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SPINTRONIC DEVICES FROM CONVENTIONAL AND EMERGING 2D MATERIALS FOR PROBABILISTIC COMPUTINGVaibhav R Ostwal (9751070) 14 December 2020 (has links)
<p>Novel
computational paradigms based on non-von Neumann architectures are being
extensively explored for modern data-intensive applications and big-data
problems. One direction in this context is to harness the intrinsic physics of
spintronics devices for the implementation of nanoscale and low-power building
blocks of such emerging computational systems. For example, a Probabilistic
Spin Logic (PSL) that consists of networks of p-bits has been proposed for
neuromorphic computing, Bayesian networks, and for solving optimization
problems. In my work, I will discuss two types of device-components required
for PSL: (i) p-bits mimicking binary stochastic neurons (BSN) and (ii) compound
synapses for implementing weighted interconnects between p-bits. Furthermore, I
will also show how the integration of recently discovered van der Waals
ferromagnets in spintronics devices can reduce the current densities required
by orders of magnitude, paving the way for future low-power spintronics
devices.</p>
<p>First, a
spin-device with input-output isolation and stable magnets capable of
generating tunable random numbers, similar to a BSN, was demonstrated. In this
device, spin-orbit torque pulses are used to initialize a nano-magnet with
perpendicular magnetic anisotropy (PMA) along its hard axis. After removal of
each pulse, the nano-magnet can relax back to either of its two stable states,
generating a stream of binary random numbers. By applying a small Oersted field
using the input terminal of the device, the probability of obtaining 0 or 1 in
binary random numbers (P) can be tuned electrically. Furthermore, our work
shows that in the case when two stochastic devices are connected in series, “P”
of the second device is a function of “P” of the first p-bit and the weight of
the interconnection between them. Such control over correlated probabilities of
stochastic devices using interconnecting weights is the working principle of
PSL.</p>
<p>Next my
work focused on compact and energy efficient implementations of p-bits and
interconnecting weights using modified spin-devices. It was shown that unstable
in-plane magnetic tunneling junctions (MTJs), i.e. MTJs with a low energy
barrier, naturally fluctuate between two states (parallel and anti-parallel)
without any external excitation, in this way generating binary random numbers.
Furthermore, spin-orbit torque of tantalum is used to control the time spent by
the in-plane MTJ in either of its two states i.e. “P” of the device. In this
device, the READ and WRITE paths are separated since the MTJ state is read by
passing a current through the MTJ (READ path) while “P” is controlled by
passing a current through the tantalum bar (WRITE path). Hence, a BSN/p-bit is
implemented without energy-consuming hard axis initialization of the magnet and
Oersted fields. Next, probabilistic switching of stable magnets was utilized to
implement a novel compound synapse, which can be used for weighted
interconnects between p-bits. In this experiment, an ensemble of nano-magnets
was subjected to spin-orbit torque pulses such that each nano-magnet has a
finite probability of switching. Hence, when a series of pulses are applied,
the total magnetization of the ensemble gradually increases with the number of
pulses</p>
<p>applied similar to the
potentiation and depression curves of synapses. Furthermore, it was shown that
a modified pulse scheme can improve the linearity of the synaptic behavior,
which is desired for neuromorphic computing. By implementing both neuronal and
synaptic devices using simple nano-magnets, we have shown that PSL can be
realized using a modified Magnetic Random Access Memory (MRAM) technology. Note
that MRAM technology exists in many current foundries.</p>
<p>To further
reduce the current densities required for spin-torque devices, we have
fabricated heterostructures consisting of a 2-dimensional semiconducting
ferromagnet (Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>) and a metal with
spin-orbit coupling metal (tantalum). Because of properties such as clean
interfaces, perfect crystalline nanomagnet structure and sustained magnetic
moments down to the mono-layer limit and low current shunting, 2D ferromagnets
require orders of magnitude lower current densities for spin-orbit torque
switching than conventional metallic ferromagnets such as CoFeB.</p>
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Advancements in Spin Wave Devices for Next-Generation Radio Frequency TechnologyYiyang Feng (16626270) 25 July 2023 (has links)
<p>The ferrimagnetic electrical insulator yttrium iron garnet (YIG) has been proved a promising magnonic platform that allows for a variety of application within microwave fre- quency range. This dissertation focuses on the development of novel spin wave resonators and filters for next-generation radio frequency technology.</p>
