Doctor of Philosophy / First part of the thesis is focused on experimental preparation of new hard quaternary amorphous materials Si-B-C-N with high thermal stability. Materials were prepared in the form of thin films using reactive magnetron sputtering. The technique used proved to be suitable for reproducible synthesis of these materials. The Si-B-C-N films were generally found to be amorphous with low compressive stress and good adhesion to silicon or glass substrates. The process and film characteristics were controlled by varying the sputter target composition, the Ar fraction in the N2–Ar gas mixture, the negative rf-induced substrate bias, and the substrate temperature. Main conclusions describe the relationships between process parameters, discharge and deposition characteristics and film properties (elemental composition, chemical bonding structure, material hardness, compressive stress or electrical conductivity of materials prepared). Second part of the thesis is focused on ab-initio simulations of structures of experimentally prepared Si-B-C-N materials. In the performed liquid-quench simulations, the Kohn-Sham equations for the valence electrons are expanded in a basis of plane wave functions, while core electrons were represented using Goedecker-type pseudopotentials. We simplified the ion bombardment process by assuming that the primary impact creates a localized molten region of high temperature and sufficiently short cooling time, commonly referred to as a thermal spike. Main conclusions deal with N2 formation in studied materials, effect of implanted Ar on structure and properties of prepared materials, ability of Si to relieve that part of compressive stress which is caused by implanted Ar, and ability of B to improve thermal stability of Si-B-C-N materials. The calculated results are compared with experiment.

Nanocomposite thin films can find application in photovoltaics, optics, fabrication of sensors, or in biomedicine. This work investigates fabrication and characterization of thin metal-plasma polymer nanocomposite films which have direct application because of their unique optical properties (e.g. SERS - Surface-Enhanced Raman Spectroscopy) or antibacterial effects (biomedicine). We fabricated metal nanoparticles either by magnetron sputtering (island growth) or by means of gas aggregation source of nanoparticles, thereby we got nanoparticles with very different morphologies. We used silver as a material for nanoparticles because of its antibacterial effects. We incorporated these nanoparticles into sputtered Nylon and sputtered PTFE (polytetrafluoroethylene) plasma polymer matrix. These two polymers have very different chemical structure and related different surface energy. First, we compared growth of nanoparticles on substrates of sputtered Nylon and PTFE. Then we compared properties of sandwich nanocomposites polymer-Ag-polymer for both types of nanoparticles and for both matrix materials. We characterized produced thin films especially with respect to their stability in water (antibacterial films), thermal stability (sterilization by heating) and stability on the open air (storage). Finally, the tests...

Les travaux de thèse ont porté sur la substitution cationique et anionique du composé LaFeO3, élaboré en couche mince par pulvérisation cathodique magnétron réactive (deux cibles métalliques et mélange gazeux Ar+O2). La première partie de la thèse est consacrée à la substitution du lanthane par d'autres terres rares plus petites : Praséodyme, Néodyme et Samarium. Les quatre pérovskites LaFeO3, PrFeO3, NdFeO3 et SmFeO3 ont donc été synthétisées et caractérisées (caractérisations optiques, électriques et structurales), et l'influence de la substitution sur les propriétés physiques est discutée. Les travaux ont montré que la substitution du lanthane par d’autres terres rares plus petites entraîne une modification des propriétés, que nous pouvons directement relier à la distorsion de la maille. Dans une deuxième partie, le dopage à l’azote du composé LaFeO3 a été réalisé, en utilisant de l'azote en tant que gaz réactif (deux cibles + mélange gazeux Ar+O2+N2). Les conditions de dépôt ont été étudiées dans le but d'optimiser la synthèse. A partir de mesures in situ des paramètres de la cible en fonction des débits de gaz, associées aux mesures post dépôt (composition, épaisseur, conductivité électrique), des conditions particulières de synthèse ont été retenues, afin d’optimiser le dopage à l’azote. L’utilisation de ces conditions de synthèses spécifiques ont permis la réalisation de plusieurs dépôts LaFeO3-xNx qui ont ensuite été caractérisés (caractérisations chimiques, optiques, électriques et structurales). Il en résulte que le dopage à l’azote du composé LaFeO3 entraîne une modification du gap de la pérovskite, ainsi que des propriétés électrique, et optique, malgré une faible teneur en azote. / The work done trough this PhD deals with cationic and anionic substitution of LaFeO3 thin films deposited by reactive magnetron sputtering (co-sputtering of two targets in Ar+O2 mixture). The first part of the word is devoted to substitution of lanthanum by smaller rare earth, Praseodymium, Neodymium, and Samarium. The four perovskites LaFeO3, PrFeO3, NdFeO3 and SmFeO3 have been synthesized and characterized (optical, electrical and structural properties), and this cationic substitution is discussed. It results in a shift of the properties which can be directly linked with lattice distortion due to smaller rare earth. In a second part, nitrogen doping of LaFeO3 has been studied, by using nitrogen as reactive gas (co-sputtering of two targets in Ar+O2+N2 mixture). Deposition conditions have been studied in order to optimize the perovskite synthesis. From in situ measurements of target voltage variation with flow rate associated to post-deposition measurement (thickness, composition, electrical conductivity), specified conditions have been found for nitrogen doping optimization. Different LaFeO3-xNx thin films have been deposited following these specified conditions, and characterized (chemical, optical, electrical and structural analysis). Nitrogen doping of LaFeO3 leads to bandgap decrease, associated to modification of optical and electrical properties, even if a small amount of nitrogen can be added to the structure.

