Biosensors are used for the detection of a range of analytes for applications in healthcare, food production, environmental monitoring and biodefence. However, many biosensing platforms are large, expensive, require skilled operators or necessitate the analyte to be labelled. Direct electrochemical detection methods present a particularly attractive platform due to the simplified instrumentation when compared to other techniques such as fluorescence-based biosensors. With modern integrated circuit capabilities electrochemical biosensors offer greater suitability for monolithic integration with any necessary signal processing circuitry. This thesis explores micro- and nanogap devices for both redox cycling and dielectric spectroscopy sensing mechanisms. By using two electrodes with interelectrode separation down to distances in the micro- and nanometre scale, several benefits can be realised. Firstly the close proximity of the two electrodes significantly reduces the interdiffusion time. This allows an electroactive species to be rapidly shuttled across the gap and switched between reduced and oxidised states. The result is feedback amplification of the amperometric response, increasing the signal. The second benefit is that the screening effect caused by electric double layers at the electrode–electrolyte interface is reduced due to the electric double layers occupying a larger fraction of the sensing volume. This significantly improves the sensor suitability for dielectric spectroscopy by increasing the potential drop across the biolayer. These two sensing mechanisms are demonstrated using a large area dual-plate microgap device for the detection of two different analytes. Utilising the first mode, detection of cysteine–cystine, an important redox couple involved in the signalling mechanism for the regulation of protein function, interaction and localisation is shown. The microgap device is then used for dielectric spectroscopy sensing of a mannose-specific uropathogenic Escherichia coli strain whilst also demonstrating the effect of ionic concentration on the capacitive response. The response of these devices is highly dependent on the interelectrode separation as well as the surface area of the electrodes. However, fabrication of large-area nanogap devices presents a significant challenge. This meant that careful optimisation and the development of novel techniques was necessary. This work reports the design, fabrication and characterisation of both a vertical and a horizontal coplanar large area nanogap device. The vertical nanogap device is fabricated using an inductively-coupled plasma reactive ion etching process to create a channel in a silicon substrate. A lower electrode is then optically patterned in the channel before anodically bonding a second identical electrode patterned on glass directly above. The horizontal nanogap device uses a different approach, utilising a state-of-the-art electron-beam lithography system to create a long serpentine nanogap with passivation to reduce fringing effects. The design allows the electron-beam lithography step to be substituted with nanoimprint lithography to reduce cost and improve throughput. Both of these devices have integrated microfluidic channels and provide a capacity for relatively high-throughput production.

Dédié à l'étude de l'astronomie gamma, le satellite Fermi a été lancé le 11 juin 2008. Il comporte à son bord l'instrument Large Area Telescope (LAT), sensible au rayonnement gamma dans la gamme d'énergie de 20 MeV à 300 GeV. Bien que la nébuleuse du Crabe ait été étudiée dans la gamme d'énergie 70 MeV à 30 GeV couverte par son précédesseur, l'expérience CGRO-EGRET, aucune nébuleuse n'a jamais été clairement identifiée dans le domaine des rayons gamma de haute énergie jusqu'au lancement de Fermi. Les pulsars alimentent les nébuleuses qui les entourent par l'injection permanente d'un vent d'électrons et positrons relativistes qui, accélérés au niveau de l'onde de choc délimitant les nébuleuses de pulsars, émettent un rayonnement pouvant être observé dans les différents domaines du spectre électromagnétique, et notamment dans le domaine des rayons gamma de haute énergie. Les données recueillies par le Fermi-LAT au cours des deux premières années de mission ont désormais permis la détection et l'identification de trois nébuleuses et de leurs pulsars associés (nébuleuses du Crabe, de Vela-X et de MSH 15-52) ainsi que de la nébuleuse de pulsar HESS J1825-137 découverte par les instruments au sol dédiés à l'astronomie gamma de très haute énergie. Les résultats des analyses temporelle, spectrale et morphologique réalisées sur les systèmes pulsars/nébuleuses détectés par le LAT sont exposés dans ce manuscrit. La synthèse des études systématiques réalisées (i) dans les régions comportant un pulsar émetteur en rayons gamma et (ii) dans les régions comportant une source émettrice de rayons gamma de très haute énergie étant identifiée en tant que nébuleuse de pulsar ou candidate en tant que telle, sont également présentés dans cette thèse. Ces études apportent de nouvelles contraintes sur les propriétés physiques des sources ainsi que sur les mécanismes de rayonnement mis en jeu dans la magnétosphère des pulsars et au sein de leurs nébuleuses.