<p>Chapter 1 begins with an introduction to modern radio frequency communication tech- nology and motivation of our research on novel radio frequency devices.</p>
<p>Chapter 2 discusses about the properties of yttrium iron garnet (YIG) thin film platform and theory of magnetostatic waves (MSW) within the magnetic thin film system. Three different types of magnetostatic wave modes, known as magnetostatic forward volume wave (MSFVW), magnetostatic backward volume waves (MSBVW) and magnetostatic surface wave (MSSW), are illustrated in this section. They have very distinct dispersion relations and require different transduction technology, which leads to disparate designs for devices utilizing different modes. The damping mechanism and linewidth of the magnetostatic modes will also be discussed in this chapter.</p>
<p>Chapter 3 will showcase a new YIG-on-Si platform created using novel YIG bonding technology and the first ever on-chip MSFVW hairpin resonator on the YIG-on-Si platform. In the first part, we would like to show finite element analysis of YIG-on-Si MSFVW hairpin resonator and prove the capability of the hairpin transducer incorporated with YIG thin film to yield lower self-inductance and stronger excitation field. These unique properties are beneficial for generating high coupling between magnon and microwave domains. In the following sections, the bonding technology essential for creation of YIG-on-Si platform and key fabrication technology of hairpin devices are explained in detailed. With well defined fabrication process established, we will demonstrate that the hairpin magnetostatic wave resonator obtained through the process is magnetically tunable with a high coupling efficiency over 50%. An out-of-plane Z-directional tunable magnetic field results in forward volume spin-wave resonance with frequency in the 5G band. This technology enables us to build on-chip devices of desirable high coupling and magnetic tuning on the new YIG-on-Insulator platform and provides possibility of magnetic tuning and band-pass filter at radio-frequency range.</p>
<p>Chapter 4 demonstrates a planar monolithic yttrium iron garnet (YIG) Chebyshev bandstop filter on traditional gadolinium gallium garnet (GGG) substrate with tunable frequency, low insertion loss and high rejection. This filter is created in YIG micro-machining technol- ogy that allows direct placement of metal transducers on YIG for strong spin-wave coupling. With an out-of-plane 3900 Oe bias field, the bandstop filter exhibits 55 dB maximum stop- band rejection at a center frequency of 6 GHz, with 2 dB passband insertion loss and 37.8 dBm passband <strong>IIP3</strong>. By applying different bias fields, the stopband center frequency is tuned from 4 GHz to 8 GHz while maintaining more than 30 dB rejection. Incorporated with proper design of tunable compact electromagnet, this new filter design can provide attenuation of spurs appearing across the 5G and X-band spectrum.</p>
<p>In chapter 5, we will explore the properties of YIG thin-film materials in depth. Both YIG-on-Si and YIG-on-GGG platform under different conditions will be examined. Results of X-ray diffraction (XRD), ferromagnetic resonance (FMR), scanning tunneling microscope (STM) on the YIG thin films will be presented. Those results will cast light onto the study of limiting factors of our YIG-on-Si and YIG-on-GGG devices.</p>
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INFRARED DIGITAL-MODE POISSONIAN BOLOMETERLeif Harrison Bauer (18863617) 24 June 2024 (has links)
<p dir="ltr">The market for infrared detectors has grown significantly in recent years due to the wide variety of applications from astronomy to medical thermography. Additionally, several emerging applications for high-speed infrared technologies are in development such as infrared LIDAR, autonomous vehicles, semiconductor device analysis, and free space communication. Improvements in the readout-speed and sensitivity of uncooled infrared detectors are required for some of these applications, and have been a long-standing goal in the field. Two technologies currently dominate the detection of infrared radiation, photodiodes and bolometers. Bolometers are extremely interesting as they are currently the most sensitive infrared detectors (either cooled or uncooled). We will propose and demonstrate a new type of bolometric infrared detector based on a highly structured spintronic material. The device's detection mechanism utilizes thermally activated magnetic transitions in a nanoscale magnetic device. We will also discuss a classification for detectors based on their digital-mode (discrete) or analog (continuous) readout signals. We develop a stochastic model to compare the sensitivity of these detectors. From this model we demonstrate several fundamental limits in the measurement of temperature by infrared detection.</p>
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