Cette thèse, réalisée dans le cadre du projet PCP (Piles à Combustible par Procédés Plasma) est le fruit d’une collaboration de plusieurs années : Dreux Agglomération, les laboratoires GREMI et IEM, et l’industriel MHS Equipment. L’objectif de ce travail étant la fabrication par procédé plasma, d’un coeur de pile à combustible, dans un réacteur prototype préindustriel. Pour ce faire, deux études de faisabilités ont été menées en parallèle. La première étude, à l’IEM, porte sur la synthèse, par polymérisation plasma dans un réacteur pilote, de membranes polymères conductrices de protons. Deux précurseurs ont été utilisés : le styrène et l’acide trifluorométhanesulfonique. Les membranes polymères plasma se présentent sous la forme de dépôts denses, homogènes, et très adhérents à leur support en tissu carboné. Les membranes plasma sont intrinsèquement bien moins conductrices que la membrane commerciale Nafion®, néanmoins, leur niveau de conduction reste satisfaisant du fait de leur faible épaisseur. Les membranes plasmas profitent de leur densité et de leur fort taux de réticulation pour disposer une imperméabilité au méthanol beaucoup plus importante que celle du Nafion®. La stabilité thermique des membranes plasma, également évaluée, leur permet de supporter les températures de fonctionnement des piles. La seconde étude concerne l’élaboration des électrodes par pulvérisation magnétron dans le réacteur pilote au GREMI. L’utilisation d’une configuration de dépôt à une cible de platine ou de la combinaison d’une cible de platine et d’une cible de carbone, a permis de réduire la quantité de platine déposé sur le support carboné et conduit à l’optimisation de la dispersion du platine pour une meilleure efficacité catalytique. En outre, dans un contexte industriel, l’intégration de l’assemblage membrane électrode a été transférée sur un prototype linéaire combinant en une seule fois la polymérisation plasma et la pulvérisation magnétron. Des coeurs de pile ont été fabriqués et testés en banc de pile. / This work is part of PCP (Piles à Combustible par Procédés Plasma) project with the involvement of many partners: Dreux Agglomeration Community, GREMI and IEM laboratories, and the private industrial MHS Equipment. The aim of this work is the development of pre-industrial reactor prototype in order to manufacture by plasma processes all active layers of fuel cells cores i.e. the electrodes and the membrane. Two studies were conducted at the same time. The first from IEM have focused on the preparation by plasma polymerization, in a pilot reactor, of proton conducting polymer membranes. Two precursors were used: styrene and trifluoromethanesulfonic acid. The plasma membranes obtained are dense, uniform, and very adherent on carbon cloth support. The intrinsic ionic conductivity of plasma polymerized membranes is lower than the one of Nafion® membranes but their conduction ability is observed to be competitive due to their low thickness. Due to their highly cross-linked structure and density, plasma-polymerized membranes show methanol permeability much lower than Nafion® membranes ones. The thermal stability measurements have shown that plasma membranes easily support the operating temperature of fuel cells. The second study from GREMI concerns the development of catalyst or integral catalytic electrodes by magnetron sputtering in the pilot reactor. The use of a single platinum target or the combination of both platinum and carbon targets allowed to reduce the platinum content and to control the platinum concentration profile in the electrode support leading to the optimization of the platinum dispersion for a high increase of catalyst efficiency. Furthermore, in an industrial context, MEA’s integration was transferred using a linear industrial prototype which combines plasma polymerization for the membrane deposition and plasma sputtering for Pt deposition in a single device. Compact plasma MEA are produced and characterized in mono-cells.