Dark matter (DM) constitutes one of the most intriguing but so far unresolved issues in physics. In many extensions of the Standard Model of particle physics, the existence of a stable Weakly Interacting Massive Particle (WIMP) is predicted. The WIMP is an excellent DM particle candidate. One of the most interesting scenarios is the creation of monochromatic gamma-rays from the annihilation or decay of these particles. This type of signal would represent a “smoking gun” for DM, since no other known astrophysical process should be able to produce it. In this thesis, the search for spectral lines with the Large Area Telescope (LAT) onboard the Fermi Gamma-ray Space Telescope (Fermi) is presented. The satellite was successfully launched from Cape Canaveral in Florida, USA, on 11 June, 2008. The energy resolution and performance of the detector are both key factors in the search and are investigated here using beam test data, taken at CERN in 2006 with a scaled-down version of the Fermi-LAT instrument. A variety of statistical methods, based on both hypothesis tests and confidence interval calculations, are then reviewed and tested in terms of their statistical power and coverage. A selection of the statistical methods are further developed into peak finding algorithms and applied to a simulated data set called obssim2, which corresponds to one year of observations with the Fermi-LAT instrument, and to almost one year of Fermi-LAT data in the energy range 20–300 GeV. The analysis on Fermi-LAT data yielded no detection of spectral lines, so limits are placed on the velocity-averaged cross-section, <img src="http://www.diva-portal.org/cgi-bin/mimetex.cgi?%3C%5Csigma%20v%3E_%7B%5Cgamma%20X%7D" />, and the decay lifetime, <img src="http://www.diva-portal.org/cgi-bin/mimetex.cgi?%5Ctau_%7B%5Cgamma%20X%7D" />, and theoretical implications are discussed. / QC20100525 / GLAST

The development of functional flexible electronics is essential to enable applications such as conformal medical imagers, wearable health monitoring systems, and flexible light-weight displays. Intensive research on thin-film transistors (TFTs) is being conducted with the goal of producing high-performance devices for improved backplane electronics. However, there are many challenges regarding the performance of devices fabricated at low temperatures that are compatible with flexible plastic substrates. Prior work has reported on the change in TFT characteristics due to mechanical strain, with especially extensive data on the effect of strain on field-effect mobility. This thesis investigates the effect of gate-bias stress and elastic strain on the long-term stability of flexible low-temperature hydrogenated amorphous silicon (a-Si:H) TFTs, as the topic has yet to be explored systematically. An emphasis was placed on bias-stress measurements over time in order to obtain information on the physical mechanisms of instability. Drain current was measured over various intervals of time to track the degradation of devices due to metastability, and results were then compared across devices of various sizes under tensile, compressive, and zero strain. Transfer characteristics of the TFTs were also measured under the different conditions, to allow for extraction of parameters that would provide insight into the instability mechanisms. In addition to parameter extraction, the degradation and recovery of TFT output current was quantitatively compared for various bias-stress times across the different levels of strain. Finally, the instability mechanisms are modelled with a Markov system to further examine the effect of strain on long-term TFT operation. From the analysis of results, it was found that shallow charge trapping in the dielectric is the main mechanism of instability for short bias stress times, and did not seem to be greatly affected by strain. For longer bias stress times of over 10000 seconds, defect creation in the a-Si:H becomes a more significant contributor to instability. Both tension and compression increased defect creation compared to TFTs with zero applied strain. Compression appeared to cause the greatest increase in the rate of defect formation, likely by weakening Si-Si bonds in the a-Si:H. Tension appeared to cause a less significant increase, possibly due to a strengthening of some proportion of the Si-Si bonds caused by the slight elongation of bond length or because the applied tension relieves intrinsic compressive stress in a-Si:H film. A longer conduction path and greater dielectric area appears to increase the bias-stress and strain-related effects. Therefore reducing device size should increase the reliability of flexible TFTs.

