Wide arrays of applications exist for sensing systems capable of magnetic field detection. A broad range of sensors are already used in this capacity, but future sensors need to increase sensitivity while remaining economical. A promising sensor system to meet these requirements is that of magnetoelectric (ME) laminates. ME sensors produce an electric field when a magnetic field is applied. While this ME effect exists to a limited degree in single phase materials, it is more easily achieved by laminating a magnetostrictive material, which deforms when exposed to a magnetic field, to a piezoelectric material. The transfer of strain from the magnetostrictive material to the piezoelectric material results in an electric field proportional to the induced magnetic field. Other fabrication techniques may impart the directionality needed to classify the ME sensor as a vector magnetometer. ME laminate sensors are more affordable to fabricate than competing vector magnetometers and with recent increases in sensitivity, have potential for use in arrays and gradiometer configurations. However, little is known about their total field detection, the effects of multiple sensors in close proximity and the signal processing needed for target localization. The goal for this project is to closely examine the single axis ME sensor response in different orientations with a moving magnetic dipole to assess the field detection capabilities. Multiple sensors were tested together to determine if the response characteristics are altered by the DC magnetic bias of ME sensors in close proximity. And finally, the ME sensor characteristics were compared to alternate vector magnetometers. / Master of Science

The rapid advancement in complimentary metal-oxide-semiconductor (CMOS) electronics has led to a reduction in the sizes of wireless sensor networks (WSN) and a subsequent decrease in their power requirements. To meet these power requirements for long time of operation, energy harvesters have been developed at the micro scale which can convert vibration energy into electrical energy. Recent studies have shown that for mechanical-to-electrical conversion at the mm-scale (or micro scale), piezoelectric mechanism provides the best output power density at low frequencies as compared to the other possible mechanisms for vibration energy harvesting (VEH). However, piezoelectric-based VEH presents a fundamental challenge at the micro scale since the resonance frequency of the structure increases as the dimension decreases. Electromagnetic induction is another voltage generation mechanism that has been utilized for VEH. However, the electromagnetic induction based VEH is limited by the magnet and coil size and the decrease in power density at the micro scale. Hybrid energy harvesting is a novel concept that allows for increased power response and increased optimization of the generated voltage. The work in this field is currently limited due to integration challenges at small dimensions. An effective design for low frequency piezoelectric VEH is presented in this work. A unique cantilever design called arc-based cantilever (ABC) is presented which exhibits low natural frequencies as compared to traditional cantilevers. A general out-of-plane vibration model for ABCs was developed that incorporated the effects of bending, torsion, transverse shear deformation and rotary inertia. Different configurations of micro ABCs were investigated through analytical modeling and validation experiments. ABC structures were fabricated for dual-phase energy harvesting from vibrations and magnetic fields. Next, a levitation-induced electromagnetic VEH concept based on double-repulsion configuration in the moving magnet composite was studied. Computational modeling clearly illustrated the advantages of the double-repulsion configuration over the single-repulsion and no-repulsion configurations. Based on the modeling results, an AA battery-sized harvester with the double-repulsion configuration was fabricated, experimentally characterized and demonstrated to charge a cell phone. The scaling analysis of electromagnetic energy harvesters was conducted to understand the performance across different length scales. A micro electromagnetic harvester was developed that exhibited softening nonlinear spring behavior, thus leading to the finding of nonlinear inflection in magnetically-levitated electromagnetic harvesters. The nonlinear inflection theory was developed to show its causal parameters. Lastly, a coupled harvester is presented that combines the piezoelectric and electromagnetic voltage mechanisms. The advantages of each mechanism were shown to positively contribute to the performance of hybrid harvester. The cantilever provided low stiffness, low frequency, and pure bending, while the magnetic system provided nonlinearity, broadband response, and increased strain (and thus voltage). / Ph. D.

