<p>The detection of MWIR (mid wavelength infrared radiation) is the important for industrial, biomedical and military applications.desirable for the radiation detector to operate in the middle wavelength IR (MWIR) band corresponding to a wavelength band ranging from about 3 microns to about 5 microns.Such MWIR detectors allow forobjects having a similar thermal signature. In addition, MWIR detectors may be used in low power applications such as in night vision for surveillance of personnel.</p><p>Now a day commercially available uncooled IR sensors operating in MWIR region (2 – 5 μm) use microbolometric detectors which are inherently slow. The novel detector of InAs/GaSb quantum well structures overcomes this limitation. However, third-generation high-performance IR  FPAs are already an attractive proposition to the IR system designer. They covered such as multicolour (at least two, and maybe more different spectral bands) with the possibility of simultaneous detection in both space and time, and ever larger sizes of, say, 2000 × 2000, and operating at higher temperatures, even to room temperature, for all cut-off wavelengths.These hetero structures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb layer. The effective bandgap of thesestructures can be adjusted from 0.4 eV to values below 0.1 eV by varying the thickness of constituent layers leading to an enormous range of detector cutoff wavelengths (3-20 This work is focused on the various key characteristics the optical (responsivity and detectivity) and electrical (surface leakage & dark current) of infrared detector and proof of concept is demonstrated on infrared P-I-N photodiodes based on InAs/GaSb superlattices with ~8.5 μm cutoff wavelength and bandgap energy ~150 meV operating at 78 K where supression of surface leakage currents is observed. In certain military applications, it isthermal imaging of airplanes, artillery tanks and otherμm).</p> / Nice research work at Halmstad University

Quantum Well Infrared Photodetector (QWIP) technology is promising for the development of large format low cost single and dual/multi color infrared sensor arrays. Thanks to the mature III-V semiconductor technology, QWIP focal plane arrays (FPAs) provide high uniformity and excellent noise equivalent temperature difference (NETD) in both long wavelength infrared (LWIR 8-12 &amp / #61549 / m) and mid wavelength infrared (MWIR 3-5 &amp / #61549 / m) bands. This thesis work focuses on the development of large format single and dual color MWIR QWIP FPAs. For single band MWIR detection, we report QWIP FPAs on InP substrate as an alternative to the GaAs based MWIR QWIPs suffering from the degrading effects of lattice mismatched epitaxy. In the course of this work, epitaxial growth conditions of the device structure were optimized and 640&times / 512 AlInAs/InGaAs QWIP FPAs on InP substrate have been fabricated yielding NETD of 22 mK (f/1.5) and background limited performance (BLIP) temperature as high as 115 K In the second part, we report the first voltage tunable 640&times / 512 dual color MWIR QWIP FPA. After optimizing epitaxial growth of AlGaAs/InGaAs material system, we have designed and implemented the device structure to yield voltage tunable spectral response in two different windows in the MWIR band. The FPA provides NETDs of 60 and 30 mK (f/1.5) in colors 1 and 2. The results are very encouraging for the development of low cost dual/multi color FPAs since our approach utilizes one In bump per pixel allowing fabrication of dual color FPAs with the same process steps for single color FPAs.

The detection of MWIR (mid wavelength infrared radiation) is the important for industrial, biomedical and military applications.desirable for the radiation detector to operate in the middle wavelength IR (MWIR) band corresponding to a wavelength band ranging from about 3 microns to about 5 microns.Such MWIR detectors allow forobjects having a similar thermal signature. In addition, MWIR detectors may be used in low power applications such as in night vision for surveillance of personnel. Now a day commercially available uncooled IR sensors operating in MWIR region (2 – 5 μm) use microbolometric detectors which are inherently slow. The novel detector of InAs/GaSb quantum well structures overcomes this limitation. However, third-generation high-performance IR  FPAs are already an attractive proposition to the IR system designer. They covered such as multicolour (at least two, and maybe more different spectral bands) with the possibility of simultaneous detection in both space and time, and ever larger sizes of, say, 2000 × 2000, and operating at higher temperatures, even to room temperature, for all cut-off wavelengths.These hetero structures have a type-II band alignment such that the conduction band of InAs layer is lower than the valence band of GaSb layer. The effective bandgap of thesestructures can be adjusted from 0.4 eV to values below 0.1 eV by varying the thickness of constituent layers leading to an enormous range of detector cutoff wavelengths (3-20 This work is focused on the various key characteristics the optical (responsivity and detectivity) and electrical (surface leakage &amp; dark current) of infrared detector and proof of concept is demonstrated on infrared P-I-N photodiodes based on InAs/GaSb superlattices with ~8.5 μm cutoff wavelength and bandgap energy ~150 meV operating at 78 K where supression of surface leakage currents is observed. In certain military applications, it isthermal imaging of airplanes, artillery tanks and otherμm). / <p>Nice research work at Halmstad University</p>