No description available.

Nesse trabalho foram fabricados filmes finos de TiO2 por RF magnetron sputtering reativo sobre substrato de silício (1 0 0). A pressão parcial do oxigênio na câmara foi variada de 5 a 100% em relação ao argônio. Após a deposição os filmes foram submetidos a tratamento térmico em atmosfera de oxigênio. A estequiometria dos filmes e o perfil de profundidade foram obtidos por RBS. A estrutura cristalina foi obtida por XRD. As propriedades ópticas foram obtidas por interferometria e reflectância e as elétricas por meio das curvas C-V. Os valores de espessura dos filmes sem tratamento térmico aumentaram aproximadamente 41% com o aumento do oxigênio na câmara de deposição. Essa variação está ligada ao aumento da eficiência do sputtering do alvo. Os índices de refração dos filmes sem tratamento térmico se mantiveram dentro de um intervalo de aproximadamente 2,3 a 2,4. A diminuição do band gap com o tratamento térmico é consequência da mudança de fase cristalográfica de anatase para rutila. A estequiometria TiOx dos filmes antes do tratamento térmico apresentaram valores de x entre 2,0 e 2,4. A espessura em TFU dos filmes aumentou com o percentual de oxigênio na câmara. As amostras que receberam tratamento térmico apresentaram difusão de titânio na interface do substrato e incorporação de oxigênio no filme. Os valores da constante dielétrica aumentaram com o percentual de oxigênio na câmara, em contraposição com o efeito do tratamento térmico que diminuiu o valor. Todos os resultados observados são coerentes do ponto de vista da mudança de fase anatase rutila e aumento do percentual de oxigênio na câmara. / In this work thin films of TiO2 were produced by reactive RF magnetron sputtering on silicon substrate (1 0 0). The oxygen partial pressure in the chamber was varied from 5 to 100% in relation to argon. After deposition the films were submitted to thermal treatment under an oxygen atmosphere. The stoichiometry of the films and the depth profile were obtained by RBS. The crystal structure was obtained by XRD. Its optical properties were obtained by interferometry and reflectance and the electrical were obtained by means of the C-V curves. The thickness values of films without heat treatment increased approximately 41% with the increase of oxygen in the deposition chamber. This variation is linked to the increased sputtering efficiency of the target. The refractive indexes of films without heat treatment remained within a range of about 2.3 to 2.4. The decrease of the band gap with the heat treatment is a consequence of the change of crystallographic phase from anatase to rutile. The TiOx stoichiometry of the films before the heat treatment showed values of x between 2.0 and 2.4. The TFU thickness of the films increased with the percentage of oxygen in the chamber. The samples that received heat treatment shows diffusion of titanium at the interface of the substrate and incorporation of oxygen in the film. The values of the dielectric constant increased with the percentage of oxygen in the chamber, as opposed to the effect of the thermal treatment that decreased the value. All the results observed are consistent from the point of view of the anatase - rutile phase transition and the increase in the oxygen percentage in the chamber.

Global warming and developments of alternative energy technologies have become important issues nowadays. Subsequently, the concept of energy harvesting is rising because of its ability of transferring waste energy into usable energy. Thermoelectric devices play a role in this field since there is tremendous waste heat existing in our lives, such as heat from engines, generators, stoves, computers, etc. Thermoelectric devices can extract the waste heat and turn them into electricity. Moreover, the reverse thermoelectric phenomenon has the function of cooling which can be applied to refrigerator or heat dissipation for electronic devices. However, the energy conversion efficiency is still low comparing to other energy technologies. The efficiency is judged by thermoelectric figure of merit (ZT), defined by Seebeck coefficient, electrical conductivity and thermal conductivity. In order to improve ZT, thin film materials are good candidates because of their structural effects on altering ZT.    Ca3Co4O9 thin films grown by reactive radio frequency magnetron sputtering followed by post-annealing process is studied in this thesis. Structural properties of the films with the evolution of elemental ratio (Ca/Co) of calcium and cobalt have been investigated. For the investigations, three samples having elemental ratio 0.82, 0.72, and 0.66 for sample CCO1, CCO2 and COO3, respectively, have been prepared. Structural properties of the films have been investigated by X-ray diffraction (XRD) θ-2θ and pole figure analyses. Surface morphology of the films has been investigated by scanning electron microscopic (SEM) analyses. The highly oriented and phase pure epitaxial Ca3Co4O9 thin films were obtained in the end.   Mixing of ScN and CrN to obtain ScxCr1-xN solid solution thin films by DC magnetron sputtering is the other task in this thesis. Growth of ScN and CrN thin films were studied first in order to get the best mixed growth conditions. The phase shifts between ScN (111) and CrN (111) peaks were observed in mixed growth films by XRD θ-2θ measurements, indicating the formation of ScxCr1-xN. Surface morphology of the films were investigated by SEM. The (111)-oriented ScxCr1-xN thin films with decent surface smoothness grown by DC magnetron sputtering at 600 °C in pure nitrogen with bias were developed.