Le Large Area Telescope (LAT) à bord du satellite Fermi, lancé le 11 Juin 2008, est sensible au rayonnement gamma de20 MeV à plus de 300 GeV. 148 pulsars gamma à ce jour ont été détectés avec le Fermi-LAT, dont 117 sont détaillés dansle Deuxième Catalogue de Pulsars gamma de Fermi (2PC). Les pulsars forment la plus grande classe de sources au GeVdans la Voie Lactée. Les études de pulsars gamma apportent des contraintes importantes sur les modèles d'émission gamma etpermettent des percées dans notre compréhension des pulsars.Cette thèse présente des détections de sept pulsars gamma faibles déjà connus en radio, dont quatre jeunes ou d'âgesmoyens et trois millisecondes (MSP). L'analyse spectrale et la caractérisation des courbes de lumiére sont décriteset comparées à la population de 2PC. Ces détections ont l'intérêt particulier de sonder et d'étendre l'espace desparamètres de la population actuelle. Elles illustrent la distorsion inhérente dans 2PC et marquent la transition de lapremière phase (pulsars brillants) à la seconde phase (pulsars faibles) d'opération de Fermi. Le développement desmodèles théoriques et un recensement complet de la population galactique des étoiles à neutrons bénéficieront de plusde détections de pulsars faibles dans les années à venir.Certains pulsars gamma dans 2PC manifestant de grande efficacité gamma sont étudiés dans cette thèse. L'examen desdifférents paramètres qui influencent l'efficacité conduit à quelques candidats pour lesquels un plus grand momentd'inertie est nécessaire afin de résoudre le paradoxe de grande efficacité. Les observations de Fermi en rayons gamma ontl'air à apporter des contraintes indépendantes sur le moment d'inertie et les équations d'état des étoiles à neutrons.

The prospect of producing nanometer channel-length thin film transistors (TFTs) for active matrix addressed pixelated arrays opens up new high-performance applications in which the most amenable device topology is the vertical thin film transistor (VTFT) in view of its small area. The previous attempts at fabricating VTFTs have yielded devices with a high drain leakage current, a low ON/OFF current ratio, and no saturation behaviour in the output current at high drain voltages, all induced by short channel effects. To overcome these adversities, particularly dominant as the channel length approaches the nano-scale regime, the reduction of the gate dielectric thickness is essential. However, the problems with scaling the gate dielectric thickness are the high gate leakage current and early dielectric breakdown of the insulator, deteriorating the device performance and reliability. A novel ultra-thin SiNx film suitable for the application as the gate dielectric of short channel TFTs and VTFTs is developed. The deposition is performed in a standard 13.56MHz PECVD system with silane and ammonia precursor gasses diluted in nitrogen. The deposited 50nm SiNx films demonstrate excellent electrical characteristics in terms of a leakage current of 0.1 nA/cm?? and a breakdown electric field of 5.6MV/cm. Subsequently, the state of the art performances of 0.5??m channel length VTFTs with 50 and 30nm thick SiNx gate dielectrics are presented in this thesis. The transistors exhibit ON/OFF current ratios over 10^9, the subthreshold slopes as sharp as 0.23 V/dec, and leakage currents in the fA range. More significantly, a high associated yield is obtained for the fabrication of these devices on 3-inch rigid substrates. Finally, to illustrate the tremendous potential of the VTFT for the large area electronics, a 2.2-inch QVGA AMOLD display with in-pixel VTFT-based driver circuits is designed and fabricated. An outstanding value of 56% compared to the 30% produced by conventional technology is achieved as the aperture ratio of the display. Moreover, the initial measurement results reveal an excellent uniformity of the circuit elements.

The development of functional flexible electronics is essential to enable applications such as conformal medical imagers, wearable health monitoring systems, and flexible light-weight displays. Intensive research on thin-film transistors (TFTs) is being conducted with the goal of producing high-performance devices for improved backplane electronics. However, there are many challenges regarding the performance of devices fabricated at low temperatures that are compatible with flexible plastic substrates. Prior work has reported on the change in TFT characteristics due to mechanical strain, with especially extensive data on the effect of strain on field-effect mobility. This thesis investigates the effect of gate-bias stress and elastic strain on the long-term stability of flexible low-temperature hydrogenated amorphous silicon (a-Si:H) TFTs, as the topic has yet to be explored systematically. An emphasis was placed on bias-stress measurements over time in order to obtain information on the physical mechanisms of instability. Drain current was measured over various intervals of time to track the degradation of devices due to metastability, and results were then compared across devices of various sizes under tensile, compressive, and zero strain. Transfer characteristics of the TFTs were also measured under the different conditions, to allow for extraction of parameters that would provide insight into the instability mechanisms. In addition to parameter extraction, the degradation and recovery of TFT output current was quantitatively compared for various bias-stress times across the different levels of strain. Finally, the instability mechanisms are modelled with a Markov system to further examine the effect of strain on long-term TFT operation. From the analysis of results, it was found that shallow charge trapping in the dielectric is the main mechanism of instability for short bias stress times, and did not seem to be greatly affected by strain. For longer bias stress times of over 10000 seconds, defect creation in the a-Si:H becomes a more significant contributor to instability. Both tension and compression increased defect creation compared to TFTs with zero applied strain. Compression appeared to cause the greatest increase in the rate of defect formation, likely by weakening Si-Si bonds in the a-Si:H. Tension appeared to cause a less significant increase, possibly due to a strengthening of some proportion of the Si-Si bonds caused by the slight elongation of bond length or because the applied tension relieves intrinsic compressive stress in a-Si:H film. A longer conduction path and greater dielectric area appears to increase the bias-stress and strain-related effects. Therefore reducing device size should increase the reliability of flexible TFTs.