Magnetoelectric (ME) effect is defined as the change in dielectric polarization (P) of a material under an applied magnetic field (H) or an induced magnetization (M) under an external electric field (E). ME materials have attracted number of investigators due to their potential for improving applications such as magnetic field sensors, filters, transformers, memory devices and energy harvesters. It has been shown both experimentally and theoretically that the composite structures consisting of piezoelectric and magnetostrictive phases possess stronger ME coupling in comparison to that of single phase materials. Giant magnetoelectric effect has been reported in variety of composites consisting of bulk-sized ME composites and thin film ME nanostructures. In this dissertation, novel ME composite systems are proposed, synthesized and characterized in both bulk and thin films to address the existing challenges in meeting the needs of practical applications. Two applications were the focused upon in this study, tunable transformer and dual phase energy harvester, where requirements can be summarized as: high ME coefficient under both on-resonance and off-resonance conditions, broad bandwidth, and low applied DC bias. In the first chapter, three challenges related to the conventional ME behavior in bulk ME composites have been addressed (1) The optimized ME coefficient can be achieved without external DC magnetic field by using a self-biased ME composite with a homogenous magnetostrictive material. The mechanism of such effect and its tunability are studied; (2) A near-flat ME response regardless of external magnetic field is obtained in a self-biased ME composite with geometry gradient structure; (3) By optimizing interfacial coupling with co-firing techniques, the ME coefficient can be dramatically enhanced. Theses co-fired ME laminates not only exhibit high coupling coefficient due to direct bonding, but also illustrate a self-biased effect due to the built-in stress during co-sintering process. These results present significant advancement toward the development of multifunctional ME devices since it eliminates the need for DC bias, expands the working bandwidth and enhances the ME voltage coefficient. Next, magnetoelectric nanocomposites were developed for understanding the nature of the growth of anisotropic thin film structures. In this chapter following aspects were addressed: (1) Controlled growth of nanostructures with well-defined morphology was obtained. Microstructure and surface morphology evolution of the piezoelectric BaTiO3 films was systematically analyzed. A growth model was proposed by considering the anisotropy of surface energy and the formation of twin lamellae structure within the frame work of Structure Zone Model (SZM) and Dynamic Scaling Theory (DST). In parallel to BaTiO3 films, well-ordered nanocomposite arrays [Pb1.1(Zr0.6Ti0.4)O3/CoFe2O4] with controlled grain orientation were developed and investigated by a novel hybrid deposition method. The influence of the pre-deposited template film orientation on the growth of ME composite array was studied. (2) PZT/CFO/PZT thick composite film and BTO/CFO thin film were synthesized using sol-gel deposition (SGD) and pulsed laser deposition (PLD) techniques, respectively. The HRTEM analysis revealed local microstructure at the interface of consecutive constituents. The interfacial property variation of these films was found to affect the coupling coefficient of corresponding ME nanocomposites. Subsequently, a novel complex three-dimensional ME composite with highly anisotropic structure was developed using a hybrid synthesis method. The influence of growth condition on the microstructure and property of the grown complex composites was studied. The film with highly anisotropic structure was found to possess tailored ferroelectric response indicating the promise of this synthesis method and microstructure. Based on the laminated ME composites, three types of ME tunable transformer designs were designed and fabricated. The goal was to develop a novel ME transformer with tunable performance (voltage gain and/or working resonance frequency) under applied DC magnetic field. Conventional ME transformers need either winding coil or large external magnetic field to achieve the tunable feature. Considering the high ME coupling of ME laminate, two ME transformers were developed by epoxy bonding Metglas with transversely/longitudinally poled piezoelectric ceramic transformer. The influence of different operation modes toward magnetoelectric tunability was analyzed. In addressing the concern of the epoxy bonding interface, a co-fired ME transformer with unique piezoelectric transformer/magnetostrictive layer/piezoelectric transformer trilayer structure was designed. The design and development strategy of thin film ME transformer was discussed to illustrate the potential for ME transformer miniaturization and on-chip integration. Lastly, motivated by the increasing demand of energy harvesting (EH) systems to support self-powered sensor nodes in structural health monitoring system, a magnetoelectric composite based energy harvester was developed. The development and design concept of the magnetoelectric energy harvester was systematically discussed. In particular, the first dual-phase self-biased ME energy harvester was designed which can simultaneously harness both vibration and stray magnetic field (Hac) in the absence of DC magnetic field. Strain distribution of the EH was simulated using the finite element model (FEM) at the first three resonance frequencies. Additionally, the potential of transferring this simple EH structure into MEMS scalable components was mentioned. These results provide significant advancement toward high energy density multimode energy harvesting system. / Ph. D.