Quantum Well Infrared Photodetectors (QWIPs) are strong competitors to other detector technologies for future third generation thermal imagers. QWIPs have inherent advantages of mature III-V material system and well settled fabrication technology, as well as narrow band photo-response which is an important property facilitating the development of dual-band imagers with low crosstalk. This thesis focuses on the development of long/mid wavelength dual band QWIP focal plane arrays (FPAs) based on the AlGaAs/GaAs material system. Apart from traditional single band QWIPs, the dual-band operation is achieved by proper design of a bias tunable quantum well structure which has two responsivity peaks at 4.8 and 8.4 um for midwave infrared (MWIR) and longwave infrared (LWIR) atmospheric windows, respectively. The fabricated large format (640x512) FPA has MWIR and LWIR cut-off wavelengths of 5.1 and 8.9 um, and it provides noise equivalent temperature differences (NETDs) of ~ 20 and 32 mK (f/1.5 at 65 K) in these bands, respectively. The employed bias tuning approach for the dual-band operation requires the same fabrication steps established for single band QWIP FPAs, which is an important advantage of the selected method resulting in high-yield, high-uniformity and low-cost. Results are encouraging for fabrication of low cost, large format, and high performance dual band FPAs, making QWIP a stronger candidate in the competition for third generation thermal imagers

Excellent uniformity and mature material properties of Quantum Well Infrared Photodetectors (QWIPs) have allowed the realization of large format, low cost staring focal plane arrays (FPAs) in various thermal imaging bands. AlGaAs/InGaAs and AlGaAs/GaAs materials systems have been the standard systems for the construction of mid-wavelength infrared (MWIR) and long-wavelength (LWIR) QWIPs. However AlGaAs/GaAs QWIP FPAs suffer from low quantum and conversion efficiencies under high frame rate (low integration time) and/or low background conditions limiting the application area of standard QWIPs. This thesis focuses on the growth and development of InP based single and dual band QWIP FPAs. We experimentally demonstrate that QWIPs on InP substrates provide important advantages that can be utilized to overcome the bottlenecks of the standard GaAs based QWIP technology. InP/InGaAs material system is an alternative to AlGaAs/GaAs for LWIR QWIPs. We demonstrate a large format (640x512) LWIR QWIP FPA constructed with strained InP/InGaAs material system. The strain introduced to the structure shifts the cut-off wavelength from ~8.5 to 9.7 &micro / m with lambdap=8.9 &micro / m. The FPA fabricated with the 40-well epilayer structure yielded a peak quantum efficiency as high as 12% with a broad spectral response (&amp / #8710 / lambda/lambdap=17%). The peak responsivity of the FPA pixels is larger than 1.4 A/W with conversion efficiency as high as 20% in the bias region where the detectivity is reasonably high (2.6x1010 cmHz1/2/W, f/1.5, 65 K). The FPA providing a background limited performance temperature higher than 65 K (f/1.5) satisfies the requirements of most low integration time/low background applications where AlGaAs/GaAs QWIPs cannot be utilized due to low conversion efficiency and read-out circuit noise limited sensitivity. Noise equivalent temperature differences (NETD) of the FPA are as low as 19 and 40 mK with integration times as short as 1.8 ms and 430 &micro / s (f/1.5, 65 K), respectively. We also experimentally demonstrate that the cut-off wavelength of MWIR AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ~5.0 &micro / m with a QW width of 22 &Aring / in which case very broad spectral response (&amp / #8710 / lambda/lambdap=~30%) and a reasonably high peak detectivity is achievable leading to a NETD as low as 14 mK (f/2) with 25 &micro / m pitch in a 640x512 FPA. The advantages of InP based MWIR and LWIR single band QWIPs were combined by growing and fabricating a mid format (320x256) dual band QWIP FPA. The FPA provided NETD (f/1.5, 65 K, 19 ms) values of 27 mK and 29 mK in the MWIR and LWIR modes with an impressively low DC signal nonuniformity of ~ 4%. The results clearly demonstrate that InP based material systems display high potential for MWIR and LWIR single band and MWIR/LWIR dual band QWIP FPAs needed by third generation thermal imagers by overcoming the limitations of the standard GaAs based QWIPs under high frame rate (low integration time) and/or low background conditions.

