The pixel element which is an integrated combination of a p-i-n diode with a thin film transistor (TFT) is used to produce image sensor arrays in scanning and displays technologies, necessitating the deposition of hydrogenated silicon based semiconducting and insulating thin films such as a-Si:H, a-SiNx:H over large area. The widely used techniques to achieve this goal is the plasma enhanced chemical vapor deposition (PECVD) due to its large area and low temperature (&amp / #61603 / 300 &amp / #61616 / C) abilities. In particular, PECVD has proved to be able to deposit both high quality insulator (a-SiNx:H) and active layer of p-i-n diode (intrinsic hydrogenated amorphous silicon carbide, a-SiCx:H) and by sequential deposition, it is possible to minimize the interface related problems, which play an important role in metal insulator semiconductor (MIS) and TFT structures. PECVD deposited a-SiCx:H films over p-type crystal Si and metal substrates (MIS and MIM) were investigated by both admittance spectroscopy (Capacitance or conductance vs. voltage, temperature or frequency measurements) and Deep Level Transient spectroscopy (DLTS) to investigate the interface related problems. In this respect, instability phenomena (due to the creation of metastable states and charge injection into the gate electrode) were studied via the c-Si/a-SiCx:H (and/or a-SiNx:H) heterojunction. Specially, capacitance voltage kinetics were worked out and then the enrolled trap energies were identified with temperature mode DLTS. The expertise gathered as a result of these studies were used in the fabrication and characterization of TFT&amp / #65533 / s. In this respect, inverted gate staggered type Thin Film Transistor produced and characterized for the first time after Combo-251 Pattern Generator was implemented.

With the digital systems moving towards higher frequencies, lower operating voltages and higher power, supplying the required current at the right voltage and at the right time to facilitate timely switching of the CMOS circuits becomes increasingly challenging. The board level power supply cannot meet these requirements directly due to the high inductance of the package interconnections. To overcome this problem, several thin film decoupling capacitors have to be placed on the IC or close to the IC in the package. Two approaches were pursued for high-k thin film decoupling capacitors. 1) Low cost sol-gel based thin film capacitors on organic board compatible Cu-foils 2) RF-sputtered thin film capacitors on silicon substrate for silicon compatible processes While sol-gel provides cost effective technology, sputtered ferroelectric devices are more compatible from manufacturing stand point with the existing technology. Nano-crystalline barium titanate and barium strontium titanate film capacitor devices were fabricated and characterized for organic and silicon substrates respectively. Sol-gel barium titanate films were fabricated first on a bare Cu-foil and then transferred to organic board through a standard lamination process. With process optimization and film doping, a capacitance density of 3 µF/cm2 was demonstrated with breakdown voltage greater than 12V. Leakage current characteristics, breakdown voltages, and electrical reliability of the devices were significantly improved through doping of the barium titanate films and modified film chemistry. Films and interfaces were characterized with high resolution electron microscopy, SEM, XRD, and DC leakage measurements. RF sputtering was selected for ferroelectric thin film integration on silicon substrate. Barium strontium titanate (BST) films were deposited on various electrodes sputtered on silicon substrates. The main focus was to improve interface stabilities for high-k thin films on Si to yield large-area defect-free devices. Effect of bottom electrode selection and barrier layers on device yield and performance were investigated carefully. High yield and high device performance was observed for certain electrode and barrier layer combination. A capacitance density up to 1 µF/cm2 was demonstrated with a breakdown voltage above 15 V on large area, 7 mm2, devices. These two techniques can potentially meet mid-high frequency future decoupling requirements.