MEMS devices are finding application in diverse fields that include energy harvesting, microelectronics and sensors. In energy harvesting, MEMS scale devices are employed due to its efficiencies of scale. The miniaturization of energy harvesters permit them to be integrated as the power supply for sensors often in the same package and also extends their use to remote and extreme ambient applications. Unlike inductive harvesting, piezoelectric and magnetoelectric devices lend easily to MEMS scaling. The processing of such Piezo-MEMS devices often requires special fabrication, characterization and testing techniques. Our research work has focused on the development of the various technologies for a) the better characterization of the constituent materials that make up these devices, b) the conceptualization and structural design of unique MEMS energy harvesters and finally c) the development of the unit operations (many novel) for fabrication and the mechanical and electrical testing of these devices. In this research work, we have pioneered some new approaches to the characterization of thin films utilized in Piezo-MEMS devices: (1) Temperature-Time Transformation (TTT) diagrams are used to document texture evolution during thermal treatment of ceramics. Multinomial and multivariate regression techniques were utilized to create the predictor models for TTT data of Pb(Zr0.60Ti0.40 O3) sol-gel thin films. (2) We correlated the composition (measured using Energy Dispersive X-ray analysis (EDX) and Electron Probe Micro Analysis (EPMA)) of Pb(Zr0.52Ti0.48 O3) RF sputtered thin films to its optical dispersion properties measured using Variable Angle Spectroscopic Ellipsometry (VASE). Wemple-DiDomenico, Jackson-Amer, Tauc and Urbach optical dispersion factors and Lorentz Lorenz polarizability relationships were combined to realize a model for predicting the elemental content of any thin film system. (3) We developed in house capability for strain analysis of magnetostrictive thin films using laser Doppler Vibrometry (LDV). We determined a methodology to convert the displacements measurements of AC magnetic field induced vibrations of thin film samples into magnetostriction values. (4) Finally, we report the novel use of a thermo-optic technique, Time Domain Thermoreflectance (TDTR) in the study of Pb(Zr,Ti)O3 (PZT) thin film texturing. Time Domain Thermoreflectance (TDTR) has been proved to be capable of measuring thermal properties of atomic layers and interfaces. Therefore, we utilized TDTR to analyze and model the heat transport at the nano scale and correlate with different PZT crystalline orientations. To harvest energy at the low frequency (<100Hz) of ambient vibrations, MEMS energy harvesters require special structures. Extensive research has led us to the development of Circular Zigzag structure that permits inertial mass free attainment of such low frequencies. In addition to Si micromachining, we have fabricated such structures using a new Micro water jet micromachining of thin piezo sheets, unimorphs and bimorphs. For low frequency magnetic energy harvesting, we also fabricated the first magnetoelectric macro fiber composite. This device also employs a novel low temperature metallic bonding technique to fuse the magnetostrictive layer to the piezoelectric layers. A special low viscosity epoxy enabled the joining of the flexible circuit to the magnetoelectric fibers. Lastly, we developed a nondimensional tunable Piezo harvester, called PiezoCap, which decouples the energy harvesting component of the device from the resonant vibration component. We do so by using magnets loaded on piezo harvester strips, thereby making them piezomagnetoelastic and vary the spacing between 2 magnet+piezoelectric pairs to eliminate dimensionality and permit active tunability of the harvester's resonant frequency. / Ph. D.