Made available in DSpace on 2014-12-17T14:07:10Z (GMT). No. of bitstreams: 1 IgorON_DISSERT.pdf: 2261728 bytes, checksum: ec2c0dd089b3f051427a0e42ea972424 (MD5) Previous issue date: 2011-12-09 / The technique of surface coating using magnetron sputtering is one of the most widely used in the surface engineering, for its versatility in obtaining different films as well as in the micro / nanometric thickness control. Among the various process parameters, those related to the active species of the plasma are of the most fundamental importance in the mechanism and kinetics of deposition. In order to identify the active species of the plasma, parameters such as gas flow, pressure and density of electric power were varied during titanium coating on glass substrate. By flowing argon gas of 10, 20, 30, 40 and 50 sccm (cubic centimeters per minute) for each gas flow a sequential scan of the electric current of 0.10, 0.20, 0.30, 0.40 , 0.50 A. The maximum value of 0.50 A was chosen based both on literature data and on limitations of the equipment. The monitoring of plasma species present during the deposition was carried out in situ by the technique of optical emission spectroscopy (OES) through the spectrometer Ocean Optics USB2000 Series. For this purpose, an apparatus was developed to adapt the OES inside the plasma reactor to stay positioned closest to the target. The radiations emitted by the species were detected by an optical fiber placed behind the glass substrate and their intensities as a function of wavelength were, displayed on a monitor screen. The acquisition time for each condition of the plain parameters was related to the minima of spectral lines intensities due to the film formed on the substrate. The intensities of different emission lines of argon and titanium were then analyzed as a function of time, to determine the active species and estimate the thickness of the deposited films. After the deposition, the coated glasses thin films were characterized by optical transmittance through an infrared laser. It was found that the thickness and deposition rate determined by in situ analysis were consistent with the results obtained by laser transmittance / t?cnica de revestimento superficial utilizando magnetron sputtering ? uma das mais utilizadas pela engenharia de superf?cie, pela sua versatilidade na obten??o de diferentes filmes bem como no controle micro/nanom?trico de sua espessura. Dentre os v?rios par?metros do processo, aqueles relacionados com as esp?cies ativas do plasma s?o de fundamental import?ncia no mecanismo e cin?tica da deposi??o. Com o objetivo de identificar as esp?cies ativas do plasma, par?metros como fluxo de g?s, press?o de trabalho e densidade de pot?ncia el?trica foram variados durante o revestimento de tit?nio em substrato de vidro. Foi utilizado arg?nio com fluxos de 10; 20; 30; 40 e 50 sccm (cent?metro c?bico por minuto) e para cada fluxo de g?s uma varredura sequencial da corrente el?trica de 0,10; 0,20; 0,30; 0,40; 0,50A (amp?res). O valor de m?ximo de 0,50A foi escolhido com base em dados da literatura e limita??es do equipamento. O monitoramento das esp?cies do plasma presentes durante a deposi??o foi realizado "in situ", pela t?cnica de espectroscopia de emiss?o ?ptica (EEO) atrav?s do espectr?metro USB2000 Series da Ocean Optics. Para isso um aparato foi desenvolvido para adaptar o EEO dentro do reator de plasma de maneira que ficasse posicionado o mais pr?ximo poss?vel do alvo. As radia??es emitidas pelas esp?cies foram detectadas atrav?s de uma fibra ?ptica colocada por tr?s do substrato de vidro e suas intensidades, em fun??o do comprimento de onda, foram exibidas na tela de um monitor. O tempo de aquisi??o para cada condi??o de par?metro do plasma foi aquele em que a intensidade espectral deca?a para zero, devido ao filme formado no substrato. As intensidades de diferentes linhas de emiss?o de arg?nio e de tit?nio foram ent?o analisadas em fun??o do tempo, para determinar as esp?cies ativas e estimar a espessura dos filmes depositados. Ap?s a deposi??o, os filmes finos que revestiram os vidros foram caracterizados por transmit?ncia optica, atrav?s de um laser no infravermelho. Verificou-se que os valores da espessura e da taxa de deposi??o s?o determinada pela an?lise "in situ", foram coerentes com os resultados obtidos atraves da transmit?ncia por laser