L'objectif de la thèse est de proposer une solution pour un circuit intégré matriciel pour l'imagerie de rayons X fonctionnant, soit en mode spectrométrique où l'énergie de chaque photon X est mesurée, soit en mode d'intégration de charges où l'énergie totale déposée par les rayons X pendant une image est mesurée, la solution devant être à terme compatible avec un détecteur de grande surface typiquement de 20 cm x 20 cm. Un circuit de test (ASIC), ‘Sphinx' de 20 x 20 pixels au pas de 200 µm x 200 µm, en technologie CMOS 0.13 µm a été conçu pour servir de preuve du concept proposé. L'architecture de pixel retenue permet la quantification de la charge incidente par des paquets de contre-charges aussi bas que 100 électrons, ces contre-charges étant comptabilisées, soit pour chaque photon X (mode spectrométrique), soit pour la totalité des photons détectés pendant une image (mode intégration). Les premières mesures de caractérisation prouvent la validité du concept avec de bonnes performances en termes de consommation, bruit et linéarité. Une partie des pixels est dédiée à la détection directe des rayons X, ceux-ci étant alors convertis en charges électriques dans un semi-conducteur, tel que CdZnTe par exemple, lequel semiconducteur est couplé pixel à pixel à l'ASIC. Une autre partie des pixels est dédiée à la détection indirecte des rayons X, ceux-ci étant alors convertis en photons visibles dans une couche scintillatrice, telle CsI : Tl par exemple, et chaque pixel de l'ASIC possédant alors une photodiode. Pour ce dernier mode, de nouvelles formes de photodiodes rapides et peu capacitives ont de plus été conçues, simulées, et fabriquées en technologie CMOS 0.13 µm sur un autre ASIC. Enfin, la thèse se conclut en proposant des idées d'amélioration de performances à réaliser potentiellement dans un futur prototype. / The objective of the thesis is to propose a solution for a 2D integrated circuit X-ray imager working, either in spectrometric mode where each X photon energy is measured, or in charge integration mode where the total energy deposited by X-ray during an image is measured, the solution being compatible with large area detectors typically of 20 cm x 20 cm. A proof of concept prototype ASIC 'Sphinx' was designed and fabricated in CMOS 0.13 µm technology; the ASIC being formed of a matrix of 20 x 20 pixels with a 200 µm pixel pitch. The designed architecture allows the quantification of the incoming charge through the use of counter-charge packets as low as 100 electrons. The injected packets are counted for each X photon (in the spectrometric photon counting mode), or for all charges integrated during the image period (in charge integration mode). First characterization measurements prove the validity of the concept with good performance in terms of power consumption, noise, and linearity. A first part of the ASIC is dedicated to X-ray direct detection where a semiconductor, e.g. CdZnTe, hybridized to the ASIC's pixels converts X-photons to electrical charge. Another part of the ASIC is dedicated indirect X-ray detection where a scintillator, e.g. CsI:Tl, is used to convert X-photons to visible photons which are then detected by in-pixel photodiodes. For the latter mode, new forms of photodiodes characterized by fast detection and low capacity were designed, simulated, and fabricated in CMOS 0.13 µm technology on a different ASIC. Finally, the thesis concludes with proposing performance enhancing ideas to be potentially implemented in a future prototype.

Abstract The uniformity of conductive materials is an important property in thin film electronic applications such as solar cells and light emitting diodes (LED). Such uniformity variations are often very small, invisible or below the surface of the film and thus are difficult to detect even when using high-resolution characterization devices. Thus, surface measurement instruments such as profilometer, atomic force microscope, or scanning electron microscope can all encounter remarkable challenges. The uniformity of films can also be analyzed by conductivity measurements. However, they do not provide the precise spatial uniformity information of a large area sample. To be able to investigate systematically the defects of conductive thin films an appropriate sample preparation method was constructed. In addition, a synchronized heating and IR-imaging based system (called synchronized thermography = ST) was developed to overcome the limitations of existing characterization methods. ST performance was tested and analyzed by measuring the single and multi-layer structures. In this work, Indium Tin Oxide (ITO) and poly(3,4-ethylenedioxy-thiopene):poly(styrene-sulfonate) (PEDOT: PSS) were used as examples of conductive thin films. Obtained results show that ST is capable of localizing even small defects from thin film structures based on a single IR-image. In order to make automatic identification of the defect locations and the sizes of the defects, a data processing algorithm was implemented. The performed experiments have proven ST capable of determining the conductivity of the films and the critical bending curvature of ITO. Based on thin film multi-layer PEDOT:PSS measurements, the results suggest use of the ST-method is also suitable for thickness measurements. ST with automatic data processing is a simple method to localize small defects in large-area thin film structures. This approach opens up new possibilities in measuring industrial scale manufacturing processes. / Tiivistelmä Johtavien materiaalien tasalaatuisuus on tärkeä ominaisuus ohutkalvoelektroniikan sovelluksissa kuten aurinkokennoissa ja valoa emittoivissa diodeissa (LED). Tasalaatuisuuserot ovat usein erittäin pieniä, näkymättömiä tai ne sijaitsevat pinnan alla, joten niiden havaitseminen on vaikeaa jopa korkean resoluution karakterisointivälineillä. Niinpä pintaa mittaavat laitteet kuten profilometri, atomivoimamikroskooppi ja skannaava elektronimikroskooppi kohtaavat merkittäviä haasteita. Pinnan tasalaatuisuutta voidaan analysoida myös johtavuusmittauksilla. Ne eivät kuitenkaan anna täsmällistä spatiaalista informaatiota suurista näytteistä. Johtavien ohutkalvojen rikkoutumien systemaattista tutkimista varten kehitettiin oma näytteiden käsittelymenetelmä. Lisäksi kehitettiin synkronoituun lämmitykseen ja infrapunakuvantamiseen perustuva mittaussysteemi (menetelmän nimi: synkronoitu termografia = ST), jolla pyritään ratkaisemaan nykyisten menetelmien rajoitukset. ST-menetelmää testattiin ja analysoitiin mittaamalla yksi- ja monikerroksisten kalvojen rakenteita. Indiumtinaoksidia (ITO) ja poly(3,4-etyleenidioksi-tiofeeni):poly(styreeni-sulfonaatti):a (PEDOT: PSS) käytettiin esimerkkeinä johtavista kalvoista. Tulokset osoittavat, että ST kykenee paikallistamaan pienetkin virheet ohutkalvorakenteista jopa yhden infrapunakuvan perusteella. Automaattisen tiedonkäsittelyn algoritmi implementoitiin identifioimaan virheiden paikkariippuvuuksia ja kokoja. Tehdyt kokeet osoittavat, että ST-menetelmä soveltuu kalvojen johtavuuden ja ITO:n kriittisen taivutussäteen määrittämiseen. Monikerroksisiin PEDOT:PSS rakennemittauksiin perustuen ST-menetelmä näyttäisi soveltuvan myös ohutkalvojen paksuuksien määrittämiseen. ST-menetelmä yhdistettynä automaattiseen mittaustiedon prosessointiin on yksinkertainen menetelmä paikallistamaan pieniä virheitä suuripinta-alaisilla näytteillä. Tämä lähestymistapa avaa uusia mittausmahdollisuuksia teollisuuden tuotantoprosesseihin.

