This work presents the design of two compact multi-standard low-noise amplifier (LNA) in a 28 nm low-power bulk CMOS process. The transistor parameters were optimized by the Gₘ/ID method taking into account the parasitics and the behavior of highly scaled transistors. To cover the industrial science medical (ISM)-bands around 2.4 and 5.8 GHz, the WLAN band as well as the Kᵤ band a bandwidth enhancement is required. Two versions of LNAs, one with vertical inductors and one with active inductors, are implemented and verified by measurements. The noise figure (NF) exhibits 4.2 dB for the LNA with active inductors and 3.5 dB for the LNA with vertical inductors. The voltage gain reaches 12.8 and 13.4 dB, respectively, with a 3 dB-bandwidth of 20 GHz. Both input referred 1-dB-compression points are higher than 212 dBm making the chips attractive for communication standards with high linearity requirements. The chips consume 53 mW DC power and the LNA with active inductors occupies a core area of only 0.0018 mm², whereas the version with vertical inductors requires 0.021 mm².

The work presents a novel voltage biasing design that helps the CMOS RF circuits resilient to variability and reliability. The biasing scheme provides resilience through the threshold voltage (VT) adjustment, and at the mean time it does not degrade the PA performance. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. Power Amplifier (PA) and Low Noise Amplifier (LNA) are investigated case by case through modeling and experiment. PTM 65nm technology is adopted in modeling the transistors within these RF blocks. A traditional class-AB PA with resilient design is compared the same PA without such design in PTM 65nm technology. Analytical equations are established for sensitivity of the resilient biasing under various scenarios. A traditional class-AB PA with resilient design is compared the same PA without such design in PTM 65nm technology. The results show that the biasing design helps improve the robustness of the PA in terms of linear gain, P1dB, Psat, and power added efficiency (PAE). Except for post-fabrication calibration capability, the design reduces the majority performance sensitivity of PA by 50% when subjected to threshold voltage (VT) shift and 25% to electron mobility (μn) degradation. The impact of degradation mismatches is also investigated. It is observed that the accelerated aging of MOS transistor in the biasing circuit will further reduce the sensitivity of PA. In the study of LNA, a 24 GHz narrow band cascade LNA with adaptive biasing scheme under various aging rate is compared to LNA without such biasing scheme. The modeling and simulation results show that the adaptive substrate biasing reduces the sensitivity of noise figure and minimum noise figure subject to process variation and iii device aging such as threshold voltage shift and electron mobility degradation. Simulation of different aging rate also shows that the sensitivity of LNA is further reduced with the accelerated aging of the biasing circuit. Thus, for majority RF transceiver circuits, the adaptive body biasing scheme provides overall performance resilience to the device reliability induced degradation. Also the tuning ability designed in RF PA and LNA provides the circuit post-process calibration capability.

