A-Si and poly-Si transistor technologies are traditionally considered inferior in performance to crystalline silicon, the dominant semiconductor technology today. This work v aims to extend the reach of low cost, thin film transistor a-Si technology to high performance analog applications (i.e. very low input referred noise) previously considered only the domain of crystalline silicon type semiconductor. The proposed VCO pixel architecture can enable large area arrays with quantum noise limited pixels using low cost thin film transistor technologies.