This diploma thesis addresses the processing of project documentation for construction of four storey mixed-use bouilding with partial basement in Velké Opatovice. The building is designed on flat terrain. In the basement are located technical utilities of the building and three cellar cubicles. On the first floor there is a beer-shop, textile shop and design office. On the second floor there is an office space for local company. The thrid floor is designed as two large-area apartments with terraces. The fourth floor is designed as one large-area apartment with terraces.

The stacking of membrane electrode assemblies (MEA) and bipolar plates is a key process in fuel cell stack production, in which requirements for high accuracy and shortest possible process time must be taken into account. In this paper technical systems for fuel cell stack assembly are analysed regarding means for handling, gripping and alignment of the components. The different methods are compared and evaluated, followed by a novel system allowing for an on-the-fly measurement of the position / Das Stapeln von Membran-Elektroden-Einheiten (MEA) und Bipolarplatten ist ein Schlüsselprozess in der Brennstoffzellen-Stack-Produktion, bei dem die Anforderungen an eine hohe Genauigkeit und eine möglichst kurze Prozesszeit berücksichtigt werden müssen. In diesem Beitrag werden technische Systeme für die Montage von Brennstoffzellenstapeln hinsichtlich der Handhabung, des Greifens und der Ausrichtung der Komponenten analysiert. Die verschiedenen Methoden werden verglichen und bewertet, gefolgt von einem neuartigen System, das eine on-the-fly Messung der Position ermöglicht.

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Organic semiconductor technology has gained attention in both the sensor and display markets due to its low cost and simple fabrication techniques. The ability to fabricate organic semiconductor devices such as photodetectors and transistors on a flexible, lightweight substrate makes them less fragile and ideal candidates for portable large-area imaging applications. The use of organic semiconductor technology in large-area medical imaging can bring about a new generation of flexible and lightweight indirect X-ray imagers. These imagers are immune to mechanical shock and should be ideal for portable intraoral X-ray radiology. In order to realize these organic flexible imagers and their use in large-area medical imaging, many challenges associated with the device performance and fabrication need to be overcome. Among these challenges, one of the greatest is to improve the dark current performance of the organic semiconductor photodetectors (key for imager performance) with a high-photo to-dark current ratio. Low dark current is needed to improve the sensitivity of the imager, whereas a large photo-to-dark current ratio reduces noise in the extracted image. Numerous techniques have been reported to improve the dark current performance in vertical organic photodetector design; however, lateral photodetectors still lack research attention. This thesis presents a lateral multilayer photodetector design and a simplified technique to improve the dark current performance of lateral organic semiconductor photodetectors. Our technique allows us to apply a large bias voltage while maintaining a low dark current, high photo-to-dark current ratio, and improves detector speed; thus, the overall sensitivity of the detector is improved. We further show the integration of an organic photodetector with an organic backplane readout circuit to form a flexible large-area imager. This imager can be used for large-area digital imaging applications such as in medical radiology.