Στη διατριβή αυτή προτείνονται, αναλύονται και υλοποιούνται εναλλακτικές τοπολογίες για δυο από τα κύρια υποσυστήματα ενός πομποδέκτη, τον τοπικό ταλαντωτή και τον ενισχυτή χαμηλού θορύβου. Το κύριο σύστημα που εξετάζεται είναι αυτό του τοπικού ταλαντωτή, όπου μελετούνται και υλοποιούνται τοπολογίες ταλαντωτών και βρόχων που λειτουργούν υπό εμβολή, με κύριο προσανατολισμό την ελαχιστοποίηση του θορύβου φάσης. Ο προτεινόμενος βρόχος εμβολής προσφέρει την δυνατότητα χρησιμοποίησής του σε multiband συστήματα με ταυτόχρονη μάλιστα λειτουργία στις ζώνες των 2.4 GHz και 5.2 GHz για την περίπτωση των ασύρματων τοπικών δικτύων. Ένας τέτοιος βρόχος μπορεί να συμβάλει καθοριστικά στην ελαχιστοποίηση του μεγέθους και της κατανάλωσης του συνολικού multiband συστήματος. Προτείνεται και υλοποιείται ένας ταλαντωτής εμβολής (injection-locked oscillator) και διερευνάται η δυνατότητά του να λειτουργεί παράλληλα και ως μίκτης δίνοντας ένα κύκλωμα πολλαπλών λειτουργιών και εφαρμογών. Το κύκλωμα αυτό ανάλογα με τα σήματα που εμφανίζονται στην είσοδό του λειτουργεί ως απλός ταλαντωτής, ως ταλαντωτής εμβολής, ή ως ίδιο-ταλαντούμενος μίκτης. Προτείνεται και υλοποιείται βρόχος εμβολής (injection-locked phase-locked loop, ILPLL) και μελετάται η βελτίωση στον θόρυβο φάσης και την περιοχή κλειδώματος. Στα πλαίσια των ILPLL μελετώνται και υλοποιούνται βρόχοι εμβολής στην θεμελιώδη συχνότητα και βρόχοι υπό-αρμονικής (sub-harmonic) εμβολής (s-ILPLL). Ο βρόχος υπό-αρμονικής εμβολής χρησιμοποιεί σήμα εμβολής στα 2.5 GHz και παράγει συχνότητα εξόδου 5 GHz. Στα πλαίσια της διερεύνησης του θορύβου φάσης σε συστήματα τοπικών ταλαντωτών μελετάται η διάταξη του συνθέτη διπλού βρόχου και αναπτύσσεται μία πρωτότυπη τοπολογία με καλύτερα χαρακτηριστικά στον θόρυβο φάσης σε σύγκριση με τις κλασικές αρχιτεκτονικές διπλού βρόχου. Σε όλες τις παραπάνω διατάξεις, παρουσιάζονται, η μαθηματική ανάλυση για τον θόρυβο φάσης και τα αποτελέσματα των θεωρητικών υπολογισμών. Η ορθότητα των προτάσεων και η λειτουργία των προτεινόμενων διατάξεων επαληθεύεται με μετρήσεις των πειραματικών πρωτοτύπων. Τέλος, στα πλαίσια της διατριβής προτείνεται ένας ενισχυτής χαμηλού θορύβου που περιλαμβάνει κύκλωμα ελέγχου του κέρδους, το οποίο δίνει την δυνατότητα στο σύστημα να «επιλέξει» την επιθυμητή ενίσχυση ανάλογα με τις συνθήκες, μειώνοντας έτσι σημαντικά την κατανάλωση σε περιπτώσεις όπου αυτό είναι δυνατό. Περιλαμβάνει επίσης και φίλτρο απόρριψης ειδώλου που ελέγχεται από εξωτερική τάση συντονισμού. / In this dissertation we propose, study and develop alternative topologies for two of the most important blocks of a Front-End, the Local Oscillator and the Low Noise Amplifier. We are mainly concerned with the analysis of various local oscillator topologies, studying the phase noise and the injection-locking performance of oscillators and phase-locked loops. The overall performance of the experimental design demonstrates the applicability of the proposed approach to the development of dual-band synthesizers (2.4 GHz and 5.2 GHz), which constitute very important subsystems for modern multiband/multistandard transceivers in WLAN applications. We propose and develop an injection locked oscillator (ILO) and investigate the ability to operate simultaneously as a mixer resulting in a multifunctional circuit. The proposed circuit topology operates as: a) a free-running oscillator, b) both an injection-locked oscillator and a subharmonic injection-locked oscillator (s-ILO), c) both a self-oscillating mixer and a harmonic self-oscillating mixer (h-SOM), and d) a subharmonic injection-locked self-oscillating mixer (s-ILSOM). We propose and develop a different approach for ILPLL design at 5 GHz by applying a technique used in optical communications. We newly address the phase-noise analysis using the loop linear model and compare the results with previously reported work. Furthermore, we address the phase noise improvement of subharmonic ILPLLs, especially for the 5-GHz band. Theoretical analysis and computer calculations demonstrate an improved performance for phase noise and power consumption. We present the analysis and experimental evaluation of a modified dual-loop phase locked loop synthesizer, using the phase noise transfer functions resulting from the linear model of the synthesizer. The different arrangement in the high frequency loop, in contrast to previous reported series-connected dual-loop topologies, offers various advantages, such as improved phase noise, finer resolution and lower spurious levels. Discrete elements are used to implement a prototype system for testing. This adds to the flexibility of the design and allows for experimental optimisation of the loop trade-offs. The synthesizer generates signals in the 4850 MHz to 5050 MHz range with a 10 MHz resolution and can match the specifications for wireless LANs operating at 5 GHz. The design resulted in a prototype with very good characteristics suitable for future integration. For all the proposed topologies we present the mathematical analysis and calculated results for the phase noise. Measurement results illustrate the validity of the proposed analyses, demonstrate the main characteristics, and confirm the feasibility of the proposed systems. Finally, a bipolar Low Noise Amplifier (LNA) is designed in this thesis. The IC contains the LNA core, an externally programmed bias network and an image rejection filter. The externally programmed bias network allows the user to select the bias current in an adaptive manner, depending upon the requirements of the individual system. (Low NF, high gain, low consumption etc). Furthermore, the chip can be powered down by sending an appropriate bit stream to the bias network.