abstract: This work demonstrates novel nBn photodetectors including mid-wave infrared (MWIR) nBn photodetectors based on InAs/InAsSb type-II superlattices (T2SLs) with charge as the output signal, and visible nBn photodetectors based on CdTe with current output. Furthermore, visible/MWIR two-color photodetectors (2CPDs) are fabricated through monolithic integration of the CdTe nBn photodetector and an InSb photodiode. The MWIR nBn photodetectors have a potential well for holes present in the barrier layer. At low voltages of < −0.2 V, which ensure low dark current <10-5 A/cm2 at 77 K, photogenerated holes are collected in this well with a storage lifetime of 40 s. This charge collection process is an in-device signal integration process that reduces the random noise significantly. Since the stored holes can be readout laterally as in charge-coupled devices, it is therefore possible to make charge-output nBn with much lower noise than conventional current-output nBn photodetectors. The visible nBn photodetectors have a CdTe absorber layer and a ZnTe barrier layer with an aligned valence band edge. By using a novel ITO/undoped-CdTe top contact design, it has achieved a high specific detectivity of 3×1013 cm-Hz1/2/W at room temperature. Particularly, this CdTe nBn photodetector grown on InSb substrates enables the monolithic integration of CdTe and InSb photodetectors, and provides a platform to study in-depth device physics of nBn photodetectors at room temperature. Furthermore, the visible/MWIR 2CPD has been developed by the monolithic integration of the CdTe nBn and an InSb photodiode through an n-CdTe/p-InSb tunnel junction. At 77 K, the photoresponse of the 2CPD can be switched between a 1-5.5 μm MWIR band and a 350-780 nm visible band by illuminating the device with an external light source or not, and applying with proper voltages. Under optimum conditions, the 2CPD has achieved a MWIR peak responsivity of 0.75 A/W with a band rejection ratio (BRR) of 52 dB, and a visible peak responsivity of 0.3 A/W with a BRR of 18 dB. This 2CPD has enabled future compact image sensors with high fill-factor and responsivity switchable between visible and MWIR colors. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2016

This dissertation details the development of the world’s first cryogenically cooled Fe:ZnSe-based chirped pulse amplifier, a mid-wave infrared source for strong-field physics experimentation. The long upper-state lifetime provided by cryogenically cooling the Fe:ZnSe gain medium allows free-running, diode-pumped Er:YAG lasers to be used as pump lasers. The amplifier is seeded by a novel two-stage optical parametric amplifier pumped at 1 μm, which is potentially carrier-envelope phase-stable. The system is capable of producing 247-fs pulses at 333 Hz and 4.6 mJ with a center wavelength of 4.07 μm, although exact characteristics vary for different repetition rates and arrangements. The spectral bandwidth avoids strong atmospheric CO2 absorption centered around 4.3 μm, allowing operation in ambient air with good beam quality. The laser is simple, stable, reliable, and boasts a high repetition rate and average power compared to other systems. By focusing the 18-GW beam in air, harmonics up to the ninth order were observed indicating its potential for use in strong-field experimentation. Few-cycle pulses were generated by passing the beam, at a repetition rate of 400 Hz, through a large-diameter gas-filled hollow-core fiber followed by dispersion compensating bulk CaF2. A krypton-filled fiber at 370 kPa yielded 1.14-mJ, 42-fs pulses centered at 4.07-μm, while an oxygen-filled fiber at 310 kPa delivered 0.78-mJ, 39-fs pulses spanning 3 to 5.5 μm. This work is a step toward a high repetition rate mid-wave infrared driver of isolated attosecond, keV-level, X-ray pulses. Fe:ZnSe is a unique gain medium with potential to become a disruptive technology across a variety of fields, especially in strong-field science, in which many physical phenomena are enhanced at longer wavelengths.