Berry curvature appears in the semi-classical theory of Bloch electrons already to first order in electromagnetic fields, resulting in profound modification of the carrier velocity and phase space density of states. Here we derive the equations of motion for the physical position and crystal momentum to second order in the fields. The dynamics still has a Hamiltonian structure, albeit with noncanonical Poisson brackets between the physical variables. We are able to expand both the carrier energy and the Poisson brackets to second order in the fields with terms of clear physical meaning. To demonstrate the utility of our theory, we obtain with much ease the electromagnetic response and orbital magnetic susceptibility. / text

This thesis presents three investigations of the magnetic and electronic proper- ties of manganese oxide materials. The investigations are performed using a variety of neutron scattering and x-ray scattering techniques. The electronic ground-state of Pr(Sr_0.1 Ca_0.9)₂ Mn₂O₇ an antiferromagnet with CE-type ordering, is determined using neutron spectroscopy, as opposed to the more usual approach of using diffraction. The Zener polaron model of the elec- tronic ground state of the CE-type magnetic phase is shown to be unsuitable for this material. The ground-state is shown to agree well with the electronic ground state proposed by Goodenough in the 1950’s, but without significant Mn^3&plus;/Mn^4&plus; disproportionation. The distribution of the magnetisation density within the unit cell of the CE-type antiferromagnet La_0.5Sr_1.5MnO₄ is determined from a polarised neutron diffraction experiment by analysing the results with the maximum entropy method. The majority of the magnetisation density is found to be located at the Mn site. The investigation shows tentative evidence of a small magnetic moment on the in-plane O site. However, a larger moment is observed at both the La/Sr site and the out-of-plane O site. The magnetic structure of the magnetoelectric multiferroic DyMn₂O₅ is inves- tigated using resonant magnetic x-ray scattering. The magnetic structure is shown to be similar to other members of the RMn₂O₅ series of multiferroics, but with the key difference that the magnetic moments are closely aligned parallel with the crystallographic b-axis, in contrast to the usual observation of the moments being close to parallel with the a-axis. This study also shows evidence that the electrical polarisation has a significant contribution from the valence electrons of the O ions, agreeing with previous work.

The ability to control the bi-stable magnetization states of shape anisotropic single domain nanomagnets has enormous potential for spawning non-volatile and energy-efficient computing and signal processing systems. One of the most energy efficient switching methods is to adopt a system of a 2-phase multiferroic nanomagnet, where a voltage applied on the piezoelectric layer generates a strain in it and the strain is elastically transferred to the magnetostrictive nanomagnet which rotates the magnetization states of the nanomagnet at room temperature via the converse magnet-electric effect. Recently, it has been demonstrated that the magnetization of a Co nanomagnet can be switched between two stable orientations by this technique. The switching probability, however, is low due to the relatively small magnetostriction of Co. One possible way to improve the statistics is to use a better magnetostrictive material like Galfenol which has much higher magnetostriction and is therefore desirable, but it also presents unique material challenges owing to the existence of many phases. Nonetheless, there is a need to step beyond elemental ferromagnets and examine compound or alloyed ferromagnets with much higher magnetostriction to advance this field. There has not been much work in nanoscale FeGa magnets which are important for nanomagnetic logic and memory applications. Here, we have experimentally demonstrated switching of magnetization of Galfenol nanomagnets and proposed a core component of ultra-energy-efficient memory cell. We also demonstrated a bit writing scheme which completely reverses the magnetization with only strain, thus overcoming the fundamental obstacle of strain induced switching of magnetizations of nanomagnets.

Thin films of Strontium Ruthenate have been grown on Strontium Titanate and Lanthanum Aluminate (100) substrates by pulsed laser deposition. X-ray diffraction results show that the films grown on the Strontium Titanate are amorphous and polycrystalline on the Lanthanum Aluminate. Resistances versus temperature measurements show that the films exhibit semiconducting characteristics. In addition to the growth of Strontium Ruthenate thin films, multilayer heterostructures of Terfenol-D thin films on polycrystalline Lead Titanate thin films were grown by pulsed laser deposition. By using a novel experimental technique called magnetic field assisted piezoelectric force microscopy it is possible to investigate the magnetoelectric coupling between the electrostrictive Lead Titanate and magnetostrictive Terfenol-D thin film. Upon examination of the produced thin films the phase and amplitude components of the piezoelectric signal experience changes in response to an applied in-plane magnetic field. These changes provide experimental evidence of a magnetoelectric coupling between the Terfenol-D and Lead Titanate layers.