Ce travail de thèse a pour objectif principal d'améliorer la sensibilité d'un micro-récepteur RMN implantable, utilisé dans le cadre de la micro-spectroscopie localisée in vivo. Dans la première partie de cette thèse, nous avons réexaminé la fabrication et modélisation de ce micro-récepteur par rapport à sa sensibilité. Parmi les deux procédés de fabrication proposés (électrodéposition du micro-récepteur avec un underpass sur un substrat de silicium et de verre), nous avons retenu celui-qui nous a permis d'obtenir les meilleures performances en termes de facteur de qualité. Les prototypes fabriqués avec ce procédé ont été caractérisés à l'aide d'un modèle que nous avons développé, basé sur une équation à coefficients polynomiaux. Ceux-ci ont été établis à partir de la simulation du layout du capteur et ont été réajustés en fonction des mesures. Ce modèle polynomial nous a conduits à un circuit équivalent du micro-récepteur, permettant d'approfondir l'étude de son comportement électrique en radio fréquences. La deuxième partie de ce travail est développée autour de l'association d'un amplificateur faible bruit (LNA) au plus près du micro-récepteur, afin d'améliorer sa sensibilité. Nous avons analysé l'état de l'art de l'amplification de micro-bobines RMN ainsi que l'interaction électromagnétique entre un circuit intégré et l'environnement RMN. En partant de cette analyse et des contraintes à remplir par le circuit d'adaptation (en termes de transmission de puissance, gain en tension et adaptation faible bruit), nous avons proposé un circuit d'amplification locale permettant d'améliorer la sensibilité du capteur. Nous avons validée notre démarche par simulation (avec notre micro-récepteur) et nous avons vérifié l'intérêt de celle-ci en RMN (avec une bobine de surface). Les résultats de ce travail nous ont permis d'établir des solutions concrètes pour atteindre la sensibilité nécessaire à nos applications / The aim of this thesis is to improve the sensitivity of an implantable micro NMR sensor, dedicated to the in vivo local micro-spectroscopy. In the first part of this thesis, we re-examined the design and modeling of this micro-sensor according to its sensitivity. We proposed two micromachining processes (electrodeposition of the micro-sensor with an underpass on a silicon and glass substrate) and we kept the one allowing the higher quality factor. The prototypes made with the chosen process were characterized thanks to a model that we developed, based in an equation with polynomial coefficients. These coefficients were determined from the layout of the sensor and were adapted to match the measurements. From this polynomial model, we proposed an equivalent circuit of the micro-sensor to have a better knowledge of its electrical behavior at high frequencies. The second part of this work is about the closer association of a low noise amplifier (LNA) with the micro-sensor to improve its sensitivity. We analyzed the state of art on the amplification of NMR micro-coils and the electromagnetic interaction between the integrated circuits ant the NMR environment. From this analysis and the conditions of the matching network (power transmission, voltage gain and low noise matching), we proposed a local amplification circuit achieving the sensitivity improvement of the sensor. This approach was validated by simulation (with our micro-sensor) and verified in an NMR system (with a surface coil). The results of this work allow us to set practical solutions to reach the required sensitivity of our applications

This letter presents a scalable technique to reduce the power of the analog input stage in neural recording front-ends in Globalfoundries 22 -nm FDSOI. The back-gate voltages are adapted to reduce the threshold voltage and thus allow supply voltage reduction. This adaption increases PVT stability of subthreshold circuits. A comparison to a conventional delta–sigma ADC is drawn and the minimum power point is measured, resulting in 0.7 - μW /channel at 7.2 - μV input-referred noise. Additionally, the transition to smaller technologies promises low-power consumption in the digital domain, by allowing smaller supply voltage and higher integration density.

Chronic recording of neural signals is indispensable in designing efficient brain machine interfaces and to elucidate human neurophysiology. The advent of multi-channel micro-electrode arrays has driven the need for electronic store cord neural signals from many neurons. The continuous increase in demand of data from more number of neurons is challenging for the design of an efficient neural recording frontend(NRFE). Power consumption per channel and data rate minimization are two key problems which need to be addressed by next generation of neural recording systems. Area consumption per channel must be low for small implant size. Dynamic range in NRFE can vary with time due to change in electrode-neuron distance or background noise which demands adaptability. In this thesis, techniques to reduce power-per-channel and area-per-channel in a NRFE, via new circuits and architectures, are proposed. An area efficient low power neural LNA is presented in UMC 0.13 μm 1P8M CMOS technology. The amplifier can be biased adaptively from 200 nA to 2 μA , modulating input referred noise from 9.92 μV to 3.9μV . We also describe a low noise design technique which minimizes the noise contribution of the load circuitry. Optimum sizing of the input transistors minimizes the accentuation of the input referred noise of the amplifier. It obviates the need of large input coupling capacitance in the amplifier which saves considerable amount of chip area. In vitro experiments were performed to validate the applicability of the neural LNA in neural recording systems. ADC is another important block in a NRFE. An 8-bit SAR ADC along with the input and reference buffer is implemented in 0.13 μm CMOS technology. The use of ping-pong input sampling is emphasized for multichannel input to alleviate the bandwidth requirement of the input buffer. To reduce the output data rate, the A/D process is only enabled through a proposed activity dependent A/D scheme which ensures that the background noise is not processed. Based on the dynamic range requirement, the ADC resolution is adjusted from 8 to 1 bit at 1 bit step to reduce power consumption linearly. The ADC consumes 8.8 μW from1Vsupply at1MS/s and achieves ENOB of 7.7 bit. The ADC achieves FoM of 42.3 fJ/conversion in 0.13 μm CMOS technology. Power consumption in SARADCs is greatly benefited by CMOS scaling due to its highly digital nature. However the power consumption in the capacitive DAC does not scale as well as the digital logic. In this thesis, two energy-efficient DAC switching techniques, Flip DAC and Quaternary capacitor switching, are proposed to reduce their energy consumption. Using these techniques, the energy consumption in the DAC can be reduced by 37 % and 42.5 % compared to the present state-of-the-art. A novel concept of code-independent energy consumption is introduced and emphasized. It mitigates energy consumption degradation with small input signal dynamic range.