Afin d’obtenir une approche où l’aspect industriel du projet est soutenu par les connaissances académiques et les capacités analytiques du monde de la recherche, ce travail portant sur les cellules photovoltaïques organiques souples grande surface commence par décrire l’énergie photovoltaïque dans son ensemble. Les tenants et aboutissants de son développement sont détaillés, ainsi que ses filières technologiques. Les semi-conducteurs organiques, les mécanismes physiques mis en jeu dans la production d’électricité d’origine photovoltaïque et les grandeurs électriques associées aux cellules photovoltaïques organiques ainsi que les différentes structures de celles-ci sont ensuite présentés. Les dispositifs réalisés dans le cadre de ce travail sur les cellules photovoltaïques organiques sont présentés. Les différentes techniques de dépôt de couches minces, aussi bien celles permettant la production en masse que celles permettant la production à plus petite échelle sont présentées. Cette présentation s’accompagne d’une recherche qui se veut exhaustive des publications relatant l’utilisation des ces techniques d’impression afin de créer des dispositifs photovoltaïques organiques. Une comparaison de ces différentes techniques est menée afin de déterminer les modes de production pertinents. Une étude bibliographique complète menée sur les cellules « grande surface » est présentée. Les cellules et modules réalisés grâce au procédé pilote d’enduction par héliogravure sont ensuite présentés. Le travail réalisé sur un autre procédé, le « doctor blade », est ensuite exposé. Enfin, la problématique du séchage et du recuit des couches minces déposées en continu est posée, et le traitement micro-onde proposé comme solution. / To obtain an approach where the industrial aspect of the project is supported by academic knowledge and the analytical capacities of research, this work concerning the large area flexible organic solar cells begins by describing the photovoltaic energy in general. The ins and outs of its development are detailed, as well as the different technologies involved. The organic semiconductors, the physical mechanisms involved in the photovoltaic electricity production and the physical values attached to the organic solar cells as well as the various structures of these cells are then presented. Devices realized within the framework of this work are then presented. The various techniques of depositing thin layers allowing the mass production as well as those allowing the smaller-scale production are presented. This presentation comes along with an exhaustive research of the publications telling the use of these techniques of printing to create organic photovoltaic devices. A comparison of those various techniques is led to determine the relevant means of production. A complete bibliographical study led on large area organic solar cells is presented. Cells and modules realized thanks to the experimental process of heliogravure coating are then presented. The work realized with another process called doctor blade is then exposed. Finally, the problem of the drying and annealing of the thin layers deposited continuously is raised, and the microwave treatment proposed as a possible solution.

The methods of analysis with a focused ion beam, commonly termed as nuclear microscopy, include quantitative physical processes like PIXE and RBS. The element concentrations in a sample can be quantitatively mapped with a sub-micron spatial resolution and a sub-ppm sensitivity. Its fully quantitative and non-destructive nature makes it particularly suitable for analysing biological samples. The applications in biomedical research are manifold. The iron overload hypothesis in Parkinson\\\'s disease is investigated by a differential analysis of human substantia nigra. The trace element content is quantified in neuromelanin, in microglia cells, and in extraneuronal environment. A comparison of six Parkinsonian cases with six control cases revealed no significant elevation in iron level bound to neuromelanin. In fact, a decrease in the Fe/S ratio of Parkinsonian neuromelanin was measured, suggesting a modification in its iron binding properties. Drosophila melanogaster, or the fruit fly, is a widely used model organism in neurobiological experiments. The electrolyte elements are quantified in various organs associated with the olfactory signalling, namely the brain, the antenna and its sensilla hairs, the mouth parts, and the compound eye. The determination of spatially resolved element concentrations is useful in preparing the organ specific Ringer\\\'s solution, an artificial lymph that is used in disruptive neurobiological experiments. The role of trace elements in the progression of atherosclerosis is examined in a pilot study. A differential quantification of the element content in an induced murine atherosclerotic lesion reveals elevated S and Ca levels in the artery wall adjacent to the lesion and an increase in iron in the lesion. The 3D quantitative distribution of elements is reconstructed by means of stacking the 2D quantitative maps of consecutive sections of an artery. The feasibility of generating a quantitative elemental rodent brain atlas by Large Area Mapping is investigated by measuring at high beam currents. A whole coronal section of the rat brain was measured in segments in 14 h. Individual quantitative maps of the segments are pieced together to reconstruct a high-definition element distribution map of the whole section with a subcellular spatial resolution. The use of immunohistochemical staining enhanced with single elements helps in determining the cell specific element content. Its concurrent use with Large Area Mapping can give cellular element distribution maps.