Nas últimas décadas, o consumo de dispositivos eletrônicos e a alta demanda por armazenamento de dados tem mostrado grandes oportunidades para a criação de novas tecnologias que garantam as necessidades mundiais na área de computação e desenvolvimento. Alguns materiais multiferroicos tem sido amplamente estudados e o BiFeO3, considerado o único material multiferroico em temperatura ambiente, ganhou destaque como candidato para produção de dispositivos lógicos e de memória. O uso de técnicas de crescimento como a deposição por laser pulsado permitiu a produção de filmes finos de BiFeO3 com elevado controle de qualidade. Heteroestruturas de filmes multiferroicos de BiFeO3 e LaBiFeO3 foram crescidas com diferentes espessuras sobre substratos de SrTiO3(100), DyScO3(110) e SrTiO3/Si(100) para avaliação e teste de suas propriedades elétricas e magnéticas. Filmes ferromagnéticos de Co0,9Fe0,1 foram depositados por sputtering sobre os filmes multiferroicos para avaliação da interação interfacial entre ordenamentos magnéticos. Técnicas como fotolitografia foram utilizadas para padronização de microdispositivos gravados sobre as amostras. Tanto os filmes finos de BiFeO3 como os de LaBiFeO3 foram crescidos epitaxialmente sobre os substratos já cobertos com uma camada buffer de SrRuO3 usado como contato elétrico inferior. A estrutura cristalina romboédrica das ferritas de bismuto foi confirmada pelos dados de difração de raios X, bem como a manutenção de tensão estrutural causada pela rede cristalina do substrato para amostras de 20 nm. Os valores de coeficiente do tensor piezelétrico d33 foram da ordem de 0,15 V (&sim; 60 kV.cm-2) para amostras com 20 nm de espessura enquanto que os valores de voltagem coerciva para as análises de histerese elétrica foram da ordem de 0,5 V para as mesmas amostras. A relação de coercividade elétrica com a espessura corresponde ao perfil encontrado na literatura pela relação E&asymp;d-2/3. As amostras de CoFe/BFO e CoFe/LBFO depositadas em diferentes substratos apresentam acoplamento interfacial entre ordenamento ferromagnético e antiferromagnético com momento ferromagnético de rede. / For the last few decades, the consumption of electronic devices and the high demand for data storage have shown great opportunities to create modern technologies that assure the worldwide needs in computing and development. Some multiferroic materials have been extensively studied and BiFeO3, considered the only multiferroic material at room temperature, has received attention as a candidate to produce logic and memory devices. The use of growth techniques such as pulsed laser deposition allowed the production of thin films of BiFeO3 with high quality control. Multiferroic film heterostructures of BiFeO3 and LaBiFeO3 were grown with different thicknesses on SrTiO3 (100), DyScO3 (110) and SrTiO3/Si (100) substrates to evaluate and test their electrical and magnetic properties. The allow Co0.9Fe0.1 ferromagnetic films were deposited by sputtering on the multiferroic films to evaluate the interfacial interaction between magnetic ordering. Techniques such as photolithography were used to pattern microdevices on the samples. Both the BiFeO3 and LaBiFeO3 thin films were grown epitaxially on the substrates already covered with a SrRuO3 buffer layer used as the lower electrical contact. The rhombohedral crystalline structure of the bismuth ferrites was confirmed by the X-ray diffraction data as well as the strain maintenance caused by the crystal lattice of the substrate for 20 nm samples. The coefficient values of the piezoelectric tensor d33 were around 0.15 V (&sim; 60 kV.cm-2) for 20 nm thick samples whereas the coercive voltage values for the electrical hysteresis analyzes were about 0.5 V for the same samples. The relation between electric coercivity and the thickness corresponds to the profile found in the literature by the relation E&asymp;d-2/3. The samples of CoFe/BFO and CoFe/LBFO deposited in different substrates present interfacial coupling between ferromagnetic and antiferromagnetic arrangement with net ferromagnetic moment.