Measurements of process variations and particle morphology are widely employed in the pulp and paper industry. Two techniques with high potential, infrared thermography and microparticle characterisation, are mainly used qualitatively. Quantitative thermography requires knowledge of the emittance, a material property which has not been measured under many process-relevant conditions. Quantitative characterisation of microparticles, e.g. pulp fines and mineral fillers, requires the analysis of a large number of particles, which can be accomplished using flow microscopes. Flow microscopes for pulp analysis have had insufficient spatial resolution to resolve fines and fillers. Additionally, there has been a lack of methods which can differentiate between fines and fillers in a mixed suspension. State-of-the-art instruments for particle image analysis were evaluated and compared to laser diffractometry, a measurement method based on scattering by diffraction. Laser diffractometry was found to be highly sensitive to the complex refractive index of the particles, and especially to its change due to moisture absorption. A high-resolution imaging flow cytometer and a high-resolution fibre analyser were found to be complementary for characterisation of pure fines and fines/filler mixtures, and superior to laser diffractometry. A method for differentiating between fines and fillers in a suspension based on their autofluorescence and side-scattering was proposed and qualitatively evaluated. Furthermore, a method for measuring the directional and integrated emittance of paper was developed and its accuracy was determined. Measurements on a wide range of samples showed that the emittance of fibre-based materials vary significantly with wavelength, pulp type, observation angle, and moisture content. By applying measured quantitative values of the emittance, the thermal energy emitted by sack paper samples during mechanical deformation could be quantitatively calculated. The increase in thermal energy at the time of rupture was found to correlate well with the elastic share of the mechanical energy that was stored in the sample during its elongation. In summary, the results of this work have facilitated the use of quantitative microparticle analysis and infrared thermography for pulp and paper applications. / Mätningar av processvariationer och partiklars form och storlek utförs i stor skala inom massa- och pappersindustrin. Två mättekniker med stor potential, infraröd termografi och mikropartikel-karaktärisering, används mest kvalitativt idag. Kvantitativ termografi kräver att provets emittans är känd. Emittansen är en materialegenskap som inte har mätts för många förhållanden som är relevanta inom papperstillverkning. Kvantitativ karaktärisering av partiklar kräver att ett tillräckligt stort antal partiklar analyseras, något som kan göras med flödesmikroskop. Flödesmikroskop för mäldanalys har haft otillräcklig upplösning för att karaktärisera mikrometerstora partiklar, t.ex. fines och fyllmedel. Det har heller inte funnits någon metod som kan särskilja mellan fines och fyllmedel i en blandning. Högupplösta mätinstrument för bildbaserad mikropartikelkaraktärisering utvärderades och jämfördes med en laserdiffraktometer, en mätmetod baserad på ljusspridning genom diffraktion. Laserdiffraktometerns mätresultat påverkades starkt av det brytningsindex som antogs för provet, och hur brytningsindexet ändrades med fukthalt. En högupplöst bildbaserad flödescytometer och en högupplöst fibermätare konstaterades komplettera varandra vid mätningar av mäldens finmaterial. De var även pålitligare än laserdiffraktometern vid mätningar av organiskt finmaterial. En metod för att skilja mellan organiskt och oorganiskt finmaterial i en mäld baserat på deras autofluorescens och ljusspridning presenterades och utvärderades kvalitativt. En metod för att mäta den vinkelberoende och våglängdsintegrerade emittansen hos fiberbaserade material utvecklades och dess mätnoggrannhet utvärderades. Mätningar på ett stort antal prover visade att emittansen varierade betydligt med våglängd, mäldtyp, observationsvinkel, och fukthalt. Genom att använda den uppmätta emittansen kunde den termiska energin som frigjordes av ett säckpappersprov vid brottögonblicket beräknas. Denna energi korrelerade väl med den elastiska energi som lagrades i provet medan det töjdes, fram till tidpunkten för brottet. Sammanfattningsvis har resultaten av detta arbete möjliggjort kvantitativ användning av mikropartikel-karaktärisering och infraröd termografi i massa- och papperstillämpningar. / <p>QC 20160122</p>