This diploma thesis focuses on the preparation of large-scale organic solar cells using techniques compatible with large volume production. The theoretical part consists of research summarizing the basic theoretical background of the function of organic solar cells and the current state of investigation of the shift from laboratory to large-scale production. The experimental part deals with the optimization of methods of preparation of layers of structure of solar cells, which can be converted into industrial scale.

In this thesis, we present our two studies focused on the detection of cosmic γ-rays and the analysis of data from γ-ray observations. One study deals with the method of the Cherenkov transparency coefficient. This method is suitable for the detector calibration in experiments employing imaging atmo- spheric Cherenkov telescopes for the indirect detection of cosmic γ-rays. Us- ing rates of recorded air showers initiated by charged cosmic rays, the method aims at the monitoring of the atmospheric transparency to Cherenkov light and the calibration of the responses of Cherenkov telescopes. We present an extension of this method for the purposes of the Cherenkov Telescope Array observatory and demonstrate its feasibility using Monte Carlo simu- lations. Our other analysis utilizes more than 7 years of data from direct γ-ray observations by the Fermi Large Area Telescope. We describe in detail signal observed from the parts of the sky around the active galactic nuclei 1ES 0229+200 and Centaurus A. We report on the findings of new astro- physical sources of high energy photons and document spectral and temporal properties of their γ-ray fluxes. 1

Electrochemical synthesis of straight, separable, cylindrical nanowires for use as cantilevered mechanical resonators is the main focus of this dissertation. These types of nanowires are significant for many applications, but particularly so for chip-based sensor arrays made for ultrasensitive mass detection. Directed-assembly of nanowire-based devices has enabled the development of large-area fabrication of sensor devices with new functions such as cancer detection at early stage. Chemically stable noble metals gold and rhodium are interesting materials for making nanowire resonators. Gold makes a well-known, stable and strong bond with the thiol group, which enables a range of surface functionalization chemistries. Rhodium nanowires have desirable mechanical properties for resonant mass sensing as they can retain high quality factor (Q-factor) from high vacuum to near atmospheric pressures. As a versatile and inexpensive tool, electrodeposition provides the most suitable synthesis path for gold and rhodium resonator-grade nanowires in nanoporous templates. In this work, the structural characteristics of nanoporous membranes anodized aluminium oxide and track-etched polycarbonate was explored for use as electrodeposition template. New chemistries for making gold and rhodium nanowires are introduced. Although gold cyanide-based solutions work well for the electrochemical synthesis of separable nanowires, the toxicity of cyanide solutions makes non-cyanide alternatives desirable. However, electrochemical synthesis of gold nanowires in templates from non-cyanide solutions suffers from serious drawbacks. These include growth-arresting pellet formation, poor length control and defects such as inclusions. In this dissertation, the first electrochemical synthesis of straight, cylindrical, separable gold nanowires from a sulfite-based solution is presented. This work demonstrates a scheme that suppresses electroless particle growth in the weakly-complexed gold in solution by proper use of additives. The electrochemical nucleation and growth of rhodium nanowires from a sulphate-based solution is also discussed. The effect of pH on the length uniformity as well as the effect of EDTA and polyethylenimine as additives on the development of the wire nanostructure was studied. This study has shown that the control over hydrogen co-reduction on the electrode surface and its bubble transport rate allowed for tailoring the nanostructure of the grown nanowires. The control over electrochemical nucleation and growth of noble metal films for nanowire clamping has also been investigated in this work for making reliable defect-free clamps for nanoresonator measurements. Silver was introduced as a reliable replacement for gold for nanowire clamping. Resonance measurements of rhodium nanowires clamped with silver, confirmed a reliable and repeatable clamp with very small scatter in the plot of resonance frequency variation with appropriate geometric terms. In addition, we found that the elastic modulus of a set of rhodium nanowires synthesized and measured in this work, was 14% larger than in previous studies. / Graduate / 0794 / 0548 / mascotella@gmail.com