Submitted by Ziani DE SOUZA SCHIABER (zianisouza@yahoo.com.br) on 2016-05-02T20:43:07Z No. of bitstreams: 1 Tese_Final_Ziani_Schiaber.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5) / Approved for entry into archive by Felipe Augusto Arakaki (arakaki@reitoria.unesp.br) on 2016-05-04T19:24:06Z (GMT) No. of bitstreams: 1 schiaber_zs_dr_bauru.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5) / Made available in DSpace on 2016-05-04T19:24:06Z (GMT). No. of bitstreams: 1 schiaber_zs_dr_bauru.pdf: 4224142 bytes, checksum: 63114f480403729da0d811c82872c3cc (MD5) Previous issue date: 2016-04-19 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Nanosestruturas de GaN destacam-se devido à baixa densidade de defeitos e consequentemente alta qualidade estrutural e óptica quando comparadas ao material em forma de filme. O entendimento dos mecanismos de formação de nanofios e nanocolunas de GaN por diferentes técnicas é fundamental do ponto de vista da ciência básica e também para o aprimoramento da fabricação de dispositivos eletrônicos e optoeletrônicos baseados nesse material. Neste trabalho discorre-se sobre a preparação e caracterização de nanofios e nanoestruturas de GaN pelas técnicas de epitaxia por magnetron sputtering e epitaxia por feixe molecular em diferentes tipos de substratos. Pela técnica de epitaxia por magnetron sputtering foram obtidos nanocristais e nanocolunas de GaN, além de uma região com camada compacta. Visando criar uma atmosfera propícia para o crescimento de nanoestruturas de GaN não coalescida, atmosfera de N2 puro e um anteparo, situado entre o alvo e o porta-substratos, foram utilizados. O anteparo causou diferença no fluxo incidente de gálio no substrato, ocasionando a formação de diferentes tipos de estruturas. A caracterização das amostras se deu principalmente através de medidas de microscopia eletrônica de varredura, difração de raios X e espectroscopia de fotoluminescência. As nanocolunas, de 220 nm de altura, foram formadas na região distante 2 mm do centro da sombra geométrica do orifício do anteparo e apresentaram orientação [001] perpendicular ao substrato, comumente encontrada em nanofios de GaN depositados por MBE. Em relação aos nanofios obtidos pela técnica de MBE, investigou-se a possibilidade de controlar a densidade de nanofios através de uma camada de Si sobre o GaN–Ga polar visando inibir a coalescência. Diferentes quantidades de Si foram depositadas e a densidade dos nanofios foi diferenciada significativamente. Os nanofios apresentaram densidade média de 108 nanofios/cm2 com 0,60 nm de espessura da camada de Si. Espessuras menores não resultaram no crescimento de nanofios, porém espessuras superiores causaram uma alta densidade de nanofios de 1010 nanofios/cm2 que permaneceu constante, independentemente do tempo de deposição. Medidas de polo por difração de raios X evidenciaram que os nanofios nuclearam-se orientados e em uma camada cristalina de Si ou SixNy. Experimentos de ataque químico com KOH indicaram a polaridade N para o nanofio e as medidas de difração por feixe convergente confirmaram a polaridade de N para o nanofio e Ga para a buffer layer. Os resultados obtidos neste trabalho permitiram um melhor entendimento da nucleação e dos mecanismos de formação de nanoestruturas de GaN, viabilizando maior controle das características dessas nanoestruturas produzidas. / GaN nanowires and nanocolumns stand out due to the low defect density and high structural and optical quality compared to the corresponding thin films. The understanding of the formation mechanism of the different GaN structures using different techniques is critical to improving the manufacture of the electronic and optoelectronic devices based on this material. This thesis focuses on the preparation and characterization of GaN nanowires and nanostructures. The molecular bem epitaxy (MBE) and magnetron sputtering epitaxy (MSE) were used and different substrates were tested. Concerning GaN nanocrystals and nanocolumns obtained by MSE, optimization of the deposition conditions was necessary in order to produce non-coalesced GaN nanostructures. The best conditions were: pure N2 atmosphere, silicon substrate, and a perforated screen placed between the target and the substrate holder. The later produced differences on the Ga flow to the substrate, inducing the formation of different structures, depending on the position of growth spot. Samples were characterized using scanning electron microscopy, X-ray diffraction and photoluminescence spectroscopy. Nanocolumns were observed, mainly in sites corresponding to a disc of radius 2 mm from the geometric centre of the hole. The columns were oriented with the GaN [001] axis perpendicular to the Si (111) substrate surface, situation which is commonly found in GaN nanowires