Thermography is a non-destructive technique which uses infrared radiation to obtain the temperature distribution of an object. The technique is increasingly used in the pulp and paper industry. To convert the detected infrared radiation to a temperature, the emittance of the material must be known. For several influencing parameters the emittance of paper and board has not previously been studied in detail. This is partly due to the lack of emittance measurement methods that allow for studying the influence of these parameters. An angle-resolved goniometric method for measuring the infrared emittance of a material was developed in this thesis. The method is based on the reference emitter methodology, and uses commercial infrared cameras to determine the emittance. The method was applied to study the dependence on wavelength range, temperature, observation angle, moisture ratio, sample composition, and sample structure of the emittance of paper and board samples. It was found that the emittance varied significantly with wavelength range, observation angle and moisture ratio. The emittance was significantly higher in the LWIR (Long-Wavelength Infrared) range than in the MWIR (Mid-Wavelength Infrared) range. The emittance was approximately constant up to an observation angle of 60° in the MWIR range and 70° in the LWIR range, respectively. After that it started to decrease. The emittance of moist samples was significantly higher than that of dry samples. The influence of moisture ratio on the emittance could be estimated based on the moisture ratio of the sample, and the emittance of pure water and dry material, respectively. The applicability of measured emittance values was demonstrated in an investigation of the mechanical properties of sack paper samples. An infrared camera was applied to monitor the generation of heat during a tensile test of a paper sample. It was found that the observed increase in thermal energy at the time of rupture corresponded well to the value of the elastic energy stored in the sample just prior to rupture. The measured emittance value provided an increased accuracy in the thermal energy calculation based on the infrared images. / <p>QC 20121121</p>

The absorptance in vertical nanowire (nw) arrays is typically dominated by three optical phenomena: radial mode resonances, near-field evanescent wave coupling, and Fabry–Perot (F-P) mode resonances. The contribution of these optical phenomena to GaAs, InP and InAs nw absorptance was simulated using the finite element method. The study compared the absorptance between finite and semi-infinite nws with varying geometrical parameters, including the nw diameter (D), array period (P), and nw length (L). Simulation results showed that the resonance peak wavelength of the HE1n radial modes linearly red-shifted with increasing D. The absorptance and spectral width of the resonance peaks increased as L increased, with an absorptance plateau for very long nws that depended on D and P. Near-field coupling between neighbouring nanowires (nws) was observed to increase with increasing diameter to period ratio (D/P). The effect of F-P modes was more pronounced for shorter nws and weakly coupled light. Based on the collective observation of the correlation between nw geometry and optical phenomena in GaAs, InP, and InAs nw arrays, a periodic array of vertical InSb nws was designed for photodetectors in the low-atmospheric absorption window (λ = 3-5 μm) within the mid-wavelength infrared (MWIR) spectrum (λ = 3-8 μm). Simulations, using the finite element method, were implemented to optimize the nw array geometrical parameters (D, P, and L) for high optical absorptance (~0.8), which exceeded that of a thin film of equal thickness. The results further showed that the HE1n resonance wavelengths in InSb nw arrays can be tuned by adjusting D and P, thus enabling multispectral absorption throughout the near infrared (NIR) to MWIR region. Optical absorptance was investigated for a practical photodetector consisting of a vertical InSb nw array embedded in bisbenzocyclobutene (BCB) as a support layer for an ultrathin Ni contact layer. Polarization sensitivity of the photodetector was examined. Lastly, how light flux enters the nw top and sidewalls on HE11 resonance was investigated. / Dissertation / Doctor of Philosophy (PhD)