Nas últimas décadas, o consumo de dispositivos eletrônicos e a alta demanda por armazenamento de dados tem mostrado grandes oportunidades para a criação de novas tecnologias que garantam as necessidades mundiais na área de computação e desenvolvimento. Alguns materiais multiferroicos tem sido amplamente estudados e o BiFeO3, considerado o único material multiferroico em temperatura ambiente, ganhou destaque como candidato para produção de dispositivos lógicos e de memória. O uso de técnicas de crescimento como a deposição por laser pulsado permitiu a produção de filmes finos de BiFeO3 com elevado controle de qualidade. Heteroestruturas de filmes multiferroicos de BiFeO3 e LaBiFeO3 foram crescidas com diferentes espessuras sobre substratos de SrTiO3(100), DyScO3(110) e SrTiO3/Si(100) para avaliação e teste de suas propriedades elétricas e magnéticas. Filmes ferromagnéticos de Co0,9Fe0,1 foram depositados por sputtering sobre os filmes multiferroicos para avaliação da interação interfacial entre ordenamentos magnéticos. Técnicas como fotolitografia foram utilizadas para padronização de microdispositivos gravados sobre as amostras. Tanto os filmes finos de BiFeO3 como os de LaBiFeO3 foram crescidos epitaxialmente sobre os substratos já cobertos com uma camada buffer de SrRuO3 usado como contato elétrico inferior. A estrutura cristalina romboédrica das ferritas de bismuto foi confirmada pelos dados de difração de raios X, bem como a manutenção de tensão estrutural causada pela rede cristalina do substrato para amostras de 20 nm. Os valores de coeficiente do tensor piezelétrico d33 foram da ordem de 0,15 V (&sim; 60 kV.cm-2) para amostras com 20 nm de espessura enquanto que os valores de voltagem coerciva para as análises de histerese elétrica foram da ordem de 0,5 V para as mesmas amostras. A relação de coercividade elétrica com a espessura corresponde ao perfil encontrado na literatura pela relação E&asymp;d-2/3. As amostras de CoFe/BFO e CoFe/LBFO depositadas em diferentes substratos apresentam acoplamento interfacial entre ordenamento ferromagnético e antiferromagnético com momento ferromagnético de rede. / For the last few decades, the consumption of electronic devices and the high demand for data storage have shown great opportunities to create modern technologies that assure the worldwide needs in computing and development. Some multiferroic materials have been extensively studied and BiFeO3, considered the only multiferroic material at room temperature, has received attention as a candidate to produce logic and memory devices. The use of growth techniques such as pulsed laser deposition allowed the production of thin films of BiFeO3 with high quality control. Multiferroic film heterostructures of BiFeO3 and LaBiFeO3 were grown with different thicknesses on SrTiO3 (100), DyScO3 (110) and SrTiO3/Si (100) substrates to evaluate and test their electrical and magnetic properties. The allow Co0.9Fe0.1 ferromagnetic films were deposited by sputtering on the multiferroic films to evaluate the interfacial interaction between magnetic ordering. Techniques such as photolithography were used to pattern microdevices on the samples. Both the BiFeO3 and LaBiFeO3 thin films were grown epitaxially on the substrates already covered with a SrRuO3 buffer layer used as the lower electrical contact. The rhombohedral crystalline structure of the bismuth ferrites was confirmed by the X-ray diffraction data as well as the strain maintenance caused by the crystal lattice of the substrate for 20 nm samples. The coefficient values of the piezoelectric tensor d33 were around 0.15 V (&sim; 60 kV.cm-2) for 20 nm thick samples whereas the coercive voltage values for the electrical hysteresis analyzes were about 0.5 V for the same samples. The relation between electric coercivity and the thickness corresponds to the profile found in the literature by the relation E&asymp;d-2/3. The samples of CoFe/BFO and CoFe/LBFO deposited in different substrates present interfacial coupling between ferromagnetic and antiferromagnetic arrangement with net ferromagnetic moment.