deposited by MBE. Regarding the nanowires prepared by MBE technique, in order to inhibit coalescence and to investigate the possibility of controlling the numerical density of nanowires, we have used Si cap layers on top of the Ga-polar GaN buffer layer. Different amounts of Si have been deposited, and the density of the nanowires was significantly modified. With Si layer thickness of 0.60 nm, the nanowires had an average density of 108 nanowires/cm2 . Lower thickness did not result in the growth of nanowires, but higher thickness caused a high density of nanowires of 1010 nanowires/cm2 which remained constant regardless of the deposition time. X-ray diffraction pole figures showed that the different nanowires grown up in oriented fashion in a crystalline layer of Si or SixNy. Etching with KOH indicated N polarity for the grown nanowires, in spite of the fact that they were grown using Ga polar GaN buffer layers. Measurements by convergent beam electron diffraction confirmed the N polarity to the nanowire and Ga polarity for the buffer layer. Aspects obtained in this study allowed a better understanding of nucleation and nanostructures formation mechanisms of GaN, enabling greater control of the characteristics of these nanostructures produced. / FAPESP: 2011/22664-2 / FAPESP: 2013/25625-3

Nesse trabalho foram fabricados filmes finos de TiO2 por RF magnetron sputtering reativo sobre substrato de silício (1 0 0). A pressão parcial do oxigênio na câmara foi variada de 5 a 100% em relação ao argônio. Após a deposição os filmes foram submetidos a tratamento térmico em atmosfera de oxigênio. A estequiometria dos filmes e o perfil de profundidade foram obtidos por RBS. A estrutura cristalina foi obtida por XRD. As propriedades ópticas foram obtidas por interferometria e reflectância e as elétricas por meio das curvas C-V. Os valores de espessura dos filmes sem tratamento térmico aumentaram aproximadamente 41% com o aumento do oxigênio na câmara de deposição. Essa variação está ligada ao aumento da eficiência do sputtering do alvo. Os índices de refração dos filmes sem tratamento térmico se mantiveram dentro de um intervalo de aproximadamente 2,3 a 2,4. A diminuição do band gap com o tratamento térmico é consequência da mudança de fase cristalográfica de anatase para rutila. A estequiometria TiOx dos filmes antes do tratamento térmico apresentaram valores de x entre 2,0 e 2,4. A espessura em TFU dos filmes aumentou com o percentual de oxigênio na câmara. As amostras que receberam tratamento térmico apresentaram difusão de titânio na interface do substrato e incorporação de oxigênio no filme. Os valores da constante dielétrica aumentaram com o percentual de oxigênio na câmara, em contraposição com o efeito do tratamento térmico que diminuiu o valor. Todos os resultados observados são coerentes do ponto de vista da mudança de fase anatase rutila e aumento do percentual de oxigênio na câmara. / In this work thin films of TiO2 were produced by reactive RF magnetron sputtering on silicon substrate (1 0 0). The oxygen partial pressure in the chamber was varied from 5 to 100% in relation to argon. After deposition the films were submitted to thermal treatment under an oxygen atmosphere. The stoichiometry of the films and the depth profile were obtained by RBS. The crystal structure was obtained by XRD. Its optical properties were obtained by interferometry and reflectance and the electrical were obtained by means of the C-V curves. The thickness values of films without heat treatment increased approximately 41% with the increase of oxygen in the deposition chamber. This variation is linked to the increased sputtering efficiency of the target. The refractive indexes of films without heat treatment remained within a range of about 2.3 to 2.4. The decrease of the band gap with the heat treatment is a consequence of the change of crystallographic phase from anatase to rutile. The TiOx stoichiometry of the films before the heat treatment showed values of x between 2.0 and 2.4. The TFU thickness of the films increased with the percentage of oxygen in the chamber. The samples that received heat treatment shows diffusion of titanium at the interface of the substrate and incorporation of oxygen in the film. The values of the dielectric constant increased with the percentage of oxygen in the chamber, as opposed to the effect of the thermal treatment that decreased the value. All the results observed are consistent from the point of view of the anatase - rutile phase transition and the increase in the oxygen percentage in the chamber.